Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
02/2004
02/19/2004US20040031993 Semiconductor device
02/19/2004US20040031992 DRAM having improved leakage performance and method for making same
02/19/2004US20040031989 Two terminal programmable mos-gated current source
02/19/2004US20040031988 Semiconductor integrated circuit device having deposited layer for gate insulation
02/19/2004US20040031987 Method for fabricating a transistor configuration including trench transistor cells having a field electrode, trench transistor, and trench configuration
02/19/2004US20040031986 Non-volatile memory and semiconductor device
02/19/2004US20040031985 Boron-doped gate electrode formed above high- permittivity insulator film and high-permittivity nitride formed between
02/19/2004US20040031984 Vertical NROM and methods for making thereof
02/19/2004US20040031981 Self-aligned vertical gate semiconductor device
02/19/2004US20040031979 Strained-semiconductor-on-insulator device structures
02/19/2004US20040031976 Semiconductor device and its manufacture
02/19/2004US20040031975 Field effect transistor memory cell, memory device and method for manufacturing a field effect transistor memory cell
02/19/2004US20040031974 Hourglass ram
02/19/2004US20040031971 High reverse voltage silicon carbide diode and method of manufacturing the same high reverse voltage silicon carbide diode
02/19/2004US20040031970 Process for retarding lateral diffusion of phosphorous
02/19/2004US20040031969 Overvoltage protection
02/19/2004US20040031964 Transistor and display comprising it
02/19/2004US20040031963 Conductive thin film for semiconductor device, semiconductor device, and method of manufacturing the same
02/19/2004US20040031961 Thin-film transistor
02/19/2004US20040031956 Heterogeneous bandgap structures for semiconductor devices and manufacturing methods therefor
02/19/2004US20040031772 Preventing gate oxice thinning effect in a recess LOCOS process
02/19/2004DE19906815B4 Flüssigkristallanzeige und Verfahren zur Herstellung derselben Liquid crystal display and method of manufacturing the same
02/19/2004DE19736204B4 Dünnschichttransistor, Flüssigkristallanzeige mit Dünnschichttransistor und Herstellungsverfahren dafür Thin film transistor liquid crystal display with thin film transistor and manufacturing method thereof
02/19/2004DE10330490A1 Metal-insulator-metal integrated circuit capacitor for integrated circuit devices, comprises pair of capacitors on integrated circuit substrate that are electrically connected in antiparallel
02/19/2004DE10233663A1 Production of a SOI substrate comprises preparing a SOI substrate by embedding a trenched oxide layer between a crystalline silicon layer and a silicon substrate
02/19/2004DE10231964A1 Halbleiterbauelement mit stressaufnehmender Halbleiterschicht sowie zugehöriges Herstellungsverfahren Semiconductor component with stress-absorbing semiconductor layer and manufacturing method thereof
02/19/2004DE10231407A1 Bipolartransistor Bipolar transistor
02/18/2004EP1389799A1 Method for production of a layered structure with nanocrystals in a dielectric layer
02/18/2004EP1389526A1 Substrate for ink jet recording head, ink jet recording head and ink jet recording apparatus using ink jet recording head
02/18/2004EP1389350A1 Nucleic acid circuit elements and methods
02/18/2004EP1389348A2 Structure and method to preserve sti during etching
02/18/2004EP1389345A1 Chip scale package with flip chip interconnect
02/18/2004CN1476639A Semiconductor device and its mfg. method
02/18/2004CN1476638A Semiconductor device and apparatus for communication system
02/18/2004CN1476637A Fabrication of semiconductor devices
02/18/2004CN1476596A Device comprising array of pixels allowing storage of data
02/18/2004CN1476281A Active matrix type organic electroluminous display device and its manufacturing method
02/18/2004CN1476104A Semiconductor device and its manufacturing method
02/18/2004CN1476103A Semiconductor device containing nitrided layer
02/18/2004CN1476102A Structure of semiconductor component part and its manufacturing method
02/18/2004CN1476090A Bipolar transistor used on chip for electrostatic discharging protection and its method
02/18/2004CN1476062A Method for forming semiconductor film and laser apparatus for the method
02/18/2004CN1476059A Crystallizing device, optical device for crystallizing device, crystallizing method, film transistor and display
02/18/2004CN1476049A Pattern forming method
02/18/2004CN1476019A Magnetic storage device with magnetic yoke layer and its mfg. method
02/18/2004CN1475852A Liquid crystal display with transparent conductive film on sandwich insulated film formed by coating
02/18/2004CN1475839A 液晶显示装置 The liquid crystal display device
02/18/2004CN1475782A Capacitance mechanics quantity sensor and its mfg. method and detector containing sensor
02/18/2004CN1139134C Insulating gate type bipolar semiconductor device
02/18/2004CN1139132C Semiconductor devices and mfg. method thereof
02/18/2004CN1139131C Memory cell arrangement and process for mfg. the same
02/18/2004CN1139128C Semiconductor device and method of mfg. the same
02/18/2004CN1139114C Method of mfg. split-gate flash memory cell
02/17/2004US6693687 Liquid crystal display device having counter electrode with overlapping relation with drain line and extends in region of light-blocking film
02/17/2004US6693671 Fast-dump structure for full-frame image sensors with lod antiblooming structures
02/17/2004US6693366 Electroless deposition of doped noble metals and noble metal alloys
02/17/2004US6693364 Optical integrated circuit element package and process for making the same
02/17/2004US6693358 Semiconductor chip, wiring board and manufacturing process thereof as well as semiconductor device
02/17/2004US6693354 Semiconductor structure with substantially etched nitride defects protruding therefrom
02/17/2004US6693352 Contact structure for group III-V semiconductor devices and method of producing the same
02/17/2004US6693350 Semiconductor device having radiation structure and method for manufacturing semiconductor device having radiation structure
02/17/2004US6693341 Forming a gate insulating film on a semiconductor substrate; forming a silicon film on insulating film; forming a pattern of an oxidation resisting film on silicon film; thermally oxidizing first silicon film; removing pattern; patterning
02/17/2004US6693340 Lateral semiconductor device
02/17/2004US6693339 Semiconductor component and method of manufacturing same
02/17/2004US6693338 Power semiconductor device having RESURF layer
02/17/2004US6693337 Semiconductor photodetection device
02/17/2004US6693335 Semiconductor raised source-drain structure
02/17/2004US6693330 Semiconductor device and method of manufacturing the same
02/17/2004US6693329 Semiconductor devices having a field effect transistor and a bi-polar transistor
02/17/2004US6693328 Semiconductor device formed in a semiconductor layer provided on an insulating film
02/17/2004US6693327 Lateral semiconductor component in thin-film SOI technology
02/17/2004US6693326 Semiconductor device of SOI structure
02/17/2004US6693324 Semiconductor device having a thin film transistor and manufacturing method thereof
02/17/2004US6693323 Super-junction semiconductor device
02/17/2004US6693322 Semiconductor construction with buried island region and contact region
02/17/2004US6693321 Replacing layers of an intergate dielectric layer with high-K material for improved scalability
02/17/2004US6693314 Junction field-effect transistor with more highly doped connecting region
02/17/2004US6693313 Field effect transistors, field effect transistor assemblies, and integrated circuitry
02/17/2004US6693310 Semiconductor device and manufacturing method thereof
02/17/2004US6693308 Power SiC devices having raised guard rings
02/17/2004US6693300 Semiconductor thin film and semiconductor device
02/17/2004US6693299 Semiconductor device and method of manufacturing the same
02/17/2004US6693294 Schottky barrier tunnel transistor using thin silicon layer on insulator and method for fabricating the same
02/17/2004US6693258 Process for producing thin film semiconductor device and laser irradiation apparatus
02/17/2004US6693257 Laser irradiation apparatus, laser irradiation method, and method for manufacturing a semiconductor device
02/17/2004US6693051 Silicon oxide based gate dielectric layer
02/17/2004US6693048 High-pressure anneal process for integrated circuits
02/17/2004US6693044 Semiconductor device and method of manufacturing the same
02/17/2004US6693041 Self-aligned STI for narrow trenches
02/17/2004US6693036 Method for producing semiconductor device polishing apparatus, and polishing method
02/17/2004US6693033 Method of removing an amorphous oxide from a monocrystalline surface
02/17/2004US6693027 Method for configuring a device to include a negative differential resistance (NDR) characteristic
02/17/2004US6693026 Semiconductor device and method for fabricating the same
02/17/2004US6693024 Semiconductor component with a semiconductor body having a multiplicity of pores and method for fabricating
02/17/2004US6693013 Semiconductor transistor using L-shaped spacer and method of fabricating the same
02/17/2004US6693012 Method and device to reduce gate-induced drain leakage (GIDL) current in thin gate oxide MOSFETs
02/17/2004US6693011 Power MOS element and method for producing the same
02/17/2004US6693010 Split gate memory cell with a floating gate in the corner of a trench
02/17/2004US6693009 Flash memory cell with minimized floating gate to drain/source overlap for minimizing charge leakage
02/17/2004US6693007 Methods of utilizing a sacrificial layer during formation of a capacitor