Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
04/2014
04/16/2014CN203553175U Thin film transistor, array substrate and display
04/16/2014CN203553174U Columnsyn metal-oxygen-semiconductor field-effect transistor capable of effectively reducing grid resistance and grid capacitance and manufacturing method thereof
04/16/2014CN203553173U Electronic device
04/16/2014CN203553172U Semiconductor device
04/16/2014CN103733346A Organic thin film transistor
04/16/2014CN103733345A Thin film transistor, method for producing same, display device, image sensor, x-ray sensor, and x-ray digital imaging device
04/16/2014CN103733344A Semiconductor device
04/16/2014CN103733343A Process for high-pressure nitrogen annealing of metal nitrides
04/16/2014CN103733337A Microelectronic device
04/16/2014CN103733319A Method for manufacturing transistor, and transistor
04/16/2014CN103732790A Sputtering target
04/16/2014CN103730518A Semiconductor device with good current conduction capability and high voltage endurance capability and preparation method thereof
04/16/2014CN103730517A Junction field effect transistor and manufacturing method thereof
04/16/2014CN103730516A Nonvolatile semiconductor memory device
04/16/2014CN103730515A Semiconductor device
04/16/2014CN103730514A Thin film transistor
04/16/2014CN103730513A Electronic device, semiconductor device and manufacturing method thereof
04/16/2014CN103730512A Thin film transistor, manufacturing method of thin film transistor and display device
04/16/2014CN103730511A Thin-film transistor, manufacturing method thereof, array substrate and display device
04/16/2014CN103730510A Thin film transistor and manufacturing method thereof, array substrate and display device
04/16/2014CN103730509A Semiconductor device
04/16/2014CN103730508A Vertical thin film transistor structure of display panel and manufacturing method of vertical thin film transistor structure
04/16/2014CN103730507A Double-axis tensile strain GeSnn trench MOSFET
04/16/2014CN103730506A Low-grid charge power device and manufacturing method thereof
04/16/2014CN103730505A I-shaped gate electrode for improved sub-threshold MOSFET performance
04/16/2014CN103730504A Transistor device and method for producing a transistor device
04/16/2014CN103730503A Lateral high-voltage transistor and method for manufacturing the same
04/16/2014CN103730502A Semiconductor device and fabricated method thereof
04/16/2014CN103730501A Dielectrically-terminated superjunction FET
04/16/2014CN103730500A Trench metal oxide semiconductor field effect transistor
04/16/2014CN103730499A Trench MOSFET
04/16/2014CN103730498A Semiconductor device and manufacturing method thereof
04/16/2014CN103730497A Structure of chip scale package power device
04/16/2014CN103730496A Semiconductor structure and manufacturing method thereof
04/16/2014CN103730495A Metal oxide semiconductor device and manufacturing method thereof
04/16/2014CN103730494A Structure of semiconductor power device for chip scale package
04/16/2014CN103730493A Structure of semiconductor power device
04/16/2014CN103730492A MIS-HEMT (metal insulating layer-high electron mobility transistor) device with back field plate structure and preparation method thereof
04/16/2014CN103730491A High electron mobility transistor and method of driving the same
04/16/2014CN103730490A Semiconductor device provided with perpendicular conducting channel and preparation method thereof
04/16/2014CN103730489A Semiconductor device of three-dimensional pier type channel structure and preparation method thereof
04/16/2014CN103730488A Silicon controlled punchthrough structure formed by cutting grooves and method thereof
04/16/2014CN103730487A Controllable silicon table top structure for improving forward direction voltage withstanding and manufacturing technology of controllable silicon table top structure for improving forward direction voltage withstanding
04/16/2014CN103730486A Lateral PNP power transistor
04/16/2014CN103730485A Two-side displaying OLED array substrate, manufacturing method thereof, and display device
04/16/2014CN103730475A Array substrate, manufacturing method thereof and display device
04/16/2014CN103730473A Array substrate, method for manufacturing array substrate and display device
04/16/2014CN103730467A Structure and preparation method of semiconductor power device
04/16/2014CN103730462A ESD self-protection device with LDMOS-SCR structure and high in holding current and robustness
04/16/2014CN103730461A SCR structure with high maintaining voltage and manufacturing method thereof
04/16/2014CN103730458A Silicon controlled rectifier
04/16/2014CN103730417A Semiconductor device and manufacturing method thereof
04/16/2014CN103730413A Manufacturing method of array substrate, array substrate and display device
04/16/2014CN103730405A SOI structure and manufacturing method thereof
04/16/2014CN103730403A Semiconductor structure and forming method thereof
04/16/2014CN103730373A Manufacturing method of semiconductor device and semiconductor device
04/16/2014CN103730370A Method and structure to boost mosfet performance and nbti
04/16/2014CN103730365A Structure of transistor and manufacturing method of transistor
04/16/2014CN103730364A Low-temperature polycrystalline silicon thin film transistor, manufacturing method thereof and display device
04/16/2014CN103730363A Semiconductor structure and manufacturing method thereof
04/16/2014CN103730362A Semiconductor device and manufacturing method thereof
04/16/2014CN103730360A Enhanced HEMT (high electron mobility transistor) device with back field plate structure and preparation method thereof
04/16/2014CN103730357A NPN transistor and forming method
04/16/2014CN103730346A Thin film transistor and manufacturing method thereof, array substrate and display device
04/16/2014CN103730343A Semiconductor device structure and manufacturing method thereof
04/16/2014CN103728827A Photomask, thin film transistor element and method of preparing thin film transistor element
04/16/2014CN102918401B Dynamic sensor
04/16/2014CN102629579B Flexible TFT array substrate and manufacturing method thereof and display device
04/16/2014CN102623491B High-voltage withstanding device in bipolar low-voltage process and manufacturing method thereof
04/16/2014CN102610656B High-voltage-resistance junction field effect transistor
04/16/2014CN102610638B SiC-bipolar junction transistor (SiC-BJT) device for power integrated circuit and manufacturing method of SiC-BJT device
04/16/2014CN102522425B Structure of ultrahigh pressure germanium-silicon heterojunction bipolar transistor (HBT) device and preparation method
04/16/2014CN102522338B Forming method of high-voltage super-junction metal oxide semiconductor field effect transistor (MOSFET) structure and P-shaped drift region
04/16/2014CN102479823B Vertical NROM storage structure and preparation method thereof
04/16/2014CN102479806B Super junction semiconductor device and manufacturing method thereof
04/16/2014CN102437192B N-type silicon-on-insulator transverse double-diffusion field effect transistor
04/16/2014CN102427085B Group III nitride enhancement mode HEMT (High Electron Mobility Transistor) device
04/16/2014CN102412313B MOS (metal oxide semiconductor) variable capacitor adopting SiGe HBT (heterojunction bipolar transistor) process and manufacturing method thereof
04/16/2014CN102403313B Semiconductor element and method for making the same
04/16/2014CN102376775B Parasitic PIN (Personal Identification Number) device in BiCMOS (Bipolar Complementary Metal Oxide Semiconductor) process and manufacturing method thereof
04/16/2014CN102376759B Semiconductor device having both IGBT area and diode area
04/16/2014CN102376756B Polysilicon gate structure
04/16/2014CN102376719B Unit structure of MTP (Multi-Time Programmable) device
04/16/2014CN102368499B TFT array substrate and liquid crystal panel
04/16/2014CN102290432B Display device and manufacturing method of the same
04/16/2014CN102257190B Substrate, substrate provided with thin film, semiconductor device, and method for manufacturing semiconductor device
04/16/2014CN102194748B Semiconductor device and manufacture method thereof
04/16/2014CN102187464B Electrode, semiconductor device, and method for manufacturing the semiconductor device
04/16/2014CN102148259B Thin film transistor, array substrate and manufacturing methods thereof and liquid crystal display
04/16/2014CN102034873B Thin film transistor and method for manufacturing the same
04/16/2014CN101930975B Optimized configurations to integrate steering diodes in low capacitance transient voltage suppressor (tvs)
04/16/2014CN101764143B Magnetoresistive memory cell, memory device having the same, and method of operating the memory device
04/15/2014US8699268 Field effect devices controlled via a nanotube switching element
04/15/2014US8699259 Non-volatile storage system using opposite polarity programming signals for MIM memory cell
04/15/2014US8698323 Microelectronic assembly tolerant to misplacement of microelectronic elements therein
04/15/2014US8698321 Vertically stackable dies having chip identifier structures
04/15/2014US8698318 Superfilled metal contact vias for semiconductor devices
04/15/2014US8698315 Semiconductor device
04/15/2014US8698313 Nonvolatile semiconductor memory apparatus
04/15/2014US8698308 Bump structural designs to minimize package defects
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