Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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03/10/2004 | EP1395835A1 Accelerometer strain relief structure |
03/10/2004 | CN2606374Y Semiconductor device, photoelectric device and electronic device |
03/10/2004 | CN1481586A Pulse-controlled bistable birectional electronic switch |
03/10/2004 | CN1481579A Method for producing microelectronic component and component produced according to said method |
03/10/2004 | CN1481558A Method for reading out or in status from or to ferroelectrical transistor of memory cell and memory matrix |
03/10/2004 | CN1481199A Organic El-Panel |
03/10/2004 | CN1481146A Multiresolution CCD sensing device |
03/10/2004 | CN1481031A Grid structure and manufacture method as well as MOS part of grid structure |
03/10/2004 | CN1481030A 碳化硅半导体器件 Silicon carbide semiconductor device |
03/10/2004 | CN1481028A Semiconductor memory and mfg. method for its used inlayed grid and epitaxial growth |
03/10/2004 | CN1480983A Mfg. method of semiconductor device and semiconductor device |
03/10/2004 | CN1480914A Electrooptical device, its mfg. method and electronic device |
03/10/2004 | CN1480780A displaying device, its mfg. method and mfg. appts. |
03/09/2004 | US6704222 Multi-state operation of dual floating gate array |
03/09/2004 | US6704217 Symmetric segmented memory array architecture |
03/09/2004 | US6704186 Capacity type pressure sensor and method of manufacturing the pressure sensor |
03/09/2004 | US6704085 Liquid crystal display apparatus having superimposed portion of common signal electrode, data signal wiring and scanning wiring via insulator |
03/09/2004 | US6704069 TFT-LCD having particular gate insulator structure |
03/09/2004 | US6704068 LCD having a particular light-shield and connection |
03/09/2004 | US6703953 Semiconductor device, method of manufacturing semiconductor device and communication method |
03/09/2004 | US6703895 Semiconductor component and method of operating same |
03/09/2004 | US6703711 Semiconductor device and method for fabricating the same |
03/09/2004 | US6703710 Dual damascene metal trace with reduced RF impedance resulting from the skin effect |
03/09/2004 | US6703708 Graded thin films |
03/09/2004 | US6703701 Semiconductor device with integrated circuit elements of group III-V comprising means for preventing pollution by hydrogen |
03/09/2004 | US6703689 Miniature optical element for wireless bonding in an electronic instrument |
03/09/2004 | US6703688 Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits |
03/09/2004 | US6703687 Bipolar transistor and method for manufacturing the same |
03/09/2004 | US6703686 Semiconductor device |
03/09/2004 | US6703685 Super self-aligned collector device for mono-and hetero bipolar junction transistors |
03/09/2004 | US6703684 Semiconductor device and method of forming a semiconductor device |
03/09/2004 | US6703681 Variable-capacitance capacitor |
03/09/2004 | US6703678 Schottky barrier field effect transistor large in withstanding voltage and small in distortion and return-loss |
03/09/2004 | US6703676 Magnetic memory device and manufacturing method thereof |
03/09/2004 | US6703672 Polysilicon/amorphous silicon composite gate electrode |
03/09/2004 | US6703671 Insulated gate semiconductor device and method of manufacturing the same |
03/09/2004 | US6703670 Eliminates the need for a separate mask and implant step to set the threshold voltage of the depletion-mode transistor |
03/09/2004 | US6703669 Semiconductor device having serially connected memory cell transistors provided between two current terminals |
03/09/2004 | US6703667 Semiconductor integrated circuit device with connections formed using a conductor embedded in a contact hole |
03/09/2004 | US6703665 Transistor |
03/09/2004 | US6703664 Power FET device |
03/09/2004 | US6703663 CMOS device using additional implant regions to enhance ESD performance and device manufactured thereby |
03/09/2004 | US6703662 Semiconductor device and manufacturing method thereof |
03/09/2004 | US6703659 Low voltage programmable and erasable flash EEPROM |
03/09/2004 | US6703658 Non-volatile semiconductor memory device and its manufacturing method |
03/09/2004 | US6703655 Long-memory- retention-time single transistor ferroelectric ram |
03/09/2004 | US6703649 Semiconductor element |
03/09/2004 | US6703648 Strained silicon PMOS having silicon germanium source/drain extensions and method for its fabrication |
03/09/2004 | US6703647 Triple base bipolar phototransistor |
03/09/2004 | US6703646 Thyristor with lightly-doped emitter |
03/09/2004 | US6703645 Spin filter |
03/09/2004 | US6703642 Silicon carbide (SiC) gate turn-off (GTO) thyristor structure for higher turn-off gain and larger voltage blocking when in the off-state |
03/09/2004 | US6703639 Nanofabrication for InAs/AlSb heterostructures |
03/09/2004 | US6703638 Enhancement and depletion-mode phemt device having two ingap etch-stop layers |
03/09/2004 | US6703327 High-pressure anneal process for integrated circuits |
03/09/2004 | US6703326 High-pressure anneal process for integrated circuits |
03/09/2004 | US6703325 High pressure anneal process for integrated circuits |
03/09/2004 | US6703303 Method of manufacturing a portion of a memory |
03/09/2004 | US6703298 Self-aligned process for fabricating memory cells with two isolated floating gates |
03/09/2004 | US6703296 Method for forming metal salicide |
03/09/2004 | US6703294 Method for producing a region doped with boron in a SiC-layer |
03/09/2004 | US6703292 Method of making a semiconductor wafer having a depletable multiple-region semiconductor material |
03/09/2004 | US6703283 Discontinuous dielectric interface for bipolar transistors |
03/09/2004 | US6703280 SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the same |
03/09/2004 | US6703279 Semiconductor device having contact of Si-Ge combined with cobalt silicide |
03/09/2004 | US6703278 Method of forming layers of oxide on a surface of a substrate |
03/09/2004 | US6703277 Reducing agent for high-K gate dielectric parasitic interfacial layer |
03/09/2004 | US6703276 Passivated silicon carbide devices with low leakage current and method of fabricating |
03/09/2004 | US6703275 Flash memory cell and method of manufacturing the same, and programming/erasing/reading method in the flash memory cell |
03/09/2004 | US6703273 Aggressive capacitor array cell layout for narrow diameter DRAM trench capacitor structures via SOI technology |
03/09/2004 | US6703271 Complementary metal oxide semiconductor transistor technology using selective epitaxy of a strained silicon germanium layer |
03/09/2004 | US6703268 Method to fabricate an intrinsic polycrystalline silicon film |
03/09/2004 | US6703266 Method for fabricating thin film transistor array and driving circuit |
03/09/2004 | US6703265 Semiconductor device and method of manufacturing the same |
03/09/2004 | US6703264 Method of manufacturing a semiconductor device |
03/04/2004 | WO2004019609A2 A cmos aps with stacked avalanche multiplication layer and low voltage readout electronics |
03/04/2004 | WO2004019490A1 Encapsulated electronic component and production method |
03/04/2004 | WO2004019418A1 Silicon nanoparticles embedded in polymer matrix |
03/04/2004 | WO2004019416A1 High-frequency switch |
03/04/2004 | WO2004019415A1 GaN-TYPE ENHANCEMENT MOSFET USING HETERO STRUCTURE |
03/04/2004 | WO2004019414A1 Tri-gate devices and methods of fabrication |
03/04/2004 | WO2004019410A1 Ferroelectric device and method of manufacturing such a device |
03/04/2004 | WO2004019408A1 Contactless mask programmable rom |
03/04/2004 | WO2004019400A1 Thin film transistor |
03/04/2004 | WO2004019394A1 Atomic layer deposition of cmos gates |
03/04/2004 | WO2004019390A2 Mbe growth of an algan layer or algan multilayer structure |
03/04/2004 | WO2004019384A2 Semiconductor constructions with gated isolation regions having indium-doped sub-regions |
03/04/2004 | WO2004019382A2 Tft sensor having improved imaging surface |
03/04/2004 | WO2004019380A2 Method and apparatus for improved mos gating to reduce miller capacitance and switching losses |
03/04/2004 | WO2004019373A2 Nanocrystal electron device |
03/04/2004 | WO2004019372A2 Contactless mask programmable rom |
03/04/2004 | WO2004019123A1 Manufacture of electronic devices comprising thin-film circuit elements |
03/04/2004 | WO2004018743A1 Diboride single crystal substrate, semiconductor device using this and its manufacturing method |
03/04/2004 | WO2004004927A8 Nanostructures and methods for manufacturing the same |
03/04/2004 | WO2004001854A3 Semiconductor device with edge structure |
03/04/2004 | WO2003105189A3 Strained-semiconductor-on-insulator device structures |
03/04/2004 | WO2003075345A3 Raised extension structure for high performance cmos |
03/04/2004 | WO2003054965A3 Non-volatile memory and method of forming thereof |
03/04/2004 | WO2003054964A3 Monos device having buried metal silicide bit line |
03/04/2004 | WO2002050922A9 Gate electrode with depletion suppression and tunable workfunction |