Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
06/2003
06/26/2003US20030119334 Method of manufacturing a flash memory cell
06/26/2003US20030119333 Method and system for coating and developing
06/26/2003US20030119332 Method for raw etching silicon solar cells
06/26/2003US20030119331 Method for manufacturing semiconductor device
06/26/2003US20030119330 Bi-layer photoresist method for forming high resolution semiconductor features
06/26/2003US20030119329 Method for fabricating semiconductor device capable of improving process margin of self align contact
06/26/2003US20030119328 Plasma processing apparatus, and cleaning method therefor
06/26/2003US20030119327 Vertical type transistor and method for fabricating the same
06/26/2003US20030119326 Method for forming isolation region in semiconductor device
06/26/2003US20030119325 Method of forming a metal line in a semiconductor device
06/26/2003US20030119324 Method for manufacturing metal line contact plug of semiconductor device
06/26/2003US20030119323 Method for fabricating transistor in semiconductor device
06/26/2003US20030119322 Method of producing semiconductor device and processing conditions setting device
06/26/2003US20030119321 Methods for planarization of Group VIII metal-containing surfaces using oxidizing gases
06/26/2003US20030119320 Short channel transistor fabrication method for semiconductor device
06/26/2003US20030119319 Methods for planarization of group VIII metal-containing surfaces using complexing agents
06/26/2003US20030119318 Substrate processing method and substrate processing apparatus
06/26/2003US20030119317 Semiconductor device and production method therefor
06/26/2003US20030119316 Methods for planarization of group VIII metal-containing surfaces using oxidizing agents
06/26/2003US20030119315 Method of forming ruthenium thin film using plasma enhanced process
06/26/2003US20030119314 Monos device having buried metal silicide bit line
06/26/2003US20030119313 Processes to form a metallic film stack
06/26/2003US20030119312 Floor cleaning with an absorbent pad, which has soaked with a cleaning solution, comprising small concentration of xanthan gum and hydrophobic cleaning solvents; avoidance of build-up or stickiness, easier mopping
06/26/2003US20030119311 Planar metal electroprocessing
06/26/2003US20030119309 Method for forming a silicide layer of semiconductor device
06/26/2003US20030119308 Sloped via contacts
06/26/2003US20030119307 Method of forming a dual damascene structure
06/26/2003US20030119306 Method for forming interconnect structure with low dielectric constant
06/26/2003US20030119305 Mask layer and dual damascene interconnect structure in a semiconductor device
06/26/2003US20030119304 Methods for planarization of metal-containing surfaces using halogens and halide salts
06/26/2003US20030119303 Method of forming a patterned tungsten damascene interconnect
06/26/2003US20030119302 Method of manufacturing semiconductor devices
06/26/2003US20030119301 Method of fabricating an IMD layer to improve global planarization in subsequent CMP
06/26/2003US20030119300 Method of making a bump on a substrate using multiple photoresist layers
06/26/2003US20030119299 Methods of ball grid array
06/26/2003US20030119298 Semiconductor device, a method of manufacturing the same and an electronic device
06/26/2003US20030119297 Metal redistribution layer having solderable pads and wire bondable pads
06/26/2003US20030119296 Semiconductor device and manufacturing method for the same
06/26/2003US20030119295 Wafer and method of fabricating the same
06/26/2003US20030119294 Method for forming wiring in semiconductor device
06/26/2003US20030119293 Method for forming fuse in semiconductor device
06/26/2003US20030119292 Integration of dual workfunction metal gate CMOS devices
06/26/2003US20030119291 Low-temperature grown high-quality ultra-thin praseodymium gate dielectrics
06/26/2003US20030119290 Transistor fabrication method
06/26/2003US20030119289 Thin-film transistor used as heating element for microreaction chamber
06/26/2003US20030119288 Method for fabricating a semiconductor device and a substrate processing apparatus
06/26/2003US20030119287 Laser-irradiation method and laser-irradiation device
06/26/2003US20030119286 Method for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidification
06/26/2003US20030119285 Method of manufacturing semiconductor device
06/26/2003US20030119281 Method for manufacturing semiconductor power device
06/26/2003US20030119280 Method for forming SOI substrate
06/26/2003US20030119279 Three dimensional device integration method and integrated device
06/26/2003US20030119278 Substrates bonded with oxide affinity agent and bonding method
06/26/2003US20030119277 Semiconductor device manufacturing method
06/26/2003US20030119276 Semiconductor device and process for producing the same
06/26/2003US20030119274 Method of forming an alignment mark structure using standard process steps for forming vertical gate transistors
06/26/2003US20030119273 Methods of preventing reduction of irox during pzt formation by metalorganic chemical vapor deposition or other processing
06/26/2003US20030119272 Semiconductor device and method for forming the same
06/26/2003US20030119271 Methods of preventing reduction of IrOx during PZT formation by metalorganic chemical vapor deposition or other processing
06/26/2003US20030119270 Method for making a bipolar transistor with an oxygen implanted emitter window
06/26/2003US20030119269 Method for fabricating semiconductor transistor device
06/26/2003US20030119268 Method for manufacturing semiconductor device of sub-micron or high voltage CMOS structure
06/26/2003US20030119267 Structure of horizontal surrounding gate flash memory cell
06/26/2003US20030119266 Method for forming isolation layer in semiconductor device
06/26/2003US20030119265 Semiconductor memory device
06/26/2003US20030119264 Method for fabricating highly integrated transistor
06/26/2003US20030119263 Method of manufacturing a flash memory cell
06/26/2003US20030119262 Method for manufacturing non-volatile semiconductor memory device
06/26/2003US20030119261 Method for fabricating a field-effect transistor having a floating gate
06/26/2003US20030119260 Method of manufacturing a flash memory cell
06/26/2003US20030119259 Method of forming a self-aligned floating gate in flash memory cell
06/26/2003US20030119258 Process for fabricating a dual charge storage location memory cell
06/26/2003US20030119257 Method of manufacturing a flash memory cell
06/26/2003US20030119256 Flash memory cell and method of manufacturing the same
06/26/2003US20030119255 Method of manufacturing a flash memory cell
06/26/2003US20030119254 Reducing secondary injection effects
06/26/2003US20030119253 Methods of forming capacitor structures and DRAM arrays
06/26/2003US20030119252 Method for fabricating semiconductor device
06/26/2003US20030119251 Methods of preventing reduction of IrOx during PZT formation by metalorganic chemical vapor deposition or other processing
06/26/2003US20030119250 Method for manufacturing semiconductor device
06/26/2003US20030119249 Carbide emitter mask etch stop
06/26/2003US20030119248 Method of fabricating dual threshold voltage n-channel and p-channel MOSFETs with a single extra masked implant operation
06/26/2003US20030119247 Semiconductor device and its production method
06/26/2003US20030119246 Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics
06/26/2003US20030119245 Semiconductor device having a trench isolation and method of fabricating the same
06/26/2003US20030119244 Methods of forming conductive interconnects
06/26/2003US20030119243 Semiconductor integrated circuit with resistor and method for fabricating thereof
06/26/2003US20030119242 MFMOS capacitors with high dielectric constant materials
06/26/2003US20030119241 Methods of forming an electrically conductive line
06/26/2003US20030119240 Method for fabricating semiconductor device
06/26/2003US20030119239 Production method of III nitride compound semiconductor and III nitride compound semiconductor element
06/26/2003US20030119238 Method of forming a capacitor dielectric structure
06/26/2003US20030119237 CMOS vertical replacement gate (VRG) transistors
06/26/2003US20030119236 Method of fabricating enhanced EPROM structures with accentuated hot electron generation regions
06/26/2003US20030119235 MOS semiconductor device having gate insulating film containing nitrogen and method of manufacturing the same
06/26/2003US20030119234 Method of filling a concave portion with an insulating material
06/26/2003US20030119233 Method of fabricating semiconductor device with T-type gate electrode
06/26/2003US20030119232 Method for manufacturing x-ray detector
06/26/2003US20030119231 Semiconductor device and method of making thereof
06/26/2003US20030119230 Thin film transistor, liquid crystal display substrate, and their manufacture methods
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