Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
10/2013
10/22/2013US8565004 Nonvolatile memory device and method for programming the same
10/22/2013US8565003 Multilayer cross-point memory array having reduced disturb susceptibility
10/22/2013US8565002 Nonvolatile logic circuit and a method for operating the same
10/22/2013US8565001 Method for operating a nonvolatile switching device
10/22/2013US8565000 Variable impedance circuit controlled by a ferroelectric capacitor
10/22/2013US8564080 Magnetic storage element utilizing improved pinned layer stack
10/17/2013WO2013154991A2 Self-referenced sense amplifier for spin torque mram
10/17/2013WO2013154836A1 System and method of adjusting a programming step size for a block of a memory
10/17/2013WO2013154564A1 Selector for low voltage embedded memory
10/17/2013WO2013153853A1 Semiconductor recording device
10/17/2013WO2013153321A1 Magnetic device with thermally-assisted writing
10/17/2013WO2013071176A3 Three port mtj structure and integration
10/17/2013US20130272082 Refresh circuit in semiconductor memory device
10/17/2013US20130272062 Method and Apparatus for Programming a Spin-Transfer Torque Magnetic Random Access Memory (STTMRAM) Array
10/17/2013US20130272061 Spin current generator for stt-mram or other spintronics applications
10/17/2013US20130272060 Self-referenced sense amplifier for spin torque mram
10/17/2013US20130272059 Differential mram structure with relatively reversed magnetic tunnel junction elements enabling writing using same polarity current
10/17/2013US20130272058 Semiconductor integrated circuit device
10/17/2013US20130272057 Global bit select circuit with write around capability
10/17/2013US20130272056 Apparatus for SRAM Cells
10/17/2013US20130272055 Semiconductor device and method for driving semiconductor device, and electronic device
10/17/2013US20130272054 System for powering up voltage domains after exiting powerdown event
10/17/2013US20130272053 Apparatuses and methods for providing set and reset voltages at the same time
10/17/2013US20130272052 Nonvolatile memory device and memory system including the same
10/17/2013DE112005001325B4 Lösch-Verfahren für einen Multilevel-Bit-Flash-Speicher Erase method for a multilevel bit flash memory
10/17/2013DE102013101816A1 Vorrichtung für SRAM-Zellen Apparatus for SRAM cells
10/17/2013DE102012111359A1 Differenzielle MRAM-Struktur mit zueinander umgekehrten magnetischen Tunnelübergangselementen, welche das Schreiben unter Verwendung desselben Polaritätsstroms ermöglichen Differential MRAM structure with mutually inverse magnetic tunnel junction elements, which allow you to write using the same polarity current
10/17/2013DE102005046777B4 Halbleiterspeicher-Einrichtung A semiconductor memory device
10/17/2013DE102005029874B4 Integrierte Abschlussschaltung und Halbleiterspeichervorrichtung mit integrierter Abschlussschaltung Integrated termination circuit and semiconductor memory device with integrated termination circuit
10/16/2013EP2649620A1 Magnectic structure
10/16/2013EP2649619A1 Embedded dram having low power self-correction capability
10/16/2013EP2649618A2 Memory device refresh commands on the fly
10/16/2013CN102270654B Resistive random access memory device and manufacturing and operating methods thereof
10/16/2013CN102084427B Gated lateral thyristor-based random access memory (GLTRAM) cells with separate read and write access transistors, memory devices and integrated circuits incorporating the same
10/16/2013CN102082018B Magnetic multilayer film unit, preparation method and magnetic moment overturning method thereof
10/16/2013CN101853697B Gain cell embedded dynamic random access memory (eDRAM) unit, memory and preparation method thereof
10/16/2013CN101819811B Three-value FeRAM circuit
10/16/2013CN101740113B Method and system for providing directed bank refresh for volatile memories
10/16/2013CN101584003B Variable program voltage increment values in non-volatile memory program operations
10/16/2013CN101393769B Activated operation method for resistor memory
10/15/2013US8561001 System and method for testing stacked dies
10/15/2013US8560797 Method and apparatus for indicating mask information
10/15/2013US8560107 Substrate processing system
10/15/2013US8559235 Nonvolatile memory device, operating method thereof and memory system including the same
10/15/2013US8559232 DRAM-like NVM memory array and sense amplifier design for high temperature and high endurance operation
10/15/2013US8559230 Row decoder and non-volatile memory device
10/15/2013US8559229 Flash memory device and wordline voltage generating method thereof
10/15/2013US8559223 Fusion memory
10/15/2013US8559221 Nonvolatile semiconductor memory device and method for driving same
10/15/2013US8559220 Semiconductor device
10/15/2013US8559219 Storage element and memory device
10/15/2013US8559218 Temperature compensation in memory devices and systems
10/15/2013US8559217 Phase change material cell with stress inducer liner
10/15/2013US8559216 Nonvolatile semiconductor memory device
10/15/2013US8559215 Perpendicular magnetic random access memory (MRAM) device with a stable reference cell
10/15/2013US8559214 Magnetic memory device and magnetic random access memory
10/15/2013US8559213 Sub-threshold memory cell circuit with high density and high robustness
10/15/2013US8559212 Memory circuit and word line control circuit
10/15/2013US8559210 Memory device
10/15/2013US8559209 Array voltage regulating technique to enable data operations on large cross-point memory arrays with resistive memory elements
10/15/2013US8559208 Programmably reversible resistive device cells using polysilicon diodes
10/15/2013US8559207 Variable resistance memory device with trigger circuit for set/reset write operations
10/15/2013US8559206 Ferroelectric random access memory and memory system
10/15/2013US8558699 Multiple radio frequency network node RFID tag
10/15/2013US8558593 Frequency-doubling delay locked loop
10/15/2013US8558540 Method of measuring dimensionless coupling constant of magnetic structure
10/15/2013US8558333 System and method for manipulating domain pinning and reversal in ferromagnetic materials
10/15/2013US8558332 Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element
10/10/2013WO2013151846A1 Multiple write operations without intervening erase in non-volatile memory
10/10/2013WO2013150260A2 Static random access memory devices
10/10/2013US20130265821 Shared bit line smt mram array with shunting transistors between bit lines
10/10/2013US20130265820 Adjusting reference resistances in determining mram resistance states
10/10/2013US20130265819 Eight transistor soft error robust storage cell
10/10/2013US20130265818 Write contention-free, noise-tolerant multi-port bitcell
10/10/2013US20130265817 Memory system
10/10/2013DE112011104565T5 Nand-logik-wortleitungsauswahl NAND logic-word line selection
10/10/2013DE10235454B4 Integrierter Speicher und Verfahren zur Funktionsüberprüfung eines integrierten Speichers Integrated memory and method for functional verification of an embedded memory
10/10/2013DE102013102437A1 Bezugszellenkonfiguration für das Messen von Widerstandszuständen von MRAM-Bitzellen Reference cell configuration for measuring resistance states of MRAM bit cells
10/10/2013DE102013101675A1 Anpassung von Referenzwiderständen bei der Ermittlung von MRAM-Widerstandszuständen Adjustment of reference resistors in the determination of MRAM resistance states
10/10/2013DE102004059326B4 Leistungsversorgungsbauelement, insbesondere für einen Halbleiterspeicher Power supply device, particularly for a semiconductor memory
10/10/2013DE102004010838B4 Verfahren zum Bereitstellen von Adressinformation über ausgefallene Feldelemente und das Verfahren verwendende Schaltung A method for providing address information about failed field elements and the process circuit used
10/09/2013EP2647009A2 Analog memories utilizing ferroelectric capacitors
10/09/2013CN103348411A Ferromagnetic device providing high domain wall velocities
10/09/2013CN103345936A Write-in circuits and read-out circuits of arbitrary-K-value DRAM and eight-value DRAM
10/08/2013US8553467 Nonvolatile semiconductor memory device
10/08/2013US8553466 Non-volatile memory device, erasing method thereof, and memory system including the same
10/08/2013US8553464 Nonvolatile programmable logic switch
10/08/2013US8553460 Method and system for program pulse generation during programming of nonvolatile electronic devices
10/08/2013US8553459 Nonvolatile semiconductor memory device and memory system having the same
10/08/2013US8553456 Flash memory device having improved read operation speed
10/08/2013US8553455 Shape memory device
10/08/2013US8553454 Predictive thermal preconditioning and timing control for non-volatile memory cells
10/08/2013US8553453 Phase change memory device
10/08/2013US8553452 Method for magnetic screening of arrays of magnetic memories
10/08/2013US8553451 Spin-torque transfer memory cell structures with symmetric switching and single direction programming
10/08/2013US8553450 Magnetic random access memory and write method of the same
10/08/2013US8553449 STT-MRAM cell structures
10/08/2013US8553448 SRAM cells, memory circuits, systems, and fabrication methods thereof
10/08/2013US8553447 Semiconductor memory device and driving method thereof
10/08/2013US8553446 Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor device incorporating nonvolatile memory element
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