Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
02/2007
02/01/2007DE202006015530U1 Wafer test unit has base plate with test circuit and groups of electrically conductive springs to contact the wafer
02/01/2007DE202005014918U1 Vorrichtung zum Temperieren eines Substrats Apparatus for controlling the temperature of a substrate
02/01/2007DE19946999B4 Verfahren zur Herstellung ferroelektrischer Speichereinrichtungen Process for the preparation of ferroelectric memory devices
02/01/2007DE19908809B4 Verfahren zur Herstellung einer MOS-Transistorstruktur mit einstellbarer Schwellspannung A method of manufacturing a MOS transistor structure with an adjustable threshold voltage
02/01/2007DE19860962B4 Semiconductor device e.g. power semiconductor with trench MOS gate
02/01/2007DE19844882B4 Vorrichtung zur Plasma-Prozessierung mit In-Situ-Überwachung und In-Situ-Überwachungsverfahren für eine solche Vorrichtung An apparatus for plasma processing with in-situ monitoring and in-situ monitoring method for such a device
02/01/2007DE19648475B4 Kontaktstruktur, Prüfkarten und Herstellungsverfahren Contact structure, test cards and manufacturing processes
02/01/2007DE112005000548T5 Verfahren zur Unterstützung der Maskenherstellung, Verfahren zur Bereitstellung von Maskenrohlingen und Verfahren zur Handhabung von Maskenrohlingen A method for supporting the mask fabrication, method of providing mask blanks and methods of handling mask blanks
02/01/2007DE112004002798T5 Verfahren zum Herstellen einer Halbleitervorrichtung A method of manufacturing a semiconductor device
02/01/2007DE112004002638T5 Seitenwandabstandshalter mit geringer Verspannung in integrierter Schaltungstechnologie Sidewall spacers with less stress in integrated circuit technology
02/01/2007DE112004002199T5 Verfahren zur Herstellung einer Extrem-Ultraviolettstrahlung reflektierenden Maske unter Verwendung von Rasterkraftmikroskop-Lithographie A process for producing extreme ultra-violet radiation of a reflective mask using atomic force microscope lithography
02/01/2007DE112004002162T5 Verfahren zur Herstellung eines Halbleiterchips A process for producing a semiconductor chip
02/01/2007DE10326352B4 Vorrichtung mit einer Elektrode für die Bildung einer Kugel am Ende eines Drahtes Device with an electrode for forming a ball at the end of a wire
02/01/2007DE10320598B4 Verfahren zum Herstellen eines Transistors mit einen flachen Implantierung durch Verwendung eines zweistufigen Epitaxialschichtprozesses A method for manufacturing a transistor with a shallow implantation by using a two-stage Epitaxialschichtprozesses
02/01/2007DE10243947B4 Elektronisches Bauteil mit wenigstens einem Halbleiterschip und Verfahren zu seiner Herstellung Electronic component with at least one semiconductor chip and process for its preparation
02/01/2007DE10243559B4 Photolithographie-Belichtungsvorrichtung und Photolithographie-Belichtungsverfahren Photolithography exposure apparatus and photolithography exposure method
02/01/2007DE10237042B4 Zusammensetzung und Verfahren zur Resistentfernung Composition and method for resist removal
02/01/2007DE10214066B4 Halbleiterbauelement mit retrogradem Dotierprofil in einem Kanalgebiet und Verfahren zur Herstellung desselben Of the same semiconductor device with a retrograde doping profile in a channel region and methods for preparing
02/01/2007DE10213285B4 Verfahren zur Steuerung eines fotolithografischen Gerätes A method for controlling a photolithographic device
02/01/2007DE102006034263A1 Non-volatile memory cell, e.g. for smart cards and mobile phones, has spacings between cell gate structure and selection lines made less than width of selection lines
02/01/2007DE102006030647A1 Direkter Kanalstress Direct channel stress
02/01/2007DE102006024653A1 Verfahren zur Herstellung eines Bildsensors A method for manufacturing an image sensor
02/01/2007DE102005051812A1 Device for etching layers on semiconductor wafers, uses spectrometer for measurement of etching medium concentration
02/01/2007DE102005039351A1 Nicht-flüchtige Speicherzellen und Verfahren zur Herstellung von nicht-flüchtigen Speicherzellen sowie NAND-Speicher und Verfahren zur Herstellung eines nicht-flüchtigen NAND-Speichers Non-volatile memory cells and methods for the preparation of non-volatile memory cells, and the NAND memory and method of manufacturing a non-volatile NAND memory
02/01/2007DE102005035772A1 Contact layer production with contact bumps, e.g. for manufacture of integrated circuits, involves dry-etching process for structuring bump bottom-face metallization layer stack
02/01/2007DE102005035771A1 Semiconductor component for integrated circuits, has bump bottom-face metallization layer formed on copper-containing contact surface
02/01/2007DE102005035255A1 Ätzmedien für oxidische, transparente, leitfähige Schichten Etching media for oxidic, transparent, conductive layers
02/01/2007DE102005035153A1 Semiconductor component e.g. power transistor, has drift zone, and drift control zone made of semiconductor material and arranged adjacent to drift zone in body, where accumulation dielectric is arranged between zones
02/01/2007DE102005035057A1 Semiconductor arrangement production involves initially providing support substrate and function region
02/01/2007DE102005035031A1 Device for testing integrated semiconductor circuits on wafers, includes nozzle for spraying purging gas on to surface of wafers
02/01/2007DE102005034485A1 Verbindungselement für ein Halbleiterbauelement und Verfahren zu dessen Herstellung Connecting element for a semiconductor device and process for its preparation
02/01/2007DE102005034120A1 Halbleiterscheibe und Verfahren zur Herstellung einer Halbleiterscheibe Semiconductor wafer and method for manufacturing a semiconductor wafer
02/01/2007DE102005034011A1 Halbleiterbauteil für Hochfrequenzen über 10 GHz und Verfahren zur Herstellung desselben Of the same semiconductor device for high frequencies exceeding 10 GHz and methods for preparing
02/01/2007DE102005033469A1 Halbleitersubstrat, Verfahren zu dessen Herstellung sowie Verfahren zum Herstellen eines Schaltungsmoduls Semiconductor substrate, a process for its preparation and method of manufacturing a circuit module
02/01/2007DE102005026408B3 Verfahren zur Herstellung einer Stoppzone in einem Halbleiterkörper und Halbleiterbauelement mit einer Stoppzone A process for producing a stop zone in a semiconductor body and the semiconductor device having a stop zone
02/01/2007DE102005023882B3 High speed diode contain vertically arranged seqeuntial heavily doped N-zones and weakly doped P-zone in semiconductor body starting from its rear side
02/01/2007DE102005021586B3 Semiconductor chip tested for intact flanks and edges, includes electronic test circuit integrated into semiconductor chip
02/01/2007DE102005011652A1 Semiconductor component production, especially for power semiconductor technology, requires forming through-apertures in masking layer at regions over identified contact surfaces
02/01/2007DE102004055616B4 Verfahren zum Verbinden einer Modulbrücke mit einem Substrat und mehrschichtiger Transponder Method for connecting a bridge module comprising a substrate and multilayered transponder
02/01/2007DE102004033148B4 Verfahren zum Herstellen einer Schicht-Anordnung und Schicht-Anordnung zur Verwendung als Doppelgate-Feldeffekttransistor A method for producing a layer arrangement and layer arrangement for use as a dual gate field effect transistor
02/01/2007DE102004024649B4 Justiereinrichtung und Vorrichtung zum Justieren eines Wafers And adjusting device for adjusting a wafer
02/01/2007DE102004001956B4 Umverdrahtungssubstratstreifen mit mehreren Halbleiterbauteilpositionen Rewiring substrate having a plurality of semiconductor component positions
02/01/2007DE10148120B4 Elektronische Bauteile mit Halbleiterchips und ein Systemträger mit Bauteilpositionen sowie Verfahren zur Herstellung eines Systemträgers Electronic components with semiconductor chip and a system carrier with component positions and to processes for the preparation of a leadframe
02/01/2007DE10143938B4 Polierkopf für einen Wafer und Polierverfahren unter Verwendung desselben The same polishing head for a wafer and polishing method using
02/01/2007DE10004200B4 Transistorvorrichtung mit MOS-Struktur, in der eine Änderung der Ausgangsimpedanz aufgrund eines Herstellungsfehlers reduziert ist, Verfahren zu deren Herstellung sowie hierdurch ausgebildete CMOS-Schaltung Transistor device having the MOS structure, in which a change of the output impedance is reduced due to a manufacturing error, process for their preparation and thereby formed CMOS circuit
01/2007
01/31/2007EP1748687A1 Power supply circuit for plasma generation, plasma generating apparatus, plasma processing apparatus and plasma-processed object
01/31/2007EP1748497A2 Silicon carbon germanium (SiCGe) substrate for a group III nitride-based device
01/31/2007EP1748492A1 Semiconductor device and semiconductor device manufacturing method
01/31/2007EP1748482A1 Semiconductor manufacturing method and semiconductor device
01/31/2007EP1748481A1 Wafer storage container
01/31/2007EP1748480A1 Connection structure for attaching a semiconductor chip to a metal substrate, semiconductor chip and electronic component including the connection structure and methods for producing the connection structure
01/31/2007EP1748479A2 Method of making an electronic assembly
01/31/2007EP1748478A2 Self-assembled interconnection particles
01/31/2007EP1748477A2 Patterned-print thin-film transistors with top gate geometry
01/31/2007EP1748476A1 Electrode pad on conductive semiconductor substrate
01/31/2007EP1748475A2 Etching method and etching apparatus
01/31/2007EP1748474A1 Laser processing method and semiconductor chip
01/31/2007EP1748473A2 Non-volatile memory transistor with distributed charge storage sites
01/31/2007EP1748472A1 Non-volatile memory transistor
01/31/2007EP1748471A1 Laser heat treatment apparatus
01/31/2007EP1748470A1 Iii nitride semiconductor crystal and manufacturing method thereof, iii nitride semiconductor device and manufacturing method thereof, and light emitting device
01/31/2007EP1748469A1 Liquid for immersion exposure and immersion exposure method
01/31/2007EP1748468A2 Film separation method and film separation apparatus
01/31/2007EP1748466A1 Wafer surface cleaning device
01/31/2007EP1747884A2 Positive photosensitive lithographic printing plate
01/31/2007EP1747849A1 Composition for polishing
01/31/2007EP1747706A2 Support with solder globule elements and a method for assembly of substrates with globule contacts
01/31/2007EP1747592A1 Non-volatile transistor memory array incorporating read-only elements with single mask set
01/31/2007EP1747590A2 Photovoltaic thin-film cell produced from metallic blend using high-temperature printing
01/31/2007EP1747589A1 Methods of fabricating nitride-based transistors having regrown ohmic contact regions and nitride-based transistors having regrown ohmic contact regions
01/31/2007EP1747582A2 Low-voltage single-layer polysilicon eeprom memory cell
01/31/2007EP1747581A1 Formation of a silicon oxynitride layer on a high-k dielectric material
01/31/2007EP1747580A1 Stabilization of high-k dielectric materials
01/31/2007EP1747579A1 Implanted counted dopant ions
01/31/2007EP1747578A1 Method for forming organic light-emitting layer
01/31/2007EP1747577A2 Systems and methods for nanowire growth and harvesting
01/31/2007EP1747576A2 Capillary lithography of nanofiber arrays
01/31/2007EP1747575A2 Inter-process sensing of wafer outcome
01/31/2007EP1747169A1 Vent closing method and the use of an ultrasonic bonding machine for carrying out said method
01/31/2007EP1586008A4 Binary half tone photomasks and microscopic three-dimensional devices and method of fabricating the same
01/31/2007EP1490897B1 Tantalum barrier removal solution
01/31/2007EP1465242B1 Semiconductor wafer and method for producing the same
01/31/2007EP1221175B1 Electric supply unit and a method for reducing sparking during sputtering
01/31/2007EP1082756B1 Method and device for transferring wafers
01/31/2007EP0809284B1 Method and system for transporting substrate wafers
01/31/2007CN2864993Y Photoelectric chip double-chip type base material packaging structure with control chip
01/31/2007CN2864981Y Precise vacuum cutting chuck
01/31/2007CN1906769A Vertical fin-fet mos devices
01/31/2007CN1906768A Semiconductor device and method for manufacturing same
01/31/2007CN1906767A Semiconductor device and method for manufacturing same
01/31/2007CN1906765A Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof
01/31/2007CN1906764A Gradient deposition of low-k cvd materials
01/31/2007CN1906761A Driver chip and display apparatus
01/31/2007CN1906756A Pillar cell flash memory technology
01/31/2007CN1906755A Semiconductor manufacturing method and semiconductor device
01/31/2007CN1906754A Programmable logic device and its designing method
01/31/2007CN1906753A System and method for surface reduction, passivation, corrosion prevention and activation of copper surface
01/31/2007CN1906752A Stress free etch processing in combination with a dynamic liquid meniscus
01/31/2007CN1906751A System and method for stress free conductor removal
01/31/2007CN1906750A Substrate processing apparatus and substrate processing method