| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 02/26/2004 | US20040036363 Voltage control circuit for high voltage supply |
| 02/26/2004 | US20040036145 Method of making bipolar transistor with integrated base contact and field plate |
| 02/26/2004 | US20040036144 Semiconductor diffused resistors with optimized temperature dependence |
| 02/26/2004 | US20040036142 Electrical and electronic apparatus comprises substrates having silicide layers and isolation grooves on the surfaces; high speed transistors |
| 02/26/2004 | US20040036140 Semiconductor device and method of manufacturing same |
| 02/26/2004 | US20040036138 High voltage power MOSFET having low on-resistance |
| 02/26/2004 | US20040036132 Micro-electro-mechanical system (MEMS) variable capacitor apparatuses and related methods |
| 02/26/2004 | US20040036131 Electrostatic discharge protection devices having transistors with textured surfaces |
| 02/26/2004 | US20040036130 Methods of forming quantum dots of group iv semiconductor materials |
| 02/26/2004 | US20040036129 Atomic layer deposition of CMOS gates with variable work functions |
| 02/26/2004 | US20040036128 Multi-gate carbon nano-tube transistors |
| 02/26/2004 | US20040036127 Tri-gate devices and methods of fabrication |
| 02/26/2004 | US20040036126 Tri-gate devices and methods of fabrication |
| 02/26/2004 | US20040036123 Thin dielectric layers and non-thermal formation thereof |
| 02/26/2004 | US20040036122 Semiconductor device |
| 02/26/2004 | US20040036121 Semiconductor device and a method of producing the same |
| 02/26/2004 | US20040036119 Cross diffusion barrier layer in polysilicon |
| 02/26/2004 | US20040036118 Concurrent Fin-FET and thick-body device fabrication |
| 02/26/2004 | US20040036117 Semiconductor constructions |
| 02/26/2004 | US20040036116 Semiconductor constructions |
| 02/26/2004 | US20040036115 High-voltage transistor with buried conduction layer |
| 02/26/2004 | US20040036114 Buried transistors for silicon on insulator technology |
| 02/26/2004 | US20040036113 Silicon carbide n channel MOS semiconductor device and method for manufacturing the same |
| 02/26/2004 | US20040036112 Method to improve the coupling ratio of top gate to floating gate in flash |
| 02/26/2004 | US20040036111 Semiconductor device and a fabrication method thereof |
| 02/26/2004 | US20040036110 Semiconductor memory device and method for fabricating the same |
| 02/26/2004 | US20040036108 High coupling floating gate transistor |
| 02/26/2004 | US20040036107 Semiconductor device and method of manufacturing the same |
| 02/26/2004 | US20040036106 High coupling floating gate transistor |
| 02/26/2004 | US20040036104 Semiconductor memory device |
| 02/26/2004 | US20040036101 Vertical transistor dram structure and its manufacturing methods |
| 02/26/2004 | US20040036100 Structure and method of fabricating embedded dram having a vertical device array and a bordered bitline contact |
| 02/26/2004 | US20040036099 Dual-sided capacitor and method of formation |
| 02/26/2004 | US20040036097 Dual-sided capacitor and method of formation |
| 02/26/2004 | US20040036095 DRAM cell with enhanced SER immunity |
| 02/26/2004 | US20040036094 Semiconductor device and an electonic device |
| 02/26/2004 | US20040036093 Semiconductor diode device |
| 02/26/2004 | US20040036092 Tft matrix for optical sensor comprising a photosensitive semiconductor layer, and optical sensor comprising such an active matrix |
| 02/26/2004 | US20040036086 Metal oxide semiconductor heterostructure field effect transistor |
| 02/26/2004 | US20040036082 Heterojunction bipolar transistor(HBT) having improved emitter-base grading structure |
| 02/26/2004 | US20040036073 Thin film transistor array panel |
| 02/26/2004 | US20040036072 Thin film transistor, image display device, and image display apparatus |
| 02/26/2004 | US20040036071 Semiconductor device and method of fabricating the same |
| 02/26/2004 | US20040036069 Glass attachment over micro-lens arrays |
| 02/26/2004 | US20040036010 Photoconductor on active pixel image sensor |
| 02/26/2004 | US20040035214 Converter and method of manufacturing the same |
| 02/26/2004 | DE4192215B4 Halbleiterbauelement mit Temperaturerfassungsschaltung A semiconductor device comprising temperature detecting circuit |
| 02/26/2004 | DE10336232A1 Kapazitiver Sensor für dynamische Größen Capacitive sensor for dynamic variables |
| 02/26/2004 | DE10334819A1 Silicon carbide semiconductor device used in electronics comprises a silicon carbide substrate having an error-aligned surface with a specified outer axial direction |
| 02/26/2004 | DE10333819A1 Gateansteuerungsschaltung in Leistungsmodulen Gate drive circuit in power modules |
| 02/26/2004 | DE10331560A1 Halbleitervorrichtung mit einem Verbundbereich und ein Verfahren zur Herstellung derselben A semiconductor device comprising a composite region and a method of manufacturing the same |
| 02/26/2004 | DE10321470A1 Schutz vor elektrischer Entladung eines Dünnfilmresonators Protecting against electrostatic discharge a thin film resonator |
| 02/26/2004 | DE10314516A1 Halbleiter-Bauelement Semiconductor component |
| 02/26/2004 | DE10235072A1 EEPROM structure, has an additional gate or substrate capacitor on each cell |
| 02/26/2004 | DE10234931A1 Production of a gate electrode of a MOST comprises determining the height of a metal silicide layer formed in a crystalline layer, selecting a design height for the metal silicide layer, and further processing |
| 02/26/2004 | DE10234488A1 Stark dotierte Elektrode für einen Feldeffekttransistor und ein Verfahren zur Herstellung derselben Heavily doped electrode for a field effect transistor and a method of manufacturing the same |
| 02/25/2004 | EP1391939A1 Method for manufacturing channel gate type field effect transistor |
| 02/25/2004 | EP1391938A2 Heterojunction bipolar transistor (hbt) having improved emitter-base grading structure |
| 02/25/2004 | EP1391937A2 Method for improving a semiconductor substrate having SiGe film and semiconductor device manufactured by using this method |
| 02/25/2004 | EP1391930A1 A method of forming a sharp tip on a floating gate in an asymmetrical non-volatile memory device using small in-situ doped polysilicon spacers |
| 02/25/2004 | EP1391929A2 Semiconductor device and manufacturing method for the same |
| 02/25/2004 | EP1391925A2 Method of self-aligning a damascene gate structure to isolation regions |
| 02/25/2004 | EP1391906A2 Electrostatic RF mems switches |
| 02/25/2004 | EP1391710A2 Force measuring device, pressure measuring device and pressure sensor |
| 02/25/2004 | EP1391429A1 Bismuth titanium silicon oxide, bismuth titanium silicon oxide thin film, and method for forming the thin film |
| 02/25/2004 | EP1390991A1 Active devices using threads |
| 02/25/2004 | EP1390990A2 Group iii nitride based light emitting diode structures with a quantum well and superlattice |
| 02/25/2004 | EP1390986A2 Integrated tunable capacitor |
| 02/25/2004 | EP1390985A2 Integrated tunable capacitor |
| 02/25/2004 | EP1390984A1 Floating gate memory device using composite molecular material |
| 02/25/2004 | EP1390983A1 Group-iii nitride based high electron mobility transistor (hemt) with barrier/spacer layer |
| 02/25/2004 | EP1390982A1 Semiconductor structure and method for improving its ability to withstand electrostatic discharge (esd) and overloads |
| 02/25/2004 | EP1390980A2 Semiconductor structure comprising an electrostatic discharge (esd) protection device |
| 02/25/2004 | EP1390973A1 A method concerning a junction barrier schottky diode, such a diode and use thereof |
| 02/25/2004 | EP1390765A1 Method for manufacturing a silicon sensor and a silicon sensor |
| 02/25/2004 | EP1390540A1 Chemically assembled nano-scale circuit elements |
| 02/25/2004 | EP1390295A2 Nanotube array and method for producing a nanotube array |
| 02/25/2004 | EP0865670B1 Semiconductor device with special emitter connection |
| 02/25/2004 | EP0847598B1 SiC SEMICONDUCTOR DEVICE COMPRISING A PN JUNCTION WITH A VOLTAGE ABSORBING EDGE |
| 02/25/2004 | EP0840942B1 GaAs SUBSTRATE WITH COMPOSITIONALLY GRADED AlGaAsSb BUFFER FOR FABRICATION OF HIGH-INDIUM FETS |
| 02/25/2004 | CN1478309A Field effect transistors and materials and methods for their manufacture |
| 02/25/2004 | CN1478303A Self-aligned non-volatile memory cell |
| 02/25/2004 | CN1478302A Silicon carbide power MOSFETS having shorting channel and methods of fabrication them |
| 02/25/2004 | CN1478301A Substrate with semiconductor layer, electronic component, electronic circuit, printable composition and method for production thereof |
| 02/25/2004 | CN1478298A Method of simultaneous formation of charge storage and bitline to wordline isolation layer |
| 02/25/2004 | CN1478297A CMOS fabrication process utilizing special transistor orientation |
| 02/25/2004 | CN1478296A Substrate treating device and method, substrate flatting method |
| 02/25/2004 | CN1477913A Double-panel organic electroluminescent display device and its mfg. method |
| 02/25/2004 | CN1477912A Double-panel organic electroluminescent display device |
| 02/25/2004 | CN1477910A Active matrix organic luminous diode device and its thin film transistor |
| 02/25/2004 | CN1477862A Solid-state image sensor |
| 02/25/2004 | CN1477771A Grid drive circuit of power assembly |
| 02/25/2004 | CN1477719A Electricity induction soure-drain extended zone MOS transistor and its making method |
| 02/25/2004 | CN1477718A 半导体器件 Semiconductor devices |
| 02/25/2004 | CN1477717A Enhanced T-shaped grid for modulating doped field-effect transistor and its making method |
| 02/25/2004 | CN1477716A 场电极金属半导体场效应晶体管 Field electrode metal semiconductor field effect transistor |
| 02/25/2004 | CN1477709A Semiconductor memory device and method for making said device by adopting mosaic bit line process |
| 02/25/2004 | CN1477701A Method for making non-volatile semiconductor memory and non-volatile semiconductor memory |
| 02/25/2004 | CN1477677A Crystallizer, crystalline method, film transitior and display device |
| 02/25/2004 | CN1477676A Method for making display equipment |