| Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
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| 05/28/1997 | CN1150843A Method of cleaning probe tips of probe cards and apparatus for impelementing method |
| 05/28/1997 | CN1150695A Method for manufacturing non-volatile memory cell |
| 05/28/1997 | CN1150660A Control device of position and slope of target |
| 05/28/1997 | CN1150648A Foreign matter checking method and device |
| 05/27/1997 | US5634194 High density, three-dimensional, intercoupled circuit structure |
| 05/27/1997 | US5633822 Method of programming a nonvolatile flash-EEPROM memory array using source line switching transistors |
| 05/27/1997 | US5633821 Nonvolatile memory device |
| 05/27/1997 | US5633807 System and method for generating mask layouts |
| 05/27/1997 | US5633806 Semiconductor integrated circuit and method of designing same |
| 05/27/1997 | US5633781 Isolated sidewall capacitor having a compound plate electrode |
| 05/27/1997 | US5633747 Variable spot-size scanning apparatus |
| 05/27/1997 | US5633738 TFT substrate having scanning lines of metal films of columnar crystal grains |
| 05/27/1997 | US5633721 Surface position detection apparatus |
| 05/27/1997 | US5633720 Stage movement control apparatus and method therefor and projection exposure apparatus and method therefor |
| 05/27/1997 | US5633713 Method and system for evaluating distribution of absorption light amount in optical lithography |
| 05/27/1997 | US5633698 Exposure apparatus |
| 05/27/1997 | US5633599 Semiconductor integrated circuit with a test circuit for input buffer threshold |
| 05/27/1997 | US5633536 Press contact type semiconductor device |
| 05/27/1997 | US5633535 Spacing control in electronic device assemblies |
| 05/27/1997 | US5633534 Integrated circuit with enhanced planarization |
| 05/27/1997 | US5633531 Metal alloy housing; thermoconductivity, workability, corrosion resistance |
| 05/27/1997 | US5633529 Resin sealing type semiconductor device and method of making the same |
| 05/27/1997 | US5633525 Lateral field effect transistor |
| 05/27/1997 | US5633524 Gate array semiconductor integrated circuit device |
| 05/27/1997 | US5633523 Complementary mis semiconductor device of dual gate structure having a silicide layer including a thinned portion |
| 05/27/1997 | US5633522 CMOS transistor with two-layer inverse-T tungsten gate |
| 05/27/1997 | US5633521 Enhancement of breakdown voltage in MOSFET semiconductor device |
| 05/27/1997 | US5633520 Neuron MOSFET with different interpolysilicon oxide |
| 05/27/1997 | US5633519 Non-volatile floating gate semiconductor device |
| 05/27/1997 | US5633518 In an integrated circuit |
| 05/27/1997 | US5633517 Semiconductor device constituting multi-stage power amplifier |
| 05/27/1997 | US5633516 Lattice-mismatched crystal structures and semiconductor device using the same |
| 05/27/1997 | US5633515 Semiconductor component arrangement for overvoltage protection of MOSFETs and IGBTS |
| 05/27/1997 | US5633507 Electron beam lithography system with low brightness |
| 05/27/1997 | US5633506 Method and apparatus for in situ removal of contaminants from ion beam neutralization and implantation apparatuses |
| 05/27/1997 | US5633505 Semiconductor wafer incorporating marks for inspecting first layer overlay shift in global alignment process |
| 05/27/1997 | US5633469 Bonding load measuring device |
| 05/27/1997 | US5633455 Method of detecting particles of semiconductor wafers |
| 05/27/1997 | US5633212 Pyrogenic wet thermal oxidation of semiconductor wafers |
| 05/27/1997 | US5633211 Semiconductor device and process |
| 05/27/1997 | US5633210 Forming on semiconductor substrate having kerf a blanket layer having an aperture, forming a buffer layer, forming a photoresist layer, patterning |
| 05/27/1997 | US5633209 Method of forming a circuit membrane with a polysilicon film |
| 05/27/1997 | US5633208 Forming insulation film having lowered surface wettability on uneven surface, coating hydrophilic hardenable solution on insulation, hardening, etching back to planarize |
| 05/27/1997 | US5633207 Method of forming a wiring layer for a semiconductor device |
| 05/27/1997 | US5633206 Forming lead frame, placing layer of polyamic acid film on backing, thermally compressing to form polyimide film |
| 05/27/1997 | US5633204 Method and apparatus for forming bump structure used for flip-chip mounting, the bump structure and the flip-chip |
| 05/27/1997 | US5633202 High tensile nitride layer |
| 05/27/1997 | US5633201 Reducing contact resistance and maintaining control for the heights of the plugs |
| 05/27/1997 | US5633200 Process for manufacturing a large grain tungsten nitride film and process for manufacturing a lightly nitrided titanium salicide diffusion barrier with a large grain tungsten nitride cover layer |
| 05/27/1997 | US5633199 Process for fabricating a metallized interconnect structure in a semiconductor device |
| 05/27/1997 | US5633198 Method of forming wiring with gaps in bend to improve electromigration resistance |
| 05/27/1997 | US5633197 Metallization to improve electromigration resistance by etching concavo-concave opening |
| 05/27/1997 | US5633196 Forming active region on substrate, forming dielectric layer having opening exposing portion of active region, forming silicide landing pad, forming second dielectric layer, forming conductive layer |
| 05/27/1997 | US5633195 Depositing metallic film having columnar morphology and textured surface, heating to melt |
| 05/27/1997 | US5633194 Cleaning; applying vacuum; heating; growing thin epitaxial film |
| 05/27/1997 | US5633193 Patterning semiconductor surface, growing phosphorus-containing groups 3-5 material on surface, heating, exposing to phosphorus flux |
| 05/27/1997 | US5633192 Method for epitaxially growing gallium nitride layers |
| 05/27/1997 | US5633191 Process for minimizing encroachment effect of field isolation structure |
| 05/27/1997 | US5633190 Semiconductor device and method for making the same |
| 05/27/1997 | US5633188 Method of manufacturing a semiconductor memory device having a capacitor |
| 05/27/1997 | US5633187 Process for fabricating read-only memory cells |
| 05/27/1997 | US5633186 Process for fabricating a non-volatile memory cell in a semiconductor device |
| 05/27/1997 | US5633185 Method of making a non-volatile memory cell |
| 05/27/1997 | US5633184 Method of making semiconductor device with floating bate |
| 05/27/1997 | US5633183 FET having minimized parasitic gate capacitance |
| 05/27/1997 | US5633182 Method of manufacturing an image display device with reduced cell gap variation |
| 05/27/1997 | US5633181 Fabrication method of semiconductor integrated circuit device having capacitors, bipolar transistors and igfets |
| 05/27/1997 | US5633180 Method of forming P-type islands over P-type buried layer |
| 05/27/1997 | US5633179 Method of forming silicon/silicon-germanium heterojunction bipolar transistor |
| 05/27/1997 | US5633178 Method of making volatile memory cell with interface charge traps |
| 05/27/1997 | US5633177 Method for producing a semiconductor gate conductor having an impurity migration barrier |
| 05/27/1997 | US5633174 Type silicon material with enhanced surface mobility |
| 05/27/1997 | US5633173 Method for detecting wafer defects |
| 05/27/1997 | US5633172 Method for analying an impurity on a semiconductor substrate |
| 05/27/1997 | US5633112 Photosensitive resin composition containing a carboxylic acid polymer, photoacid generator and secondary or tertiary aliphatic amine |
| 05/27/1997 | US5633111 Photoresist composition and article containing 1,2-quinonediazide and an organic phosphorous acid compound |
| 05/27/1997 | US5633103 Photolithography, patterning integrated circuits |
| 05/27/1997 | US5633101 Mask and projection exposure method |
| 05/27/1997 | US5633073 Heating until eutectic forms between conductive connector and metal layer to form an electrical connection |
| 05/27/1997 | US5633036 Heating silicon substrate having silicon dioxide regions, forming nuclei from silicon source gas, converting to titanium silicide, etching to remove, growing layer of silicide on silicon from titanium and silicon source gases |
| 05/27/1997 | US5632957 Molecular biological diagnostic systems including electrodes |
| 05/27/1997 | US5632910 Multilayer resist pattern forming method |
| 05/27/1997 | US5632873 Two piece anti-stick clamp ring |
| 05/27/1997 | US5632866 Purification |
| 05/27/1997 | US5632855 Thermal oxide etch technique |
| 05/27/1997 | US5632847 Injecting ozone into acid aqueous solution to form bubbles, contacting film with bubbles |
| 05/27/1997 | US5632821 Post treatment method for in-situ cleaning |
| 05/27/1997 | US5632820 Thermal treatment furnace in a system for manufacturing semiconductors |
| 05/27/1997 | US5632812 Diamond electronic device and process for producing the same |
| 05/27/1997 | US5632811 Method of retaining melt of oxide |
| 05/27/1997 | US5632667 No coat backside wafer grinding process |
| 05/27/1997 | US5632631 Microelectronic contacts with asperities and methods of making same |
| 05/27/1997 | US5632617 Curing apparatus |
| 05/27/1997 | US5632438 Using aqueous cleaning solution containing citric and oxalic acid based additives |
| 05/27/1997 | US5632437 Method of centering a lid seal clip |
| 05/27/1997 | US5632374 Compact disc transfer station |
| 05/27/1997 | CA2108868C Printed circuit board with electric elements mounted thereon |
| 05/22/1997 | WO1997018588A1 Improved charge pumps using accumulation capacitors |
| 05/22/1997 | WO1997018587A1 Semiconductor interlayer staggered contact structure |
| 05/22/1997 | WO1997018585A1 Tri-layer pre-metal interlayer dielectric compatible with advanced cmos technologies |