| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 04/24/2014 | DE102005042048B4 Halbleiterbauteil mit isolierter Steuerelektrode A semiconductor device comprising insulated gate |
| 04/24/2014 | DE10147124B4 Ölgekapselter Drucksensor mit einer Metallmembran, die über ein Druckteil am Gehäuse befestigt ist Ölgekapselter pressure sensor having a metal diaphragm which is secured via a pressing member on the housing |
| 04/23/2014 | EP2722903A1 Strongly correlated oxide field effect element |
| 04/23/2014 | EP2722898A1 Electrode for light emitting diode |
| 04/23/2014 | EP2722893A1 Finfet device with silicided source-drain regions and method of making same using a two step anneal |
| 04/23/2014 | EP2722892A1 Silicon carbide semiconductor device and method for manufacturing same |
| 04/23/2014 | EP2722891A1 A thin film transistor and manufacturing method thereof, an array substrate and a display device |
| 04/23/2014 | EP2722890A1 Schottky diode structure and method of fabrication |
| 04/23/2014 | EP2722889A2 Light emitting diode with improved efficiency though current spreading |
| 04/23/2014 | EP2722874A1 Method for producing amorphous oxide thin film and thin film transistor |
| 04/23/2014 | EP2722870A1 Semiconductor heterostructure and method of fabrication thereof |
| 04/23/2014 | EP2721640A1 Current aperture vertical electron transistors |
| 04/23/2014 | EP2721639A1 Electronic device |
| 04/23/2014 | CN203562431U Fast recovery diode chip of low concentration doping emitter region |
| 04/23/2014 | CN203562430U Insulated gate bipolar translator (IGBT) chip based on N-type injection layers |
| 04/23/2014 | CN203562429U Semiconductor element |
| 04/23/2014 | CN203562419U Triode |
| 04/23/2014 | CN203561812U Array substrate and display device |
| 04/23/2014 | CN103748689A Semiconductor device and method for manufacturing semiconductor device |
| 04/23/2014 | CN103748688A Semiconductor device and method for producing semiconductor device |
| 04/23/2014 | CN103748687A AlGaN/GaN hybrid MOS-HFET |
| 04/23/2014 | CN103748686A A non-volatile memory cell having a high k dielectric and metal gate |
| 04/23/2014 | CN103748685A 绝缘栅双极晶体管 Insulated gate bipolar transistors |
| 04/23/2014 | CN103748684A SIC devices with high blocking voltage terminated by a negative bevel |
| 04/23/2014 | CN103748671A Pattern forming method |
| 04/23/2014 | CN103748667A Glass composition for semiconductor junction protection, process for producing semiconductor device, and semiconductor device |
| 04/23/2014 | CN103748101A Borate esters, boron-comprising dopants, and methods of fabricating boron-comprising dopants |
| 04/23/2014 | CN103746002A Stepped groove-field limiting ring compound terminal structure |
| 04/23/2014 | CN103746001A 显示装置 The display device |
| 04/23/2014 | CN103746000A Polysilicon TFT device and manufacturing method thereof |
| 04/23/2014 | CN103745999A Trench gate power field-effect transistor with insulated buried layer |
| 04/23/2014 | CN103745998A Trench gate power FET (Field Effect Transistor) |
| 04/23/2014 | CN103745997A High-voltage transistor with super-junction structure and production method thereof |
| 04/23/2014 | CN103745996A Lateral power device with partially insulated buried layer and manufacturing method |
| 04/23/2014 | CN103745995A Transverse power device with super junction structure and manufacturing method thereof |
| 04/23/2014 | CN103745994A Field effect transistor by adoption of graphene and preparation method thereof |
| 04/23/2014 | CN103745993A Super-junction-based AlGaN/GaN MIS-HEMT (Metal-Insulator-Semiconductor High-Electron-Mobility Transistor) high-voltage device and fabrication method thereof |
| 04/23/2014 | CN103745992A Composite drain-based AlGaN/GaN MIS-HEMT (Metal-Insulator-Semiconductor High-Electron-Mobility Transistor) high-voltage device and fabrication method thereof |
| 04/23/2014 | CN103745991A Super-junction-based AlGaN/GaN high-voltage device and fabrication method thereof |
| 04/23/2014 | CN103745990A Depletion algan/gan mishemt high voltage device and manufacturing method thereof |
| 04/23/2014 | CN103745989A HEMT (High Electron Mobility Transistor) |
| 04/23/2014 | CN103745988A Isolation structure of high-voltage driving circuit |
| 04/23/2014 | CN103745987A Field limiting ring-negative bevel angle compound terminal structure |
| 04/23/2014 | CN103745979A Current sensor, inverter circuit, and semiconductor device having the same |
| 04/23/2014 | CN103745977A OTP (One Time Programmable) device structure and processing method thereof |
| 04/23/2014 | CN103745955A Display device, array substrate and manufacturing method of array substrate |
| 04/23/2014 | CN103745930A Method for saving area of medium- and low-voltage VDMOSFET chip |
| 04/23/2014 | CN103745928A Preparation method of transistor with stressed channel and transistor with stressed channel |
| 04/23/2014 | CN103745927A Manufacturing method of static induction transistor and static induction transistor |
| 04/23/2014 | CN102569418B Schottky barrier transistor possessing carbonic insulating layer and manufacturing method thereof |
| 04/23/2014 | CN102569382B Metallic-oxide semiconductor element and forming method thereof |
| 04/23/2014 | CN102487085B Semiconductor device and manufacture method thereof |
| 04/23/2014 | CN102472678B Semiconductor pressure sensor, pressure sensor device, electronic apparatus, and method for manufacturing semiconductor pressure sensor |
| 04/23/2014 | CN102414805B Diode |
| 04/23/2014 | CN102365720B Structure and method for forming a salicide on the gate electrode of a trench-gate fet |
| 04/23/2014 | CN102339851B Power semiconductor with polysilicon structure at bottom of trench and method for manufacturing same |
| 04/23/2014 | CN102226999B 衬底结构及其制作方法 Substrate structure and manufacturing method thereof |
| 04/23/2014 | CN102214692B High voltage semiconductor transistor and method of manufacturing same |
| 04/23/2014 | CN102104047B Nonvolatile semiconductor memory device and method for producing the same |
| 04/23/2014 | CN101794818B 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof |
| 04/23/2014 | CN101740622B Trench shielding structure for semiconductor device and method |
| 04/22/2014 | US8705212 Magnetic element with enhanced coupling portion |
| 04/22/2014 | US8704736 Light emitting device, method of driving a light emitting device, element substrate, and electronic equipment |
| 04/22/2014 | US8704551 Semiconductor device and a display device |
| 04/22/2014 | US8704531 Loop element and noise analyzer |
| 04/22/2014 | US8704385 Semiconductor device having pad region for wire-bonding and method of manufacturing the semiconductor device |
| 04/22/2014 | US8704381 Very extremely thin semiconductor package |
| 04/22/2014 | US8704380 Methods for wafer-level packaging of microfeature devices and microfeature devices formed using such methods |
| 04/22/2014 | US8704375 Barrier structures and methods for through substrate vias |
| 04/22/2014 | US8704368 Stackable via package and method |
| 04/22/2014 | US8704366 Ultra thin bumped wafer with under-film |
| 04/22/2014 | US8704364 Reducing stress in multi-die integrated circuit structures |
| 04/22/2014 | US8704355 Semiconductor device comprising through-electrode interconnect |
| 04/22/2014 | US8704350 Stacked wafer level package and method of manufacturing the same |
| 04/22/2014 | US8704340 Stacked single crystal compound semiconductor substrates |
| 04/22/2014 | US8704339 Semiconductor device |
| 04/22/2014 | US8704335 Spacer formation in the fabrication of planar bipolar transistors |
| 04/22/2014 | US8704333 Fuse chambers on a substrate |
| 04/22/2014 | US8704332 Metal oxide semiconductor field effect transistor (MOSFET) gate termination |
| 04/22/2014 | US8704331 MEMS integrated chip with cross-area interconnection |
| 04/22/2014 | US8704329 SOI devices for plasma display panel driver chip |
| 04/22/2014 | US8704321 Solid-state imaging device |
| 04/22/2014 | US8704320 Strain induced reduction of switching current in spin-transfer torque switching devices |
| 04/22/2014 | US8704319 Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories |
| 04/22/2014 | US8704317 Microstructure device with an improved anchor |
| 04/22/2014 | US8704316 Etchant-free methods of producing a gap between two layers, and devices produced thereby |
| 04/22/2014 | US8704315 CMOS integrated micromechanical resonators and methods for fabricating the same |
| 04/22/2014 | US8704314 Mechanical memory transistor |
| 04/22/2014 | US8704313 Low capacitance, low on resistance ESD diode |
| 04/22/2014 | US8704311 Semiconductor device having epitaxial semiconductor layer above impurity layer |
| 04/22/2014 | US8704310 Trench isolation structure |
| 04/22/2014 | US8704309 Display panel and method of manufacturing the same |
| 04/22/2014 | US8704307 Device for electrostatic discharge protection comprising triple-diffused drain structure |
| 04/22/2014 | US8704305 Thin film transistor |
| 04/22/2014 | US8704304 Semiconductor structure |
| 04/22/2014 | US8704303 Dual channel trench LDMOS transistors and transistors integrated therewith |
| 04/22/2014 | US8704302 Power semiconductor devices and methods |
| 04/22/2014 | US8704301 Devices, methods, and systems with MOS-gated trench-to-trench lateral current flow |
| 04/22/2014 | US8704300 Semiconductor device and fabricating method thereof |
| 04/22/2014 | US8704298 MOS diode with termination structure and method for manufacturing the same |