Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
04/2014
04/24/2014WO2014059950A1 Enhanced switch device
04/24/2014WO2014059733A1 Semiconductor structure having beryllium oxide
04/24/2014WO2014059728A1 Semiconductor device and manufacturing method therefor
04/24/2014WO2014059686A1 Method for manufacturing finfet fin structure
04/24/2014WO2014059563A1 Semiconductor device and manufacturing method thereof
04/24/2014WO2012148573A3 A high endurance non-volatile memory cell and array
04/24/2014US20140113687 Semiconductor device and manufacturing method thereof
04/24/2014US20140113443 Fabricating method of a semiconductor device
04/24/2014US20140113442 Dual gate process
04/24/2014US20140113440 Laser irradiation method and laser irradiation device and method of manufacturing semiconductor device
04/24/2014US20140113426 Transistor and method of forming the transistor so as to have reduced base resistance
04/24/2014US20140113424 Source/Drain Stressor Having Enhanced Carrier Mobility and Method for Manufacturing Same
04/24/2014US20140113423 Methods for manufacturing a semiconductor device
04/24/2014US20140113422 Semiconductor device with pocket regions and method of manufacturing the same
04/24/2014US20140113421 Silicon carbide semiconductor apparatus and method of manufacturing same
04/24/2014US20140113416 Dielectric for carbon-based nano-devices
04/24/2014US20140113408 Semiconductor device and manufacturing method thereof
04/24/2014US20140113407 Semiconductor element and method for manufacturing the same
04/24/2014US20140113406 Method for manufacturing semiconductor device
04/24/2014US20140113405 Method for forming multilayer film including oxide semiconductor film and method for manufacturing semiconductor device
04/24/2014US20140111892 Bi-directional bipolar junction transistor for high voltage electrostatic discharge protection
04/24/2014US20140111890 Bi-directional bipolar junction transistor for high voltage electrostatic discharge protection
04/24/2014US20140111270 Semiconductor device, method for manufacturing the semiconductor device, and method for controlling the semiconductor device
04/24/2014US20140110857 Reduction chemistry for etching
04/24/2014US20140110826 Backside protection for a wafer-level chip scale package (wlcsp)
04/24/2014US20140110825 Compound Semiconductor Lateral PNP Bipolar Transistors
04/24/2014US20140110823 Contact structure
04/24/2014US20140110821 Folded conical inductor
04/24/2014US20140110818 Random access memory device and manufacturing method for nodes thereof
04/24/2014US20140110817 Sub-lithographic semiconductor structures with non-constant pitch
04/24/2014US20140110815 High Voltage Diode
04/24/2014US20140110814 Resurf High Voltage Diode
04/24/2014US20140110802 Memory Devices with Magnetic Random Access Memory (MRAM) Cells and Associated Structures for connecting the MRAM Cells
04/24/2014US20140110801 Packaging for semiconductor sensor devices and methods
04/24/2014US20140110798 Methods of forming a semiconductor device with low-k spacers and the resulting device
04/24/2014US20140110797 Semiconductor device and method for manufacturing semiconductor device
04/24/2014US20140110795 Semiconductor device and method of manufacturing the same
04/24/2014US20140110794 Facilitating gate height uniformity and inter-layer dielectric protection
04/24/2014US20140110792 Pfet polysilicon layer with n-type end cap for electrical shunt
04/24/2014US20140110788 Power Converter Package Including Top-Drain Configured Power FET
04/24/2014US20140110786 Semiconductor device having buried channel array
04/24/2014US20140110785 Replacement metal gate finfet
04/24/2014US20140110784 Replacement metal gate finfet
04/24/2014US20140110782 Source Tip Optimization For High Voltage Transistor Devices
04/24/2014US20140110780 Insulated gate type semiconductor device and method for fabricating the same
04/24/2014US20140110779 Vertical power mosfet
04/24/2014US20140110778 Semiconductor device and manufacturing method thereof
04/24/2014US20140110777 Trench gate metal oxide semiconductor field effect transistor and fabricating method thereof
04/24/2014US20140110775 Three-dimensional flash memory using fringing effect and method for manufacturing
04/24/2014US20140110774 Semiconductor device and method of manufacturing the same
04/24/2014US20140110773 Semiconductor device including line-type active region and method for manufacturing the same
04/24/2014US20140110770 Saddle type mos device
04/24/2014US20140110769 Semiconductor device and fabrication method thereof
04/24/2014US20140110768 Transistor device
04/24/2014US20140110767 Bulk finfet well contacts with fin pattern uniformity
04/24/2014US20140110766 Semiconductor structure and manufacturing method thereof
04/24/2014US20140110765 Field effect transistor having phase transition material incorporated into one or more components for reduced leakage current
04/24/2014US20140110764 Method to control amorphous oxide layer formation at interfaces of thin film stacks for memory and logic components
04/24/2014US20140110763 Nano resonance apparatus and method
04/24/2014US20140110761 Monolithic HBT with Wide-Tuning Range Varactor
04/24/2014US20140110760 Semiconductor device
04/24/2014US20140110759 Semiconductor device
04/24/2014US20140110758 Semiconductor device and method for producing same
04/24/2014US20140110757 Fabricating method of semiconductor device and semiconductor device fabricated using the same method
04/24/2014US20140110756 Semiconductor devices and methods for manufacturing the same
04/24/2014US20140110755 Apparatus and Method for Forming Semiconductor Contacts
04/24/2014US20140110754 Epitaxy Technique for Growing Semiconductor Compounds
04/24/2014US20140110753 Methods of Making JFET Devices with Pin Gate Stacks
04/24/2014US20140110752 Power Module and Method of Manufacturing the Power Module
04/24/2014US20140110751 Thyristor and method for the same
04/24/2014US20140110723 Semiconductor element and method of manufacturing thereof
04/24/2014US20140110722 Semiconductor Structure or Device Integrated with Diamond
04/24/2014US20140110721 Second Schottky Contact Metal Layer to Improve GaN Schottky Diode Performance
04/24/2014US20140110719 Array substrate, manufacturing method therefor and display device
04/24/2014US20140110718 Thin film transistor, array substrate, and manufacturing method thereof
04/24/2014US20140110717 Structure including gallium nitride substrate and method of manufacturing the gallium nitride substrate
04/24/2014US20140110716 Thin Film Transistor and Manufacturing Method Thereof, an Array Substrate and a Display Device
04/24/2014US20140110714 High mobility compound semiconductor material using multiple anions
04/24/2014US20140110709 Semiconductor device and method for manufacturing the same
04/24/2014US20140110708 Semiconductor device and method for manufacturing the same
04/24/2014US20140110707 Semiconductor device and method for manufacturing the same
04/24/2014US20140110706 Semiconductor device
04/24/2014US20140110705 Semiconductor device and method for manufacturing the same
04/24/2014US20140110704 Semiconductor device
04/24/2014US20140110703 Semiconductor device
04/24/2014US20140110702 Oxide Thin Film Transistor And Method For Manufacturing The Same, Array Substrate, And Display Apparatus
04/24/2014US20140110700 Thin film transistor structure and method for manufacturing the same
04/24/2014US20140110687 Novel condensed polycyclic compound
04/24/2014US20140110670 Doped graphene structure comprising hydrophobic organic material, method for preparing the same, and transparent electrode, display device and solar cell comprising the electrode
04/24/2014US20140110669 Non-planar quantum well device having interfacial layer and method of forming same
04/24/2014US20140110668 Planar electronic semiconductor device
04/24/2014US20140110662 Graphene-based composite structure and method for making the same
04/24/2014US20140110660 Nonvolatile memory cell without a dielectric antifuse having high- and low-impedance states
04/24/2014DE112006002377B4 Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung A semiconductor device and method of manufacturing a semiconductor device
04/24/2014DE112005001488B4 Tri-Gate Bauelement mit hoher Beweglichkeit und dessen Herstellungsverfahren Tri-gate device with high mobility and its manufacturing method
04/24/2014DE10315176B4 Überspannungsschutzschaltung An overvoltage protection circuit
04/24/2014DE102013221370A1 Halbleitervorrichtung und Verfahren zu deren Herstellung Semiconductor device and process for their preparation
04/24/2014DE102013110903A1 Druckerfassungsvorrichtung und Herstellungsverfahren derselben The pressure sensing device and manufacturing method thereof
04/24/2014DE102012020785A1 Erhöhung der Dotierungseffizienz bei Protonenbestrahlung Increasing the doping efficiency of proton irradiation
04/24/2014DE102010028978B4 Halbleitervorrichtung Semiconductor device
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