Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
10/2008
10/30/2008US20080265237 Phase-Change Memory Cell Having Two Insulated Regions
10/30/2008US20080265235 Nonvolatile semiconductor memory device and manufacturing method thereof
10/30/2008US20080265216 Use as doping agent for doping organic semiconductive matrix material, as blocker material, as charge injection layer, as electrode material as well as organic semiconductor, electronic component; 1,3-Bi(dicyanomethylene)indane-2-ylidene-bis(4-oxo-[3,5-di-t-butyl]-2,5-cyclohexadienylidene)cyclopropane
10/30/2008US20080265173 Microfabricated miniature grids
10/30/2008US20080265168 Radiation sensor element, method for producing a radiation sensor element and sensor field
10/30/2008US20080265159 Sample surface inspection apparatus and method
10/30/2008US20080264905 Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis
10/30/2008US20080264904 Methods to eliminate "m-shape" etch rate profile in inductively coupled plasma reactor
10/30/2008US20080264776 generating a nitrogen plasma with a radio frequency field and a power of less than or equal to 2 kW; and treating the gold film with said nitrogen plasma to from gold nitride film on a silicon wafer substrate; nitriding
10/30/2008US20080264566 Apparatus and method for removing a photoresist structure from a substrate
10/30/2008US20080264565 Method and apparatus which reduce the erosion rate of surfaces exposed to halogen-containing plasmas
10/30/2008US20080264564 Method of reducing the erosion rate of semiconductor processing apparatus exposed to halogen-containing plasmas
10/30/2008US20080264479 Hybrid Photovoltaic Cells and Related Methods
10/30/2008US20080264446 Hot Source Cleaning System
10/30/2008US20080264442 Method of cleaning substrates utilizing megasonic energy
10/30/2008US20080264338 Particle-measuring system and particle-measuring method
10/30/2008US20080264337 Substrate processing apparatus and method for manufacturing semiconductor device
10/30/2008US20080264185 Sensing device and methods for forming and using the same
10/30/2008US20080263965 Semiconductor Polishing Composition
10/30/2008US20080263793 Substrate treatment apparatus
10/30/2008DE20321631U1 Halbleiterbauelement Semiconductor device
10/30/2008DE19956987B4 Verfahren zum Ausbilden einer Gate-Elektrode mit Titan-Polycid-Struktur A method of forming a gate electrode with polycide structure, titanium-
10/30/2008DE19836233B4 Lateraler DMOS-Transistor auf isolierender Unterlage und Verfahren zu seiner Herstellung A lateral DMOS transistor on an insulating substrate and process for its preparation
10/30/2008DE112007000175T5 Feldeffekttransistor Field-effect transistor
10/30/2008DE112006003567T5 Verfahren zum Ausbilden elektrischer Kontakte auf einem Halbleiterwafer unter Verwendung einer Phasenwechsel-Druckfarbe A method of forming electrical contacts on a semiconductor wafer using a phase-change printing ink
10/30/2008DE112006003494T5 Verfahren und Vorrichtung zur Verarbeitung von mehrphotonen-aushärtbaren photoreaktiven Zusammensetzungen Method and apparatus for processing multi-photon-curable photoreactive compositions
10/30/2008DE112006003372T5 Vorrichtung und Verfahren zur Montage eines oben und unten freiliegenden eingehausten Halbleiters Apparatus and method for mounting a top and bottom exposed is housed semiconductor
10/30/2008DE10355682B4 Trägeranordnung Carrier assembly
10/30/2008DE10317748B4 Verfahren zur Überprüfung von Isoliergrabenätzungen in SOI-Scheiben mittels einer Teststruktur Proceedings for review of Isoliergrabenätzungen in SOI wafers by means of a test structure
10/30/2008DE10297264B4 Halbleitervorrichtung und Verfahren zu deren Herstellung Semiconductor device and process for their preparation
10/30/2008DE10208705B4 Monochromatorspiegel für den EUV-Spektralbereich Monochromator for the EUV spectral range
10/30/2008DE102008020140A1 MuGFET mit doppelter Maschenstruktur MuGFET with double mesh structure
10/30/2008DE102008019599A1 Verfahren zur Herstellung eines Bauelementes durch lokales Erwärmen einer oder mehrerer Metallisierungsschichten und mittels selektiven Ätzens A method for producing a component by locally heating one or more metal layers and by means of selective etching
10/30/2008DE102008018865A1 Halbleiterbauelement und Verfahren zu seiner Herstellung Semiconductor device and process for its preparation
10/30/2008DE102008018744A1 SONOS-Stapelspeicher SONOS stack
10/30/2008DE102008015708A1 Nicht-flüchtige Speichervorrichtungen und Herstellungsverfahren dafür Non-volatile memory devices and manufacturing method therefor
10/30/2008DE102008013901A1 Bildsensor und Verfahren zu seiner Herstellung Image sensor and method for its preparation
10/30/2008DE102008012016A1 In-situ-, Ex-situ- und Inline-Prozessüberwachung, -optimierung und -herstellungsverfahren In situ, ex situ and in-line process monitoring, optimization and -herstellungsverfahren
10/30/2008DE102008000373A1 Dielektrische Vorrichtung und assoziierte Verfahren The dielectric device and associated method
10/30/2008DE102007060729A1 Waferpolieraufzeichnungsverfahren und Vorrichtung Wafer polishing recording method and apparatus
10/30/2008DE102007041190A1 Bildsensor und Verfahren zu seiner Herstellung Image sensor and method for its preparation
10/30/2008DE102007040406A1 Halbleiterbauelement und Verfahren zu dessen Herstellung Semiconductor device and process for its preparation
10/30/2008DE102007028316B3 Halbleiterbauelement mit Pufferschicht und Verfahren zu dessen Herstellung A semiconductor device having a buffer layer and process for its preparation
10/30/2008DE102007024844A1 Speicherzellenarray und Verfahren zum Ausbilden eines Speicherzellenarrays Memory cell array and method of forming a memory cell array
10/30/2008DE102007023563A1 Integriertes Sensorelement mit Plasmon-Polariton-Resonanz-Effekt Integrated sensor element with plasmon-polariton resonance effect
10/30/2008DE102007022095A1 Integrierte Schaltkreise und Verfahren zum Herstellen derselben Integrated circuits and methods for manufacturing the same
10/30/2008DE102007020979A1 Nitridhalbleiterbauelement mit Gruppe-III-Nitrid-Schichtstruktur auf einer Gruppe-IV-Substratoberfläche mit höchstens zweizähliger Symmetrie The nitride semiconductor Group III nitride layer structure on a group IV substrate surface with at most twofold symmetry
10/30/2008DE102007020618B3 Verfahren zum Herstellen eines festen Leistungsmoduls und damit hergestelltes Transistormodul A method for producing a solid power module and thus produced transistor module
10/30/2008DE102007020039A1 Method for fabrication of vertically inhomogenous platinum or gold distribution in semiconductor substrate, involves diffusing platinum or gold into semiconductor substrate from one of surfaces of semiconductor substrate
10/30/2008DE102007019566A1 Drahtführungsrolle für Drahtsäge Wire guide pulley for wire saw
10/30/2008DE102007019552A1 Substrat mit Durchführung und Verfahren zur Herstellung desselben Of the same substrate with implementation and method for producing
10/30/2008DE102007019551A1 Semiconductor component element has substrate of conduction type with main surface of semiconductor component element, and semiconductor layer of conduction type is arranged on substrate
10/30/2008DE102007019268A1 Vorrichtung zum Bedrucken und/oder Prägen von Substraten Device for printing and / or embossing of substrates
10/30/2008DE102007018098A1 Verfahren zum Herstellen eines Halbleiterkörpers mit einem Graben und Halbleiterkörper mit einem Graben A method of manufacturing a semiconductor body having a trench and the semiconductor body having a trench
10/30/2008DE102007017788A1 Doping zone producing method for semiconductor body, involves executing short-time heat treatment at one temperature, and executing longer heat treatment at another temperature for forming doping zone
10/30/2008DE102007017546A1 Multichipmodul Multi-chip module
10/30/2008DE102007016631A1 Storage capacitor for use in e.g. memory cell of dynamic RAM, has conductive material which is provided at distance from capacitor electrode by capacitor dielectric and is extended over lower part of outer side of electrode
10/30/2008DE102007010223A1 Verfahren zur Bestimmung geometrischer Parameter eines Wafers und Verwendung des Verfahren bei der optischen Inspektion von Wafern A method for determining geometric parameters of a wafer and use of the method for the optical inspection of wafers
10/30/2008DE102006048586B4 Verfahren und Vorrichtung zur Herstellung einer Halbleitervorrichtung und Halbleiterwafer mit einer eine Metallisierung aufweisenden Vorderseite Method and apparatus for manufacturing a semiconductor device and semiconductor wafer with a metallization having a front
10/30/2008DE102004007186B4 Verfahren zum Entfernen einer Schicht auf einem Grabenboden eines in einem Substrat ausgebildeten Grabens A method for removing a layer on a bottom of a grave formed in a substrate trench
10/30/2008DE10103193B4 Verfahren zur Herstellung von Leiterbahnstrukturen A process for the production of conductor track structures
10/30/2008CA2682928A1 Method for forming a pattern on a substrate and electronic device formed thereby
10/29/2008EP1986295A2 Conductive element with lateral oxidation barrier
10/29/2008EP1986242A2 Method of manufacturing a semiconductor film using hot wire CVD and method of manufacturing a photovoltaic element
10/29/2008EP1986240A2 Semiconductor device and method for manufacturing semiconductor device
10/29/2008EP1986239A2 Method for producing a matrix for detecting electromagnetic radiation and, in particular, infrared radiation.
10/29/2008EP1986233A2 On-chip reconfigurable memory
10/29/2008EP1986230A2 Method of manufacturing SOI substrate and method of manufacturing semiconductor device
10/29/2008EP1986229A1 Method for manufacturing compound material wafer and corresponding compound material wafer
10/29/2008EP1986228A1 Electrostatic chuck
10/29/2008EP1986227A1 Plasma processing apparatus and plasma processing method
10/29/2008EP1986226A1 Semiconductor device and method for manufacturing the same
10/29/2008EP1986225A1 Plasma etching method
10/29/2008EP1986224A1 Exposure apparatus, exposing method, and device manufacturing method
10/29/2008EP1986223A1 Exposure apparatus, exposing method, and device manufacturing method
10/29/2008EP1986222A1 Exposure apparatus, exposing method, and device manufacturing method
10/29/2008EP1986221A1 Exposure method, exposure apparatus, photomask and photomask manufacturing method
10/29/2008EP1986220A1 Projection optical system, exposure device, exposure method, display manufacturing method, mask, and mask manufacturing method
10/29/2008EP1986219A1 Soi substrate and method for manufacturing soi substrate
10/29/2008EP1986218A1 Method for manufacturing soi substrate
10/29/2008EP1986217A1 Method for manufacturing semiconductor substrate
10/29/2008EP1986216A1 Vertical heat treatment system and method for transferring substrate
10/29/2008EP1986215A1 Substrate processing apparatus and substrate plating apparatus
10/29/2008EP1986065A2 Method and program for selecting products to be inspected
10/29/2008EP1984948A1 Cmos devices with hybrid channel orientations, and method for fabricating the same
10/29/2008EP1984947A2 Method for fabricating and filing conductive vias and conductive vias so formed
10/29/2008EP1984946A2 Method of filling a high aspect ratio trench isolation region and resulting structure
10/29/2008EP1984945A2 A semiconductor process system having an optical instrument comprising an apparatus for aligning an optical device with an object
10/29/2008EP1984944A1 Method for making a neo-layer comprising embedded discrete components
10/29/2008EP1984942A1 Semiconductor device and manufacturing method thereof
10/29/2008EP1984941A1 Devices including graphene layers epitaxially grown on single crystal substrates
10/29/2008EP1984940A2 Method for conductivity control of (al,in,ga,b)n
10/29/2008EP1984939A1 Semiconductor device and method of manufacturing thereof
10/29/2008EP1984938A1 Device for transferring flat components by packets from a loading to unloding station
10/29/2008EP1984467A2 Barrier slurry compositions and barrier cmp methods
10/29/2008EP1927138A4 Semiconductor device
10/29/2008EP1761831A4 Gate driver output stage with bias circuit for high and wide operating voltage range
10/29/2008EP1729978A4 Method of dry plasma etching semiconductor materials
10/29/2008EP1694506B1 Method and apparatus for printing a patterned layer on a flat substrate with a flat-type-bed
10/29/2008EP1687114A4 Vertical removal of excess solder from a circuit substrate