Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
04/2000
04/18/2000US6052331 Synchronous semiconductor device allowing reduction in chip area by sharing delay circuit
04/18/2000US6052330 Semiconductor memory with arbitrary data masking
04/18/2000US6052329 Output circuit and synchronous semiconductor memory device having a function of preventing output of invalid data
04/18/2000US6052328 High-speed synchronous write control scheme
04/18/2000US6052327 Dual-port programmable logic device variable depth and width memory array
04/18/2000US6052324 Semiconductor memory device capable of fast sensing operation
04/18/2000US6052318 Repairable semiconductor memory circuit having parrel redundancy replacement wherein redundancy elements replace failed elements
04/18/2000US6052317 Output circuit of semiconductor memory device
04/18/2000US6052315 Semiconductor memory having electrically erasable and programmable nonvolatile semiconductor memory cells
04/18/2000US6052314 EEPROM device
04/18/2000US6052304 Non-volatile storage element and method for manufacturing using standard processing
04/18/2000US6052303 Apparatus and method for selecting data bits read from a multistate memory
04/18/2000US6052302 Bit-wise conditional write method and system for an MRAM
04/18/2000US6052022 Voltage boosting circuits having over-voltage protection circuits therein
04/18/2000US6051441 High-efficiency miniature magnetic integrated circuit structures
04/13/2000WO2000021092A1 Semiconductor device
04/13/2000DE19845124A1 Layout for semiconductor store with dual-port memory cells
04/13/2000DE19844479C1 Integrierter Speicher mit einem differentiellen Leseverstärker Built-in memory with a differential sense amplifier
04/12/2000EP0992997A1 Intelligent refreshing method and apparatus for increasing multi-level non-volatile memory charge retention reliability
04/11/2000USRE36655 Semiconductor memory device and method for reading and writing data therein
04/11/2000US6049846 Integrated circuit having memory which synchronously samples information with respect to external clock signals
04/11/2000US6049504 Pulse driver
04/11/2000US6049503 Wordline driving circuit in semiconductor memory
04/11/2000US6049502 Method for writing to multiple banks of a memory device
04/11/2000US6049501 Memory data bus architecture and method of configuring multi-wide word memories
04/11/2000US6049500 Semiconductor memory device and defect remedying method thereof
04/11/2000US6049499 Shared electrical supply line for a semiconductor storage device
04/11/2000US6049497 Electrically modifiable multilevel non-volatile memory comprising internal refresh means
04/11/2000US6049495 Auto-programmable current limiter to control current leakage due to bitline to wordline short
04/11/2000US6049493 Semiconductor memory device having a precharge device
04/11/2000US6049492 Interleaved sense amplifier with a single-sided precharge device
04/11/2000US6049490 Decoded signal comparison circuit
04/11/2000US6049488 Clock synchronous semiconductor memory device capable of preventing outputting of invalid data
04/11/2000US6049487 Embedded static random access memory for field programmable gate array
04/11/2000US6049480 Circuit for performing auto-verifying program on non-volatile memory device
04/11/2000US6049477 Ferroelectric memory device in which the channel region has the same conductivity type as the diffusion region
04/11/2000US6049476 High memory capacity DIMM with data and state memory
04/11/2000US6049245 Power reduction circuit
04/11/2000US6049243 Voltage level converter circuit improved in operation reliability
04/11/2000US6049239 Variable delay circuit and semiconductor integrated circuit device
04/11/2000US6048738 Method of making ferroelectric memory cell for VLSI RAM array
04/06/2000WO2000019446A1 Method for writing data for semiconductor memory and semiconductor memory
04/06/2000WO2000019445A1 Read/write buffers for complete hiding of the refresh of a semiconductor memory and method of operating same
04/06/2000WO2000019444A1 Single-port memory location
04/06/2000WO2000019443A2 Circuit for generating a reference voltage for reading out from a ferroelectric memory
04/06/2000WO2000019442A1 Integrated memory with differential read amplifier
04/06/2000WO2000019441A2 Magnetoresistive memory having improved interference immunity
04/06/2000WO2000019440A2 Magnetoresistive memory with low current density
04/06/2000WO2000019439A1 Cipher machine
04/06/2000WO2000019438A1 Device containing a multi-port memory
04/06/2000WO2000019436A1 Decoder element for producing an output signal with three different potentials and operating method for said decoder element
04/06/2000WO2000019435A1 Decoder element for producing an output signal with three different potentials
04/05/2000EP0991080A2 Non-volatile semiconductor memory device
04/05/2000EP0991079A2 Integrated memory
04/05/2000EP0991078A2 Quantum random address memory with magnetic readout and/or nano-memory elements
04/05/2000EP0991077A2 Semiconductor memory device
04/05/2000EP0991076A2 Quantum random address memory
04/05/2000EP0990987A2 Electric device with flash memory built-in
04/05/2000EP0990235A2 Electrically addressable passive device, method for electrical addressing of the same and uses of the device and the method
04/05/2000CN1249849A Strontium bismuth niobate tantalate ferroelectric thin film
04/05/2000CN1249843A Precision programming of nonvolatile memory cells
04/05/2000CN1249518A Non-volatile semiconductor memory device
04/04/2000US6047344 Semiconductor memory device with multiplied internal clock
04/04/2000US6046956 Semiconductor device, word line driver circuit and word line driving method
04/04/2000US6046955 Semiconductor memory device with testable spare columns and rows
04/04/2000US6046954 Circuit for controlling internal voltage for output buffer of semiconductor memory device and method therefor
04/04/2000US6046953 Decoded autorefresh mode in a DRAM
04/04/2000US6046952 Method and apparatus for optimizing memory performance with opportunistic refreshing
04/04/2000US6046949 Semiconductor integrated circuit
04/04/2000US6046948 Low word line to bit line short circuit standby current semiconductor memory
04/04/2000US6046947 Integrated circuit memory devices having direct access mode test capability and methods of testing same
04/04/2000US6046942 Output buffer including an application-specific SRAM memory cell for low voltage, high speed operation
04/04/2000US6046936 Semiconductor, memory card, and data processing system
04/04/2000US6046935 Semiconductor device and memory system
04/04/2000US6046934 Method and device for multi-level programming of a memory cell
04/04/2000US6046933 Nonvolatile semiconductor memory device and IC memory card using same
04/04/2000US6046931 Method and apparatus for a RAM circuit having N-nary output interface
04/04/2000US6046930 Memory array and method for writing data to memory
04/04/2000US6046929 Memory device with two ferroelectric capacitors per one cell
04/04/2000US6046928 Non-volatile semiconductor memory device
04/04/2000US6046927 Nonvolatile semiconductor memory device, a method of fabricating the same, and read, erase write methods of the same
04/04/2000US6046926 Ferroelectric memory and screening method therefor
04/04/2000US6046925 Photochromic fluorescent proteins and optical memory storage devices based on fluorescent proteins
04/04/2000US6046924 Semiconductor memory device having a sense amplifier region formed in a triple-well structure
04/04/2000US6046627 Semiconductor device capable of operating stably with reduced power consumption
04/04/2000US6046626 Voltage transfer circuit and a booster circuit, and an IC card comprising the same
04/04/2000US6046624 Internal power supply generating circuit for a semiconductor memory device
04/04/2000US6046621 Differential signal generator with dynamic beta ratios
04/04/2000US6046609 Sense amplifier circuit
03/2000
03/30/2000WO2000017936A1 Ferroelectric thin films of reduced tetragonality
03/30/2000WO2000017883A1 Synchronous circuit
03/30/2000WO2000017660A1 Electronic component
03/30/2000WO2000004481A3 An apparatus and method for thermal regulation in memory subsystems
03/30/2000DE19844728C1 Decoderelement zur Erzeugung eines Ausgangssignals mit drei unterschiedlichen Potentialen Decoder element for generating an output signal with three different potentials
03/30/2000DE19844666C1 Decoderelement zur Erzeugung eines Ausgangssignals mit drei unterschiedlichen Potentialen und Betriebsverfahren für das Decoderelement Decoder element for generating an output signal with three different potentials and operating procedures for the decoder element
03/30/2000DE19844402A1 Integrierter Speicher Built-in Memory
03/30/2000DE19844101A1 Schaltungsanordnung zur Generierung einer Referenzspannung für das Auslesen eines ferroelektrischen Speichers Circuit arrangement for generating a reference voltage for reading out a ferroelectric memory
03/30/2000CA2343129A1 Ferroelectric thin films of reduced tetragonality
03/29/2000EP0989565A1 Integrated memory device
03/29/2000CN1248776A Synchronous semiconductor memory device with clock generating circuit