Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
04/2004
04/01/2004DE10327928A1 Halbleiterbauelement mit reduzierter Gateüberlappungskapazitanz und Verfahren zur Herstellung des Halbleiterbauelements A semiconductor device with reduced Gateüberlappungskapazitanz and method of manufacturing the semiconductor device
04/01/2004DE10255846A1 Production of a trench capacitor for a semiconductor memory cell comprises providing a trench in a substrate, providing a capacitor dielectric and an electrically conducting filling in trench regions, and further processing
04/01/2004DE10244446A1 Halbleiterchip oder Halbleiterchipstapel Semiconductor chip or semiconductor chip stack
04/01/2004DE10243813A1 Halbleiteranordnung und Verfahren zu ihrer Herstellung A semiconductor device and process for their preparation
04/01/2004DE10243758A1 Verfahren zur Herstellung einer vergrabenen Stoppzone in einem Halbleiterbauelement und Halbleiterbauelement mit einer vergrabenen Stoppzone A process for producing a buried stop zone in a semiconductor device and semiconductor device having a buried stop zone
04/01/2004DE10243746A1 Controlled blocking current generation device for power semiconductor switch e.g. MOSFET switch or IGBT switch, using depletion-p-channel MOSFET as blocking current source
04/01/2004DE10243743A1 Quasi-vertical semiconductor component e.g. diode, vertical DMOS-transistor, bipolar transistor or thyristor, with inner cells having same operating point formed in trough above buried layer
04/01/2004DE10241396A1 Halbleiterelement mit T-förmiger Gate-Struktur und ein Verfahren zur Herstellung des Halbleiterelements Semiconductor element having a T-shaped gate structure and a method for manufacturing the semiconductor element
04/01/2004DE10234952B3 Production of a semiconductor structure used as a trench capacitor comprises preparing a semiconductor substrate, and forming a trench in the substrate
04/01/2004CA2499208A1 Controlling electromechanical behavior of structures within a microelectromechanical systems device
03/2004
03/31/2004EP1403932A1 Nitride semiconductor device
03/31/2004EP1403930A2 Semiconductor device and method of manufacturing the same
03/31/2004EP1403929A1 Semiconductor layer and forming method therefor, and semiconductor device and production method therefor
03/31/2004EP1403928A2 Nanometer-scale semiconductor devices and method of making
03/31/2004EP1403915A2 Method for fabricating a MOS transistor
03/31/2004EP1403914A2 Method of making a semiconductor device having trenches
03/31/2004EP1403913A1 Substrate treating device and substrate treating method, substrate flattening method
03/31/2004EP1403911A2 Thin film device and its fabrication method
03/31/2004EP1403910A2 Semiconductor device having a nitride-based hetero-structure and method of manufacturing the same
03/31/2004EP1403691A1 Electro-optical display device and its manufacturing method including the transfer of a chip
03/31/2004EP1403629A2 Apparatus for detecting an amount of strain and method for manufacturing same
03/31/2004EP1402721A1 Photosensor system and drive control method thereof
03/31/2004EP1402580A1 Symmetric trench mosfet device and method of making same
03/31/2004EP1402577A2 Integration of two memory types
03/31/2004EP1402573A1 Method and structure for buried circuits and devices
03/31/2004EP1401916A1 Electroluminescent polymers and use thereof in light-emitting devices
03/31/2004EP1208521A4 Unitary package identification and dimensioning system employing ladar-based scanning methods
03/31/2004EP1097481B1 Power semiconductor component for high blocking voltages
03/31/2004CN1486277A Surface-micromachined absolute pressure sensor and a method for manufacturing thereof
03/31/2004CN1485927A Semiconductor substrate and method of manufacturing the same, and semiconductor device,and method of manufacturing the same
03/31/2004CN1485926A Sram formed on soi substrate
03/31/2004CN1485924A Integrated metal-insulator-metal capacitor and metal gate transistor
03/31/2004CN1485910A Semiconductor devices
03/31/2004CN1485909A Method to improve performance of microelectronic circuits
03/31/2004CN1485891A Semiconductor memory device and method for manufacturing semiconductor device
03/31/2004CN1485873A Electrostatic rf mems switches
03/31/2004CN1485667A Photographic and video image system
03/31/2004CN1144294C Semiconductor memory device
03/31/2004CN1144292C Semiconductor device
03/31/2004CN1144275C Method for manufacturing thin film transistor and thin film transistor
03/31/2004CN1144273C Semiconductor device and method for making the same
03/31/2004CN1144262C Liquid crystal display on silicon-on-sapphire and method for manufacturing the same
03/31/2004CN1144088C Semiconducter device with conductive layer and liquid crystal display device
03/30/2004US6714954 Methods of factoring and modular arithmetic
03/30/2004US6714454 Method of operation of a dual-bit double-polysilicon source-side injection flash EEPROM cell
03/30/2004US6714451 Semiconductor memory device including bit select circuit
03/30/2004US6714447 Semiconductor device and a integrated circuit card
03/30/2004US6714439 Semiconductor memory device
03/30/2004US6714435 Ferroelectric transistor for storing two data bits
03/30/2004US6714397 Protection configuration for schottky diode
03/30/2004US6714274 Liquid crystal display apparatus and TFT panel
03/30/2004US6714266 Transmission type liquid crystal display device
03/30/2004US6714027 Method and apparatus for calculating the electrical characteristics of materials of thin film transistors
03/30/2004US6713937 Minitab rectifier for alternators
03/30/2004US6713846 Multilayer high κ dielectric films
03/30/2004US6713834 Semiconductor device having two-layered charge storage electrode
03/30/2004US6713826 Method for fabricating a semiconductor device having contacts self-aligned with a gate electrode thereof
03/30/2004US6713825 Poly-crystalline thin film transistor and fabrication method thereof
03/30/2004US6713824 Reliable semiconductor device and method of manufacturing the same
03/30/2004US6713820 Semiconductor device
03/30/2004US6713819 SOI MOSFET having amorphized source drain and method of fabrication
03/30/2004US6713818 Electrostatic discharge protection device
03/30/2004US6713814 DMOS transistor structure with gate electrode trench for high density integration and method of fabricating the structure
03/30/2004US6713813 Field effect transistor having a lateral depletion structure
03/30/2004US6713812 Non-volatile memory device having an anti-punch through (APT) region
03/30/2004US6713811 Split gate flash with strong source side injection and method of fabrication thereof
03/30/2004US6713810 Non-volatile devices, and electronic systems comprising non-volatile devices
03/30/2004US6713809 Dual bit memory device with isolated polysilicon floating gates
03/30/2004US6713804 TFT with a negative substrate bias that decreases in time
03/30/2004US6713794 Lateral semiconductor device
03/30/2004US6713793 Field effect transistor structure with bent gate
03/30/2004US6713791 T-RAM array having a planar cell structure and method for fabricating the same
03/30/2004US6713790 Semiconductor device and method for fabricating the same
03/30/2004US6713786 Thin film transistors with self-aligned transparent pixel electrode
03/30/2004US6713785 Thin film transistor and display device having the same
03/30/2004US6713779 Semiconductor device and method of manufacturing the same
03/30/2004US6713748 Image detection device
03/30/2004US6713403 Method for manufacturing semiconductor device
03/30/2004US6713397 Manufacturing method of semiconductor device
03/30/2004US6713393 Method of forming a nanometer-gate MOSFET device
03/30/2004US6713389 Method of forming an electronic device
03/30/2004US6713378 Interconnect line selectively isolated from an underlying contact plug
03/30/2004US6713371 Large grain size polysilicon films formed by nuclei-induced solid phase crystallization
03/30/2004US6713360 System for reducing segregation and diffusion of halo implants into highly doped regions
03/30/2004US6713359 Semiconductor device and method of manufacturing the same including raised source/drain comprising SiGe or SiC
03/30/2004US6713358 Method for making a semiconductor device having a high-k gate dielectric
03/30/2004US6713357 Method to reduce parasitic capacitance of MOS transistors
03/30/2004US6713356 Method for making a semiconductor device comprising a stack alternately consisting of silicon layers and dielectric material layers
03/30/2004US6713352 Method of forming a trench MOSFET with structure having increased cell density and low gate charge
03/30/2004US6713351 Double diffused field effect transistor having reduced on-resistance
03/30/2004US6713347 Process for integrating in a same chip a non-volatile memory and a high-performance logic circuitry
03/30/2004US6713338 Method for fabricating source/drain devices
03/30/2004US6713337 Method for manufacturing a semiconductor device having self-aligned contacts
03/30/2004US6713336 Flash memory device and method for fabricating the same
03/30/2004US6713335 Method of self-aligning a damascene gate structure to isolation regions
03/30/2004US6713333 Method for fabricating a MOSFET
03/30/2004US6713331 Semiconductor device manufacturing using one element separation film
03/30/2004US6713329 Inverter made of complementary p and n channel transistors using a single directly-deposited microcrystalline silicon film
03/30/2004US6713328 Manufacturing method of thin film transistor panel
03/30/2004US6713327 Stress controlled dielectric integrated circuit fabrication