Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
05/2014
05/08/2014US20140124784 Conductive structure and method for manufacturing the same, thin film transistor, array substrate and display device
05/08/2014US20140124783 Thin-film transistor and method for manufacturing thin-film transistor
05/08/2014US20140124781 Thin film transistor, method of manufacturing the same, and display unit
05/08/2014US20140124778 Semiconductor device and method for driving the same
05/08/2014US20140124776 Metal oxide film and method for forming metal oxide film
05/08/2014US20140124775 Coating solution for forming transparent dielectric thin film for low-temperature solution process and transparent inorganic thin-film transistor having thin film formed by the coating solution
05/08/2014US20140124774 Mosfet device
05/08/2014US20140124770 Active matrix type display apparatus and a driving device of a load
05/08/2014US20140124755 Thin film transistor and method of manufacturing the same
05/08/2014US20140124746 Thin film transistor, and organic light-emitting display device therewith
05/08/2014US20140124741 Devices containing organic polymeric multi-metallic composites
05/08/2014US20140124738 High temperature superfluidity system
05/08/2014US20140124737 Carbon nanotube network thin-film transistors on flexible/stretchable substrates
05/08/2014US20140124736 Carbon nanotube transistor employing embedded electrodes
05/08/2014US20140124713 High-aspect ratio screen printable thick film paste compositions containing wax thixotropes
05/08/2014DE112012001986T5 Bipolares Punch-Through-Halbleiterbauelement und Verfahren zur Herstellung eines derartigen Halbleiterbauelements Bipolar punch-through semiconductor device and method of manufacturing such a semiconductor device
05/08/2014DE112006000261B4 Verfahren zur Herstellung eines kapazitiven Elements mittels Ätzverfahren A method of manufacturing a capacitance element by means of etching
05/08/2014DE102013222224A1 Varaktordiode, elektrisches bauelement und herstellungsverfahren Varactor diode, electric-device and manufacturing processes
05/08/2014DE102013222147A1 Spannungsentlastung für in Kunststoff verkapselte Bauelemente Stress relief for encapsulated in plastic components
05/08/2014DE102013214132A1 Semiconductor device e.g. integrated circuit for electronic product e.g. computer, has N-type drain region which is formed below the second diffusion region of transistor and within first device portion
05/08/2014DE102012113217A1 Halbleitervorrichtung und Verfahren zur Herstellung derselben A semiconductor device and method of manufacturing the same
05/08/2014DE102012107496B4 Metallgate-FINFET-Bauelement und Verfahren zu seiner Herstellung Metal gate FinFET device and process for its preparation
05/08/2014DE102011086761B4 Halbleitervorrichtung Semiconductor device
05/08/2014DE102010064287B4 Verfahren zum zuverlässigen Einbetten von Metallsilizidkontaktgebieten in stark dotierte Drain- und Sourcegebiete durch eine Silizidstoppschicht und entsprechendes Halbleiterbauelement Reliable method for embedding Metallsilizidkontaktgebieten in heavily doped drain and source regions by a Silizidstoppschicht and corresponding semiconductor device
05/08/2014DE102008026516B4 Halbleitervorrichtung mit PN-Säulenschicht und Verfahren zu deren Fertigung A semiconductor device having PN column layer and methods of their production
05/07/2014EP2728904A1 Vibrating element and method for producing vibrating element
05/07/2014EP2728621A1 Insulated gate power semiconductor device
05/07/2014EP2728612A1 Method for producing semiconductor device
05/07/2014EP2727148A1 AlGaN/GaN HYBRID MOS-HFET
05/07/2014EP2727136A2 Process for a sealed mems device with a portion exposed to the environment
05/07/2014EP2727133A1 Method for manufacturing a thick epitaxial layer of gallium nitride on a silicon or similar substrate and layer obtained using said method
05/07/2014EP2726832A1 Resistive device comprising a silcon-nanowire-comprising strain gauge and method for optimizing the electrical consumption of such a device
05/07/2014CN203589042U 一种轴向二极管 An axially diode
05/07/2014CN203589041U 一种快恢复二极管 In fast recovery diode
05/07/2014CN203589040U 一种晶体管 A transistor
05/07/2014CN203589039U 一种多晶硅发射极BiCMOS工艺中减小发射极电阻的NPN管结构 One kind polyemitter BiCMOS process, reduce the emitter resistance of the NPN structure
05/07/2014CN203589038U 一种汽车整流芯片 An automobile rectifier chip
05/07/2014CN203589030U 半导体器件 Semiconductor devices
05/07/2014CN203589027U 一种平面工艺下的三维集成电路 3D IC technology under a plane
05/07/2014CN203589025U 阵列基板和显示装置 An array substrate and a display device
05/07/2014CN203589002U 一种功率管的封装结构 A power tube package
05/07/2014CN203588990U 一种用于单粒子激光脉冲试验的功率vdmos器件 Power vdmos device for a single particle laser pulse test
05/07/2014CN203588976U 一种具有无边界接触窗的半导体元件 Borderless contact window having a semiconductor element
05/07/2014CN1964077B 电容器及其制造方法、以及包含该电容器的半导体器件 Capacitor and a manufacturing method and a semiconductor device comprising the capacitor
05/07/2014CN103782393A 肖特基二极管 Schottky diodes
05/07/2014CN103782392A Ga2O3 系半导体元件 Ga2O3-based semiconductor element
05/07/2014CN103782391A 碳化硅半导体器件及其制造方法 The silicon carbide semiconductor device and its manufacturing method
05/07/2014CN103782390A 垂直栅极射频横向扩散金氧半场效晶体管(ldmos)装置 Vertical gate RF laterally diffused metal oxide halftime effect transistor (ldmos) device
05/07/2014CN103782389A 制造碳化硅半导体器件的方法 The method of manufacturing a silicon carbide semiconductor device
05/07/2014CN103782386A 具有集成栅极电阻器和二极管接法mosfet的功率mosfet An integrated gate resistor and a diode-connected mosfet power mosfet
05/07/2014CN103782385A 用于静电放电指的增强互相触发的多通道同质路径 For multi-channel refers to the homogeneity of the electrostatic discharge paths to each other to enhance the trigger
05/07/2014CN103782375A 第iii族氮化物外延基板及其制造方法 Iii first nitride epitaxial substrate and manufacturing method
05/07/2014CN103782374A 显示装置用配线结构 Wiring structure of a display device
05/07/2014CN103779429A 高压二极管 High voltage diodes
05/07/2014CN103779428A 半导体装置及其制造方法 Semiconductor device and manufacturing method
05/07/2014CN103779427A 一种氧化物薄膜晶体管及其制备方法 An oxide thin film transistor and a method for preparing
05/07/2014CN103779426A 半导体装置 Semiconductor device
05/07/2014CN103779425A 一种铟镓锌氧化物半导体薄膜的制备方法 A method for preparing an indium gallium zinc oxide semiconductor thin film
05/07/2014CN103779424A 一种非晶态氮化镓或氮化铟薄膜晶体管及其制备方法 An amorphous gallium nitride, indium nitride, or a thin film transistor and a method for preparing
05/07/2014CN103779423A 半导体装置及其制造方法 Semiconductor device and manufacturing method
05/07/2014CN103779422A 半导体装置 Semiconductor device
05/07/2014CN103779421A 薄膜晶体管结构及其制作方法 Thin-film transistor structure and fabrication method thereof
05/07/2014CN103779420A 一种具有搭桥晶粒结构的多晶硅薄膜晶体管 A polysilicon thin film transistor having a grain structure bypass
05/07/2014CN103779419A 半导体装置 Semiconductor device
05/07/2014CN103779418A 一种新型结构的遂穿场效应晶体管及其制备方法 Tunneling field effect transistor and method for preparing a new structure
05/07/2014CN103779417A 一种基于复合漏极的高压器件及其制作方法 A high-pressure device and fabrication method based on a composite drain
05/07/2014CN103779416A 一种低vf的功率mosfet器件及其制造方法 A power mosfet device and manufacturing method of a low-vf
05/07/2014CN103779415A 平面型功率mos器件及其制造方法 Planar type power mos device and manufacturing method
05/07/2014CN103779414A 半导体装置及半导体装置的制造方法 Semiconductor device and manufacturing method of a semiconductor device
05/07/2014CN103779413A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
05/07/2014CN103779412A 一种基于耗尽型高压器件及其制作方法 A high-voltage depletion mode device and fabrication method based on
05/07/2014CN103779411A 基于超结槽栅的高压器件及其制作方法 Ultra-high-voltage junction grooved gate device and its production method based on
05/07/2014CN103779410A 基于超结漏场板的槽栅高压器件及其制作方法 Trench-gate ultra-high-voltage device and fabrication method based on junction leakage field plate
05/07/2014CN103779409A 基于耗尽型AlGaN/GaN HEMT器件结构及其制作方法 Based depletion mode AlGaN / GaN HEMT device structure and manufacturing method thereof
05/07/2014CN103779408A 基于耗尽型槽栅AlGaN/GaN HEMT器件结构及其制作方法 Based depletion type trench gate AlGaN / GaN HEMT device structure and manufacturing method thereof
05/07/2014CN103779407A 加源场板耗尽型AlGaN/GaN HEMT器件结构及其制作方法 Plus source field plate depletion mode AlGaN / GaN HEMT device structure and manufacturing method thereof
05/07/2014CN103779406A 加源场板耗尽型绝缘栅AlGaN/GaN器件结构及其制作方法 Plus source depletion type insulated gate field plate AlGaN / GaN device structure and manufacturing method thereof
05/07/2014CN103779405A GaAs衬底上生长赝配高电子迁移晶体管材料及方法 Grown on a GaAs substrate pseudomorphic high electron mobility transistor material and methods
05/07/2014CN103779404A P沟道注入效率增强型绝缘栅双极型晶体管 Injection efficiency of P-channel enhancement mode insulated gate bipolar transistor
05/07/2014CN103779403A 一种igbt芯片结构 One kind igbt chip architecture
05/07/2014CN103779402A 半导体结构与其制造方法 Semiconductor structure and its manufacturing method
05/07/2014CN103779401A 栅极结构及其制造方法 The gate structure and manufacturing method
05/07/2014CN103779400A 一种复合电极及其制备方法 A composite electrode and its preparation method
05/07/2014CN103779399A 一种具有超结结构的半导体器件 A semiconductor device having a super junction structure
05/07/2014CN103779398A 带源场板槽栅AlGaN/GaN HEMT器件结构及其制作方法 With source field plate trench-gate AlGaN / GaN HEMT device structure and manufacturing method thereof
05/07/2014CN103779397A InAlN/InGaN异质结材料结构及其生长方法 InAlN / InGaN heterojunction material structure and its growth method
05/07/2014CN103779396A 石墨烯基复合结构及其制备方法 Graphene-based composite structure and a method for preparing
05/07/2014CN103779395A 一种具有阈开关效应的多铁陶瓷半导体及其制备的方法 The method of preparation of a ceramic semiconductor and having a threshold switching effect of multiferroic
05/07/2014CN103779394A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
05/07/2014CN103779393A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
05/07/2014CN103779392A 晶体管布局装置 Transistor layout device
05/07/2014CN103779391A 一种具有搭桥晶粒结构的多晶硅薄膜及其制备方法 Polysilicon thin film preparation method thereof having bypass grain structure
05/07/2014CN103779360A 显示基板及其制作方法、显示装置 Display substrate and its production method, a display device
05/07/2014CN103779359A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
05/07/2014CN103779354A 薄膜晶体管矩阵面板及其制造方法 The thin film transistor array panel and a method of manufacturing
05/07/2014CN103779353A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
05/07/2014CN103779274A 一种恒电流二极管单元及其制作方法 One kind of constant current diode unit and its manufacturing method
05/07/2014CN103779232A 一种薄膜晶体管的制作方法及薄膜晶体管 A method of manufacturing a thin film transistor and a thin film transistor
05/07/2014CN103779229A 半导体结构及其制造方法 The semiconductor structure and a method of manufacturing
05/07/2014CN103779226A 准纳米线晶体管及其制造方法 Quasi - nanometer line transistor and manufacturing method thereof
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