Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
12/1996
12/17/1996US5585660 Extended drain resurf lateral DMOS devices
12/17/1996US5585659 Complementary metal-insulator-semiconductor devices
12/17/1996US5585658 Semiconductor device having diffusion regions formed with an ion beam absorber pattern
12/17/1996US5585656 High coupling ratio of flash memory
12/17/1996US5585655 Field-effect transistor and method of manufacturing the same
12/17/1996US5585649 Compound semiconductor devices and methods of making compound semiconductor devices
12/17/1996US5585600 Encapsulated semiconductor chip module and method of forming the same
12/17/1996US5585310 Methods of mass production of semiconductor devices
12/17/1996US5585308 Method for improved pre-metal planarization
12/17/1996US5585307 Forming a semi-recessed metal for better EM and Planarization using a silo mask
12/17/1996US5585306 Methods for producing compound semiconductor devices
12/17/1996US5585305 Method for fabricating a semiconductor device
12/17/1996US5585304 Method of making semiconductor device with multiple transparent layers
12/17/1996US5585303 Method for manufacturing a stacked/trench DRAM capacitor
12/17/1996US5585302 Formation of polysilicon resistors in the tungsten strapped source/drain/gate process
12/17/1996US5585301 Method for forming high resistance resistors for limiting cathode current in field emission displays
12/17/1996US5585300 Method of making conductive amorphous-nitride barrier layer for high-dielectric-constant material electrodes
12/17/1996US5585299 Coating with oxide then polysilicon layer; masking; etching
12/17/1996US5585296 Method of fabricating memory cells with buried bit lines
12/17/1996US5585295 Method for forming inverse-T gate lightly-doped drain (ITLDD) device
12/17/1996US5585294 Method of fabricating lateral double diffused MOS (LDMOS) transistors
12/17/1996US5585293 Fabrication process for a 1-transistor EEPROM memory device capable of low-voltage operation
12/17/1996US5585292 Method of fabricating a thin film transistor
12/17/1996US5585291 Low temperature heat crystallization an amorphous silicon semiconductor
12/17/1996US5585290 Forming gate bus-line pattern by anodic oxidation
12/17/1996US5585289 Method of producing metal semiconductor field effect transistor
12/17/1996US5585288 Digital MMIC/analog MMIC structures and process
12/17/1996US5585287 Method of forming integrated current-limiter device for power MOS transistors
12/17/1996US5585286 Implantation of a semiconductor substrate with controlled amount of noble gas ions to reduce channeling and/or diffusion of a boron dopant subsequently implanted into the substrate to form P- LDD region of a PMOS device
12/17/1996US5585285 Method of forming dynamic random access memory circuitry using SOI and isolation trenches
12/17/1996US5585284 Method of manufacturing a SOI DRAM
12/17/1996US5585282 Process for forming a raised portion on a projecting contact for electrical testing of a semiconductor
12/17/1996US5585281 Process and apparatus for forming and testing semiconductor package leads
12/17/1996US5585222 Resist composition and process for forming resist pattern
12/17/1996US5585220 Resist composition with radiation sensitive acid generator
12/17/1996US5585219 Resist composition and process for forming resist pattern
12/17/1996US5585210 Mask pattern of a semiconductor device and a method of manufacturing fine patterns using the same
12/17/1996US5585195 Metal insert and rough-surface treatment method thereof
12/17/1996US5585162 Ground plane routing
12/17/1996US5585148 Process for forming a deposited film using a light transmissive perforated diffusion plate
12/17/1996US5585016 Laser patterned C-V dot
12/17/1996US5585012 Self-cleaning polymer-free top electrode for parallel electrode etch operation
12/17/1996US5584974 Applying direct current voltage between target and anode in plasma chamber, cyclically sensing voltage, interrupting voltage
12/17/1996US5584973 Restricts sputtering directions of sputtered particles from target
12/17/1996US5584964 Multilayer; overcoating with glass caused to flow by heat treatment
12/17/1996US5584963 Reaction chamber having reactive gas introducing means and vacuum evacuation pipe, also means for introducing anhydrous hydrogen fluoride gas, interhalogen compound gas, carrier gas connected to chamber and/or pipe
12/17/1996US5584938 Electrostatic particle removal and characterization
12/17/1996US5584936 Susceptor for semiconductor wafer processing
12/17/1996US5584933 Process for plasma deposition and plasma CVD apparatus
12/17/1996US5584930 Method for measuring the diameter of a single crystal ingot
12/17/1996US5584751 Wafer polishing apparatus
12/17/1996US5584750 Polishing machine with detachable surface plate
12/17/1996US5584717 For carrying an ic package
12/17/1996US5584647 Object handling devices
12/17/1996US5584401 Substrate-supporting side boards and a cassette utilizing the boards
12/17/1996US5584395 High speed sorting apparatus for semiconductor device equipped with rotatable sorting drum
12/17/1996US5584310 Semiconductor processing with non-jetting fluid stream discharge array
12/17/1996CA2104071C Device and method for accurate etching and removal of thin film
12/12/1996WO1996039795A1 Multiple probing of an auxiliary test pad which allows for reliable bonding to a primary bonding pad
12/12/1996WO1996039718A1 Semiconductor device and method of production thereof
12/12/1996WO1996039717A1 Reduced leakage antifuse structure and fabrication method
12/12/1996WO1996039714A1 Method for reducing a transient thermal mismatch
12/12/1996WO1996039713A1 A method of forming high pressure silicon oxynitride (oxynitride) gate dielectrics for metal oxide semiconductor (mos) devices with p+ polycrystalline silicon (polysilicon) gate electrodes
12/12/1996WO1996039712A1 Silicon on insulator achieved using electrochemical etching
12/12/1996WO1996039711A1 Wafer cushions for wafer shipper
12/12/1996WO1996039710A2 Method for etching photolithographically produced quartz crystal blanks for singulation
12/12/1996WO1996039651A1 System and method for on-site mixing of ultra-high-purity chemicals for semiconductor processing
12/12/1996WO1996039548A1 Process for plasma enhanced anneal of titanium nitride
12/12/1996WO1996039469A1 Cyanacrylate adhesive
12/12/1996WO1996039408A1 TRICYCLIC 5,6-DIHYDRO-9H-PYRAZOLO[3,4-c]-1,2,4-TRIAZOLO[4,3-α]PYRIDINES
12/12/1996WO1996039358A1 Point-of-use ammonia purification for electronic component manufacture
12/12/1996WO1996039298A1 Method for the reduction of lateral shrinkage in multilayer circuit boards on a support
12/12/1996WO1996039266A1 On-site generation of ultra-high-purity buffered-hf for semiconductor processing
12/12/1996WO1996039265A1 On-site ammonia purification for semiconductor manufacture
12/12/1996WO1996039264A1 On-site manufacture of ultra-high-purity hydrochloric acid for semiconductor processing
12/12/1996WO1996039263A1 On-site manufacture of ultra-high-purity nitric acid for semiconductor processing
12/12/1996WO1996039237A1 On-site generation of ultra-high-purity buffered hf for semiconductor processing
12/12/1996WO1996030940A3 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE WITH BiCMOS CIRCUIT
12/12/1996WO1996028880A3 Transponder for electronic identification system
12/12/1996DE4345236C2 Semiconductor structure and its prepn.
12/12/1996DE19622971A1 Semiconductor device for SMT and mfg. method
12/12/1996DE19621434A1 Generation of triangular or tetrahedral mesh for finite difference analysis
12/12/1996DE19620549A1 Rated melt point programmable by laser beam e.g. for monolithic i.c. storage device
12/12/1996DE19615179A1 Minoritätsträger-Halbleiterbauelemente mit verbesserter Stabilität Minority carrier semiconductor devices with improved stability
12/12/1996DE19605633A1 Diode mfr. by inclined etching and double diffusion
12/12/1996CA2222227A1 Process for plasma enhanced anneal of titanium nitride
12/12/1996CA2196307A1 Reduced leakage antifuse structure and fabrication method
12/11/1996EP0748151A1 Method of metal-plating electrode portions of printed-wiring board
12/11/1996EP0748150A2 Precision fluid head transport
12/11/1996EP0748052A1 Continuous address structure with folding
12/11/1996EP0748051A2 System and method for dynamically reconfiguring a programmable gate array
12/11/1996EP0747968A1 Structure and process for reducing the on-resistance of MOS-gated power devices
12/11/1996EP0747967A2 Vertical trench gate MOS device and a method of fabricating the same
12/11/1996EP0747965A1 Low-noise and power AlGaPSb/GaInAs HEMTs and pseudomorphic HEMTs on GaAs substrate
12/11/1996EP0747964A2 Fully self-aligned submicron heterojunction bipolar transistor and method of fabricating the same
12/11/1996EP0747963A1 AlPSb/InP single heterojunction bipolar transistor on InP substrate for high-speed, high-power applications
12/11/1996EP0747961A2 Zero-power SRAM with patterned buried oxide isolation
12/11/1996EP0747960A2 Memory masking for periphery salicidation of active regions
12/11/1996EP0747959A2 Precision capacitor ladder using differential equal-perimeter pairs
12/11/1996EP0747958A2 Vertically stacked switched-emitter devices
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