Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
10/2004
10/28/2004US20040212002 Integrated circuits with rhodium-rich structures
10/28/2004US20040212001 Multilayer analog interconnecting line layout for a mixed-signal integrated circuit
10/28/2004US20040212000 Semiconductor device
10/28/2004US20040211999 Semiconductor integrated circuit device and manufacturing method thereof
10/28/2004US20040211998 Lanthanide series layered superlattice materials for integrated circuit applications
10/28/2004US20040211997 Ferroelectric memory device and method for manufacturing the same
10/28/2004US20040211995 Magnetic random access memory including middle oxide layer and method of manufacturing the same
10/28/2004US20040211993 Semiconductor integrated circuit device and a method of manufacturing the same
10/28/2004US20040211992 Method for manufacturing and structure for transistors with reduced gate to contact spacing
10/28/2004US20040211991 Integrated circuit having a doped porous dielectric and method of manufacturing the same
10/28/2004US20040211990 Semiconductor device
10/28/2004US20040211989 Electrochemical device
10/28/2004US20040211987 Field effect transistor (FET) reset device structure for photodiode image sensor
10/28/2004US20040211984 Process for manufacturing MOS semiconductor device having inactive zone with alternating thickness silicon oxide layer
10/28/2004US20040211981 Semiconductor device having memory cell portion and manufacturing method thereof
10/28/2004US20040211980 Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same
10/28/2004US20040211978 Semiconductor device and method of producing same
10/28/2004US20040211977 Field effect transistor
10/28/2004US20040211976 Compound semiconductor FET
10/28/2004US20040211974 Two mask shottky barrier diode with locos structure
10/28/2004US20040211973 Silicon-based ultra-violet LED
10/28/2004US20040211967 Ultraviolet light-emitting device in which p-type semiconductor is used
10/28/2004US20040211965 Semiconductor device and manufacturing method thereof
10/28/2004US20040211962 Semiconductor device, method of fabricating same, and, electrooptical device
10/28/2004US20040211961 Flat panel display with thin film transistor
10/28/2004US20040211960 Image recognition device and liquid crystal display apparatus having the same
10/28/2004US20040211959 Apparatus for and method of processing substrate
10/28/2004US20040211958 Semiconductor device having a conductive layer and a manufacturing method thereof
10/28/2004US20040211956 Organic electroluminescent device and method of fabricating the same
10/28/2004US20040211955 InGaAs/GaAs high electron mobility transistor
10/28/2004US20040211941 Composition for forming a transparent conducting film, solution for forming a transparent conducting film and method of forming a transparent conducting film
10/28/2004US20040211925 Charged particle beam apparatus, charged particle beam irradiation method, and method of manufacturing semiconductor device
10/28/2004US20040211924 Substrate processing apparatus and maintenance method therefor
10/28/2004US20040211922 Lithographic apparatus, device manufacturing method, and device manufactured thereby
10/28/2004US20040211921 Position measuring device, position measuring system, lithographic apparatus, and device manufacturing method
10/28/2004US20040211920 Lithographic apparatus and device manufacturing method
10/28/2004US20040211910 Composite active-matrix substrates, methods for manufacturing same, and electromagnetic wave capturing devices
10/28/2004US20040211812 Bonding device and bonding tool
10/28/2004US20040211767 Ceramic heater and support pin
10/28/2004US20040211764 Purged heater-susceptor for an ALD/CVD reactor
10/28/2004US20040211762 Laser beam processing machine
10/28/2004US20040211761 Method and apparatus for bonding a wire to a bond pad on a device
10/28/2004US20040211759 Merie plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
10/28/2004US20040211756 Wet etching apparatus and wet etching method using ultraviolet light
10/28/2004US20040211754 Method of forming stepped structures employing imprint lithography
10/28/2004US20040211750 Laser scribe on front side of semiconductor wafer
10/28/2004US20040211749 Methods for contacting conducting layers overlying magnetoelectronic elements of MRAM devices
10/28/2004US20040211701 Automatic door opener
10/28/2004US20040211700 Configurable insert for a manufacturing carrier
10/28/2004US20040211675 Removal of surface oxides by electron attachment for wafer bumping applications
10/28/2004US20040211673 Electroplating a copper thin film on the copper seed layer by using an aqueous solution of 10 to 40 wt % of copper hexafluorosilicate as an electrolyte for forming a semiconductor integrated circuit having a copper seed layer
10/28/2004US20040211665 Barrier formation using novel sputter-deposition method
10/28/2004US20040211662 Method and apparatus for the electrochemical deposition and removal of a material on a workpiece surface
10/28/2004US20040211661 Applying a low resputtering target power to the plasma deposition sputtering target for inducing a resputtering plasma environment proximate the substrate; resputtering coating layer within resputtering plasma environment for reducing the coating layer thickness in bottom region
10/28/2004US20040211660 Controlling temperature of a plurality of segments of the wall or other surfaces exposed to the plasma with a plurality of temperature control systems of a first type; controlling the temperature of a plurality of segments of the wall or the other surfaces with a plurality of temperature control system
10/28/2004US20040211592 Wiring board and electro-optical device, method of manufacture thereof, and electronic instrument
10/28/2004US20040211591 Wiring board, semiconductor device, electronic device, and circuit board for electronic parts
10/28/2004US20040211518 Plasma processing apparatus
10/28/2004US20040211517 Method of etching with NH3 and fluorine chemistries
10/28/2004US20040211516 High throughput plasma treatment system
10/28/2004US20040211514 Delivery of dissolved ozone
10/28/2004US20040211449 Cleaning apparatus and substrate processing apparatus
10/28/2004US20040211447 Apparatus and method of securing a workpiece during high-pressure processing
10/28/2004US20040211442 Method and apparatus for removing polymer residue from semiconductor wafer edge and back side
10/28/2004US20040211440 System and method for dampening high pressure impact on porous materials
10/28/2004US20040211365 Chemical vapor phase epitaxial device
10/28/2004US20040211364 Gas port sealing for CVD/CVI furnace hearth plates
10/28/2004US20040211360 Processing equipment
10/28/2004US20040211357 Method of manufacturing a gap-filled structure of a semiconductor device
10/28/2004US20040211356 Method for processing semiconductor device apparatus for processing a semiconductor and apparatus for processing semiconductor device
10/28/2004US20040211355 Oxygen-doped n-type gallium nitride freestanding single crystal substrate
10/28/2004US20040211337 for polishing the surface of a thin film layer of a semiconductor or electroluminescent device; silica coating prevents tendency of ceria particles tends to easily agglomerate when compared to other abrasive particles
10/28/2004US20040211270 Polyhedron inspection feeder and polyhedron inspection apparatus
10/28/2004US20040211061 Method of forming socket contacts
10/28/2004US20040211060 Method of mounting an electronic part
10/28/2004DE20309856U1 Heat sink for semiconductor components has holders with divergent inner walls and mounting sections with corresponding convergent outer walls
10/28/2004DE19983428B4 Conductive plug for semiconductor device used in SRAM
10/28/2004DE19983274B4 Verfahren zum Herstellen eines nichtflüchtigen Halbleiterspeicherbauteils A method of manufacturing a nonvolatile semiconductor memory device
10/28/2004DE19848070B4 Niedrigenergie-Elektronenstrahllithographie Low-energy electron beam lithography
10/28/2004DE19825381B4 Verfahren zur Handhabung von Wafern großen Durchmessers während eines Temperprozesses A method for handling wafers of large diameter, during a tempering process
10/28/2004DE19740904B4 Verfahren zum Beseitigen von Sauerstoff-Restverunreinigungen aus tiegelgezogenen Siliziumwafern A method for removing residual oxygen impurities from the crucible pulled silicon wafers
10/28/2004DE10334388B3 Coating method for application of solder material to contact bumps of microchip using magnetization of contact bumps so that magnetic or magnetizable solder material is magnetically adhered
10/28/2004DE10314574A1 Production of a shallow trench insulation structure used in the production of integrated circuits comprises forming a mask on a substrate, forming trenches in the substrate using a mask, and further processing
10/28/2004DE10314504A1 Eine verbesserte Technik zur Herstellung eines Oxid/Nitrid-Schichtstapels durch Kompensieren von Stickstoffungleichförmigkeiten An improved technique for producing an oxide / nitride layer stack by compensating Stickstoffungleichförmigkeiten
10/28/2004DE10311312A1 Production of insulator structures in semiconductor substrate used in semiconductor industry comprises forming barrier layer blocking exchange of additive with substrate before main layer is deposited
10/28/2004DE10308924B3 Integrierte Halbleiterschaltung mit einer Vielzahl von Speicherzellen A semiconductor integrated circuit having a plurality of memory cells
10/28/2004DE10306314B3 Production of conducting structure in substrate for producing semiconductor component comprises forming trench with side walls and base in the substrate, forming initial layer on the substrate, and further processing
10/28/2004DE10295893T5 Verfahren zur Herstellung von Halbleiterchips A process for producing semiconductor chips
10/28/2004DE10240115B4 Verfahren und System zum Handhaben von Substraten in einer Produktionslinie mit einer Cluster-Anlage und einer Messanlage Method and system for handling substrates in a production line with a cluster system and a measuring system
10/28/2004DE102004017197A1 Verfahren um eine Halbleitervorrichtung mit Harz einzugiessen, mit Harz eingegossene Halbleitervorrichtung und Druckgießform zum Eingiessen der Halbleitervorrichtung mit Harz Method for a semiconductor device with resin pour, infused with resin semiconductor device and die for pouring the semiconductor device with resin
10/28/2004DE102004017164A1 Verfahren zur Herstellung eines SONOS-Speichers A process for the preparation of a SONOS memory
10/28/2004DE102004014744A1 Halbleiterbaugruppe, die einen Latch-up-Durchbruch infolge einer negativen Änderung einer Floating-Offsetspannung verhindern kann Semiconductor device that can prevent a latch-up due to breakthrough a negative change in a floating offset voltage
10/28/2004DE102004013928A1 Grabenisolation mit dotierter Oxid-Grabenfüllung Grave isolation oxide doped with grave filling
10/28/2004DE102004012241A1 Verfahren zum Füllen von tiefen Grabenstrukturen mit Füllungen ohne Hohlräume Method for filling deep grave structures with fillings without cavities
10/28/2004DE102004011850A1 Beschichtungs- und Bearbeitungsvorrichtung und Verfahren Coating and processing apparatus and method
10/28/2004DE102004009141A1 Dynamic random access memory cell sets width of self aligned contact regions formed between adjacent pass gates and access gates to be larger than width of contact regions formed between adjacent access gates
10/28/2004DE102004007242A1 Grabenkondensator mit vergrabener Kontaktbrücke Grave capacitor with a buried contact bridge
10/28/2004DE102004006774A1 Halbleiterwafer-Bearbeitungsverfahren A semiconductor wafer processing method
10/28/2004DE102004006488A1 Wärmebehandlungseinrichtung und Wärmebehandlungsverfahren Heat treatment device and heat treatment process
10/28/2004CA2773112A1 Metal base circuit board and its production process