| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 03/25/2004 | US20040055894 Process for producing semiconductor member, process for producing solar cell, and anodizing apparatus |
| 03/25/2004 | US20040055892 Deposition method for nanostructure materials |
| 03/25/2004 | US20040055530 Micro electron gun of quantum size effect type and flat display using such electron guns as well as methods of their manufacture |
| 03/25/2004 | DE10332590A1 Zeilendecodierer in einem Flashspeicher sowie Löschverfahren für eine Flashspeiicherzelle in diesem Row decoder in a flash memory and an erasing method for Flashspeiicherzelle in this |
| 03/25/2004 | DE10242877A1 Semiconductor substrate used in the production of a DRAM memory cell has a dielectric layer formed on the surface of recesses and carrier substrate, and an electrically conducting layer formed in the recesses to produce capacitor electrodes |
| 03/25/2004 | DE10242521A1 Diode used as a rectifier diode for rectifying a current fed to a vehicle generator has a head wire with a stepped wire connection with a region which forms a housing together with a sleeve, a base and a fixing region |
| 03/25/2004 | DE10240861A1 Semiconductor device for switch-mode power supply, has terminal electrode connected to drift zone via channel that is conductive when control voltage is equal to zero |
| 03/25/2004 | DE10240408A1 Transistorelement mit einem Anisotropen Gate-Dielektrikum MI großem ε Transistor element with an anisotropic gate dielectric MI large ε |
| 03/25/2004 | DE10239312A1 Production of a semiconductor component e.g. IGBT with a drift and a field stop layer comprises preparing a semiconductor layer having a base doping and an exposed front side, and introducing doping atoms into a drift zone region |
| 03/25/2004 | DE10239310A1 Production of an electrically conducting connection during the production of a source-down transistor comprises forming a recess extending from the front side up to a first layer |
| 03/25/2004 | DE10051644B4 Halbleiterbauelement Semiconductor device |
| 03/25/2004 | CA2495530A1 Nitrogen passivation of interface states in sio2/sic structures |
| 03/25/2004 | CA2441877A1 Semiconductor device having a nitride-based hetero-structure and method of manufacturing the same |
| 03/24/2004 | EP1401024A2 Semiconductor device and method for fabricating the same |
| 03/24/2004 | EP1401021A1 Power semiconductor device |
| 03/24/2004 | EP1399974A1 Mosfets with strained semiconductor layers |
| 03/24/2004 | EP1399973A2 Transistor-arrangement, method for operating a transistor-arrangement as a data storage element and method for producing a transistor-arrangement |
| 03/24/2004 | EP1399972A2 Memory cell, memory cell configuration and method for producing the same |
| 03/24/2004 | EP1399970A2 Cmos inverter circuits utilizing strained silicon surface channel mosfets |
| 03/24/2004 | EP1399968A2 Thyristor configuration and surge suppressor comprising a thyristor configuration of this type |
| 03/24/2004 | EP1399965A1 Isolation of sonos devices |
| 03/24/2004 | EP1399954A2 Fabrication of molecular electronic circuit by imprinting |
| 03/24/2004 | EP1399924A2 Method and apparatus for boosting bitlines for low vcc read |
| 03/24/2004 | EP1399879A1 Multi-feature-size electronic structures |
| 03/24/2004 | EP1186054B9 Current controlled field effect transistor |
| 03/24/2004 | EP0894339B1 Silicon carbide cmos and method of fabrication |
| 03/24/2004 | CN1484865A System and method for electrically induced breakdown of nanostructures |
| 03/24/2004 | CN1484862A Semiconductor device |
| 03/24/2004 | CN1484861A Non-volatile memory cells utilzing substrate trenches |
| 03/24/2004 | CN1484853A Method for producing a semiconductor component comprising a t-shpaed contact electrode |
| 03/24/2004 | CN1484852A Dielectric film and method of forming it semiconductor device nonvolatile semiconductor memory device and production method for semiconductor device |
| 03/24/2004 | CN1484778A Thin film transistor substrate using low dielectric constant and method for manufacturing the same |
| 03/24/2004 | CN1484478A Electrooptics device and mfg method, electronic instrument |
| 03/24/2004 | CN1484327A Gallium nitride-based III-V group compound semiconductor |
| 03/24/2004 | CN1484326A Gallium nitride-based III-V group compound semiconductor |
| 03/24/2004 | CN1484325A Gallium nitride-based III-V group compound semiconductor |
| 03/24/2004 | CN1484320A Silicon join tope diode and mfg method |
| 03/24/2004 | CN1484319A High temp resisting solid pressure resistance type plane film force sensitive chip and mfg method thereof |
| 03/24/2004 | CN1484316A Substrate device and mfg method electrooptical device and electronic apparatus |
| 03/24/2004 | CN1484315A Film semiconductor device and LCD |
| 03/24/2004 | CN1484287A Method for mfg of semiconduceor device |
| 03/24/2004 | CN1484284A Method for mfg diode |
| 03/24/2004 | CN1484277A Method for forming quantum point |
| 03/24/2004 | CN1484079A Active addressing LCD and mfg method thereof |
| 03/24/2004 | CN1484001A Capacitive dynamic quantity sensor |
| 03/24/2004 | CN1483662A Method for preparing nanowive crossbar structure and use of structure prepared by said method |
| 03/24/2004 | CN1143398C Semiconductor device for IC and mfg method |
| 03/24/2004 | CN1143397C Floating gate non-volatile memory device, and method of manufacturing same |
| 03/24/2004 | CN1143395C Semiconductor device and its associated ICs |
| 03/24/2004 | CN1143387C Reduced capacitance transistor with electron-static discharge protection structure and method for forming the same |
| 03/24/2004 | CN1143370C Semiconductor device, substrate for electro-optical device, electro-optical device, electronic device, and projection dispaly |
| 03/24/2004 | CN1143369C Method of processing semiconductor device with laser |
| 03/24/2004 | CN1143362C Method for manufacturing semiconductor device |
| 03/24/2004 | CN1143313C Flash memory array |
| 03/24/2004 | CN1143171C Semiconductor display device correcting system and correcting method, electronics device having active matrix display screen |
| 03/24/2004 | CN1143135C Miniature mechanical appts. |
| 03/24/2004 | CN1143121C Method for making angular rate sensor |
| 03/24/2004 | CN1142821C Self-dadressable self-assembling microelectronic system and devices for molecular biological analysis |
| 03/23/2004 | US6711723 Hybrid semi-physical and data fitting HEMT modeling approach for large signal and non-linear microwave/millimeter wave circuit CAD |
| 03/23/2004 | US6711064 Single-poly EEPROM |
| 03/23/2004 | US6711060 Non-volatile semiconductor memory and methods of driving, operating, and manufacturing this memory |
| 03/23/2004 | US6711058 Erase method for nonvolatile semiconductor storage device and row decoder circuit for fulfilling the method |
| 03/23/2004 | US6711049 One transistor cell FeRAM memory array |
| 03/23/2004 | US6710827 Liquid crystal display device having sub-pixel electrodes and defect correction method therefor |
| 03/23/2004 | US6710639 Emitter turn-off thyristors and their drive circuits |
| 03/23/2004 | US6710465 Scalable two transistor memory device |
| 03/23/2004 | US6710441 Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switching device, power conversion methods, power semiconductor switching device packaging methods, and methods of forming a power transistor |
| 03/23/2004 | US6710428 Porous silicon oxycarbide integrated circuit insulator |
| 03/23/2004 | US6710427 Distributed power device with dual function minority carrier reduction |
| 03/23/2004 | US6710424 RF chipset architecture |
| 03/23/2004 | US6710419 Method of manufacturing a schottky device |
| 03/23/2004 | US6710418 Schottky rectifier with insulation-filled trenches and method of forming the same |
| 03/23/2004 | US6710416 Split-gate metal-oxide-semiconductor device |
| 03/23/2004 | US6710414 Array of discrete tiles formed above common drain region; gate metallization layer; varied in both the x-axis and the y- axis by predetermined increments; bonding pads |
| 03/23/2004 | US6710411 Method for crystallizing silicon film and thin film transistor and fabricating method using the same |
| 03/23/2004 | US6710410 Hybrid circuit and electronic device using same |
| 03/23/2004 | US6710409 Inverted staggered thin film transistor with etch stop layer and method of making same |
| 03/23/2004 | US6710408 Thin film transistor array substrate for liquid crystal display structure |
| 03/23/2004 | US6710407 Semiconductor device having smooth refractory metal silicide layers and process for fabrication thereof |
| 03/23/2004 | US6710406 Field effect transistor and method of its manufacture |
| 03/23/2004 | US6710405 Non-uniform power semiconductor device |
| 03/23/2004 | US6710404 High voltage device and method for fabricating the same |
| 03/23/2004 | US6710403 Dual trench power MOSFET |
| 03/23/2004 | US6710402 Vertical MOS transistor and a method of manufacturing the same |
| 03/23/2004 | US6710401 Semiconductor device including a trench with at least one of an edge of an opening and a bottom surface being round |
| 03/23/2004 | US6710400 Method for fabricating a high voltage power MOSFET having a voltage sustaining region that includes doped columns formed by rapid diffusion |
| 03/23/2004 | US6710399 Nonvolatile semiconductor storage device |
| 03/23/2004 | US6710398 Scalable stack-type DRAM memory structure and its manufacturing methods |
| 03/23/2004 | US6710396 Self-aligned split-gate flash cell structure and its contactless flash memory arrays |
| 03/23/2004 | US6710395 Non-volatile semiconductor memory device with improved performance |
| 03/23/2004 | US6710394 Method of making floating gate non-volatile memory cell with low erasing voltage having double layer gate dielectric |
| 03/23/2004 | US6710391 Integrated DRAM process/structure using contact pillars |
| 03/23/2004 | US6710390 Capacitors and DRAM arrays |
| 03/23/2004 | US6710388 Ferroelectric transistor, use thereof in a memory cell configuration and method of producing the ferroelectric transistor |
| 03/23/2004 | US6710383 MISFET semiconductor device having a high dielectric constant insulating film with tapered end portions |
| 03/23/2004 | US6710382 Semiconductor device and method for fabricating the same |
| 03/23/2004 | US6710380 Diode, method for fabricating the diode, and coplanar waveguide |
| 03/23/2004 | US6710379 Fully relaxed channel HEMT device |
| 03/23/2004 | US6710372 Thin film transistor array panel for liquid crystal display |
| 03/23/2004 | US6710368 Quantum tunneling transistor |