Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
10/2012
10/18/2012US20120263001 Systems, memories, and methods for refreshing memory arrays
10/18/2012US20120262992 Semiconductor device including multi-chip
10/18/2012US20120262985 Mulit-bit cell
10/18/2012US20120262984 Reducing Temporal Changes in Phase Change Memories
10/18/2012US20120262983 Semiconductor device and driving method thereof
10/18/2012US20120262982 Memory device and driving method of the memory device
10/18/2012US20120262981 Data retention structure for non-volatile memory
10/18/2012US20120262980 Random access memory with cmos-compatible nonvolatile storage element and parallel storage capacitor
10/18/2012US20120262976 Semiconductor storage device
10/17/2012CN102742163A Method for driving a nonvolatile logic circuit as an exclusive-or circuit
10/17/2012CN102742003A 半导体器件 Semiconductor devices
10/17/2012CN102742002A Semiconductor device and driving method of the same
10/17/2012CN102742001A Semiconductor device
10/17/2012CN102741934A Magnetic tunnel junction device and fabrication
10/17/2012CN102741688A Assay information management methods and devices
10/17/2012CN102739236A Programmable lsi
10/17/2012CN102738388A Semiconductor device possessing memristor characteristic and method for realizing multilevel storage
10/17/2012CN102737711A Phase change memory (pcm) architecture and a method for writing into pcm architecture
10/17/2012CN102737710A Sensitivity amplifying sequential control signal generating circuit based on self-timing
10/17/2012CN102737709A Semiconductor integrated circuit device
10/17/2012CN102737708A Semiconductor storage device
10/17/2012CN102737707A 半导体装置及其驱动方法 Semiconductor device and driving method
10/17/2012CN102737706A Method and system for controlling refresh in volatile memories
10/17/2012CN102737697A Differential read write back sense amplifier circuits and methods
10/17/2012CN102163455B High-reliability static storage cell and application method thereof
10/17/2012CN101964394B Method for preparing phase change unit of phase change memory
10/17/2012CN101908371B Gain cell eDRAM for programmable logic device
10/17/2012CN101853698B Semiconductor memory device
10/16/2012US8289797 Method, apparatus, and system for active refresh management
10/16/2012US8289783 Semiconductor memory device capable of suppressing peak current
10/16/2012US8289781 Adaptive dynamic reading of flash memories
10/16/2012US8289778 Data processing device and method of reading trimming data
10/16/2012US8289777 Semiconductor memory device
10/16/2012US8289775 Apparatus and method for inhibiting excess leakage current in unselected nonvolatile memory cells in an array
10/16/2012US8289774 Flash memory device and operating method of flash memory device
10/16/2012US8289773 Non-volatile memory (NVM) erase operation with brownout recovery technique
10/16/2012US8289771 Data reading method and control circuit and memory controller using the same
10/16/2012US8289770 Semiconductor memory device and system including the same
10/16/2012US8289769 Method of programming nonvolatile memory device
10/16/2012US8289768 Systems and methods for extended life multi-bit memory cells
10/16/2012US8289766 Nonvolatile semiconductor memory device and method for driving same
10/16/2012US8289765 Active strap magnetic random access memory cells configured to perform thermally-assisted writing
10/16/2012US8289764 Semiconductor device
10/16/2012US8289763 Memory arrays
10/16/2012US8289762 Double-pulse write for phase change memory
10/16/2012US8289761 Nonvolatile memory cell, nonvolatile memory device and method for driving the same
10/16/2012US8289759 Non-volatile memory cell with precessional switching
10/16/2012US8289758 Magnetic tunnel junction with electronically reflective insulative spacer
10/16/2012US8289757 Embedded magnetic random access memory (MRAM)
10/16/2012US8289756 Non volatile memory including stabilizing structures
10/16/2012US8289755 Volatile memory elements with soft error upset immunity
10/16/2012US8289754 SRAM cells, memory circuits, systems, and fabrication methods thereof
10/16/2012US8289753 Semiconductor device
10/16/2012US8289752 Asymmetric write current compensation using gate overdrive for resistive sense memory cells
10/16/2012US8289751 Non-volatile memory cell with programmable unipolar switching element
10/16/2012US8289749 Soft forming reversible resistivity-switching element for bipolar switching
10/16/2012US8289748 Tuning a variable resistance of a resistive sense element
10/16/2012US8289747 Non-volatile memory device and method of operating the same
10/16/2012US8289746 MRAM diode array and access method
10/16/2012US8289548 Printer having first and second memory regions and non-transitory computer-readable recording medium storing control program of printer
10/16/2012US8289240 Light emitting display, display panel, and driving method thereof
10/16/2012US8288264 Scalable multi-function and multi-level nano-crystal non-volatile memory device
10/16/2012US8287105 Nozzle arrangement for an inkjet printhead having an ink ejecting roof structure
10/11/2012WO2012138111A2 Dynamic random access memory for a semiconductor storage device-based system
10/11/2012US20120257449 High Density Magnetic Random Access Memory
10/11/2012US20120257448 Multi-Cell Per Memory-Bit Circuit and Method
10/11/2012US20120257447 Magnetic tunnel junction with compensation element
10/11/2012US20120257446 Unipolar spin-transfer switching memory unit
10/11/2012US20120257445 Nonvolatile memory apparatus having magnetoresistive memory elements and method for driving the same
10/11/2012US20120257444 Write driver circuit for mram, mram and layout structure thereof
10/11/2012US20120257443 Semiconductor integrated circuit device with reduced leakage current
10/11/2012US20120257442 Semiconductor memory device
10/11/2012US20120257441 Memory bit redundant vias
10/11/2012US20120257440 Memory element and signal processing circuit
10/11/2012US20120257439 Memory device and semiconductor device using the same
10/11/2012US20120257438 Contemporaneous margin verification and memory access for memory cells in cross point memory arrays
10/11/2012US20120257437 Semiconductor device
10/11/2012US20120257436 Semiconductor intergrated circuit and operating method thereof
10/11/2012DE102011006782A1 Speicherzelle Memory cell
10/10/2012EP2509076A1 Electronic device such as a selector
10/10/2012EP2507849A2 Fabrication and integration of devices with top and bottom electrodes including magnetic tunnel junctions
10/10/2012EP2507795A2 Dram sense amplifier that supports low memory-cell capacitance
10/10/2012CN202487577U Non-volatile memory compatible with CMOS (Complementary Metal-Oxide-Semiconductor Transistor) logic process
10/10/2012CN1697078B Semiconductor memory
10/10/2012CN102725798A Programming non-volatile memory with reduced number of verify operations
10/10/2012CN102725797A Programming memory with direct bit line driving to reduce channel-to-floating gate coupling
10/10/2012CN102723438A An organic resistance random access memory unit, an organic resistance random access memory and a preparation method thereof
10/10/2012CN102723110A Write margin control circuit
10/10/2012CN102723109A Novel static random access memory (SRAM) storage unit preventing single particle from turning
10/10/2012CN102723108A Asynchronous FIFO memory for clocks
10/10/2012CN102723107A Concurrent operation of plural flash memories
10/10/2012CN102723105A Multivalue multiport memory unit
10/10/2012CN102360565B Charge pump system and method for generating reading and writing operation word line voltage by aid of same and memory
10/10/2012CN101958148B Phase change random access memory unit structure capable of eliminating interference and phase change random access memory formed by same
10/10/2012CN101727972B Static random access memories and access methods thereof
10/10/2012CN101699562B Erasing method of phase change memory
10/10/2012CN101447501B Semiconductor device and method of manufacturing the same
10/10/2012CN101388244B Semiconductor integrated circuit
10/10/2012CN101297372B Method and apparatus for programming/erasing a non-volatile memory
10/09/2012US8286021 Flash memory devices with high data transmission rates and memory systems including such flash memory devices
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