Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
05/2014
05/06/2014US8716745 Stable diodes for low and high frequency applications
05/06/2014US8716726 Organic light emitting illuminant, and device and method for the production thereof
05/06/2014US8716725 Package for multiple light emitting diodes
05/06/2014US8716723 Reflective layer between light-emitting diodes
05/06/2014US8716722 Photosensor chip package structure
05/06/2014US8716721 Light emitting device and manufacturing method thereof
05/06/2014US8716718 Epitaxial SiC single crystal substrate and method of manufacture of epitaxial SiC single crystal substrate
05/06/2014US8716717 Semiconductor device and method for manufacturing the same
05/06/2014US8716716 Method and system for junction termination in GaN materials using conductivity modulation
05/06/2014US8716715 Thin film transistor substrate
05/06/2014US8716714 Display device having electrostatic discharge protection circuit and manufacturing method thereof
05/06/2014US8716711 Thin-film transistor and thin-film diode having amorphous-oxide semiconductor layer
05/06/2014US8716708 Semiconductor device and method for manufacturing the same
05/06/2014US8716704 Organic electroluminescent device and method of fabricating the same
05/06/2014US8716702 Organic light-emitting display device and method of manufacturing the same
05/06/2014US8716700 Organic light-emitting diodes having white light emission
05/06/2014US8716699 Organic light-emitting diodes having white light emission
05/06/2014US8716696 Organic semiconductor thin film transistor and method of fabricating the same
05/06/2014US8716695 Compressive (PFET) and tensile (NFET) channel strain in nanowire FETs fabricated with a replacement gate process
05/06/2014US8716693 Light emitting device and light emitting device package for improving a light emission efficiency
05/06/2014US8716692 Light emitting diode and method for fabricating the same
05/06/2014US8716690 Variable resistor, non-volatile memory device using the same, and methods of fabricating the same
05/06/2014US8716689 Thermal diode device and methods
05/06/2014US8716141 Electrode configurations for semiconductor devices
05/06/2014US8716122 Method of manufacturing semiconductor device having surface protective films on bond pad
05/06/2014US8716121 Ohmic electrode and method of forming the same
05/06/2014US8716119 Methods of forming transistor gates
05/06/2014US8716116 Method of forming a DRAM array of devices with vertically integrated recessed access device and digitline
05/06/2014US8716097 MOS transistors having reduced leakage well-substrate junctions
05/06/2014US8716095 Manufacturing method of gate stack and semiconductor device
05/06/2014US8716088 Scavenging metal stack for a high-K gate dielectric
05/06/2014US8716087 Silicon carbide semiconductor device and method for producing the same
05/06/2014US8716086 Method for manufacturing silicon carbide semiconductor device
05/06/2014US8716084 Memory array with an air gap between memory cells and the formation thereof
05/06/2014US8716081 Capacitor top plate over source/drain to form a 1T memory device
05/06/2014US8716080 Semiconductor device manufacturing method
05/06/2014US8716072 Hybrid CMOS technology with nanowire devices and double gated planar devices
05/06/2014US8716059 Combined conductive plug/conductive line memory arrays and methods of forming the same
05/06/2014US8716050 Oxide microchannel with controllable diameter
05/06/2014US8716049 Growth of group III-V material layers by spatially confined epitaxy
05/06/2014US8716045 Pulsed growth of catalyst-free growth of GaN nanowires and application in group III nitride semiconductor bulk material
05/06/2014US8715839 Electrical components and method of manufacture
05/06/2014US8715836 Surface-treated electro-deposited copper foil and method for manufacturing the same
05/06/2014US8715538 Thermoelectric conversion material and producing method thereof; and thermoelectric conversion element using the same
05/01/2014WO2014066160A2 Memory devices with magnetic random access memory (mram) cells and associated structures for connecting the mram cells
05/01/2014WO2014065985A1 High mobility compound semiconductor material using multiple anions
05/01/2014WO2014065429A1 Semiconductor device, method for producing same, schottky barrier diode, and field-effect transistor
05/01/2014WO2014065343A1 Semiconductor device
05/01/2014WO2014065301A1 Semiconductor device
05/01/2014WO2014065080A1 Semiconductor device and method for manufacturing same
05/01/2014WO2014065049A1 Magnetic-domain-wall-displacement memory cell and initializing method therefor
05/01/2014WO2014065018A1 Semiconductor device manufacturing method
05/01/2014WO2014065015A1 Silicon carbide semiconductor device
05/01/2014WO2014064873A1 Semiconductor device manufacturing method
05/01/2014WO2014064737A1 Accumulation-mode mosfet
05/01/2014WO2014064264A2 Electronic device comprising nanowire(s), provided with a transition metal buffer layer, method for growing at least one nanowire and method for producing a device
05/01/2014WO2014064263A2 Method for growing at least one nanowire from a layer of a transition nitride metal, said layer being obtained in two steps
05/01/2014WO2014063414A1 Array substrate and manufacturing method thereof, and display apparatus
05/01/2014WO2014063404A1 Semiconductor structure and manufacturing method thereof
05/01/2014WO2014063402A1 Method for manufacturing fin field effect transistor
05/01/2014WO2014063397A1 Protection ring structure of high-voltage device and manufacturing method therefor
05/01/2014WO2014063381A1 Method of manufacturing mosfet
05/01/2014WO2014063376A1 Active-matrix flat panel display device, thin-film transistor, and manufacturing method therefor
05/01/2014WO2014063375A1 Thin-film transistor and active-matrix flat panel display device
05/01/2014WO2014063276A1 Semiconductor device for esd protection
05/01/2014WO2012177375A3 Silicon controlled rectifier with stress-enhanced adjustable trigger voltage
05/01/2014US20140120682 Method of manufacturing silicon carbide semiconductor device
05/01/2014US20140120681 Methods of fabricating semiconductor devices having gate structure
05/01/2014US20140120679 Double diffused metal oxide semiconductor device and manufacturing method thereof
05/01/2014US20140120678 Methods for Selective and Conformal Epitaxy of Highly Doped Si-containing Materials for Three Dimensional Structures
05/01/2014US20140120676 Double diffused metal oxide semiconductor device and manufacturing method thereof
05/01/2014US20140120672 Trench mosfet having a top side drain
05/01/2014US20140120671 Semiconductor device and method of manufacturing the same
05/01/2014US20140120670 Trenched power mosfet with enhanced breakdown voltage and fabrication method thereof
05/01/2014US20140120669 Method of manufacturing vertical planar power mosfet and method of manufacturing trench-gate power mosfet
05/01/2014US20140120660 Semiconductor device and method for manufacturing the same
05/01/2014US20140120658 Method of fabricating array substrate
05/01/2014US20140119405 Production-test die temperature measurement
05/01/2014US20140118055 Igbt die structure with auxiliary p well terminal
05/01/2014US20140118034 Methods and circuits for providing stable current and voltage references based on currents flowing through ultra-thin dielectric layer components
05/01/2014US20140117514 Method of fabricating a self-aligning damascene memory structure
05/01/2014US20140117513 Production and Distribution of Dilute Species in Semiconducting Materials
05/01/2014US20140117512 Surface profile for semiconductor region
05/01/2014US20140117511 Passivation Layer and Method of Making a Passivation Layer
05/01/2014US20140117510 Semiconductor Bonding Structure and Process
05/01/2014US20140117509 Metal Deposition with Reduced Stress
05/01/2014US20140117508 Semiconductor unit
05/01/2014US20140117507 Double trench well formation in sram cells
05/01/2014US20140117504 Ephemeral bonding
05/01/2014US20140117503 Ephemeral bonding
05/01/2014US20140117502 Method for processing a semiconductor carrier, a semiconductor chip arrangement and a method for manufacturing a semiconductor device
05/01/2014US20140117501 Differential moscap device
05/01/2014US20140117499 Capacitor and semiconductor device using same
05/01/2014US20140117498 Self-Aligned Silicide Bottom Plate for EDRAM Applications by Self-Diffusing Metal in CVD/ALD Metal Process
05/01/2014US20140117493 Isolation scheme for bipolar transistors in bicmos technology
05/01/2014US20140117492 Semiconductor devices including a recessed active region, and methods of forming semiconductor devices including a recessed active region
05/01/2014US20140117491 Semiconductor structure and fabrication method
05/01/2014US20140117490 Semiconductor device including esd protection device
05/01/2014US20140117487 Schottky barrier diode
05/01/2014US20140117473 Packages and methods for packaging
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