| Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008) |
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| 07/04/2000 | US6084821 Semiconductor storage device having a divided word line structure |
| 07/04/2000 | US6084818 Semiconductor memory device capable of efficient memory cell select operation with reduced element count |
| 07/04/2000 | US6084816 Semiconductor memory device |
| 07/04/2000 | US6084814 Antifuse detection circuit |
| 07/04/2000 | US6084813 Apparatus and method for controlling memory backup using main power supply and backup power supply |
| 07/04/2000 | US6084812 Device and method for varying bit line precharge voltage in semiconductor memory |
| 07/04/2000 | US6084811 Phased sense amplifiers |
| 07/04/2000 | US6084809 Main amplifier circuit and input-output bus for a dynamic random access memory |
| 07/04/2000 | US6084803 Initialization of non-volatile programmable latches in circuits in which an initialization operation is performed |
| 07/04/2000 | US6084802 Semiconductor integrated circuit device |
| 07/04/2000 | US6084797 Method for reading a multiple-level memory cell |
| 07/04/2000 | US6084795 Ferroelectric memory device |
| 07/04/2000 | US6084453 Clock converting circuit |
| 07/04/2000 | US6084438 Data determination circuit |
| 07/04/2000 | US6084434 Adjustable output driver circuit |
| 07/04/2000 | US6084386 Voltage generation circuit capable of supplying stable power supply voltage to load operating in response to timing signal |
| 07/04/2000 | US6084273 Analogue misfet with threshold voltage adjuster |
| 07/04/2000 | US6083982 Stimulating sodium excretion in the urine of a mammal comprising administering to the mammal a alkoxyalkyl or hydroxy alkyl substituted phenolic compound |
| 07/04/2000 | US6083764 Method of fabricating an MTJ with low areal resistance |
| 06/29/2000 | WO2000038192A1 Magnetic random access memory with a reference memory array |
| 06/29/2000 | WO2000038191A1 Method of fabricating a magnetic random access memory |
| 06/29/2000 | WO2000038190A1 Current sense amplifier |
| 06/29/2000 | WO2000038066A1 Integrated memory with redundancy |
| 06/29/2000 | WO2000019443B1 Circuit for generating a reference voltage for reading out from a ferroelectric memory |
| 06/29/2000 | DE19962510A1 Vorrichtung zum Erzeugen eines internen Befehlsignals und Verfahren hierfür A device for generating an internal command signal and method thereof |
| 06/28/2000 | EP1014581A1 Adjustable strength driver circuit and method of adjustment |
| 06/28/2000 | EP1014447A1 One-time-programmable memory cell manufactured in CMOS tecnology |
| 06/28/2000 | EP1014381A1 Semiconductor memory device and storage method thereof |
| 06/28/2000 | EP1014380A1 Self boosted wordline |
| 06/28/2000 | EP1014378A1 High speed output enable path and method for an integrated circuit device |
| 06/28/2000 | EP1014267A1 Method and apparatus for parallel redundancy in semiconductor memories |
| 06/28/2000 | EP1012845A1 Method and apparatus for local control signal generation in a memory device |
| 06/28/2000 | CN1258079A Semiconductor memory device |
| 06/28/2000 | CN1258078A Distributed block redundance of memory device |
| 06/27/2000 | US6081478 Separate byte control on fully synchronous pipelined SRAM |
| 06/27/2000 | US6081472 Cell refresh circuit of memory device |
| 06/27/2000 | US6081468 Semiconductor device |
| 06/27/2000 | US6081465 Static RAM circuit for defect analysis |
| 06/27/2000 | US6081464 Circuit for SRAM test mode isolated bitline modulation |
| 06/27/2000 | US6081461 Circuit and method for a memory device with p-channel isolation gates |
| 06/27/2000 | US6081460 Integrated circuit devices having voltage level responsive mode-selection circuits therein and methods of operating same |
| 06/27/2000 | US6081456 Bit line control circuit for a memory array using 2-bit non-volatile memory cells |
| 06/27/2000 | US6081453 Nonvolatile semiconductor memory device |
| 06/27/2000 | US6081451 Memory device that utilizes single-poly EPROM cells with CMOS compatible programming voltages |
| 06/27/2000 | US6081446 Multiple bit magnetic memory cell |
| 06/27/2000 | US6081445 Method to write/read MRAM arrays |
| 06/27/2000 | US6081443 Semiconductor memory device |
| 06/27/2000 | US6081142 Hold time margin increased semiconductor device and access time adjusting method for same |
| 06/27/2000 | US6081138 High-speed sense amplifier |
| 06/27/2000 | US6081011 CMOS logic gate having buried channel NMOS transistor for semiconductor devices and fabrication method of the same |
| 06/22/2000 | CA2292937A1 Hall effect ferromagnetic random access memory device and its method of manufacture |
| 06/21/2000 | EP1010182A2 Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping |
| 06/21/2000 | EP1010181A1 A read-only memory and read-only memory devices |
| 06/21/2000 | EP1010180A1 A read-only memory and read-only memory device |
| 06/21/2000 | EP1010179A1 Two step memory device command buffer apparatus and method and memory devices and computer systems using same |
| 06/21/2000 | EP1010038A1 Optical logic element and optical logic device |
| 06/21/2000 | DE19958268A1 Semiconductor memory device has control circuit for selective activation of different resetting circuits connected across databus pair before and after write operation |
| 06/21/2000 | DE19952011A1 Adressentaktsignalgenerator für Speichergerät Address clock signal generator for storage device |
| 06/21/2000 | DE19928271A1 Local clock signal generation circuit for semiconductor memory element uses phase mixers receiving signals from different points along internal clock signal line for providing respective local clock signals |
| 06/21/2000 | CN1257285A Memory data bus structure and method for structuring multi-width chaacter memory |
| 06/21/2000 | CN1053757C Wafer burn-in test circuit of a semiconductor memory device |
| 06/20/2000 | US6079023 Multi-bank memory devices having common standby voltage generator for powering a plurality of memory array banks in response to memory array bank enable signals |
| 06/20/2000 | US6079019 IC memory card |
| 06/20/2000 | US6078636 Counter circuit and semiconductor memory having counter circuit as address counter circuit |
| 06/20/2000 | US6078546 Synchronous semiconductor memory device with double data rate scheme |
| 06/20/2000 | US6078544 Multi-port SRAM |
| 06/20/2000 | US6078543 Refresh scheme for redundant word lines |
| 06/20/2000 | US6078542 Semiconductor memory device implementing multi-bank configuration with reduced number of signal lines |
| 06/20/2000 | US6078540 Selective power distribution circuit for an integrated circuit |
| 06/20/2000 | US6078538 Method and apparatus for reducing bleed currents within a DRAM array having row-to-column shorts |
| 06/20/2000 | US6078536 Packet type integrated circuit memory devices having pins assigned direct test mode and associated methods |
| 06/20/2000 | US6078532 Method and apparatus for improving performance of DRAM subsystems with SRAM overlays |
| 06/20/2000 | US6078531 Word line voltage supply circuit |
| 06/20/2000 | US6078530 Reference voltage generator for a ferroelectric material memory device |
| 06/20/2000 | US6078529 Data storing device |
| 06/20/2000 | US6078527 Pipelined dual port integrated circuit memory |
| 06/20/2000 | US6078519 Semiconductor device, data processing system and a method for changing threshold of a non-volatile memory cell |
| 06/20/2000 | US6078518 Apparatus and method for reading state of multistate non-volatile memory cells |
| 06/20/2000 | US6078517 Superconducting memory cell with directly-coupled readout |
| 06/20/2000 | US6078516 Ferroelectric memory |
| 06/20/2000 | US6078514 Semiconductor device and semiconductor system for high-speed data transfer |
| 06/20/2000 | US6078210 Internal voltage generating circuit |
| 06/20/2000 | US6078200 Clock signal generator |
| 06/20/2000 | US6078199 Negatively delayed signal generating circuit for compensating duty rate |
| 06/20/2000 | US6078195 Logic blocks with mixed low and regular Vt MOSFET devices for VLSI design in the deep sub-micron regime |
| 06/20/2000 | US6078084 Semiconductor integrated circuit device |
| 06/20/2000 | US6077729 Memory array having a multi-state element and method for forming such array or cellis thereof |
| 06/20/2000 | US6077716 Matrix type multiple numeration system ferroelectric random access memory using leakage current |
| 06/20/2000 | US6077618 Multilayer; laminated body of magnetic layer and nonmagnetic insulation layer |
| 06/15/2000 | DE19906200A1 Halbleiterspeichervorrichtung mit einer Subwortleitung-Ansteuerschaltung A semiconductor memory device with a sub-word line driver circuit |
| 06/14/2000 | EP1008937A1 Distributed block redundancy for memory devices |
| 06/14/2000 | EP1008936A2 Flash memory control method |
| 06/14/2000 | EP0627116B1 Optical memory |
| 06/14/2000 | CN1256792A 三维器件 3D device |
| 06/14/2000 | CN1256784A Memory device and method |
| 06/14/2000 | CN1256496A Semiconductor device with microprocessor and dynamic RAM being in the same chip |
| 06/14/2000 | CN1256495A 铁电存储器装置 Ferroelectric memory device |
| 06/13/2000 | US6075749 Semiconductor memory device |
| 06/13/2000 | US6075747 Method of controlling a row address strobe path |
| 06/13/2000 | US6075746 DRAM device with function of producing wordline drive signal based on stored charge in capacitor |