Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
10/2003
10/22/2003EP1000346B1 System for detecting anomalies and/or features of a surface
10/22/2003EP0831963B1 Microfabricated porous membranes with bulk support
10/22/2003EP0792517B1 Electrical contact structures from flexible wire
10/22/2003EP0769207B1 Method of fabricating self-aligned contact trench dmos transistors
10/22/2003CN2582167Y Wafer bearing tool
10/22/2003CN2582166Y Flip chip wafer measuring structure
10/22/2003CN1451181A Method and device for transferring spin-poarized charge carriers
10/22/2003CN1451179A Shaped springs and methds of fabricating and using shaped springs
10/22/2003CN1451178A Improved flip-chip package
10/22/2003CN1451177A Improved flourine deped silicon dioxide film
10/22/2003CN1451176A Process for selectively etching doped silicon dioxide silicon dioxide and silicon nitride
10/22/2003CN1451174A Operation monitoring method for treatment apparatus
10/22/2003CN1451173A Methods of fabricating gallium nitride semicnductor layers on substrates including non-gallium nitride posts and gallium nitride
10/22/2003CN1451172A Use of pulsed votage in a plasma reactor
10/22/2003CN1451164A Memory cell component and production method thereof
10/22/2003CN1451102A Method of increasing the conductivity of a transparent conductive layer
10/22/2003CN1450847A Plasma process apparatus and method
10/22/2003CN1450841A Illuminous equipment, LCD equipment and mfg method thereof
10/22/2003CN1450839A Method for mfg of electroluminescence display apparatus
10/22/2003CN1450667A Semiconductor lighting element and mfg method thereof
10/22/2003CN1450665A Semiconductor display device
10/22/2003CN1450661A Grid dielectric material zirconium aluminate film used for MOS field effect transistor and making method thereof
10/22/2003CN1450660A Grid dielectric material zirconium aluminate film used for MOS field effect transistor and making method thereof
10/22/2003CN1450659A Semiconductor element and display device using same
10/22/2003CN1450658A Semiconductor device and mfg method thereof
10/22/2003CN1450657A Vertical high-power field-effect transistor unit structure
10/22/2003CN1450656A Grid medium stacking structure
10/22/2003CN1450654A Compound crytal silicon inter grid dielectric layer structure with high dielectric constant and formation method thereof
10/22/2003CN1450653A Field effect transistor adapted for extra-dup submicrometer field and preparation process thereof
10/22/2003CN1450652A Semiconductor device and mfg method and power amplifier moudle
10/22/2003CN1450651A Image sensor package structure and image taking module using said sensor
10/22/2003CN1450650A Semiconductor device and mfg method thereof
10/22/2003CN1450649A Semiconductor device and mfg method, SOI substrate and mfg method, and display device thereof
10/22/2003CN1450648A Method for forming semiconductor memory array and the made memory arroy by same
10/22/2003CN1450647A Semiconductor device
10/22/2003CN1450646A Ultraviolet ray programmed p-type mask type ROM and making method thereof
10/22/2003CN1450644A Nonvolatile memery unit and nonvolatile memory array, and operation method thereof
10/22/2003CN1450643A Memory device utilizing carbon nanotubes and method of fabricating the memory device
10/22/2003CN1450637A Low-impedance olecoupling device
10/22/2003CN1450636A Wiring structure in semiconductor device
10/22/2003CN1450635A Inner storage node and making method thereof
10/22/2003CN1450631A Electro-optical deivce, semiconductor device and its mfg method and projection circuit and electric appliances
10/22/2003CN1450630A Initialization method for P-type silicon nitride ROM device
10/22/2003CN1450629A Method for making source channel used separating grid flash memory component
10/22/2003CN1450628A Flash memory structure and mfg method thereof
10/22/2003CN1450627A Method for estimating maximum power comsumption of large scale digital circuit with parallel structure
10/22/2003CN1450626A Mfg method with regular embedded structure outline
10/22/2003CN1450625A Method for forming adhesive reinforced layer between copper layer and etching stop layer
10/22/2003CN1450624A Method for forming low dielectric constant dielectric layer and conductive interconnector structure
10/22/2003CN1450623A IC shallow channel isolation method
10/22/2003CN1450622A Method for shallow channel isolated side wall oxidation layer with low-stress and no corrosion area
10/22/2003CN1450621A Method for eliminating stress and damage while forming isolation component
10/22/2003CN1450620A Method for making semiconductor with channel capacitor
10/22/2003CN1450619A Method for making capacitor of mixed circuit component by ion implantation
10/22/2003CN1450618A Vacuum suction device capable of reducing particle pollution
10/22/2003CN1450617A Hazard detection and elimination method based on circuit static time-delay property
10/22/2003CN1450616A Turn-over chip fill-combined on the substrate under the layer added by welding wax ball and wax column
10/22/2003CN1450615A Method for raising silicon nitride surface stickiness utilizing patterned metal structure
10/22/2003CN1450614A Method for making ceramic chip package
10/22/2003CN1450613A Image sensor package method
10/22/2003CN1450612A Method for forming convex point on back side of single side flexible sustrate
10/22/2003CN1450611A Preparation of transparent low/high resistance composite film by high-temp. oxidation process
10/22/2003CN1450609A Precleaning process for etched silicon-containing material with low dielectric constant
10/22/2003CN1450608A Liquid processing apparatus and method thereof
10/22/2003CN1450607A Double-side waxless polishing method realizing single side polising
10/22/2003CN1450606A Semiconductor wafer cleaning apparatus
10/22/2003CN1450605A Abrading pad with water-proof window
10/22/2003CN1450604A Plasma working method and equipment and support frame for plasma working
10/22/2003CN1450603A High dielectric grid medium and preparation process thereof
10/22/2003CN1450602A Method for forming MOS transistor with self-alignment
10/22/2003CN1450601A Method for making top contact plug on isolator silicon material substrate
10/22/2003CN1450600A Method for mfg of double grid structure
10/22/2003CN1450599A Methof for preparing 3-D orientation zinc oxide film
10/22/2003CN1450598A Nozzle of CVD equipment for mfg of semiconductor device
10/22/2003CN1450597A Method for defining dielectric layer with low dielectric constant
10/22/2003CN1450596A Method for mfg of wire in semiconductor component
10/22/2003CN1450595A Composite photoresist layer structure
10/22/2003CN1450594A Semiconductor device and mfg method thereof
10/22/2003CN1450593A Semiconductor device and mfg method thereof
10/22/2003CN1450592A Method for making wafer identifying label
10/22/2003CN1450567A High-dielectric material lithium phosphorus oxigen nitrogen
10/22/2003CN1450561A Non-volatile, multi-level memory device
10/22/2003CN1450559A 半导体存储器 Semiconductor memory
10/22/2003CN1450503A Infrared remote control receiver (IRCR) having semiconductor signal processing device
10/22/2003CN1450413A Photoresist removing method and apparatus thereof
10/22/2003CN1450412A Lighographic apparatus, alignment method and device mfg method
10/22/2003CN1450411A Method and apparatus for porforming rule-based gate shrink utilizing dipole illumination
10/22/2003CN1450410A Lighographic apparatus and device mfg method
10/22/2003CN1450406A Method and apparatus for definiting mask pattern by doubling space frequency technology
10/22/2003CN1450403A Method and apparatus for decomposing semiconductor device patterns into phase and chrome regions for chromeless phase lithography
10/22/2003CN1450393A Mask, substrate with light reflection film, method for making light-reflection film, display device and electric appliance
10/22/2003CN1450357A Full speed current test method for IC
10/22/2003CN1450008A Heat treatment device with filter dust discharging function
10/22/2003CN1449980A Sustrate olelivery mechanism
10/22/2003CN1125531C Electrostatic chuck assembly
10/22/2003CN1125491C Multi-layer plated lead frame
10/22/2003CN1125489C Heat dissipated semiconducror device
10/22/2003CN1125487C Method for making storage electrode of DRAM capacitor
10/22/2003CN1125486C Method for forming memory cell
10/22/2003CN1125485C Method of fabricating semiconductor chips with silicide and implanted junctions