Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2014
06/26/2014US20140175529 Nonvolatile memory device and method for fabricating the same
06/26/2014US20140175527 Semiconductor structure and process thereof
06/26/2014US20140175526 Semiconductor device for current control and method thereof
06/26/2014US20140175523 Method of Manufacturing a Sensor Device Having a Porous Thin-Film Metal Electrode
06/26/2014US20140175520 METAL SILICIDE SELF-ALIGNED SiGe HETEROJUNCTION BIPOLAR TRANSISTOR AND METHOD OF FORMING THE SAME
06/26/2014US20140175519 Method and layer structure for preventing intermixing of semiconductor layers
06/26/2014US20140175518 Iii-v hemt devices
06/26/2014US20140175517 Field effect transistor
06/26/2014US20140175516 Two-dimensional electron gas sensor and methods for making and using the sensor
06/26/2014US20140175515 Nonplanar iii-n transistors with compositionally graded semiconductor channels
06/26/2014US20140175514 Ring-shaped transistors providing reduced self-heating
06/26/2014US20140175513 Structure And Method For Integrated Devices On Different Substartes With Interfacial Engineering
06/26/2014US20140175512 Defect Transferred and Lattice Mismatched Epitaxial Film
06/26/2014US20140175509 Lattice Mismatched Hetero-Epitaxial Film
06/26/2014US20140175508 Semiconductor device with schottky barrier diode
06/26/2014US20140175507 Semiconductor device
06/26/2014US20140175461 Sic epitaxial wafer and method for manufacturing same
06/26/2014US20140175460 Semiconductor devices with minimized current flow differences and methods of same
06/26/2014US20140175459 Silicon carbide semiconductor device and method for manufacturing the same
06/26/2014US20140175458 Graphene structure, graphene device including same, and method of manufacturing graphene structure
06/26/2014US20140175457 Sic-based trench-type schottky device
06/26/2014US20140175456 Nitride semiconductor device
06/26/2014US20140175455 Field-effect transistor
06/26/2014US20140175453 Semiconductor device, method for manufacturing the same, power supply, and high-frequency amplifier
06/26/2014US20140175451 Normally off gallium nitride field effect transistors (fet)
06/26/2014US20140175450 Vertical gan power device with breakdown voltage control
06/26/2014US20140175444 Semiconductor Device and Manufacturing Method Thereof
06/26/2014US20140175438 Oxide semiconductor film and semiconductor device
06/26/2014US20140175437 Oxide Semiconductor Device and Surface Treatment Method of Oxide Semiconductor
06/26/2014US20140175435 Semiconductor device and method for manufacturing the same
06/26/2014US20140175434 Thin film transistor, array substrate and display apparatus
06/26/2014US20140175431 Semiconductor device
06/26/2014US20140175427 Thin film transistor
06/26/2014US20140175426 Thin film transistor
06/26/2014US20140175425 Thin film transistor
06/26/2014US20140175396 Thin film transistor substrate, organic light-emitting apparatus including the same, method of manufacturing the thin film transistor substrate, and method of manufacturing the organic light-emitting apparatus
06/26/2014US20140175381 Tunneling transistor
06/26/2014US20140175379 Epitaxial film on nanoscale structure
06/26/2014US20140175376 Reduced Scale Resonant Tunneling Field Effect Transistor
06/26/2014DE112012004134T5 Anpassung von Schwellenspannungen für Thin-Body-Mosfets Adjustment of threshold voltages for thin-body MOSFETs
06/26/2014DE112012001220T5 Lokale, zu einer Gate-Struktur selbstjustierte Zwischenverbindungsstruktur Local, self-aligned to a gate structure interconnect structure
06/26/2014DE112012001089T5 Erhalten von Vorteilen einer Verspannung bei einem UV-Härten bei der Fertigung von Ersatz-Gate-Transistoren Obtaining advantages of a strain with a UV-hardening in the production of replacement gate transistors
06/26/2014DE102013222052A1 Halbleitervorrichtung und Verfahren zum Herstellen derselben A semiconductor device and method of manufacturing the same
06/26/2014DE102013114410A1 Halbleiterbauelement und verfahren zur herstellung eines halbleiterbauelements A semiconductor device and method of manufacturing a semiconductor device
06/26/2014DE102013103115A1 Vertikaler bipolarer Sperrschichttransistor für Speicher mit hoher Dichte Vertical bipolar junction transistor for high density memories
06/26/2014DE102012223833A1 Bidirektional sperrender Halbleiterschalter und zugehörige Leistungsschaltstufe in einem Fahrzeug Bi-directional blocking semiconductor switch and associated power switching stage in a vehicle
06/26/2014DE102012025429A1 Verfahren zur Dotierung von Halbleitersubstraten sowie dotiertes Halbleitersubstrat Method for doping semiconductor substrates and doped semiconductor substrate
06/26/2014DE10042590B4 Glas zum anodischen Verbinden Glass anodic bonding
06/25/2014EP2747147A2 Systems and methods for OHMIC contacts in silicon carbide devices
06/25/2014EP2747146A1 Semiconductor device and method for manufacturing semiconductor device
06/25/2014EP2747145A2 Field-effect transistor
06/25/2014EP2747144A1 Gate leakage of GaN HEMTs and GaN diodes
06/25/2014EP2747143A1 GaN HEMTs and GaN diodes
06/25/2014EP2747142A1 Insulated gate bipolar transistor and method of manufacturing the same
06/25/2014EP2747141A1 Thin film transisitor and manufacturing method thereof, array substrate, and display device
06/25/2014EP2747140A1 Method for producing at least one silicon nanoelement in a silicon oxide wafer, method for manufacturing a device using said production method
06/25/2014EP2747138A1 Thin film transistor array substrate
06/25/2014EP2747135A1 Cascode circuit integration of group iii-n and group devices
06/25/2014EP2747128A1 Method for manufacturing silicon carbide semiconductor device
06/25/2014EP2746799A1 Semiconductor magnetic field sensors
06/25/2014EP2745330A1 Photovoltaic device
06/25/2014EP2745326A1 Vertical field effect transistor on oxide semiconductor substrate and method of manufacturing the same
06/25/2014CN203674217U 一种晶闸管芯片 Thyristor chips
06/25/2014CN203674196U 一种晶闸管 Thyristor
06/25/2014CN103891314A 声音产生器、声音产生装置以及电子设备 A sound generator, a sound generating device and an electronic device
06/25/2014CN103890955A 半导体器件 Semiconductor devices
06/25/2014CN103890954A 半导体装置以及制造半导体装置的方法 A semiconductor device and a method of manufacturing a semiconductor device
06/25/2014CN103890953A 半导体元件 Semiconductor components
06/25/2014CN103890952A 碳化硅半导体器件及其制造方法 The silicon carbide semiconductor device and its manufacturing method
06/25/2014CN103890951A 用于制造半导体器件的方法和半导体器件 The method of manufacturing a semiconductor device and a semiconductor device is used
06/25/2014CN103890935A 树脂封装型半导体装置及其制造方法 A resin sealing type semiconductor device and its manufacturing method
06/25/2014CN103890923A 半导体器件 Semiconductor devices
06/25/2014CN103890922A 制造半导体器件的方法 The method of manufacturing a semiconductor device
06/25/2014CN103890921A 制造碳化硅半导体器件的方法 The method of manufacturing a silicon carbide semiconductor device
06/25/2014CN103890920A 半导体装置以及半导体装置的制造方法 The method of manufacturing a semiconductor device and a semiconductor device
06/25/2014CN103890919A 半导体接合保护用玻璃复合物、半导体装置的制造方法以及半导体装置 Bonding a semiconductor protective glass composite, a method of manufacturing a semiconductor device and a semiconductor device
06/25/2014CN103890908A 固相键合晶片的支承基板的剥离方法及半导体装置的制造方法 The method of manufacturing the solid-phase method for stripping the bonded wafer and the supporting substrate of a semiconductor device
06/25/2014CN103889889A 功能性材料的制造方法和电子部件 The method of manufacturing the electronic component and the functional material
06/25/2014CN103887346A 一种肖特基二极管及其制造方法 One kind of the Schottky diode and the manufacturing method
06/25/2014CN103887345A 一种氧化物薄膜晶体管及其制造方法 An oxide thin film transistor and manufacturing method thereof
06/25/2014CN103887344A Igzo薄膜晶体管及改善igzo薄膜晶体管电学性能的方法 Igzo thin film transistor and method for improving the electrical properties of the thin film transistor igzo
06/25/2014CN103887343A 薄膜晶体管及其制作方法、阵列基板和显示装置 Thin film transistor and manufacturing method, the array substrate and display device
06/25/2014CN103887342A 沟槽mosfet及其制作方法 Trench mosfet and its production methods
06/25/2014CN103887341A 一种场效应晶体管的制备方法 Preparation method of a field effect transistor,
06/25/2014CN103887340A 用于FinFET的N金属 N-metal for FinFET
06/25/2014CN103887339A 一种晶体管、晶体管的散热结构以及晶体管的生产方法 Method for producing a transistor, a heat dissipation structure of the transistor and the transistor of
06/25/2014CN103887338A 一种适用于深槽超结器件的结终端及其制备方法 One for ultra-deep trench junction terminal junction device and its preparation method
06/25/2014CN103887337A 半导体结构及其制作工艺 Semiconductor structure and fabrication process
06/25/2014CN103887336A 半导体结构及其制造方法 The semiconductor structure and a method of manufacturing
06/25/2014CN103887335A 一种提升频率特性的赝配高电子迁移率晶体管及制作方法 A way to improve the frequency characteristics of the pseudomorphic high electron mobility transistor and manufacturing method
06/25/2014CN103887334A GaN高电子迁移率晶体管和GaN二极管 GaN high electron mobility transistors and GaN diode
06/25/2014CN103887333A 一种具有异质结结构的双极型功率半导体器件 A power semiconductor device having a bipolar heterojunction structure
06/25/2014CN103887332A 一种新型功率半导体器件 A novel power semiconductor device
06/25/2014CN103887331A 高压igbt器件的vld终端及其制备方法 Vld high-voltage terminal and its preparation method igbt devices
06/25/2014CN103887330A 一种基于发射极电极接触方式的抗辐照双极器件及该双极器件的制备方法 A method of preparing an emitter electrode contact method based anti-radiation bipolar device and the bipolar device
06/25/2014CN103887329A 一种集成门极换流晶闸管igct深门极结构 An integrated gate commutated thyristor gate structure deep igct
06/25/2014CN103887328A 薄膜晶体管阵列基板、液晶显示装置及制造方法 Apparatus and a method of manufacturing a thin film transistor array substrate, a liquid crystal display
06/25/2014CN103887327A 一种半导体装置终端可靠性加固技术 A semiconductor device reliability reinforcement technology terminal
06/25/2014CN103887326A 高电阻低位错GaN薄膜及制备方法 High resistance and low dislocation GaN film preparation
06/25/2014CN103887325A 一种提高器件耐压能力的半导体装置及其制备方法 A breakdown voltage semiconductor device and its ability to improve the preparation method
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