Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
12/1996
12/04/1996EP0745704A2 Process for preparing an epitaxially coated semiconducting wafer
12/04/1996EP0745633A2 Si containing high molecular compound and photosensitive resin composition
12/04/1996EP0745275A1 Diode device to protect metal-oxide-metal capacitors
12/04/1996EP0745274A1 Process for producing a three-dimensional circuit
12/04/1996EP0745273A1 Circuit arrangement, and junction field effect transistor suitable for use in such a circuit arrangement
12/04/1996EP0745272A1 High-voltage cmos transistors for a standard cmos process
12/04/1996EP0745271A1 Process for producing a diffusion region adjacent to a recess in a substrate
12/04/1996EP0745270A1 Compliant electrically connective bumps for an adhesive flip chip integrated circuit device and methods for forming same
12/04/1996EP0745235A1 Photomask blanks
12/04/1996EP0745211A1 Grating-grating interferometric alignment system
12/04/1996EP0745147A1 Method and apparatus for coating a substrate
12/04/1996EP0745015A1 Multi-wavelength laser optic system for probe station and laser cutting
12/04/1996EP0666481B1 Analog voltage output circuit
12/04/1996EP0478576B1 Perfluoropolymer coated pellicles
12/04/1996CN1137331A Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
12/04/1996CN1137329A Method for fabricating self-assembling microstructures
12/04/1996CN1137324A Anisotropic, electrically conductive adhesive film
12/04/1996CN1137296A Apparatus for heating or cooling wafers
12/04/1996CN1137176A Surface mounting type light emitting diode
12/04/1996CN1137175A Semiconductor integrated circuit apparatus and making method thereof
12/04/1996CN1137174A Method for analyzing defects in semiconductor device
12/04/1996CN1137173A Wire bonding method, semiconductor device, capillary for wire bonding and ball bump forming method
12/04/1996CN1137171A 激光退火方法 Laser annealing method
12/04/1996CN1137170A Method of manufacturing semiconductor device
12/04/1996CN1137169A Ultra-small semiconductor devices and methods of fabricating and contacting
12/03/1996USRE35385 Method for fixing an electronic component and its contacts to a support
12/03/1996US5581590 SOR exposure system and method of manufacturing semiconductor devices using same
12/03/1996US5581571 Semiconductor devices and methods
12/03/1996US5581563 Design for testability technique of CMOS and BICMOS ICS
12/03/1996US5581510 Method of testing flash memory
12/03/1996US5581503 Data line disturbance free memory block divided flash memory and microcomputer having flash memory therein
12/03/1996US5581475 Method for interactively tailoring topography of integrated circuit layout in accordance with electromigration model-based minimum width metal and contact/via rules
12/03/1996US5581455 Capacitive charge pump, BiCMOS circuit for low supply voltage and method therefor
12/03/1996US5581444 Device and method for enhancing thermal and high frequency performance of integrated circuit packages
12/03/1996US5581436 High-dielectric-constant material electrodes comprising thin platinum layers
12/03/1996US5581385 Single crystal silicon arrayed devices for projection displays
12/03/1996US5581205 Semiconductor device capable of assembling adjacent sub chips into one chip
12/03/1996US5581202 Semiconductor integrated circuit device and production method thereof
12/03/1996US5581199 Interconnect architecture for field programmable gate array using variable length conductors
12/03/1996US5581195 Semiconductor chip holding device
12/03/1996US5581194 Method and apparatus for passive optical characterization of semiconductor substrates subjected to high energy (MEV) ion implantation using high-injection surface photovoltage
12/03/1996US5581177 Shaping ATE bursts, particularly in gallium arsenide
12/03/1996US5581176 Analog autonomous test bus framework for testing integrated circuits on a printed circuit board
12/03/1996US5581125 Interconnect for semiconductor devices and method for fabricating same
12/03/1996US5581124 Semiconductor device having wiring and contact structure
12/03/1996US5581118 Electronic surface mount device
12/03/1996US5581117 Monocrystalline silicon substrate coated with intermediate layer of zinc telluride or zinc-rich cadmium-zinc-telluride and upper layer of cadmium telluride or cadmium-rich cadmium-zinc-telluride; defect-free crystal structure
12/03/1996US5581116 Semiconductor device manufactured by selectively controlling growth of an epitaxial layer without a mask
12/03/1996US5581115 Bipolar transistors using isolated selective doping to improve performance characteristics
12/03/1996US5581114 Self-aligned polysilicon base contact in a bipolar junction transistor
12/03/1996US5581112 For an integrated circuit
12/03/1996US5581110 Integrated circuit with trenches and an oxygen barrier layer
12/03/1996US5581109 Semiconductor device
12/03/1996US5581107 Nonvolatile semiconductor memory that eases the dielectric strength requirements
12/03/1996US5581106 Semiconductor memory cell having information storage transistor and switching transistor
12/03/1996US5581104 Semiconductor integrated circuit
12/03/1996US5581103 Semiconductor integrated circuit device with input-protecting circuit
12/03/1996US5581102 Transistor and method for manufacturing the same
12/03/1996US5581101 FET and/or bipolar devices formed in thin vertical silicon on insulator (SOI) structures
12/03/1996US5581093 Contact structure of an interconnection layer for a semiconductor device and a multilayer interconnection SRAM
12/03/1996US5581092 Gate insulated semiconductor device
12/03/1996US5580912 Polysilane compositions
12/03/1996US5580847 Low-surface tension, storage stable solution also comprising a fluoroalkylsulfonamide having a carboxy or ether(s) group and hydrogen peroxide; cleaning semiconductor surfaces for high-density integrated circuits
12/03/1996US5580846 Surface treating agents and treating process for semiconductors
12/03/1996US5580831 Sawcut method of forming alignment marks on two faces of a substrate
12/03/1996US5580828 Covering non-heated specimen in passivation solution containing iodine to reduce surface recombination velocity of specimen during measurement
12/03/1996US5580826 Process for forming a planarized interlayer insulating film in a semiconductor device using a periodic resist pattern
12/03/1996US5580825 Process for making multilevel interconnections of electronic components
12/03/1996US5580824 Method for fabrication of interconnections in semiconductor devices
12/03/1996US5580823 Process for fabricating a collimated metal layer and contact structure in a semiconductor device
12/03/1996US5580821 Semiconductor processing method of forming an electrically conductive contact plug
12/03/1996US5580816 Local oxidation process for high field threshold applications
12/03/1996US5580815 Process for forming field isolation and a structure over a semiconductor substrate
12/03/1996US5580813 Method of forming a semiconductor memory device having a contact region between memory cell and an interlayer insolating layer
12/03/1996US5580812 Semiconductor device have a belt cover film
12/03/1996US5580811 Method for the fabrication of a semiconductor memory device having a capacitor
12/03/1996US5580810 Method of making a semiconductor memory device
12/03/1996US5580809 Method of making a mask ROM using tunnel current detection to store data
12/03/1996US5580808 Method of manufacturing a ROM device having contact holes treated with hydrogen atoms and energy beam
12/03/1996US5580807 Method of fabricating a high voltage MOS transistor for flash EEPROM applications having a uni-sided lightly doped grain
12/03/1996US5580806 Method of fabricating a buried contact structure for SRAM
12/03/1996US5580805 Semiconductor device having various threshold voltages and manufacturing same
12/03/1996US5580804 Method for fabricating true LDD devices in a MOS technology
12/03/1996US5580803 Production method for ion-implanted MESFET having self-aligned lightly doped drain structure and T-type gate
12/03/1996US5580802 Silicon-on-insulator gate-all-around mosfet fabrication methods
12/03/1996US5580801 Method for processing a thin film using an energy beam
12/03/1996US5580800 Method of patterning aluminum containing group IIIb Element
12/03/1996US5580798 Method of fabricating bipolar transistor having a guard ring
12/03/1996US5580797 Method of making SOI Transistor
12/03/1996US5580796 Method for fabricating thin film transistor matrix device
12/03/1996US5580792 Low temperature annealing to crystalize amorphous silicon semiconductor coated with catalyst, etching to partially remove catalyst, forming gate insulating and gate electrode layers for thin film transistor
12/03/1996US5580700 Pre-purifying, demetallizing the ion exchange resin by washing with water, mineral acid second
12/03/1996US5580697 Reacting a solid substrate with a photosensitive nitrenogenic compound, e.g. a tetrafluorophenyl azide; photolithography
12/03/1996US5580694 Acrylic acid, acrylic ester copolymer, radiation sensitive acid generator
12/03/1996US5580687 Contact stepper printed lithography method
12/03/1996US5580668 Aluminum-palladium alloy for initiation of electroless plating
12/03/1996US5580663 Rare earth ion doped mixture comprising silicon and silicon dioxide; room temperature luminescence
12/03/1996US5580615 Method of forming a conductive film on an insulating region of a substrate
12/03/1996US5580607 Controlling vaporization rate of solvent by controlling a temperature distribution of surface of object to form film of uniform thickness
12/03/1996US5580511 Method of forming thick film pattern and material for forming thick film pattern