Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
10/2008
10/30/2008WO2008129738A1 Patterning method and method for fabricating electronic element
10/30/2008WO2008129719A1 Process for producing semiconductor thin film and semiconductor device
10/30/2008WO2008129713A1 Semiconductor chip and high frequency circuit
10/30/2008WO2008129617A1 Substrate processing system
10/30/2008WO2008129603A1 Substrate conveyance system
10/30/2008WO2008129590A1 Adhesive film for semiconductor and semiconductor device made with the same
10/30/2008WO2008129547A2 Method and system for manufacture of an electronic interface card
10/30/2008WO2008129478A1 Nonvolatile memory cell comprising a nanowire and manufacturing method thereof
10/30/2008WO2008129424A2 Ultra-thin stacked chios packaging
10/30/2008WO2008129063A1 A method of processing semi conductor wafers
10/30/2008WO2008128823A1 Fabricating a contact rhodium structure by electroplating and electroplating composition
10/30/2008WO2008128821A1 Layers composite comprising a pyrogenic zinc oxide layer and field-effect transistor comprising this composite
10/30/2008WO2008128781A1 Method for restructuring semiconductor layers
10/30/2008WO2008128444A1 Method for obtaining high-quality boundary for semiconductor devices fabricated on a partitioned substrate
10/30/2008WO2008128419A1 Cleaning composition for removing residues from plasma etch
10/30/2008WO2008128365A1 Method for forming a pattern on a substrate and electronic device formed thereby
10/30/2008WO2008112598A3 Method for utilizing heavily doped silicon feedstock to produce substrates for photovoltaic applications by dopant compensation during crystal growth
10/30/2008WO2008110746A3 Measuring apparatus
10/30/2008WO2008105790A9 Ultrasonically enhanced fuel cell systems and methods of use
10/30/2008WO2008101093B1 Post-seed deposition process
10/30/2008WO2008099246A3 Multilayer structure and its fabrication process
10/30/2008WO2008079742A3 Prevention of film deposition on pecvd process chamber wall
10/30/2008WO2008070748A3 Method and system for providing a metal oxide semiconductor device having a drift enhanced channel
10/30/2008WO2008067137A3 A carbon nanotube film electrode and an electroactive device fabricated with the carbon nanotube film electrode and methods for making same
10/30/2008WO2008020403A3 Method for improving interface reactions at semiconductor surfaces
10/30/2008WO2008013675A3 Precursors for atomic layer deposition
10/30/2008WO2007143662A3 Wall crawling devices
10/30/2008WO2007142802A3 Method of wafer-to-wafer bonding
10/30/2008WO2007140421A3 Process chamber for dielectric gapfill
10/30/2008WO2007136483A3 Ionizing system for vacuum process and metrology equipment
10/30/2008WO2007133413A3 Photoresist stripping chamber and methods of etching photoresist on substrates
10/30/2008WO2007127816A3 Method for forming c4 connections on integrated circuit chips and the resulting devices
10/30/2008WO2007120344A3 Magnetic tunnel junction device with improved barrier layer
10/30/2008WO2007117977A3 Memory cell with reduced size and standby current
10/30/2008WO2007114863A3 Self-aligned trench mosfet structure and method of manufacture
10/30/2008WO2007098306A3 Cap layer for an aluminum copper bond pad
10/30/2008WO2007081605A3 Method for converting electrical components
10/30/2008WO2007041348A3 Self aligned process for bjt fabrication
10/30/2008WO2006105156A3 High speed substrate aligner apparatus
10/30/2008WO2006060562A3 Method for designing an overlay mark
10/30/2008WO2005019793A3 Sensor platform using a horizontally oriented nanotube element
10/30/2008WO2004010477A3 Adaptive electropolishing using thickness measurements and removal of barrier and sacrificial layers
10/30/2008US20080270958 Method and system for debug and test using replicated logic
10/30/2008US20080270056 Wafer-level reliability yield enhancement system and related method
10/30/2008US20080268752 Substrate grinding method and device
10/30/2008US20080268751 Polishing condition control apparatus and polishing condition control method of CMP apparatus
10/30/2008US20080268669 Transferable Micro Spring Structure
10/30/2008US20080268660 Method of manufacturing semiconductor device
10/30/2008US20080268659 High temperature methods for enhancing retention characteristics of memory devices
10/30/2008US20080268658 Photo-assisted hydrogenation process
10/30/2008US20080268657 Plasma Processing Method and Method for Manufacturing an Electronic Device
10/30/2008US20080268656 Method of forming oxide-based nano-structured material
10/30/2008US20080268655 Method for Manufacturing Semiconductor Device
10/30/2008US20080268654 Oxidizing method and oxidizing unit for object to be processed
10/30/2008US20080268653 Method of forming high dielectric film using atomic layer deposition and method of manufacturing capacitor having the high dielectric film
10/30/2008US20080268652 Solution used in the fabrication of a porous semiconductor material, and a method of fabricating said material
10/30/2008US20080268651 Catch-cup to diverter alignment leveling jig
10/30/2008US20080268650 Triple poly-si replacement scheme for memory devices
10/30/2008US20080268649 Method of forming a micro pattern in semiconductor device
10/30/2008US20080268648 Method of manufacturing a semiconductor device
10/30/2008US20080268647 Method of plasma etching with pattern mask
10/30/2008US20080268646 Reduced area dynamic random access memory (dram) cell and method for fabricating the same
10/30/2008US20080268645 Method for front end of line fabrication
10/30/2008US20080268644 Manufacturing method of semiconductor device and substrate processing apparatus
10/30/2008US20080268643 Methods and apparatus for polishing control
10/30/2008US20080268642 Deposition of transition metal carbide containing films
10/30/2008US20080268641 Method for forming dual damascene pattern
10/30/2008US20080268640 Method for forming bit-line contact plug and transistor structure
10/30/2008US20080268639 Method of Manufacturing A Semiconductor Integrated Circuit Device
10/30/2008US20080268638 Substrate with Feedthrough and Method for Producing the Same
10/30/2008US20080268637 Electrically conductive composition for via-holes
10/30/2008US20080268636 Deposition methods for barrier and tungsten materials
10/30/2008US20080268635 Process for forming cobalt and cobalt silicide materials in copper contact applications
10/30/2008US20080268634 Dopant diffusion barrier layer to prevent out diffusion
10/30/2008US20080268633 Methods of Titanium Deposition
10/30/2008US20080268632 LED epiwafer pad manufacturing process & new construction thereof
10/30/2008US20080268631 Method of Forming a Silicided Gate Utilizing a CMP Stack
10/30/2008US20080268630 Method to obtain multiple gate thicknesses using in-situ gate etch mask approach
10/30/2008US20080268629 Method of Forming Overlay Mark of Semiconductor Device
10/30/2008US20080268628 N-type semiconductor component with improved dopant implantation profile and method of forming same
10/30/2008US20080268627 Transistor performance using a two-step damage anneal
10/30/2008US20080268626 Semiconductor device having a plurality of kinds of wells and manufacturing method thereof
10/30/2008US20080268625 Enhancing transistor characteristics by a late deep implantation in combination with a diffusion-free anneal process
10/30/2008US20080268624 Method of Fabricating Semiconductor Device
10/30/2008US20080268623 Semiconductor doping with improved activation
10/30/2008US20080268622 Method for manufacturing a crystalline silicon layer
10/30/2008US20080268621 Method for manufacturing compound material wafer and corresponding compound material wafer
10/30/2008US20080268620 Method and device for protecting interferometric modulators from electrostatic discharge
10/30/2008US20080268619 Wafer dividing method
10/30/2008US20080268618 Manufacturing method of semiconductor substrate and manufacturing method of semiconductor device
10/30/2008US20080268617 Methods for substrate surface cleaning suitable for fabricating silicon-on-insulator structures
10/30/2008US20080268616 Semiconductor device, its manufacture method and electronic component unit
10/30/2008US20080268615 Treatment of a Germanium Layer Bonded with a Substrate
10/30/2008US20080268614 Wafer Bonding
10/30/2008US20080268613 Semiconductor Substrate And Method For Production Thereof
10/30/2008US20080268612 Method of forming isolation layer in semiconductor device
10/30/2008US20080268611 Shallow trench isolation by atomic-level silicon reconstruction
10/30/2008US20080268610 Methods and semiconductor structures for latch-up suppression using a conductive region
10/30/2008US20080268609 Stacking fault reduction in epitaxially grown silicon
10/30/2008US20080268608 Method of fabricating a flash memory device
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