Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
04/2014
04/30/2014DE102013112009A1 Superjunction-Halbleitervorrichtung mit einem Zellengebiet und einem Randgebiet Superjunction semiconductor device having a cell region and a peripheral area
04/30/2014DE102013111792A1 Verfahren zum verarbeiten eines halbleiterträgers, halbleiterchipanordnung und verfahren zum herstellen eines halbleiterbauelements A method for processing a semi-conductor carrier, semiconductor chip assembly and method of manufacturing a semiconductor device
04/30/2014DE102013111548A1 Halbleitervorrichtung und Verfahren zum Herstellen derselben A semiconductor device and method of manufacturing the same
04/30/2014DE102013104268A1 Integrierte Schaltkreisstrukturen, die Basiswiderstandsabstimmungsbereiche aufweisen, und Verfahren zum Ausbilden derselben Integrated circuit structures having base resistance voting regions, and method of forming same
04/30/2014DE102012219769A1 Verfahren zum Herstellen einer elektrischen Durchkontaktierung in einem Substrat sowie Substrat mit einer elektrischen Durchkontaktierung A method of making an electrical plated-through hole in a substrate as well as substrate to an electrical through-contact
04/30/2014DE102012219712A1 Leuchtmodul mit optimierter Kontaktierung Light module with optimized bonding
04/30/2014DE102012219704A1 Leuchtmodul mit optimierter Lichtabgabe Light module with optimized light output
04/30/2014DE102008030853B4 Dreidimensionaler Transistor mit einer Doppelkanal-Konfiguration Three-dimensional transistor having a double channel configuration
04/30/2014DE102007057728B4 Verfahren zur Herstellung eines Halbleiterbauelements mit einer Kurzschlusstruktur A process for producing a semiconductor device with a Kurzschlusstruktur
04/30/2014CN203573987U SMD diode
04/30/2014CN203573956U Transistor
04/30/2014CN103765776A Semiconductor device
04/30/2014CN103765598A Edge termination structure employing recesses for edge termination elements
04/30/2014CN103765597A TFT (Thin Film Transistor), manufacturing method thereof, array substrate, display device and barrier layer
04/30/2014CN103765596A Thin-film transistor
04/30/2014CN103765595A Semiconductor device structures including vertical transistor devices, arrays of vertical transistor devices, and methods of fabrication
04/30/2014CN103765594A Silicon carbide semiconductor device
04/30/2014CN103765593A Ga2o3 semiconductor element
04/30/2014CN103765592A Method for growing III-V epitaxial layers
04/30/2014CN103765582A 半导体装置 Semiconductor device
04/30/2014CN103765565A Semiconductor device
04/30/2014CN103765561A Method for cleaning metal gate semiconductor
04/30/2014CN103765494A Display device and method for manufacturing same
04/30/2014CN103765307A Active matrix display device
04/30/2014CN103762247A Thin film transistor, manufacturing method for thin film transistor, array substrate and organic light-emitting display panel
04/30/2014CN103762246A Thin film transistor field-effect transistor and manufacturing method thereof
04/30/2014CN103762245A Thin film transistor, array substrate, manufacturing method and display device of thin film transistor and manufacturing method and display device of array substrate
04/30/2014CN103762244A Thin film transistor, manufacturing method of thin film transistor, thin film transistor array substrate and liquid crystal panel
04/30/2014CN103762243A Superjunction structures for power devices and methods of manufacture
04/30/2014CN103762242A Compressive strain GeSn p-channel MOSFET
04/30/2014CN103762241A Pectinate gate longitudinal channel SOI LDMOS unit
04/30/2014CN103762240A LDMOS device and manufacturing method thereof
04/30/2014CN103762239A Radio-frequency power LDMOS device and manufacturing method thereof
04/30/2014CN103762238A Radio-frequency power LDMOS device with field plate and preparation method thereof
04/30/2014CN103762237A Transverse power device with field plate structure
04/30/2014CN103762236A Integrated circuit device and method of manufacturing same
04/30/2014CN103762235A AlGaN/GaN high-voltage device based on super junction leakage field plate and manufacturing method thereof
04/30/2014CN103762234A AlGaN/GaN MISHEMT high-voltage device based on super junction leakage field plate and manufacturing method thereof
04/30/2014CN103762233A Novel HEMT for improving piezoelectric polarization intensity
04/30/2014CN103762232A High-voltage transistor with insulation buried layer
04/30/2014CN103762231A Low-power dissipation IGBT device and peripheral circuit thereof
04/30/2014CN103762230A N-channel injection efficiency reinforced insulated gate bipolar transistor
04/30/2014CN103762229A Transverse power device with composite grid media
04/30/2014CN103762228A Transverse power device with composite metal grid electrode structure
04/30/2014CN103762227A Oxide thin film, transistor with same and preparation method of transistor
04/30/2014CN103762218A Array substrate, manufacturing method thereof and display device
04/30/2014CN103762215A Aluminum gate CMOS phase inverter and CMOS semiconductor device strengthened through radiation resistance
04/30/2014CN103762178A LTPS TFT and manufacturing method thereof
04/30/2014CN103762177A Reduction of proximity effects in field-effect transistors with embedded silicon-germanium source and drain regions
04/30/2014CN103762174A Preparation method for thin-film transistor
04/30/2014CN103762171A Manufacturing method of polysilicon thin film
04/30/2014CN103762170A Manufacturing method of bridged-grain polysilicon thin film
04/30/2014CN103762169A Bottom gate thin film transistor and manufacturing method thereof
04/30/2014CN103762168A Manufacture method of bottom gate thin film transistor
04/30/2014CN103762167A Bridged-grain polysilicon thin film transistor and manufacturing method thereof
04/30/2014CN103762166A Manufacturing method of precisely-aligned bridged-grain polysilicon thin film transistor
04/30/2014CN103762165A Simplified manufacturing method of bridged-grain polysilicon thin film transistor
04/30/2014CN103762162A Double-end-controllable groove type insulated gate bipolar transistor and preparation method thereof
04/30/2014CN103762156A Manufacturing method of semiconductor substrate, semiconductor substrate and high-voltage transistor
04/30/2014CN102792168B Mems传感器 Mems Sensor
04/30/2014CN102623495B Tunneling field effect transistor with multi-doping pocket structure and manufacturing method for tunneling field effect transistor
04/30/2014CN102522424B CMOS device capable of reducing charge sharing effect and manufacturing method thereof
04/30/2014CN102437157B Preparation method of CMOS (complementary metal oxide semiconductor) device capable of implementing multistage working voltage by single-thickness gate oxide layer
04/30/2014CN102437117B Novel process for integrating silicide and metal foredielectric and forming structure thereof
04/30/2014CN102087972B Flash memory device having a curved upper surface
04/30/2014CN102034712B Method for forming shield gate channel field-effect transistor with three-mask and device therefor
04/30/2014CN101794770B Display device and manufacturing method thereof
04/30/2014CN101789451B Semiconductor device and method for manufacturing the same
04/30/2014CN101728276B Method for manufacturing semiconductor device
04/30/2014CN101714528B Semiconductor device and manufacturing method thereof
04/30/2014CN101640220B Semiconductor device and manufacturing method thereof
04/29/2014US8711875 Aggregating completion messages in a sideband interface
04/29/2014US8711607 Semiconductor device
04/29/2014US8711074 Flat panel display
04/29/2014US8710683 Method of forming wafer level mold using glass fiber and wafer structure formed by the same
04/29/2014US8710680 Electronic device package and fabrication method thereof
04/29/2014US8710679 Electrode structure and its manufacturing method, and semiconductor module
04/29/2014US8710675 Integrated circuit package system with bonding lands
04/29/2014US8710674 Internal wiring structure of semiconductor device
04/29/2014US8710673 Wiring structure in a semiconductor device, method of forming the wiring structure, semiconductor device including the wiring structure and method of manufacturing the semiconductor device
04/29/2014US8710664 Wafer-level chip scale package
04/29/2014US8710654 Semiconductor device and manufacturing method thereof
04/29/2014US8710651 Semiconductor device and method for manufacturing the same
04/29/2014US8710641 Combination for composite layered chip package
04/29/2014US8710633 Semiconductor overlapped PN structure and manufacturing method thereof
04/29/2014US8710630 Mechanisms for marking the orientation of a sawed die
04/29/2014US8710628 Switchable memory diodes based on ferroelectric/conjugated polymer heterostructures and/or their composites
04/29/2014US8710627 Uni-directional transient voltage suppressor (TVS)
04/29/2014US8710625 Devices including composite thermal capacitors
04/29/2014US8710624 Semiconductor device
04/29/2014US8710621 Bipolar transistor with diffused layer between deep trench sidewall and collector diffused layer
04/29/2014US8710617 Semiconductor device element formed on SOI substrate comprising a hollow region, and having capacitors in an electric field alleviation region
04/29/2014US8710616 Die seal ring
04/29/2014US8710605 Magnetic memory and method of manufacturing the same
04/29/2014US8710604 Magnetoresistive element and manufacturing method of the same
04/29/2014US8710603 Engineered magnetic layer with improved perpendicular anisotropy using glassing agents for spintronic applications
04/29/2014US8710601 MEMS structure and method for making the same
04/29/2014US8710600 Semiconductor pressure sensor
04/29/2014US8710599 Micromachined devices and fabricating the same
04/29/2014US8710598 High-density 3-dimensional structure
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