Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
04/2004
04/15/2004US20040070035 Semiconductor transistor having a stressed channel
04/15/2004US20040070034 Semiconductor device and method of forming the same
04/15/2004US20040070032 LSI device and manufacturing method of the above
04/15/2004US20040070031 Soi mosfet device having second gate electrodes for threshold voltage control
04/15/2004US20040070030 Non-volatile memory device and method for forming
04/15/2004US20040070029 Low voltage transient voltage suppressor and method of making
04/15/2004US20040070028 Method of forming a low resistance semiconductor device and structure therefor
04/15/2004US20040070027 Double sided IGBT phase leg architecture and clocking method for reduced turn on loss
04/15/2004US20040070026 Semiconductor integrated circuit
04/15/2004US20040070024 MOSFET with a thin gate insulating film
04/15/2004US20040070023 Semiconductor device and method of manufacturing the same
04/15/2004US20040070022 EEPROM and EEPROM manufacturing method
04/15/2004US20040070021 Flash memory array with increased coupling between floating and control gates
04/15/2004US20040070020 Nonvolatile semiconductor memory device and method for operating the same
04/15/2004US20040070016 Methods of forming semiconductor constructions
04/15/2004US20040070013 Lateral semiconductor device and vertical semiconductor device
04/15/2004US20040070007 Vertical field effect transistors including conformal monocrystalline silicon layer on trench sidewall
04/15/2004US20040070005 Compact high voltage ESD protection diode
04/15/2004US20040070003 Semiconductor structure having a textured nitride-based layer
04/15/2004US20040070002 Semiconductor device
04/15/2004US20040069990 Charge storage region comprises a tunneling dielectric located adjacent to the active layer, a blocking dielectric located adjacent to the gate electrode and a charge storage dielectric located between the tunneling and blocking dielectrics
04/15/2004US20040069987 Organic electroluminescence panel
04/15/2004US20040069986 Dual panel-type organic electroluminescent display device
04/15/2004US20040069982 Compositionally modified resistive electrode
04/15/2004US20040069751 Irradiating second harmonic of CW laser and a fundamental wave of CW laser at the same time to the same portion to improve annealing efficiency
04/15/2004US20040069289 Ignition device of internal combustion engine
04/15/2004US20040068864 Web fabrication of devices
04/15/2004DE4407250B4 Verfahren zur Herstellung eines PMOS-Feleffekttransistors, in einem Halbleiterbauelement, PMOS-Feldeffekttransistor, Polysiliziumschicht in einem Halbleiterbauelement und Verfahren zu deren Herstellung A method for producing a PMOS Feleffekttransistors, in a semiconductor device, PMOS field effect transistor, polysilicon layer in a semiconductor device and process for their preparation
04/15/2004DE4344285B4 Verfahren zur Herstellung eines Transistors A method of manufacturing a transistor
04/15/2004DE4319211B4 Tunnel-BARITT-Diode Tunnel-diode BARRIT
04/15/2004DE19734837B4 Verfahren zur Herstellung eines selbstausrichtenden Silicids A method for producing a self-aligned silicide
04/15/2004DE19702531B4 IPG-Transistor mit vertikalem Gate-Komplex und Verfahren zu dessen Herstellung IPG transistor with vertical gate complex and process for its preparation
04/15/2004DE10344862A1 Verfahren zur Herstellung eines dicken Isolationskragens mit reduzierter Länge A method for producing a thick insulating collar with reduced length
04/15/2004DE10334836A1 Halbleiterwafer und ein entsprechendes Herstellungsverfahren Semiconductor wafer, and a corresponding production method
04/15/2004DE10296545T5 Verfahren zur Herstellung von Bauteilen mit MOS-Gatesteuerung mit verringerter Maskenzahl Process for the production of components with MOS gated with a reduced number of masks
04/15/2004DE10245867A1 Power semiconductor component, e.g. diode or metal oxide semiconductor field effect transistor, includes insulating layer with holes over terminals, onto which electrodes are deposited, making contact with terminals
04/15/2004DE10245608A1 Halbleiterelement mit verbesserten Halo-Strukturen und Verfahren zur Herstellung der Halo-Strukturen eines Halbleiterelements Semiconductor element with improved Halo structures and methods of making of the Halo structures of a semiconductor element
04/15/2004DE10245590A1 Halbleiterbauelement mit Praseodymoxid-Dielektrikum A semiconductor device comprising praseodymium oxide dielectric
04/15/2004DE10245575A1 Field effect transistor includes doped island below channel region in semiconductor of opposite conductivity, separated from contact regions
04/15/2004DE10245550A1 Kompensationsbauelement und Verfahren zu dessen Herstellung Compensation component and method for its production
04/15/2004DE10245249A1 Trench transistor includes insulation layer projecting over spacer along surface of semiconductor region, serving as dopant source
04/15/2004DE10245153A1 Integrierter Feldeffekttransistor mit zwei Steuerbereichen, Verwendung dieses Feldeffekttranistors und Herstellungsverfahren Integrated field-effect transistor having two control areas, the use of this manufacturing method and Feldeffekttranistors
04/15/2004DE10149725B4 Anisotroper Herstellungsprozess von Oxidschichten in einem Substratgraben Anisotropic manufacturing process of oxide films in a substrate trench
04/15/2004CA2499965A1 Large-area nanoenabled macroelectronic substrates and uses therefor
04/15/2004CA2499950A1 Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites
04/15/2004CA2499944A1 Integrated displays using nanowire transistors
04/14/2004EP1408555A2 Method of fabricating variable length vertical CMOS transistors
04/14/2004EP1408554A2 Field effect controlled semiconductor component
04/14/2004EP1408553A2 Semiconductor device and method for fabricating the same
04/14/2004EP1408552A1 Integrated MOS semiconductor device with high performance and process of manufacturing the same
04/14/2004EP1408550A1 Array of cells including a selection bipolar transistor and fabrication method thereof
04/14/2004EP1408549A1 Process for manufacturing an array of cells including selection bipolar junction transistors
04/14/2004EP1408542A2 High-speed MOS-technology power device integrated structure, and related manufacturing process
04/14/2004EP1408541A1 Hafnium silicide target for forming gate oxide film and method for preparation thereof
04/14/2004EP1408511A1 Single bit nonvolatile memory cell and methods for programming and erasing thereof
04/14/2004EP1407493A1 Single-electron transistors and fabrication methods in which a projecting feature defines spacing between electrodes
04/14/2004EP1407492A2 Single-electron transistors and fabrication methods
04/14/2004EP1407486A2 Transistor and method for making a transistor on a sige/soi substrate
04/14/2004EP1407485A2 Manufacture of trench-gate field-effect transistors
04/14/2004EP1407480A1 Manufacturing of a low-noise mos device
04/14/2004EP1407476A2 Power mos device with asymmetrical channel structure
04/14/2004EP1407464A1 Micro-electromechanical sensor
04/14/2004EP1407317A2 A method of forming a reflective electrode and a liquid crystal display device
04/14/2004EP1407192A2 Fabrication of an electrically conductive silicon carbide article
04/14/2004EP0878025B1 Semiconductor device with a high-frequency bipolar transistor on an insulating substrate
04/14/2004CN1489790A Thin-film transistor structure, method for manufacturing thin-film transistor structure and display device using same
04/14/2004CN1489786A Preparation of relaxed siGe layer on insulator
04/14/2004CN1489784A Method of producing electronic device material
04/14/2004CN1489220A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
04/14/2004CN1489219A Transistor structure including single anti-punchthrough layer and its formation method
04/14/2004CN1489217A Film transistor array face-board
04/14/2004CN1489215A Semiconductor device and manufacturing method thereof
04/14/2004CN1489214A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
04/14/2004CN1489213A Integrated circuit capacitor
04/14/2004CN1489210A Static discharge protection circuit and relative metal oxide semiconductor transistor structure
04/14/2004CN1489189A Method for making platfond-shape film transistor with low-temp. polysilicon
04/14/2004CN1489181A Method for manufacturing semiconductor device
04/14/2004CN1488976A Wiring structure and electrooptical device manufacturing method, electrooptical device and electronic apparatus
04/14/2004CN1146058C Active matrix display device
04/14/2004CN1146057C Active matrix display device
04/14/2004CN1146056C Active matrix display
04/14/2004CN1146055C Electrode means, with or without functional elements and an electrode device including polymer material and an electrode device formed of said means
04/14/2004CN1146047C Lateral bipolar field effect mode hydrid transistor and method for mfg. same
04/14/2004CN1146045C 半导体器件 Semiconductor devices
04/14/2004CN1146033C Improvement of SAC process flow method using isolating spacer
04/14/2004CN1146028C Method for mfg. lightly mixed leakage polar/bias structure of thin film transistor
04/14/2004CN1146015C Method for making semiconductor device
04/14/2004CN1145922C Electric level converter and active matrix type indicator using same
04/14/2004CN1145838C Active matrix substrate, electro-optic convertion device, method of manufacturing active matrix substrate, and electric device
04/14/2004CN1145800C Semiconductor device and sensor
04/13/2004US6721208 Method of erasing flash memory cells
04/13/2004US6721206 Methods of accessing floating-gate memory cells having underlying source-line connections
04/13/2004US6721205 Nonvolatile semiconductor memory device and methods for operating and producing the same
04/13/2004US6721046 Utilizing light reflection analysis
04/13/2004US6721028 Apparatus for fringe field switching liquid crystal display
04/13/2004US6721005 Solid state image sensor having different structures for effective pixel area and optical black area
04/13/2004US6720728 Devices containing a carbon nanotube
04/13/2004US6720666 BOC BGA package for die with I-shaped bond pad layout
04/13/2004US6720641 Failure analysis and fault isolation flip chip testing
04/13/2004US6720637 SiGe transistor, varactor and p-i-n velocity saturated ballasting element for BiCMOS peripheral circuits and ESD networks