Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
04/2004
04/06/2004US6717849 Flash memory device
04/06/2004US6717848 Sensing circuit in a multi-level flash memory cell
04/06/2004US6717847 Selective operation of a multi-state non-volatile memory system in a binary mode
04/06/2004US6717840 Nonvolatile ferroelectric memory device
04/06/2004US6717787 Current sensing IC with resistive sensing
04/06/2004US6717648 Defect correcting method for liquid crystal panel
04/06/2004US6717633 Apparatus for providing light shielding in a liquid crystal display
04/06/2004US6717631 Array substrate for use in LCD device
04/06/2004US6717271 Semiconductor device with mushroom electrode and manufacture method thereof
04/06/2004US6717265 Treatment of low-k dielectric material for CMP
04/06/2004US6717245 Chip scale packages performed by wafer level processing
04/06/2004US6717243 Semiconductor device and the manufacturing method thereof
04/06/2004US6717237 Integrated chip diode
04/06/2004US6717230 Lateral device with improved conductivity and blocking control
04/06/2004US6717229 Distributed reverse surge guard
04/06/2004US6717226 Hafnium oxide and zirconium oxide; noncontamination
04/06/2004US6717224 Flash memory cell and method for fabricating a flash
04/06/2004US6717219 High holding voltage ESD protection structure for BiCMOS technology
04/06/2004US6717218 Wiring structure formed in contact hole, manufacturing method therefor, and a display apparatus having the same
04/06/2004US6717216 SOI based field effect transistor having a compressive film in undercut area under the channel and a method of making the device
04/06/2004US6717214 SOI-LDMOS device with integral voltage sense electrodes
04/06/2004US6717212 Leaky, thermally conductive insulator material (LTCIM) in semiconductor-on-insulator (SOI) structure
04/06/2004US6717211 Shallow doped junctions with a variable profile gradation of dopants
04/06/2004US6717210 Trench gate type semiconductor device and fabricating method of the same
04/06/2004US6717207 Non-volatile semiconductor memory device of which bit line withstand voltage can be increased
04/06/2004US6717205 Vertical non-volatile semiconductor memory cell and method for manufacturing the memory cell
04/06/2004US6717204 Semiconductor devices having a non-volatile memory transistor
04/06/2004US6717203 Compact nonvolatile memory using substrate hot carrier injection
04/06/2004US6717200 Vertical field effect transistor with internal annular gate and method of production
04/06/2004US6717199 Mixed crystalline/amorphous perovskite thin films via ion implantation
04/06/2004US6717198 Miniturization while preventing hydrogen from invading capacitor dielectric film
04/06/2004US6717195 Ferroelectric memory
04/06/2004US6717192 Schottky gate field effect transistor
04/06/2004US6717188 Semiconductor device
04/06/2004US6717180 Semiconductor device and method for forming the same
04/06/2004US6717179 Semiconductor device and semiconductor display device
04/06/2004US6717178 Semiconductor devices fabricated using sputtered silicon targets
04/06/2004US6716760 Method for forming a gate of a high integration semiconductor device including forming an etching prevention or etch stop layer and anti-reflection layer
04/06/2004US6716752 Method of forming silicon oxide layer and method of manufacturing thin film transistor thereby
04/06/2004US6716751 Dopant precursors and processes
04/06/2004US6716731 Semiconductor device and method for reducing contact resistance between an electrode and a semiconductor substrate
04/06/2004US6716728 Radiation hardened silicon-on-insulator (SOI) transistor having a body contact
04/06/2004US6716726 Thin film semiconductor device containing polycrystalline Si—Ge alloy and method for producing thereof
04/06/2004US6716716 Even nucleation between silicon and oxide surfaces for thin silicon nitride film growth
04/06/2004US6716714 Semiconductor diode and method for producing the same
04/06/2004US6716713 Dopant precursors and ion implantation processes
04/06/2004US6716709 Transistors formed with grid or island implantation masks to form reduced diffusion-depth regions without additional masks and process steps
04/06/2004US6716707 Method for making a semiconductor device having a high-k gate dielectric
04/06/2004US6716706 Method and system for forming a long channel device
04/06/2004US6716703 Method of making semiconductor memory device having sources connected to source lines
04/06/2004US6716702 Method of forming flash memory having pre-interpoly dielectric treatment layer
04/06/2004US6716701 Method of manufacturing a semiconductor memory device
04/06/2004US6716700 Method of forming memory arrays based on a triple-polysilicon source-side injection non-volatile memory cell
04/06/2004US6716699 Method for manufacturing flash memory device
04/06/2004US6716695 Semiconductor with a nitrided silicon gate oxide and method
04/06/2004US6716694 Semiconductor devices and methods for manufacturing semiconductor devices
04/06/2004US6716690 Uniformly doped source/drain junction in a double-gate MOSFET
04/06/2004US6716689 MOS transistor having a T-shaped gate electrode and method for fabricating the same
04/06/2004US6716688 Irradiation of manufacturing a thin film transistor by laser irradiation
04/06/2004US6716687 FET having epitaxial silicon growth
04/06/2004US6716686 Method for forming channels in a finfet device
04/06/2004US6716684 Method of making a self-aligned triple gate silicon-on-insulator device
04/06/2004US6716681 Method for manufacturing thin film transistor panel
04/06/2004US6716677 Microwave monolithic integrated circuit package
04/06/2004US6716665 Method of mounting chip onto printed circuit board in shortened working time
04/06/2004US6716664 Functional device and method of manufacturing the same
04/06/2004US6716663 Method for removing foreign matter, method for forming film, semiconductor device and film forming apparatus
04/06/2004US6716660 Method for fabricating a wiring line assembly for a thin film transistor array panel substrate
04/06/2004US6716645 MFMOS capacitors with high dielectric constant materials
04/06/2004US6716644 Method for forming MRAM bit having a bottom sense layer utilizing electroless plating
04/06/2004US6716365 Method for wet etching and wet etching apparatus
04/06/2004US6716046 Damascene layer is patterned, the channel region is recessed by etch that is self-aligned to the patterned damascene layer, and the gate electrode is formed by depositing a material over the channel region and patterned damascene
04/06/2004US6715871 Method of forming film pattern, device for forming film pattern, conductive film wiring, electro-optical device, electronic device, and non-contact card medium
04/06/2004US6715348 Method and apparatus for detecting liquid level
04/01/2004WO2004027890A2 Organic thin film zener diodes
04/01/2004WO2004027878A2 Quasi-vertical power semiconductor device on a composite substrate
04/01/2004WO2004027877A1 Variable resistance functional body and its manufacturing method
04/01/2004WO2004027874A1 Photoelectric conversion apparatus and manufacturing method of same
04/01/2004WO2004027869A1 Semiconductor device
04/01/2004WO2004027864A1 Diode
04/01/2004WO2004027861A1 Semi-conductor component with condensators buried in the substrate and insulated component layer thereof
04/01/2004WO2004027860A1 Method of manufacturing a semiconductor device and a semiconductor device obtained by means of said method
04/01/2004WO2004027857A1 Method for processing semiconductor substrate
04/01/2004WO2004027852A1 Method for forming insulating film on substrate, method for manufacturing semiconductor device and substrate-processing apparatus
04/01/2004WO2004027848A1 Metal spacer gate for metal oxide semiconductor device
04/01/2004WO2004027844A2 Method for the production of a composite sicoi-type substrate comprising an epitaxy stage
04/01/2004WO2004027824A2 Nitride and polysilicon interface with titanium layer
04/01/2004WO2004027821A2 Ferroelectric transistor for storing two data bits
04/01/2004WO2004027820A2 Self-aligned npn transistor with raised extrinsic base
04/01/2004WO2004027740A1 Display device and manufacturing method thereof
04/01/2004WO2004027367A1 Soi component comprising margins for separation
04/01/2004WO2004027111A1 Electrode, solid element and device using the same
04/01/2004WO2004026757A2 Controlling electromechanical behavior of structures within a microelectromechanical systems device
04/01/2004WO2004021399A3 Dielectric storage memory cell (monos) having high permittivity top dielectric and method therefor
04/01/2004WO2004008495A3 Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses
04/01/2004WO2003100878A3 A low-forward-voltage molecular rectifier
04/01/2004WO2003098700A3 Resurf super-junction devices having trenches
04/01/2004WO2003095963A3 Barometric pressure sensor
04/01/2004WO2003092041B1 Method for fabricating a soi substrate a high resistivity support substrate
04/01/2004WO2003088328A3 Method for production of a capacitive structure above a metallisation level of an electronic component