Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
02/2004
02/19/2004WO2004015727A2 Method for controlling a recess etch process
02/19/2004WO2004015596A2 Method and system for debugging using replicated logic
02/19/2004WO2004015496A2 Using scanning probe microscope topographic data to repair photomask defect using charged particle beams
02/19/2004WO2004015434A1 Placing table drive device and probe method
02/19/2004WO2004015432A1 Fiducial alignment marks on microelectronic spring contacts
02/19/2004WO2004015400A1 A method of manufacturing integrated circuit sensors
02/19/2004WO2004015365A1 Process endpoint detection method using broadband reflectometry
02/19/2004WO2004015364A1 Method for in-situ monitoring of patterned substrate processing using reflectometry
02/19/2004WO2004015348A1 Led heat lamp arrays for cvd heating
02/19/2004WO2004015165A1 Improvements to showerheads
02/19/2004WO2004015157A2 Methods and apparatus for in situ substrate temperature monitoring by electromagnetic radiation emission
02/19/2004WO2004015021A1 Cmp abrasive and substrate polishing method
02/19/2004WO2004015018A1 Reactive aqueous metal oxide sols as polishing slurries for low dielectric constant materials
02/19/2004WO2004014964A2 PHOTORESISTS, FLUORINATED POLYMERS AND PROCESSES FOR 157 nm MICROLITHOGRAPHY
02/19/2004WO2004014785A2 Method for producing at least one small opening in a layer on a substrate and components produced according to said method
02/19/2004WO2004014784A1 Micromachine and production method therefor
02/19/2004WO2004014647A1 Method for producing a ceramic substrate
02/19/2004WO2004014626A1 Method and apparatus for manufacturing a packaged semiconductor device, packaged semiconductor device obtained with such a method and metal carrier suitable for use in such a method
02/19/2004WO2004014607A1 A method of polishing a wafer of material
02/19/2004WO2004014604A1 Post-cmp cleaning of semiconductor wafer surfaces using a combination of aqueous and cryogenic cleaning techniques
02/19/2004WO2004001818A3 Shared sensors for detecting substrate position/presence
02/19/2004WO2004001809A3 Method for energy-assisted atomic layer deposition and removal
02/19/2004WO2003107413A3 Method and device for producing an electronic component having external contact surfaces
02/19/2004WO2003104900A3 Microelectronic cleaning compositions containing oxidizers and organic solvents
02/19/2004WO2003096378A8 Display driver ic, display module and electrical device incorporating a graphics engine
02/19/2004WO2003091822A3 Method for producing nitrides and uses thereof as fluorescent markers and light-emitting diodes
02/19/2004WO2003083902A3 Thermal production of nanowires
02/19/2004WO2003076352A3 Method and apparatus for manufacturing silica-titania extreme ultraviolet elements
02/19/2004WO2003075098A3 Prevention of contamination of optical elements and cleaning said elements
02/19/2004WO2003071586A3 Method of processing a semiconductor wafer and preprocessed semiconductor wafer
02/19/2004WO2003069658A3 Strained si based layer made by uhv-cvd, and devices therein
02/19/2004WO2003058709A3 Method for forming a shallow trench isolation structure with improved corner rounding
02/19/2004WO2003055287A3 Plasma reactor with overhead rf electrode tuned to the plasma with arcing suppression
02/19/2004WO2003054920A3 Method for the production of led bodies
02/19/2004WO2003054564A3 Probe card covering system and method
02/19/2004WO2003052813A3 Dual cure b-stageable underfill for wafer level
02/19/2004WO2003043015A3 Multiple turn for conductive line programming mram
02/19/2004WO2003041138A3 Sintered polycrystalline gallium nitride
02/19/2004WO2003038858A8 A semiconductor manufacturing apparatus having a built-in inspection apparatus and method therefor
02/19/2004WO2003030224A3 Barrier formation using novel sputter-deposition method
02/19/2004WO2003017341A3 Methods of forming metal-comprising materials and capacitor electrodes; and capacitor constructions
02/19/2004WO2003015173A3 Floating gate memory array and methods of forming
02/19/2004WO2003015132A9 Dual layer hard mask for edram gate etch process
02/19/2004WO2003005447A8 Structure and method of fabricating embedded vertical dram arrays with silicided bitline and polysilicon interconnect
02/19/2004WO2002103791A3 Semiconductor structure implementing sacrificial material and methods for making and implementing the same
02/19/2004WO2002101767A3 High voltage, high temperature capacitor structures and methods of fabricating same
02/19/2004WO2002101748A3 Sense amplifier and architecture for open digit arrays
02/19/2004WO2002097820A3 Pair wise programming method for dual cell eeprom
02/19/2004WO2002084401A9 Photoresist compositions comprising solvents for short wavelength imaging
02/19/2004WO2002082182A3 Alleviating line end shortening in transistor endcaps by extending phase shifters
02/19/2004WO2002080287A3 Semiconductor structures and devices for detecting far-infrared light
02/19/2004WO2002079876A3 Lithographic template
02/19/2004WO2002071560A3 Separating of optical integrated modules and structures formed thereby
02/19/2004WO2002068320A3 Devices having substrates with openings passing through the substrates and conductors in the openings, and methods of manufacture
02/19/2004WO2002058145A3 Layered dielectric nanoporous materials and methods of producing same
02/19/2004WO2002047173A3 Quantum well infrared photodetector
02/19/2004WO2002046975A3 Routing method and apparatus
02/19/2004WO2002039500A3 Use of a barrier sputter reactor to remove an underlying barrier layer
02/19/2004US20040034815 System and method of design for testability
02/19/2004US20040034516 Method for characterizing and simulating a chemical mechanical polishing process
02/19/2004US20040034160 Mixtures of addition copolymers, acid generators and solvents, used as photosensitive coatings in lithography; relief images
02/19/2004US20040034134 A polymer binder, and a solvent system as solid component for protecting base material during etching, characterized by that about at least 70 % removed from the base material when subjected to pre-baking thermal stability test
02/19/2004US20040033917 Combines deionized water, an organic acid and a fluoride compound for cleaning a semiconductor after polishing a copper layer.
02/19/2004US20040033769 Carrier head with a flexible membrane for a chemical mechanical polishing system
02/19/2004US20040033764 Chemical/mechanical polishing slurry and chemical mechanical polishing method using the same
02/19/2004US20040033762 Method of detecting a substrate in a carrier head
02/19/2004US20040033761 Polishing apparatus
02/19/2004US20040033757 Methods and systems for planarizing microelectronic devices with Ge-Se-Ag layers
02/19/2004US20040033703 Method for forming amino-free low k material
02/19/2004US20040033702 Deposition of thin films by laser ablation
02/19/2004US20040033701 Lanthanide doped tiox dielectric films
02/19/2004US20040033700 Electronic device manufacture
02/19/2004US20040033699 Method of making an integrated circuit using an EUV mask formed by atomic layer deposition
02/19/2004US20040033698 Method of forming oxide layer using atomic layer deposition method and method of forming capacitor of semiconductor device using the same
02/19/2004US20040033697 Method for etching high-aspect-ratio features
02/19/2004US20040033696 Post-CMP removal of surface contaminants from silicon wafer
02/19/2004US20040033695 Method for manufacturing semiconductor device
02/19/2004US20040033694 Method of making a vertical gate semiconductor device
02/19/2004US20040033693 Slurry for chemical mechanical polishing process and method of manufacturing semiconductor device using the same
02/19/2004US20040033692 Fabrication method for semiconductor integrated circuit device
02/19/2004US20040033690 Method for polishing a substrate surface
02/19/2004US20040033689 Method for defining a dummy pattern around an alignment mark on a wafer
02/19/2004US20040033688 Atomic layer deposition methods
02/19/2004US20040033687 Activation of oxides for electroless plating
02/19/2004US20040033686 Semiconductor device having a metal-semiconductor junction with a reduced contact resistance
02/19/2004US20040033685 Aluminum/copper clad interconnect layer for VLSI applications
02/19/2004US20040033684 Methods for forming openings in doped silicon dioxide
02/19/2004US20040033683 Method of manufacturing semiconductor electrode and semiconductor device provided with electrodes manufactured by the method
02/19/2004US20040033682 Selective passivation of exposed silicon
02/19/2004US20040033681 Lanthanide doped TiOx dielectric films by plasma oxidation
02/19/2004US20040033680 Selective passivation of exposed silicon
02/19/2004US20040033678 Method and apparatus to prevent lateral oxidation in a transistor utilizing an ultra thin oxygen-diffusion barrier
02/19/2004US20040033677 Method and apparatus to prevent lateral oxidation in a transistor utilizing an ultra thin oxygen-diffusion barrier
02/19/2004US20040033676 Electronic components and method of fabricating the same
02/19/2004US20040033674 Deposition of amorphous silicon-containing films
02/19/2004US20040033673 Method of packaging semiconductor dice employing at least one redistribution layer
02/19/2004US20040033672 Semiconductor device and method of fabricating the same
02/19/2004US20040033671 Double polysilicon bipolar transistor and method of manufacture therefor
02/19/2004US20040033670 Methods of code programming a mask ROM
02/19/2004US20040033669 Complementary transistors having respective gates formed from a metal and a corresponding metal-silicide