| Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
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| 07/01/1997 | US5643809 Method for making high speed poly-emitter bipolar transistor |
| 07/01/1997 | US5643808 Process of manufacturing a semiconductor device |
| 07/01/1997 | US5643807 Selectively etching gate recess with fluorine compound which automatically forms etch stop layer of aluminum fluoride with aluminum in semiconductor compund, eliminating etch stop layer, non-selectively etching to complete |
| 07/01/1997 | US5643806 Manufacturing method for making bipolar device |
| 07/01/1997 | US5643805 Process for producing a bipolar device |
| 07/01/1997 | US5643804 Forming thin films and passivation layer on substrate, cutting substrate into separate chips, then heat treatament |
| 07/01/1997 | US5643803 Production method of a semiconductor dynamic sensor |
| 07/01/1997 | US5643802 Method of producing a semiconductor device by gang bonding followed by point bonding |
| 07/01/1997 | US5643801 Laser processing method and alignment |
| 07/01/1997 | US5643700 Photoresist composition and method of exposing photoresist |
| 07/01/1997 | US5643698 Mask for manufacturing semiconductor device and method of manufacture thereof |
| 07/01/1997 | US5643654 Pellicle structure and process for preparation thereof with dissolution of coating layer |
| 07/01/1997 | US5643642 Polymeric metal oxide materials and their formation and use |
| 07/01/1997 | US5643632 Tungsten chemical vapor deposition process for suppression of volcano formation |
| 07/01/1997 | US5643483 Ceramic heater made of fused silica glass having roughened surface |
| 07/01/1997 | US5643473 Dry etching method |
| 07/01/1997 | US5643472 Selective removal of material by irradiation |
| 07/01/1997 | US5643433 Photoresists patterns formed by electrodeposition |
| 07/01/1997 | US5643422 Reactive sputtering system for depositing titanium nitride without formation of titanium nitride on titanium target and process of depositing titanium nitride layer |
| 07/01/1997 | US5643407 Solving the poison via problem by adding N2 plasma treatment after via etching |
| 07/01/1997 | US5643406 Chemical-mechanical polishing (CMP) method for controlling polishing rate using ionized water, and CMP apparatus |
| 07/01/1997 | US5643405 Both sides |
| 07/01/1997 | US5643394 Plasma reactor having gas distribution apparatus including disk surrounded by annular member with gap therebetween comprising elongate thin slit nozzle, spacers between disk and annular so gap is of equal width over circumference |
| 07/01/1997 | US5643368 Silicon semiconductors, liquid crystal displays |
| 07/01/1997 | US5643366 Wafer handling within a vacuum chamber using vacuum |
| 07/01/1997 | US5643364 Plasma chamber with fixed RF matching |
| 07/01/1997 | US5643056 Revolving drum polishing apparatus |
| 07/01/1997 | US5643053 Chemical mechanical polishing apparatus with improved polishing control |
| 07/01/1997 | US5643046 Polishing method and apparatus for detecting a polishing end point of a semiconductor wafer |
| 07/01/1997 | US5642978 Device for handling disk-shaped objects in a handling plane of a local clean room |
| 07/01/1997 | US5642813 For shipping semiconductor wafers |
| 07/01/1997 | US5642779 Plate shaped diamond substrate, fins; for radiation of semiconductor devices |
| 06/26/1997 | WO1997023002A1 Integrated circuit devices and methods employing amorphous silicon carbide resistor materials |
| 06/26/1997 | WO1997023000A1 SEMICONDUCTOR FIELD EFFECT DEVICE COMPRISING A SiGe LAYER |
| 06/26/1997 | WO1997022999A1 Hot carrier transistors and their manufacture |
| 06/26/1997 | WO1997022995A1 Semiconductor device containing two or more metallic wiring layers and method for manufacturing the same |
| 06/26/1997 | WO1997022994A1 Method and device for electronic parts mounting and dispenser used therefor |
| 06/26/1997 | WO1997022993A1 Electronic package with spacer means |
| 06/26/1997 | WO1997022992A1 Method of forming dielectric films with reduced metal contamination |
| 06/26/1997 | WO1997022990A1 Secure semiconductor device |
| 06/26/1997 | WO1997022989A1 Process for single mask c4 solder bump fabrication |
| 06/26/1997 | WO1997022893A2 Methods and compositions for producing microlenses and optical filters |
| 06/26/1997 | WO1997022858A1 Multiple field of view calibration plate for use in semiconductor manufacturing |
| 06/26/1997 | WO1997022733A1 Electroless deposition of metal films with spray processor |
| 06/26/1997 | WO1997022731A1 Conformal pure and doped aluminum coatings and a methodology and apparatus for their preparation |
| 06/26/1997 | WO1997022653A1 Germanosiloxane materials and optical components comprising the same |
| 06/26/1997 | WO1997022419A1 USE OF PALLADIUM IMMERSION DEPOSITION TO SELECTIVELY INITIATE ELECTROLESS PLATING ON Ti AND W ALLOYS FOR WAFER FABRICATION |
| 06/26/1997 | DE19653499A1 Solder application method for solder bump manufacture in e.g. ball grid array |
| 06/26/1997 | DE19650493A1 Super self-aligned bipolar transistor with heterojunction |
| 06/26/1997 | DE19643903A1 Bipolar transistor with heterojunction manufacturing method |
| 06/26/1997 | DE19548058A1 MOS-Transistor und Verfahren zu dessen Herstellung MOS transistor and method of producing the |
| 06/26/1997 | DE19548046A1 Verfahren zur Herstellung von für eine Flip-Chip-Montage geeigneten Kontakten von elektrischen Bauelementen A method for preparing suitable for a flip-chip mounting contacts of electrical components |
| 06/26/1997 | CA2238490A1 Use of palladium immersion deposition to selectively initiate electroless plating on ti and w alloys for wafer fabrication |
| 06/25/1997 | EP0781079A1 Method of fabricating electronic circuit |
| 06/25/1997 | EP0780912A1 Magnetoresistance element, magnetoresistive head and magnetoresistive memory |
| 06/25/1997 | EP0780910A1 High voltage silicon diode with optimum placement of silicon-germanium layers |
| 06/25/1997 | EP0780909A2 Array with amorphous silicon TFTs |
| 06/25/1997 | EP0780908A1 A diffused channel insulated gate field effect transistor |
| 06/25/1997 | EP0780907A2 Semiconductor device having shallow impurity region without short-circuit between gate electrode and source and drain regions and process of fabrication thereof |
| 06/25/1997 | EP0780906A2 High electron mobility transistor comprising an InAs/InGaAs superlattice |
| 06/25/1997 | EP0780905A1 Isolated gate bipolar transistor |
| 06/25/1997 | EP0780904A2 Article with array of light active units |
| 06/25/1997 | EP0780902A1 Nonvolatile semiconductor memory and method for fabricating the same |
| 06/25/1997 | EP0780901A2 DRAM cell array layout |
| 06/25/1997 | EP0780900A1 Monolithic semiconductor device having an edge structure and method for producing said structure |
| 06/25/1997 | EP0780896A2 Improvements in or relating to electronic packages |
| 06/25/1997 | EP0780895A2 Method of producing a trench capacitor DRAM cell |
| 06/25/1997 | EP0780894A2 Method of forming submicron contacts and vias in an integrated circuit |
| 06/25/1997 | EP0780893A2 Semiconductor device and method of manufacturing the same |
| 06/25/1997 | EP0780892A2 Method of manufacturing an inverted thin film transistor |
| 06/25/1997 | EP0780891A1 Method of manufacturing semiconductor device |
| 06/25/1997 | EP0780890A1 Support for electrochemical deposition |
| 06/25/1997 | EP0780889A2 Method for selective depositing of refractory metal silicide on silicon and silicon wafer metallized by this process |
| 06/25/1997 | EP0780888A2 Method of manufacturing a gate electrode for a MOS structure |
| 06/25/1997 | EP0780887A1 Method of N-type doping a compound semiconductor layer |
| 06/25/1997 | EP0780886A1 Improvements in or relating to semiconductor processing |
| 06/25/1997 | EP0780885A2 Apparatus and method for cooling a substrate |
| 06/25/1997 | EP0780879A2 Electron beam exposure apparatus |
| 06/25/1997 | EP0780877A2 Method and apparatus for capturing and removing contaminant particles from an interior region of an ion implanter |
| 06/25/1997 | EP0780858A1 Miniature device to execute a predetermined function, in particular a microrelay |
| 06/25/1997 | EP0780729A1 Chemical-sensitization photoresist composition |
| 06/25/1997 | EP0780720A1 Method for repairing low noise metal lines in thin film imagers |
| 06/25/1997 | EP0780719A2 Method for repairing a low noise address line for thin film imager devices |
| 06/25/1997 | EP0780703A1 System for the detection of the presence of a conductive object, specifically an integrated circuit on a chip card |
| 06/25/1997 | EP0780696A1 IC test handler |
| 06/25/1997 | EP0780491A1 Process for reducing substrate damage during PECVD |
| 06/25/1997 | EP0780490A1 Methods and apparatus for reducing residues in semiconductor processing chambers |
| 06/25/1997 | EP0780488A1 Preconditioning process for treating deposition chamber prior to deposition of tungsten silicide coating on active substrates therein |
| 06/25/1997 | EP0780487A1 Gasketed target assembly |
| 06/25/1997 | EP0780435A1 Flexible epoxy adhesives with low bleeding tendency |
| 06/25/1997 | EP0780028A1 Ball grid array socket |
| 06/25/1997 | EP0780023A1 Process for self-aligned source for high density memory |
| 06/25/1997 | EP0780006A1 Process for producing a smart card module for contactless smart cards |
| 06/25/1997 | EP0779989A1 Membrane probing of circuits |
| 06/25/1997 | EP0779987A1 Membrane probing of circuits |
| 06/25/1997 | CN1152800A Semiconductor device and making method |
| 06/25/1997 | CN1152799A Semiconductor device and making process |
| 06/25/1997 | CN1152798A Method for making radiation-resistance semiconductor integrated circuit |
| 06/25/1997 | CN1152797A Elements with resin shell capsulation and making method |
| 06/25/1997 | CN1152796A Method for making semiconductor device of channel area compensation formed by phosphorus injection |