Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
02/2014
02/12/2014CN103582941A Apparatus and methods for supporting and controlling a substrate
02/12/2014CN103582940A Method and device for bonding two wafers
02/12/2014CN103582939A 氮化物半导体装置 The nitride semiconductor device
02/12/2014CN103582938A Nitride electronic device and method for manufacturing nitride electronic device
02/12/2014CN103582937A Semiconductor device manufacturing method, and semiconductor device
02/12/2014CN103582936A Semiconductor device and method for producing semiconductor device
02/12/2014CN103582935A Multi-layer mask for substrate dicing by laser by laser and plasma etch
02/12/2014CN103582934A Low-temperature methods for spontaneous material spalling
02/12/2014CN103582933A Semiconductor constructions having through-substrate interconnects, and methods of forming through-substrate interconnects
02/12/2014CN103582932A Metal and silicon containing capping layers for interconnects
02/12/2014CN103582931A Pulse circulator
02/12/2014CN103582930A MOSFET with recessed channel film and abrupt junction
02/12/2014CN103582847A Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method for manufacturing electronic device, and electronic device
02/12/2014CN103582723A SiC single crystal and method for manufacturing same, SiC wafer, and semiconductor device
02/12/2014CN103582718A Organic ruthenium compound for chemical vapor deposition raw material and production method for said organic ruthenium compound
02/12/2014CN103582563A Method for producing chip having water-repellent front surface and hydrophilic back surface
02/12/2014CN103579412A Method of diffusing impurity-diffusing component and method of manufacturing solar cell
02/12/2014CN103579375A SiC Schottky diode and manufacturing method thereof
02/12/2014CN103579373A Channel structure charge compensation Schottky semiconductor device and manufacturing method thereof
02/12/2014CN103579372A Schottky potential barrier diode and manufacturing method thereof
02/12/2014CN103579371A Channel terminal structure Schottky device and manufacturing method thereof
02/12/2014CN103579370A Charge compensation semiconductor junction device with chemical matching mismatching insulating materials and manufacturing method thereof
02/12/2014CN103579369A Schottky transient voltage restraint diode and preparation method thereof
02/12/2014CN103579368A Groove schottky semiconductor device and preparation method thereof
02/12/2014CN103579367A Fast recovery diode chip of low-concentration doped emitter region and manufacturing method thereof
02/12/2014CN103579366A TVS device and manufacturing method
02/12/2014CN103579362A 半导体装置及其制作方法 Semiconductor device and manufacturing method thereof
02/12/2014CN103579361A Metal-oxide semiconductor thin film transistor and manufacturing method thereof
02/12/2014CN103579360A Oxide semiconductor target and oxide semiconductor material and semiconductor device
02/12/2014CN103579358A Display panel, thin film transistor and method of fabricating the same
02/12/2014CN103579356A Oxide TFT, manufacturing method of oxide TFT, display panel and display device
02/12/2014CN103579355A Thin film transistor substrate, thin film transistor substrate manufacturing method and display including thin film transistor substrate
02/12/2014CN103579350A Grapheme field-effect transistor and forming method thereof
02/12/2014CN103579348A Semiconductor device and manufactruing method of the same
02/12/2014CN103579347A Semiconductor device and manufacturing method of semiconductor device
02/12/2014CN103579346A Termination structure designed for high voltage balance metallic oxide field effect transistor and preparation method thereof
02/12/2014CN103579345A High voltage field balance metal oxide field effect transistor (FBM)
02/12/2014CN103579343A Super-junction trench mosfet and manufacturing method thereof
02/12/2014CN103579342A Semiconductor device and fabrication method thereof
02/12/2014CN103579341A Transistor and method for manufacturing same
02/12/2014CN103579340A Gate electrode of field effect transistor
02/12/2014CN103579338A Semiconductor and manufacturing method thereof
02/12/2014CN103579337A Semiconductor component and forming method thereof
02/12/2014CN103579336A Floating charge compensation MOS semiconductor device and manufacturing method thereof
02/12/2014CN103579335A Multi-grid field effect transistor and manufacturing technology thereof
02/12/2014CN103579334A Semiconductor device and manufacturing method thereof
02/12/2014CN103579332A Heterojunction field-effect transistor and manufacturing method thereof
02/12/2014CN103579331A Nitride-based semiconductor device and method of manufacturing same
02/12/2014CN103579330A Nitride-based semiconductor device and manufacturing method thereof
02/12/2014CN103579329A High electron mobility transistors and methods of manufacturing the same
02/12/2014CN103579328A 高电子迁移率晶体管及其制造方法 High electron mobility transistor and manufacturing method thereof
02/12/2014CN103579327A High electron mobility transistor and method of forming the same
02/12/2014CN103579325A Semiconductor device including a trench in a semiconductor substrate and method of manufacturing a semiconductor device
02/12/2014CN103579324A Three-face-source tunneling field effect transistor and manufacturing method thereof
02/12/2014CN103579322A IGBT device capable of improving switch-on and switch-off speed and switch-on and switch-off uniformity and manufacturing method thereof
02/12/2014CN103579320A Groove type grid and manufacturing method
02/12/2014CN103579319A Laminated structure, semiconductor device and manufacturing method thereof
02/12/2014CN103579318A Multiple-grid transistor and manufacturing method thereof
02/12/2014CN103579317A Gate structure and manufacturing method
02/12/2014CN103579316A Semiconductor element, integrated circuit, manufacturing method of semiconductor element and integrated circuit and electronic device
02/12/2014CN103579315A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
02/12/2014CN103579314A Semiconductor device and manufacturing method thereof
02/12/2014CN103579312A Device with self-aligned contact hole and silicide and manufacturing method thereof
02/12/2014CN103579310A Transistors and methods of manufacturing the same
02/12/2014CN103579308A Mos晶体管器件及其制造方法 Mos transistor device and method of manufacturing
02/12/2014CN103579305A Metal channel coupling capacitance removing structure and formation method thereof
02/12/2014CN103579304A Semiconductor device including stress relief layer and method of manufacturing
02/12/2014CN103579303A Semiconductor device and manufacturing method of same
02/12/2014CN103579302A Semiconductor device and method for reduced bias temperature instability (bti) in silicon carbide devices
02/12/2014CN103579301A Corner layout for high voltage semiconductor devices
02/12/2014CN103579300A Semiconductor device and method for manufacturing same
02/12/2014CN103579299A 高电子迁移率晶体管及其制造方法 High electron mobility transistor and manufacturing method thereof
02/12/2014CN103579298A Field element of high-voltage semiconductor element
02/12/2014CN103579296A 半导体装置及其制造方法 Semiconductor device and manufacturing method
02/12/2014CN103579295A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
02/12/2014CN103579294A OLED (organic light-emitting diode) display part packaging structure and packaging method
02/12/2014CN103579291A Display device and manufacturing method of the same
02/12/2014CN103579285A Organic light-emitting display device and method of manufacturing the same
02/12/2014CN103579270A Image sensor, imaging apparatus, and apparatus and method for manufacturing image sensor
02/12/2014CN103579257A Array substrate, manufacturing method of array substrate and display device
02/12/2014CN103579255A 存储单元及其形成方法 Storage unit and method of forming
02/12/2014CN103579254A Metal nano particle single layer
02/12/2014CN103579253A Semiconductor memory device and method of manufacturing the same
02/12/2014CN103579252A Nonvolatile memory device and method for fabricating the same
02/12/2014CN103579251A Nonvolatile memory device and method for fabricating the same
02/12/2014CN103579250A Semiconductor device and method of manufacturing the same
02/12/2014CN103579249A 半导体存储器件及其制造方法 The semiconductor memory device and manufacturing method thereof
02/12/2014CN103579248A Semiconductor structure, manufacturing method for semiconductor structure and operating method for semiconductor structure
02/12/2014CN103579247A Nonvolatile memory and operation method and manufacturing method thereof
02/12/2014CN103579246A Otp memory cell and fabricating method thereof
02/12/2014CN103579245A Static random access memory in hybrid orientation technology and method for improving write margin
02/12/2014CN103579244A Static random access memory and method for improving writing-in redundancy rate of static random access memory
02/12/2014CN103579243A Static random access memory in embedded germanium silicon process and write-in redundancy improving method
02/12/2014CN103579242A SRAM integrated circuits with buried saddle-shaped finfet and methods for their fabrication
02/12/2014CN103579240A Circuit pattern with high aspect ratio and method of manufacturing same
02/12/2014CN103579239A Memory device and method of manufacturing memory structure
02/12/2014CN103579236A Lateral semiconductor device and manufacturing method therefor
02/12/2014CN103579235A A device with a vertical gate structure
02/12/2014CN103579234A Semiconductor structure and manufacturing method thereof
02/12/2014CN103579233A Semiconductor device and method for manufacturing a semiconductor device