Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
05/2014
05/01/2014US20140117470 Backside bulk silicon mems
05/01/2014US20140117469 Tsv-mems combination
05/01/2014US20140117467 Metal-Oxide-Semiconductor Field-Effect Transistor with Spacer over Gate
05/01/2014US20140117466 Replacement gate electrode with multi-thickness conductive metallic nitride layers
05/01/2014US20140117465 Ge-based nmos device and method for fabricating the same
05/01/2014US20140117464 Fin-Last Replacement Metal Gate FinFET
05/01/2014US20140117463 Gate structure and manufacturing method thereof
05/01/2014US20140117462 Bulk finfet with punchthrough stopper region and method of fabrication
05/01/2014US20140117460 Semiconductor device
05/01/2014US20140117459 Memory device
05/01/2014US20140117458 High-voltage transistor having shielding gate
05/01/2014US20140117455 Multigate field effect transistor and process thereof
05/01/2014US20140117454 FinFET with Dummy Gate on Non-Recessed Shallow Trench Isolation (STI)
05/01/2014US20140117452 Semiconductor structures with thinned junctions and methods of manufacture
05/01/2014US20140117451 Semiconductor device
05/01/2014US20140117450 PARTIALLY DEPLETED (PD) SEMICONDUCTOR-ON-INSULATOR (SOI) FIELD EFFECT TRANSISTOR (FET) STRUCTURE WITH A GATE-TO-BODY TUNNEL CURRENT REGION FOR THRESHOLD VOLTAGE (Vt) LOWERING AND METHOD OF FORMING THE STRUCTURE
05/01/2014US20140117448 Thin film transistors and high fill factor pixel circuits and methods for forming same
05/01/2014US20140117447 Dual gate finfet devices
05/01/2014US20140117446 LDMOS Device with Minority Carrier Shunt Region
05/01/2014US20140117445 Power semiconductor device and method for manufacturing the same
05/01/2014US20140117444 Lateral MOSFET
05/01/2014US20140117443 Double diffused metal oxide semiconductor device and manufacturing method thereof
05/01/2014US20140117441 Power device structures and methods
05/01/2014US20140117440 Semiconductor device with impurity region with increased contact area
05/01/2014US20140117439 MOS-Gated Power Devices, Methods, and Integrated Circuits
05/01/2014US20140117438 Semiconductor Device and Method for Manufacturing a Semiconductor Device
05/01/2014US20140117437 Super Junction Semiconductor Device Comprising a Cell Area and an Edge Area
05/01/2014US20140117436 Semiconductor device and method for fabricating the same
05/01/2014US20140117435 Integrating transistors with different poly-silicon heights on the same die
05/01/2014US20140117434 Nonvolatile semiconductor memory device and method for manufacturing same
05/01/2014US20140117433 Nonvolatile semiconductor storage device and method for manufacturing the same
05/01/2014US20140117432 Nonvolatile memory device, method for fabricating the same, and method for operating the same
05/01/2014US20140117431 Nonvolatile semiconductor memory transistor, nonvolatile semiconductor memory, and method for manufacturing nonvolatile semiconductor memory
05/01/2014US20140117426 Semiconductor device and method for fabricating the same
05/01/2014US20140117425 Interlayer dielectric for non-planar transistors
05/01/2014US20140117424 Semiconductor device
05/01/2014US20140117423 Insulative cap for borderless self-aligning contact in semiconductor device
05/01/2014US20140117422 Fin field effect transistors having a nitride containing spacer to reduce lateral growth of epitaxially deposited semiconductor materials
05/01/2014US20140117421 Self-aligned contact structure for replacement metal gate
05/01/2014US20140117420 Semiconductor structure incorporating a contact sidewall spacer with a self-aligned airgap and a method of forming the semiconductor structure
05/01/2014US20140117419 Fin etch and fin replacement for finfet integration
05/01/2014US20140117418 Three-dimensional silicon-based transistor comprising a high-mobility channel formed by non-masked epitaxy
05/01/2014US20140117417 Performance enhancement in transistors by providing a graded embedded strain-inducing semiconductor region with adapted angles with respect to the substrate surface
05/01/2014US20140117416 Semiconductor device and associated method for manufacturing
05/01/2014US20140117414 Semiconductor device having a triple gate transistor and method for manufacturing the same
05/01/2014US20140117412 Heterojunction Transistor and Manufacturing Method Therefor
05/01/2014US20140117410 Semiconductor device
05/01/2014US20140117407 Power semiconductor device and method of manufacturing the same
05/01/2014US20140117406 Reverse blocking mos semiconductor device and manufacturing method thereof
05/01/2014US20140117405 Semiconductor device
05/01/2014US20140117382 Epitaxial Wafer, Method for Fabricating the Wafer, and Semiconductor Device Including the Wafer
05/01/2014US20140117381 Epitaxial Wafer, Method for Fabricating the Same, and Semiconductor Device Including the Same
05/01/2014US20140117380 Flat sic semiconductor substrate
05/01/2014US20140117379 Semiconductor device and method of manufacturing the same
05/01/2014US20140117377 Oxygen-doped gallium nitride single crystal substrate
05/01/2014US20140117376 Nitride Semiconductor Element and Method of Manufacturing the Same
05/01/2014US20140117375 Semiconductor device and method for manufacturing the same
05/01/2014US20140117374 Semiconductor device
05/01/2014US20140117373 Semiconductor device
05/01/2014US20140117371 Array substrate, manufacturing method thereof and display device
05/01/2014US20140117370 Array substrate, display device and manufacturing method thereof
05/01/2014US20140117368 Back-end transistors with highly doped low-temperature contacts
05/01/2014US20140117367 Devices, structures, and methods using self-aligned resistive source extensions
05/01/2014US20140117366 Semiconductor device and method for manufacturing same
05/01/2014US20140117364 Semiconductor Device and Manufacturing Method Thereof
05/01/2014US20140117362 Display panel and method for manufacturing the same
05/01/2014US20140117361 Thin film transistor array panel and manufacturing method thereof
05/01/2014US20140117359 Array substrate and method for manufacturing the same and display device
05/01/2014US20140117358 Electro-optical device, shift register circuit, and semiconductor device
05/01/2014US20140117356 Semiconductor structure for improved oxide fill in
05/01/2014US20140117352 Thin film transistor, method for manufacturing the same, and semiconductor device
05/01/2014US20140117349 Semiconductor device and manufacturing method of semiconductor device using metal oxide
05/01/2014US20140117348 Active-matrix Panel Display Device, TFT and Method for Forming the Same
05/01/2014US20140117347 Thin Film Transistor and Active Matrix Flat Display Device
05/01/2014US20140117323 Organic light emitting diode display, thin film transitor array panel, and method of manufacturing the same
05/01/2014US20140117313 Graphene switching device having tunable barrier
05/01/2014US20140117312 Carbon nanotube devices with unzipped low-resistance contacts
05/01/2014US20140117311 Semiconductor structure having nanocrystalline core and nanocrystalline shell pairing with compositional transition layer
05/01/2014US20140116502 Quantum nanodots, two-dimensional quantum nanodot array as well as semiconductor device using the same and production method therefor
04/2014
04/30/2014EP2725623A1 Semiconductor device
04/30/2014EP2725622A1 Silicon carbide semiconductor element and method for producing same
04/30/2014EP2725621A1 Array substrate and method for manufacturing the same and display device
04/30/2014EP2725620A2 Field effect transistor and related devices
04/30/2014EP2725619A1 Semiconductor device and method of manufacturing same
04/30/2014EP2725615A1 Semiconductor device comprising a diode and method for producing such a device
04/30/2014EP2724378A2 Dmos transistor with cavity below drift region
04/30/2014EP2724377A2 Dmos transistor with a slanted super junction drift structure
04/30/2014EP2724376A1 Integrated circuit comprising a mosfet having ballast resistors and corresponding manufacturing method
04/30/2014EP2724375A1 System and method for providing a carbon nanotube mixer
04/30/2014EP2724374A1 Vertical bipolar transistor having a lateral collector drift region
04/30/2014EP2724373A2 Transistor and its method of manufacture
04/30/2014EP2724363A1 Wet chemistry processes for fabricating a semiconductor device with increased channel mobility
04/30/2014DE112012003382T5 Mikroelektronische Einheit Microelectronic unit
04/30/2014DE112012003282T5 Siliciumcarbidhalbleitervorrichtung und Verfahren zum Herstellen derselben Siliciumcarbidhalbleitervorrichtung and method for manufacturing the same
04/30/2014DE112010002352B4 Verfahren zur Herstellung von FinFET-Strukturen mit verspannungsinduzierenden Source/Drain-biIdenden Abstandshaltern und FinFET-Strukturen Process for the preparation of FinFET structures with stress-inducing source / drain biIdenden spacers and FinFET structures
04/30/2014DE112009005044B4 Halbleitervorrichtung und Verfahren zu deren Herstellung Semiconductor device and process for their preparation
04/30/2014DE10256200B4 Flash-Speicherzelle und Verfahren zur Herstellung dieser, sowie ein Programmier-/Lösch-/Lese-Verfahren in der Flash-Speicherzelle Flash memory cell and method for producing these, and a program / erase / read process in the flash memory cell
04/30/2014DE102013213616A1 Monolithische integrierte Schaltung Monolithic integrated circuit
04/30/2014DE102013211552B3 Method for producing hetero-structure-type transistor e.g. power transistor for use in control device for electromotor in hybrid or electric car, involves connecting hetero-structure comprising carrier layer for dissipating heat
04/30/2014DE102013112012A1 Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung A semiconductor device and method of manufacturing a semiconductor device
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