| Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008) |
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| 01/03/2014 | WO2014004095A1 System to reduce stress on word line select transistor during erase operation |
| 01/03/2014 | WO2014004010A1 Flexible command addressing for memory |
| 01/03/2014 | WO2014003887A1 Optimized erase operation for non-volatile memory with partially programmed block |
| 01/03/2014 | WO2014002656A1 Programming circuit, semiconductor device, and programming method |
| 01/03/2014 | WO2014000880A1 Ferroelectric memory device and manufacturing method thereof |
| 01/02/2014 | US20140006705 Method of generating memory addresses and refresh power management controller |
| 01/02/2014 | US20140006704 Row hammer condition monitoring |
| 01/02/2014 | US20140006703 Row hammer refresh command |
| 01/02/2014 | US20140003178 Semiconductor memory device |
| 01/02/2014 | US20140003161 Semiconductor apparatus and test circuit thereof |
| 01/02/2014 | US20140003140 Thyristor memory and methods of operation |
| 01/02/2014 | US20140003139 Memory devices with in-bit current limiters |
| 01/02/2014 | US20140003138 Unipolar spin-transfer switching memory unit |
| 01/02/2014 | US20140003137 Determining device and determining method |
| 01/02/2014 | US20140003136 Transistor with reduced charge carrier mobility and associated methods |
| 01/02/2014 | US20140003135 Sram bitcell implemented in double gate technology |
| 01/02/2014 | US20140003134 Semiconductor memory device and a method of controlling the same |
| 01/02/2014 | US20140003133 Sram layouts |
| 01/02/2014 | US20140003132 Apparatus for reducing write minimum supply voltage for memory |
| 01/02/2014 | US20140003125 Resistive Devices and Methods of Operation Thereof |
| 01/02/2014 | US20140001536 Nonvolatile semiconductor memory element, nonvolatile semiconductor memory, and method for operating nonvolatile semiconductor memory element |
| 01/01/2014 | CN103493140A Method for driving semiconductor storage device |
| 01/01/2014 | CN103490007A Spinning valve based on graphene nanoribbons and preparation method thereof |
| 01/01/2014 | CN103489914A Static random access memory with non-symmetric transistor and control method thereof |
| 01/01/2014 | CN103489478A Phase change memory |
| 01/01/2014 | CN103489477A Total dose effect resisting storage unit circuit |
| 01/01/2014 | CN103489476A Memory device and method for operating the same |
| 01/01/2014 | CN103489475A Method for recovering polarization characteristic of tired ferroelectric polymers film |
| 01/01/2014 | CN103489474A Magneto-resistive memory device including source line voltage generator |
| 01/01/2014 | CN102347065B Integrated circuit, device and manufacture method thereof |
| 01/01/2014 | CN102339639B Word line decoder, memory device and method of configuring a layout of a circuit |
| 01/01/2014 | CN102027548B Non-volatile multilevel memory with adaptive setting of reference voltage levels for programming, verifying and reading |
| 01/01/2014 | CN101625895B Internal voltage generating circuit |
| 12/31/2013 | US8621177 Non-volatile memory and method with phased program failure handling |
| 12/31/2013 | US8619487 Semiconductor memory device and method of controlling the same |
| 12/31/2013 | US8619475 Methods to operate a memory cell |
| 12/31/2013 | US8619468 Semiconductor memory device for storing multivalued data |
| 12/31/2013 | US8619466 Nonvolatile latch circuit, nonvolatile flip-flop circuit, and nonvolatile signal processing device |
| 12/31/2013 | US8619465 8-transistor SRAM cell design with inner pass-gate junction diodes |
| 12/31/2013 | US8619464 Static random-access memory having read circuitry with capacitive storage |
| 12/31/2013 | US8619463 Adaptive write bit line and word line adjusting mechanism for memory |
| 12/31/2013 | US8619462 VSS-sensing amplifier |
| 12/31/2013 | US8619461 Nonvolatile semiconductor memory device |
| 12/31/2013 | US8619460 Nonvolatile memory device and method for programming nonvolatile memory element |
| 12/31/2013 | US8619459 High operating speed resistive random access memory |
| 12/31/2013 | US8619457 Three-device non-volatile memory cell |
| 12/31/2013 | US8619456 Memory arrays and associated methods of manufacturing |
| 12/31/2013 | US8619455 Ferroelectric memory |
| 12/31/2013 | US8618786 Self-biased voltage regulation circuitry for memory |
| 12/31/2013 | US8618590 Spin transistor, integrated circuit, and magnetic memory |
| 12/27/2013 | WO2013191920A1 Memory cells, semiconductor device structures, memory systems, and methods of fabrication |
| 12/27/2013 | WO2013191911A1 Method, apparatus and system for a per-dram addressability mode |
| 12/27/2013 | WO2013189212A1 Method and device for controlling use of non-least-significant bit page in storage device |
| 12/26/2013 | US20130346685 Memory Component with Pattern Register Circuitry to Provide Data Patterns for Calibration |
| 12/26/2013 | US20130343136 Sram with buffered-read bit cells and its testing |
| 12/26/2013 | US20130343121 Semiconductor device and method of fabricating the same |
| 12/26/2013 | US20130343119 Memory programming to reduce thermal disturb |
| 12/26/2013 | US20130343118 Magnetic memory devices and methods of operating the same |
| 12/26/2013 | US20130343117 Writing circuit for a magnetoresistive memory cell |
| 12/26/2013 | US20130343116 Writing circuit for a magnetoresistive memory cell, memory cell arrangement and method of writing into a magnetoresistive memory cell of a memory cell arrangement |
| 12/26/2013 | US20130343115 Resistance memory cell and operation method thereof |
| 12/26/2013 | US20130343114 Programmed-state detection in memristor stacks |
| 12/26/2013 | US20130343113 Semiconductor device |
| 12/25/2013 | EP2676274A1 Methods of integrated shielding into mtj device for mram |
| 12/25/2013 | EP2089888B1 Electronic devices based on current induced magnetization dynamics in single magnetic layers |
| 12/25/2013 | CN203366748U Novel bronze lock USB (Universal Serial Bus) flash disk |
| 12/25/2013 | CN103477393A Multi-layer memory system with three memory layers having different bit per cell storage capacities |
| 12/25/2013 | CN103477392A Nonvolatile memory and method for improved programming with reduced verify |
| 12/25/2013 | CN103474093A Tracking path for controlling opening of sense amplifier and static random access memory (SRAM) using tracking path |
| 12/25/2013 | CN103474092A Anti-radiation hardened storage cell circuit |
| 12/25/2013 | CN102160118B Improving data retention of last word line of non-volatile memory arrays |
| 12/25/2013 | CN102017128B Magnetic tunnel junction cell including multiple vertical magnetic domains |
| 12/25/2013 | CN101901629B Nonvolatile memory protecting system and method |
| 12/25/2013 | CN101430929B Method and device for irreversibly programming and reading nonvolatile memory cells |
| 12/24/2013 | US8614924 Non-volatile memory systems and methods |
| 12/24/2013 | US8614920 Method and apparatus for logic read in flash memory |
| 12/24/2013 | US8614917 Vertically-integrated nonvolatile memory devices having laterally-integrated ground select transistors |
| 12/24/2013 | US8614915 Offset non-volatile storage |
| 12/24/2013 | US8614914 Memory system, program method thereof, and computing system including the same |
| 12/24/2013 | US8614913 Method and apparatus for controlling page buffer of non-volatile memory device |
| 12/24/2013 | US8614912 Magnetic random access memory (MRAM)layout with uniform pattern |
| 12/24/2013 | US8614911 Energy-efficient row driver for programming phase change memory |
| 12/24/2013 | US8614910 Semiconductor device and method for driving the same |
| 12/24/2013 | DE112010004470B4 Flächeneffiziente neuromorphe Schaltungen mittels FETs mit Material mit variablem Widerstand Efficient surface neuromorphic circuits using FETs with material of variable resistance |
| 12/24/2013 | DE102006062383B4 Halbleiterspeicherelement und System für ein Halbleiterspeicherelement The semiconductor memory device and system for a semiconductor memory element |
| 12/24/2013 | CA2710332C Mram device with shared source line |
| 12/19/2013 | WO2013187193A1 Non-volatile logic gate element |
| 12/19/2013 | US20130336079 Memory device, operation method thereof and memory system having the same |
| 12/19/2013 | US20130336046 Non-volatile memory device having multi-level cells and method of forming the same |
| 12/19/2013 | US20130336045 Spin transfer torque memory (sttm) device with half-metal and method to write and read the device |
| 12/19/2013 | US20130334469 Al-sb-te phase change material used for phase change memory and fabrication method thereof |
| 12/19/2013 | DE112012000741T5 Magnetische Stapel mit senkrechter magnetischer Anisotropie für einen magnetoresistiven Spin-Impuls-Transfer-Direktzugriffsspeicher Magnetic stack with perpendicular magnetic anisotropy for a magnetoresistive spin-momentum transfer random access memory |
| 12/19/2013 | DE112006002300B4 Vorrichtung zum Stapeln von DRAMs Device for stacking DRAMs |
| 12/19/2013 | DE102007044110B4 Verfahren und Schaltung zum Einstellen der Phasenverschiebung Method and circuit for adjusting the phase shift |
| 12/18/2013 | EP2673780A2 Memory devices with series-interconnected magnetic random access memory cells |
| 12/18/2013 | EP2673779A2 Magnetic random access memory devices configured for self-referenced read operation |
| 12/18/2013 | EP2430661B1 Magnetic tunnel junction device and fabrication |
| 12/18/2013 | CN103460375A Method of driving nonvolatile semiconductor device |
| 12/18/2013 | CN103460374A Magnetic memory |
| 12/18/2013 | CN103456353A Drive circuit used for SRAM (Static Random Access Memory) subthreshold address decoder |