Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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04/06/2004 | US6717849 Flash memory device |
04/06/2004 | US6717848 Sensing circuit in a multi-level flash memory cell |
04/06/2004 | US6717847 Selective operation of a multi-state non-volatile memory system in a binary mode |
04/06/2004 | US6717840 Nonvolatile ferroelectric memory device |
04/06/2004 | US6717787 Current sensing IC with resistive sensing |
04/06/2004 | US6717648 Defect correcting method for liquid crystal panel |
04/06/2004 | US6717633 Apparatus for providing light shielding in a liquid crystal display |
04/06/2004 | US6717631 Array substrate for use in LCD device |
04/06/2004 | US6717271 Semiconductor device with mushroom electrode and manufacture method thereof |
04/06/2004 | US6717265 Treatment of low-k dielectric material for CMP |
04/06/2004 | US6717245 Chip scale packages performed by wafer level processing |
04/06/2004 | US6717243 Semiconductor device and the manufacturing method thereof |
04/06/2004 | US6717237 Integrated chip diode |
04/06/2004 | US6717230 Lateral device with improved conductivity and blocking control |
04/06/2004 | US6717229 Distributed reverse surge guard |
04/06/2004 | US6717226 Hafnium oxide and zirconium oxide; noncontamination |
04/06/2004 | US6717224 Flash memory cell and method for fabricating a flash |
04/06/2004 | US6717219 High holding voltage ESD protection structure for BiCMOS technology |
04/06/2004 | US6717218 Wiring structure formed in contact hole, manufacturing method therefor, and a display apparatus having the same |
04/06/2004 | US6717216 SOI based field effect transistor having a compressive film in undercut area under the channel and a method of making the device |
04/06/2004 | US6717214 SOI-LDMOS device with integral voltage sense electrodes |
04/06/2004 | US6717212 Leaky, thermally conductive insulator material (LTCIM) in semiconductor-on-insulator (SOI) structure |
04/06/2004 | US6717211 Shallow doped junctions with a variable profile gradation of dopants |
04/06/2004 | US6717210 Trench gate type semiconductor device and fabricating method of the same |
04/06/2004 | US6717207 Non-volatile semiconductor memory device of which bit line withstand voltage can be increased |
04/06/2004 | US6717205 Vertical non-volatile semiconductor memory cell and method for manufacturing the memory cell |
04/06/2004 | US6717204 Semiconductor devices having a non-volatile memory transistor |
04/06/2004 | US6717203 Compact nonvolatile memory using substrate hot carrier injection |
04/06/2004 | US6717200 Vertical field effect transistor with internal annular gate and method of production |
04/06/2004 | US6717199 Mixed crystalline/amorphous perovskite thin films via ion implantation |
04/06/2004 | US6717198 Miniturization while preventing hydrogen from invading capacitor dielectric film |
04/06/2004 | US6717195 Ferroelectric memory |
04/06/2004 | US6717192 Schottky gate field effect transistor |
04/06/2004 | US6717188 Semiconductor device |
04/06/2004 | US6717180 Semiconductor device and method for forming the same |
04/06/2004 | US6717179 Semiconductor device and semiconductor display device |
04/06/2004 | US6717178 Semiconductor devices fabricated using sputtered silicon targets |
04/06/2004 | US6716760 Method for forming a gate of a high integration semiconductor device including forming an etching prevention or etch stop layer and anti-reflection layer |
04/06/2004 | US6716752 Method of forming silicon oxide layer and method of manufacturing thin film transistor thereby |
04/06/2004 | US6716751 Dopant precursors and processes |
04/06/2004 | US6716731 Semiconductor device and method for reducing contact resistance between an electrode and a semiconductor substrate |
04/06/2004 | US6716728 Radiation hardened silicon-on-insulator (SOI) transistor having a body contact |
04/06/2004 | US6716726 Thin film semiconductor device containing polycrystalline Si—Ge alloy and method for producing thereof |
04/06/2004 | US6716716 Even nucleation between silicon and oxide surfaces for thin silicon nitride film growth |
04/06/2004 | US6716714 Semiconductor diode and method for producing the same |
04/06/2004 | US6716713 Dopant precursors and ion implantation processes |
04/06/2004 | US6716709 Transistors formed with grid or island implantation masks to form reduced diffusion-depth regions without additional masks and process steps |
04/06/2004 | US6716707 Method for making a semiconductor device having a high-k gate dielectric |
04/06/2004 | US6716706 Method and system for forming a long channel device |
04/06/2004 | US6716703 Method of making semiconductor memory device having sources connected to source lines |
04/06/2004 | US6716702 Method of forming flash memory having pre-interpoly dielectric treatment layer |
04/06/2004 | US6716701 Method of manufacturing a semiconductor memory device |
04/06/2004 | US6716700 Method of forming memory arrays based on a triple-polysilicon source-side injection non-volatile memory cell |
04/06/2004 | US6716699 Method for manufacturing flash memory device |
04/06/2004 | US6716695 Semiconductor with a nitrided silicon gate oxide and method |
04/06/2004 | US6716694 Semiconductor devices and methods for manufacturing semiconductor devices |
04/06/2004 | US6716690 Uniformly doped source/drain junction in a double-gate MOSFET |
04/06/2004 | US6716689 MOS transistor having a T-shaped gate electrode and method for fabricating the same |
04/06/2004 | US6716688 Irradiation of manufacturing a thin film transistor by laser irradiation |
04/06/2004 | US6716687 FET having epitaxial silicon growth |
04/06/2004 | US6716686 Method for forming channels in a finfet device |
04/06/2004 | US6716684 Method of making a self-aligned triple gate silicon-on-insulator device |
04/06/2004 | US6716681 Method for manufacturing thin film transistor panel |
04/06/2004 | US6716677 Microwave monolithic integrated circuit package |
04/06/2004 | US6716665 Method of mounting chip onto printed circuit board in shortened working time |
04/06/2004 | US6716664 Functional device and method of manufacturing the same |
04/06/2004 | US6716663 Method for removing foreign matter, method for forming film, semiconductor device and film forming apparatus |
04/06/2004 | US6716660 Method for fabricating a wiring line assembly for a thin film transistor array panel substrate |
04/06/2004 | US6716645 MFMOS capacitors with high dielectric constant materials |
04/06/2004 | US6716644 Method for forming MRAM bit having a bottom sense layer utilizing electroless plating |
04/06/2004 | US6716365 Method for wet etching and wet etching apparatus |
04/06/2004 | US6716046 Damascene layer is patterned, the channel region is recessed by etch that is self-aligned to the patterned damascene layer, and the gate electrode is formed by depositing a material over the channel region and patterned damascene |
04/06/2004 | US6715871 Method of forming film pattern, device for forming film pattern, conductive film wiring, electro-optical device, electronic device, and non-contact card medium |
04/06/2004 | US6715348 Method and apparatus for detecting liquid level |
04/01/2004 | WO2004027890A2 Organic thin film zener diodes |
04/01/2004 | WO2004027878A2 Quasi-vertical power semiconductor device on a composite substrate |
04/01/2004 | WO2004027877A1 Variable resistance functional body and its manufacturing method |
04/01/2004 | WO2004027874A1 Photoelectric conversion apparatus and manufacturing method of same |
04/01/2004 | WO2004027869A1 Semiconductor device |
04/01/2004 | WO2004027864A1 Diode |
04/01/2004 | WO2004027861A1 Semi-conductor component with condensators buried in the substrate and insulated component layer thereof |
04/01/2004 | WO2004027860A1 Method of manufacturing a semiconductor device and a semiconductor device obtained by means of said method |
04/01/2004 | WO2004027857A1 Method for processing semiconductor substrate |
04/01/2004 | WO2004027852A1 Method for forming insulating film on substrate, method for manufacturing semiconductor device and substrate-processing apparatus |
04/01/2004 | WO2004027848A1 Metal spacer gate for metal oxide semiconductor device |
04/01/2004 | WO2004027844A2 Method for the production of a composite sicoi-type substrate comprising an epitaxy stage |
04/01/2004 | WO2004027824A2 Nitride and polysilicon interface with titanium layer |
04/01/2004 | WO2004027821A2 Ferroelectric transistor for storing two data bits |
04/01/2004 | WO2004027820A2 Self-aligned npn transistor with raised extrinsic base |
04/01/2004 | WO2004027740A1 Display device and manufacturing method thereof |
04/01/2004 | WO2004027367A1 Soi component comprising margins for separation |
04/01/2004 | WO2004027111A1 Electrode, solid element and device using the same |
04/01/2004 | WO2004026757A2 Controlling electromechanical behavior of structures within a microelectromechanical systems device |
04/01/2004 | WO2004021399A3 Dielectric storage memory cell (monos) having high permittivity top dielectric and method therefor |
04/01/2004 | WO2004008495A3 Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses |
04/01/2004 | WO2003100878A3 A low-forward-voltage molecular rectifier |
04/01/2004 | WO2003098700A3 Resurf super-junction devices having trenches |
04/01/2004 | WO2003095963A3 Barometric pressure sensor |
04/01/2004 | WO2003092041B1 Method for fabricating a soi substrate a high resistivity support substrate |
04/01/2004 | WO2003088328A3 Method for production of a capacitive structure above a metallisation level of an electronic component |