Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
12/2004
12/14/2004US6831324 Method of producing rough polysilicon by the use of pulsed plasma chemical vapor deposition and products produced by the same
12/14/2004US6831323 Semiconductor device and method for fabricating the same
12/14/2004US6831322 Semiconductor memory device and method for fabricating the same
12/14/2004US6831321 Semiconductor device with a capacitor electrode isolation film formed from the same layer as a capacitor electrode
12/14/2004US6831320 Memory cell configuration for a DRAM memory with a contact bit terminal for two trench capacitors of different rows
12/14/2004US6831319 Cell nitride nucleation on insulative layers and reduced corner leakage of container capacitors
12/14/2004US6831318 Thin film transistor array
12/14/2004US6831317 System with meshed power and signal buses on cell array
12/14/2004US6831316 Semiconductor memory device and method of manufacturing the same
12/14/2004US6831315 Conformal thin films over textured capacitor electrodes
12/14/2004US6831314 Magnetoresistive effect element and magnetic memory device
12/14/2004US6831313 Ferroelectric composite material, method of making same and memory utilizing same
12/14/2004US6831312 Amorphous alloys for magnetic devices
12/14/2004US6831310 Integrated circuit having multiple memory types and method of formation
12/14/2004US6831307 Semiconductor mounting system
12/14/2004US6831299 Semiconductor device
12/14/2004US6831297 Semiconductor device
12/14/2004US6831296 Device for seating semiconductor device in semiconductor test handler
12/14/2004US6831292 Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same
12/14/2004US6831287 Method and apparatus for preventing transfer of an object having wrong dimensions or orientation
12/14/2004US6831285 Lithographic apparatus, magnetic support for use therein, device manufacturing method, and device manufactured thereby
12/14/2004US6831281 Methods and devices for detecting and canceling magnetic fields external to a charged-particle-beam (CPB) optical system, and CPB microlithography apparatus and methods comprising same
12/14/2004US6831278 System and method for electron beam irradiation
12/14/2004US6831260 Electron beam exposure apparatus, reduction projection system, and device manufacturing method
12/14/2004US6831258 Heating device, method for evaluating heating device and pattern forming method
12/14/2004US6831132 Useful as adhesives in microelectronics industry; film adhesives may be used to produce microelectronic assemblies with very thin bond lines without compromising adhesive strength
12/14/2004US6831048 Detergent composition
12/14/2004US6831021 Plasma method and apparatus for processing a substrate
12/14/2004US6831020 Method for fabricating semiconductor device
12/14/2004US6831019 Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes
12/14/2004US6831018 Method for fabricating semiconductor device
12/14/2004US6831017 Catalyst patterning for nanowire devices
12/14/2004US6831016 Method to prevent electrical shorts between adjacent metal lines
12/14/2004US6831015 Fabrication method of semiconductor device and abrasive liquid used therein
12/14/2004US6831014 Method of manufacturing a semiconductor apparatus using chemical mechanical polishing
12/14/2004US6831013 Method of forming a dual damascene via by using a metal hard mask layer
12/14/2004US6831012 Method for forming a silicide film of a semiconductor device
12/14/2004US6831010 Method and depositing a layer
12/14/2004US6831008 Nickel silicide—silicon nitride adhesion through surface passivation
12/14/2004US6831007 Method for forming metal line of Al/Cu structure
12/14/2004US6831006 Structure and method for eliminating metal contact to P-well or N-well shorts or high leakage paths using polysilicon liner
12/14/2004US6831005 Electron beam process during damascene processing
12/14/2004US6831004 Formation of boride barrier layers using chemisorption techniques
12/14/2004US6831003 Continuous barrier for interconnect structure formed in porous dielectric material with minimized electromigration
12/14/2004US6831002 Manufacturing method of semiconductor device
12/14/2004US6831001 Method of fabricating a stacked local interconnect structure
12/14/2004US6831000 Semiconductor device manufacturing method
12/14/2004US6830999 Method of fabricating flip chip semiconductor device utilizing polymer layer for reducing thermal expansion coefficient differential
12/14/2004US6830998 Gate dielectric quality for replacement metal gate transistors
12/14/2004US6830997 Semiconductor devices and methods for forming semiconductor devices
12/14/2004US6830996 Device performance improvement by heavily doped pre-gate and post polysilicon gate clean
12/14/2004US6830995 Method of diffusing zinc into article and method of heating article
12/14/2004US6830994 Method of manufacturing a semiconductor device having a crystallized semiconductor film
12/14/2004US6830993 Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method
12/14/2004US6830991 Method of manufacturing a semiconductor device including a gettering operation
12/14/2004US6830990 Method and apparatus for dicing released MEMS wafers
12/14/2004US6830989 Method and apparatus for handling arrayed part
12/14/2004US6830988 Method of forming an isolation structure for an integrated circuit utilizing grown and deposited oxide
12/14/2004US6830987 Semiconductor device with a silicon-on-void structure and method of making the same
12/14/2004US6830986 SOI semiconductor device having gettering layer and method for producing the same
12/14/2004US6830985 Method and apparatus for producing bonded dielectric separation wafer
12/14/2004US6830984 Thick traces from multiple damascene layers
12/14/2004US6830983 Method of making an oxygen diffusion barrier for semiconductor devices using platinum, rhodium, or iridium stuffed with silicon oxide
12/14/2004US6830982 Method for reducing extrinsic base resistance and improving manufacturability in an NPN transistor
12/14/2004US6830981 Vertical nanotube transistor and process for fabricating the same
12/14/2004US6830980 Semiconductor device fabrication methods for inhibiting carbon out-diffusion in wafers having carbon-containing regions
12/14/2004US6830979 Method for fabricating semiconductor device
12/14/2004US6830978 Semiconductor device and manufacturing method for the same
12/14/2004US6830977 Methods of forming an isolation trench in a semiconductor, methods of forming an isolation trench in a surface of a silicon wafer, methods of forming an isolation trench-isolated transistor, trench-isolated transistor, trench isolation structures formed in a semiconductor, memory cells and drams
12/14/2004US6830976 Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
12/14/2004US6830975 Method of forming field effect transistor comprising at least one of a conductive metal or metal compound in electrical connection with transistor gate semiconductor material
12/14/2004US6830974 Method of fabricating a semiconductor device including a tunnel oxide film
12/14/2004US6830973 Nonvolatile semiconductor memory device and method of manufacturing the same
12/14/2004US6830972 Method of forming memory circuitry
12/14/2004US6830971 High K artificial lattices for capacitor applications to use in CU or AL BEOL
12/14/2004US6830970 Inductance and via forming in a monolithic circuit
12/14/2004US6830969 Method for manufacturing semiconductor device and the device thereof
12/14/2004US6830968 Simplified top oxide late process
12/14/2004US6830967 Method for forming CMOS transistor spacers in a BiCMOS process
12/14/2004US6830966 Fully silicided NMOS device for electrostatic discharge protection
12/14/2004US6830965 Semiconductor device and a method of creating the same utilizing metal induced crystallization while suppressing partial solid phase crystallization
12/14/2004US6830964 Method for making semiconductor device including band-engineered superlattice
12/14/2004US6830963 Fully depleted silicon-on-insulator CMOS logic
12/14/2004US6830962 Self-aligned SOI with different crystal orientation using wafer bonding and SIMOX processes
12/14/2004US6830959 Semiconductor die package with semiconductor die having side electrical connection
12/14/2004US6830958 Method of making chip scale package
12/14/2004US6830957 Method of fabricating BGA packages
12/14/2004US6830956 Method for packaging a low profile semiconductor device
12/14/2004US6830955 Semiconductor package and method for manufacturing the same
12/14/2004US6830951 Integrated semiconductor light sensor device and corresponding manufacturing process
12/14/2004US6830949 Method for producing group-III nitride compound semiconductor device
12/14/2004US6830948 Method for producing group III nitride compound semiconductor and group III nitride compound semiconductor device
12/14/2004US6830946 Device transfer method and panel
12/14/2004US6830945 Method for fabricating a non-planar nitride-based heterostructure field effect transistor
12/14/2004US6830942 Method for processing silicon workpieces using hybrid optical thermometer system
12/14/2004US6830941 Method and apparatus for identifying individual die during failure analysis
12/14/2004US6830938 Method for improving retention reliability of ferroelectric RAM
12/14/2004US6830877 Method for forming via and contact holes with deep UV photoresist
12/14/2004US6830870 Acetal protected polymers and photoresists compositions thereof
12/14/2004US6830867 Positive photosensitive composition