Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
02/2014
02/13/2014US20140042427 Gate Insulator Loss Free Etch-Stop Oxide Thin Film Transistor
02/13/2014US20140042393 Graphene and Nanotube/Nanowire Transistor with a Self-Aligned Gate Structure on Transparent Substrates and Method of Making Same
02/13/2014US20140042382 Sidewall diode driving device and memory using same
02/13/2014US20140042016 Low resistivity tungsten pvd with enhanced ionization and rf power coupling
02/13/2014US20140041694 Cleaning solution producing apparatus, cleaning solution producing method, and substrate cleaning apparatus
02/13/2014US20140041689 Substrate processing apparatus and substrate processing method
02/13/2014US20140041685 Substrate cleaning apparatus, substrate cleaning system, substrate cleaning method and memory medium
02/13/2014US20140041581 Single Substrate Processing Head For Particle Removal Using Low Viscosity Fluid
02/13/2014US20140041138 Solar panel autonomous cleaning device
02/13/2014DE112012002182T5 Dünnschicht-Halbleiterstruktur und Verfahren zum Bilden derselben Thin-film semiconductor structure and method of forming same
02/13/2014DE112012002127T5 Verbindungshalbleitersubstrat Compound semiconductor substrate
02/13/2014DE112012002077T5 Halbleitervorrichtung Semiconductor device
02/13/2014DE112012001587T5 Halbleitereinrichtung und Verfahren zur Herstellung derselben A semiconductor device and method of manufacturing the same
02/13/2014DE112010004612B4 Silicium-auf-Isolator(SOI)-Struktur mit verringerten Oberschwingungen und Verfahren zu deren Herstellung Silicon-on-insulator (SOI) structure having reduced harmonics and methods for their preparation
02/13/2014DE112006001791B4 Non-Punch-Through Hochspannungs-IGBT für Schaltnetzteile und Verfahren zur Herstellung derselben Non-punch-through high voltage IGBT for switching power supplies and methods of making same
02/13/2014DE10229003B4 Ein Verfahren zur Herstellung eines SOI-Feldeffekttransistorelements mit einem Rekombinationsgebiet A method of manufacturing an SOI type field effect transistor element with a Rekombinationsgebiet
02/13/2014DE102013221822A1 Method for manufacturing chips, involves providing back metal stack on laser absorption layer, irradiating laser absorption layer with laser light along dividing lines, and separating chips along dividing lines using covered division
02/13/2014DE102013215771A1 Kontakthöckerverbindung sowie Kontakthöcker und Verfahren zur Herstellung einer Kontakthöckerverbindung Contact bump bonding and contact bumps and processes for making a contact bump bonding
02/13/2014DE102013214441A1 Verfahren zur Verringerung der Benetzbarkeit von Verbindungsmaterial an Eckberührungsflächen und eine gemäß dem Verfahren hergestellte Vorrichtung A method of reducing the wettability of bonding material to Eckberührungsflächen and a device produced according to the method
02/13/2014DE102013214440A1 Reparieren von anomal festen Säulenhöckern Repair of anomalous solid pillars bumps
02/13/2014DE102013214439A1 Erfassen von anomal starren Säulenhöckern, die über einem Metallisierungssystem gebildet sind Detecting abnormally rigid columns bumps are formed over a metallization
02/13/2014DE102013202739A1 SRAM-integrierte Schaltungen mit vergrabenem sattelförmigen FINFET und Verfahren zu deren Herstellung SRAM integrated circuits with buried saddle-shaped FinFET and processes for their preparation
02/13/2014DE102013108707A1 Halbleitervorrichtung und Verfahren zu ihrer Herstellung Semiconductor device and process for their preparation
02/13/2014DE102013108698A1 III-Nitrid-Vorrichtung mit hoher Durchbruchspannung III-nitride device with a high breakdown voltage
02/13/2014DE102013108675A1 Halbleitervorrichtung und verfahren zur herstellung einer halbleitervorrichtung einschliesslich schleifen von einer rückseite Semiconductor device and method for manufacturing a semiconductor device including a grind back
02/13/2014DE102013108614A1 Halbleitervorrichtung und Verfahren zum Herstellen derselben A semiconductor device and method of manufacturing the same
02/13/2014DE102013108572A1 Polysiliziumdioden-Bandlückenreferenz Polysilicon diode bandgap reference
02/13/2014DE102013108473A1 Halbleitervorrichtung mit einem graben in einem halbleitersubstrat und verfahren zur herstellung einer halbleitervorrichtung A semiconductor device comprising a trench in a semiconductor substrate and process for producing a semiconductor device
02/13/2014DE102013108354A1 Elektronikbauelement und Verfahren zum Herstellen eines Elektronikbauelements An electronics device and method for manufacturing an electronic device
02/13/2014DE102013108282A1 Kondensatoranordnungen und Verfahren zum Herstellen einer Kondensatoranordnung Capacitor assemblies and method of making a capacitor assembly
02/13/2014DE102013105608B3 Integrated circuit (IC) structure for use in e.g. microprocessor, has continuous metallic portion that is formed between gate contact and metal
02/13/2014DE102012217336B4 Verfahren zum Ersetzen von Halbleitermaterial durch Metall bei der Herstellung von Chips mit integrierten Schaltungen A method for replacing semiconductor material by metal in the manufacture of integrated circuit chips
02/13/2014DE102012214325A1 Verfahren zum Herstellen eines optoelektronischen Bauelementes und Verfahren zum Strukturieren eines organischen, optoelektronischen Bauelementes A method for producing an optoelectronic component and method of patterning an organic optoelectronic component
02/13/2014DE102012214316A1 Halterung für eine Vielzahl von scheibenförmigen Werkstücken Holder for a plurality of disk-shaped workpieces
02/13/2014DE102012110654A1 Package-on-Package-Struktur mit geringen Abständen Package-on-package structure at short distances
02/13/2014DE102012109986A1 Siliziumsubstrat und Verfahren zu dessen Herstellung Silicon substrate and process for its preparation
02/13/2014DE102012020149A1 Method for manufacturing e.g. thin layer sensor used in elongation measurement device, involves annealing defects of insulation layer by applying voltage between substrate and work structure so that defects in work structure is removed
02/13/2014DE102011056633B4 Verfahren zum Reinigen eines Filters A method of cleaning a filter
02/13/2014DE102011013982A1 Verfahren zum chemisch-mechanischen Polieren eines Substrats mit einer Polierzusammensetzung, die zur Erhöhung der Siliziumoxidentfernung angepasst ist. A method for chemical mechanical polishing of a substrate with a polishing composition which is adapted to increase the Siliziumoxidentfernung.
02/13/2014DE102011013981A1 Verfahren zum Polieren eines Substrats, das Polysilizium, Siliziumoxid und Siliziumnitrid umfasst Includes methods for polishing a substrate, the polysilicon, silicon oxide and silicon nitride,
02/13/2014DE102011013979A1 Verfahren zum Polieren eines Substrats, das Polysilizium und mindestens eines von Siliziumoxid und Siliziumnitrid umfasst Includes methods for polishing a substrate, the polysilicon and at least one of silicon oxide and silicon nitride,
02/13/2014DE102011013978A1 Verfahren zum Polieren eines Substrats, das Polysilizium und mindestens eines von Siliziumnitrid umfasst Includes methods for polishing a substrate, the polysilicon and silicon nitride of at least one of
02/13/2014DE102011004155B4 Verfahren und Gerät zum Abziehen eines Schutzbandes Method and apparatus for peeling a protective tape
02/13/2014DE102010029290B4 Optische Empfängerstruktur und Verfahren zum Herstellen derselben Optical receiver structure and method of manufacturing the same
02/13/2014DE102010011269B4 Verfahren zum Abscheiden einer für das Drahtbonden geeigneten Palladiumschicht auf Leiterbahnen einer Schaltungsträgerplatte und Verwendung eines Palladiumbades in dem Verfahren A method for depositing a position suitable for wire bonding palladium layer on conductor paths of a circuit board and using a palladium bath in the process
02/13/2014DE102010006269B4 Verfahren zur Erzeugung leitender oder halbleitender metalloxidischer Schichten auf Substraten, auf diese Weise hergestellte Substrate und deren Verwendung A method for producing conductive or semi-conductive metal-oxide layers on substrates, the substrates thus produced and their use
02/13/2014DE102009044639B4 Bauelement mit einem Halbleiterchip und Verfahren zur Herstellung eines Moduls mit gestapelten Bauelementen Component having a semiconductor chip and method of manufacturing a module with stacked components
02/13/2014DE102009029692B4 Robustes Leistungshalbleiterbauelement Robust power semiconductor component
02/13/2014DE102009014067B4 Plasmabearbeitungsvorrichtung The plasma processing apparatus
02/13/2014DE102008045614B4 Kontaktierung eines halbleiterbauelements oder halbleitermoduls mit einem vorgespannten drahtbauteil und verfahren zur kontaktierung Contacting a semiconductor component or semiconductor module with a prestressed wire member and method for contacting
02/13/2014DE102008012570B4 Leistungshalbleitermodul-System, Leistungshalbleitermodulanordnung und Verfahren zur Herstellung einer Leistungshalbleitermodulanordnung Power semiconductor module system, the power semiconductor module assembly and method of manufacturing a power semiconductor module assembly
02/13/2014DE102008007603B4 Verfahren und Vorrichtung zur besseren Ausnutzung von Halbleitermaterial Method and apparatus for improved utilization of semiconductor material
02/13/2014DE102006010761B4 Halbleitermodul Semiconductor module
02/13/2014DE102006008503B4 Verfahren zur Herstellung von nichtflüchtigen Speicherzellen Process for the preparation of non-volatile memory cells
02/13/2014DE102005053718B4 Floating-Gate-Speicherzelle und Verfahren zum Herstellen einer Floating-Gate-Speicherzelle Floating gate memory cell and method for fabricating a floating gate memory cell
02/13/2014DE102004053329B4 Bearbeitungsvorrichtung unter Verwendung eines Laserstrahls Machining apparatus using a laser beam
02/13/2014DE102004043233B4 Verfahren zum Herstellen eines beweglichen Abschnitts einer Halbleitervorrichtung A method of manufacturing a movable portion of a semiconductor device
02/13/2014DE102004030056B4 Ausgeformte Halbleitervorrichtung Lofted semiconductor device
02/13/2014DE10195494B4 Halbleiterbauteil und Verfahren zu dessen Herstellung Semiconductor device and process for its preparation
02/12/2014EP2696369A1 Methods for manufacturing a field-effect semiconductor device
02/12/2014EP2696368A1 Silicon carbide semiconductor device
02/12/2014EP2696366A2 Device having reduced bias temperature instability (bti)
02/12/2014EP2696365A2 Semiconductor buffer structure, semiconductor device including the same, and method of manufacturing semiconductor device using semiconductor buffer structure
02/12/2014EP2695835A1 Board-like-member inverting system, and inversion transfer method employed in same
02/12/2014EP2695715A1 Device module and method of manufacturing the same
02/12/2014EP2695255A2 Diode-laser illuminator with interchangeable modules for changing irradiance and beam dimensions
02/12/2014EP2695194A1 Process for catalyst-free selective growth on a semiconductor structure
02/12/2014EP2695193A1 Bipolar punch-through semiconductor device and method for manufacturing such a semiconductor device
02/12/2014EP2695192A1 Induced thermal gradients
02/12/2014EP2695187A2 Reusable substrates for electronic device fabrication and methods thereof
02/12/2014EP2695186A1 Heterogeneous integration of group iii-v or ii-vi materials with silicon or germanium
02/12/2014EP2695185A1 Controlling impurities in a wafer for an electronic circuit
02/12/2014EP2695184A1 Processing a wafer for an electronic circuit
02/12/2014EP2695183A1 Method for permanently bonding wafers
02/12/2014EP2695182A1 Method for permanently bonding wafers
02/12/2014EP2695181A1 Method for permanently bonding wafers
02/12/2014EP2695180A1 Method for producing a iii/v si template
02/12/2014EP2694944A1 Measurement apparatus and method
02/12/2014EP2694706A1 Apparatus and method for crystal growth
02/12/2014EP2694699A1 Method for depositing one or more polycrystalline silicon layers on substrate
02/12/2014CN203434138U 静电卡盘 The electrostatic chuck
02/12/2014CN203434137U 真空吸嘴 Vacuum nozzle
02/12/2014CN203434136U Needle lifting mechanism and lifting device
02/12/2014CN203434135U Crystal box transmission device
02/12/2014CN203434134U Substrate conveying device
02/12/2014CN203434133U Aluminum strip having deep holes
02/12/2014CN203434132U Taper hole graphite plate
02/12/2014CN203434131U Chip positioning module
02/12/2014CN203434130U Packaging device
02/12/2014CN203434124U Ion beam measurement guiding device used for ion implanter
02/12/2014CN203426124U Washing equipment
02/12/2014CN1994841B Substrate convey device and substrate support
02/12/2014CN103583084A Light-emitting element, transistor, and partition wall
02/12/2014CN103582953A 氧化物型半导体材料及溅镀靶 Oxide semiconductor material and a sputtering target
02/12/2014CN103582951A GaN HEMT with a back gate connected to the source
02/12/2014CN103582950A Semiconductor device and method of manufacturing same
02/12/2014CN103582947A Switching device having a non-linear element
02/12/2014CN103582944A Conductive structures, systems and devices including conductive structures and related methods
02/12/2014CN103582943A Multi-step and asymmetrically shaped laser beam scribing
02/12/2014CN103582942A Method for forming a vertical electrical connection in a layered semiconductor structure
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