| Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
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| 10/22/2003 | EP1000346B1 System for detecting anomalies and/or features of a surface |
| 10/22/2003 | EP0831963B1 Microfabricated porous membranes with bulk support |
| 10/22/2003 | EP0792517B1 Electrical contact structures from flexible wire |
| 10/22/2003 | EP0769207B1 Method of fabricating self-aligned contact trench dmos transistors |
| 10/22/2003 | CN2582167Y Wafer bearing tool |
| 10/22/2003 | CN2582166Y Flip chip wafer measuring structure |
| 10/22/2003 | CN1451181A Method and device for transferring spin-poarized charge carriers |
| 10/22/2003 | CN1451179A Shaped springs and methds of fabricating and using shaped springs |
| 10/22/2003 | CN1451178A Improved flip-chip package |
| 10/22/2003 | CN1451177A Improved flourine deped silicon dioxide film |
| 10/22/2003 | CN1451176A Process for selectively etching doped silicon dioxide silicon dioxide and silicon nitride |
| 10/22/2003 | CN1451174A Operation monitoring method for treatment apparatus |
| 10/22/2003 | CN1451173A Methods of fabricating gallium nitride semicnductor layers on substrates including non-gallium nitride posts and gallium nitride |
| 10/22/2003 | CN1451172A Use of pulsed votage in a plasma reactor |
| 10/22/2003 | CN1451164A Memory cell component and production method thereof |
| 10/22/2003 | CN1451102A Method of increasing the conductivity of a transparent conductive layer |
| 10/22/2003 | CN1450847A Plasma process apparatus and method |
| 10/22/2003 | CN1450841A Illuminous equipment, LCD equipment and mfg method thereof |
| 10/22/2003 | CN1450839A Method for mfg of electroluminescence display apparatus |
| 10/22/2003 | CN1450667A Semiconductor lighting element and mfg method thereof |
| 10/22/2003 | CN1450665A Semiconductor display device |
| 10/22/2003 | CN1450661A Grid dielectric material zirconium aluminate film used for MOS field effect transistor and making method thereof |
| 10/22/2003 | CN1450660A Grid dielectric material zirconium aluminate film used for MOS field effect transistor and making method thereof |
| 10/22/2003 | CN1450659A Semiconductor element and display device using same |
| 10/22/2003 | CN1450658A Semiconductor device and mfg method thereof |
| 10/22/2003 | CN1450657A Vertical high-power field-effect transistor unit structure |
| 10/22/2003 | CN1450656A Grid medium stacking structure |
| 10/22/2003 | CN1450654A Compound crytal silicon inter grid dielectric layer structure with high dielectric constant and formation method thereof |
| 10/22/2003 | CN1450653A Field effect transistor adapted for extra-dup submicrometer field and preparation process thereof |
| 10/22/2003 | CN1450652A Semiconductor device and mfg method and power amplifier moudle |
| 10/22/2003 | CN1450651A Image sensor package structure and image taking module using said sensor |
| 10/22/2003 | CN1450650A Semiconductor device and mfg method thereof |
| 10/22/2003 | CN1450649A Semiconductor device and mfg method, SOI substrate and mfg method, and display device thereof |
| 10/22/2003 | CN1450648A Method for forming semiconductor memory array and the made memory arroy by same |
| 10/22/2003 | CN1450647A Semiconductor device |
| 10/22/2003 | CN1450646A Ultraviolet ray programmed p-type mask type ROM and making method thereof |
| 10/22/2003 | CN1450644A Nonvolatile memery unit and nonvolatile memory array, and operation method thereof |
| 10/22/2003 | CN1450643A Memory device utilizing carbon nanotubes and method of fabricating the memory device |
| 10/22/2003 | CN1450637A Low-impedance olecoupling device |
| 10/22/2003 | CN1450636A Wiring structure in semiconductor device |
| 10/22/2003 | CN1450635A Inner storage node and making method thereof |
| 10/22/2003 | CN1450631A Electro-optical deivce, semiconductor device and its mfg method and projection circuit and electric appliances |
| 10/22/2003 | CN1450630A Initialization method for P-type silicon nitride ROM device |
| 10/22/2003 | CN1450629A Method for making source channel used separating grid flash memory component |
| 10/22/2003 | CN1450628A Flash memory structure and mfg method thereof |
| 10/22/2003 | CN1450627A Method for estimating maximum power comsumption of large scale digital circuit with parallel structure |
| 10/22/2003 | CN1450626A Mfg method with regular embedded structure outline |
| 10/22/2003 | CN1450625A Method for forming adhesive reinforced layer between copper layer and etching stop layer |
| 10/22/2003 | CN1450624A Method for forming low dielectric constant dielectric layer and conductive interconnector structure |
| 10/22/2003 | CN1450623A IC shallow channel isolation method |
| 10/22/2003 | CN1450622A Method for shallow channel isolated side wall oxidation layer with low-stress and no corrosion area |
| 10/22/2003 | CN1450621A Method for eliminating stress and damage while forming isolation component |
| 10/22/2003 | CN1450620A Method for making semiconductor with channel capacitor |
| 10/22/2003 | CN1450619A Method for making capacitor of mixed circuit component by ion implantation |
| 10/22/2003 | CN1450618A Vacuum suction device capable of reducing particle pollution |
| 10/22/2003 | CN1450617A Hazard detection and elimination method based on circuit static time-delay property |
| 10/22/2003 | CN1450616A Turn-over chip fill-combined on the substrate under the layer added by welding wax ball and wax column |
| 10/22/2003 | CN1450615A Method for raising silicon nitride surface stickiness utilizing patterned metal structure |
| 10/22/2003 | CN1450614A Method for making ceramic chip package |
| 10/22/2003 | CN1450613A Image sensor package method |
| 10/22/2003 | CN1450612A Method for forming convex point on back side of single side flexible sustrate |
| 10/22/2003 | CN1450611A Preparation of transparent low/high resistance composite film by high-temp. oxidation process |
| 10/22/2003 | CN1450609A Precleaning process for etched silicon-containing material with low dielectric constant |
| 10/22/2003 | CN1450608A Liquid processing apparatus and method thereof |
| 10/22/2003 | CN1450607A Double-side waxless polishing method realizing single side polising |
| 10/22/2003 | CN1450606A Semiconductor wafer cleaning apparatus |
| 10/22/2003 | CN1450605A Abrading pad with water-proof window |
| 10/22/2003 | CN1450604A Plasma working method and equipment and support frame for plasma working |
| 10/22/2003 | CN1450603A High dielectric grid medium and preparation process thereof |
| 10/22/2003 | CN1450602A Method for forming MOS transistor with self-alignment |
| 10/22/2003 | CN1450601A Method for making top contact plug on isolator silicon material substrate |
| 10/22/2003 | CN1450600A Method for mfg of double grid structure |
| 10/22/2003 | CN1450599A Methof for preparing 3-D orientation zinc oxide film |
| 10/22/2003 | CN1450598A Nozzle of CVD equipment for mfg of semiconductor device |
| 10/22/2003 | CN1450597A Method for defining dielectric layer with low dielectric constant |
| 10/22/2003 | CN1450596A Method for mfg of wire in semiconductor component |
| 10/22/2003 | CN1450595A Composite photoresist layer structure |
| 10/22/2003 | CN1450594A Semiconductor device and mfg method thereof |
| 10/22/2003 | CN1450593A Semiconductor device and mfg method thereof |
| 10/22/2003 | CN1450592A Method for making wafer identifying label |
| 10/22/2003 | CN1450567A High-dielectric material lithium phosphorus oxigen nitrogen |
| 10/22/2003 | CN1450561A Non-volatile, multi-level memory device |
| 10/22/2003 | CN1450559A 半导体存储器 Semiconductor memory |
| 10/22/2003 | CN1450503A Infrared remote control receiver (IRCR) having semiconductor signal processing device |
| 10/22/2003 | CN1450413A Photoresist removing method and apparatus thereof |
| 10/22/2003 | CN1450412A Lighographic apparatus, alignment method and device mfg method |
| 10/22/2003 | CN1450411A Method and apparatus for porforming rule-based gate shrink utilizing dipole illumination |
| 10/22/2003 | CN1450410A Lighographic apparatus and device mfg method |
| 10/22/2003 | CN1450406A Method and apparatus for definiting mask pattern by doubling space frequency technology |
| 10/22/2003 | CN1450403A Method and apparatus for decomposing semiconductor device patterns into phase and chrome regions for chromeless phase lithography |
| 10/22/2003 | CN1450393A Mask, substrate with light reflection film, method for making light-reflection film, display device and electric appliance |
| 10/22/2003 | CN1450357A Full speed current test method for IC |
| 10/22/2003 | CN1450008A Heat treatment device with filter dust discharging function |
| 10/22/2003 | CN1449980A Sustrate olelivery mechanism |
| 10/22/2003 | CN1125531C Electrostatic chuck assembly |
| 10/22/2003 | CN1125491C Multi-layer plated lead frame |
| 10/22/2003 | CN1125489C Heat dissipated semiconducror device |
| 10/22/2003 | CN1125487C Method for making storage electrode of DRAM capacitor |
| 10/22/2003 | CN1125486C Method for forming memory cell |
| 10/22/2003 | CN1125485C Method of fabricating semiconductor chips with silicide and implanted junctions |