Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
10/2013
10/08/2013US8553445 Semiconductor memory device having stacked structure including resistor-switched based logic circuit and method of manufacturing the same
10/08/2013US8553444 Variable resistance nonvolatile storage device and method of forming memory cell
10/08/2013US8552537 Semiconductor device and method for fabricating the same
10/03/2013WO2013149235A1 Ferroelectric random access memory (fram) layout apparatus and method
10/03/2013WO2013149040A1 A pulse clock generation logic with built-in level shifter and programmable rising edge and pulse width
10/03/2013WO2013148095A1 Non-volatile memory and method having a memory array with a high-speed, short bit-line portion
10/03/2013WO2013147938A1 Selected word line dependent programming voltage
10/03/2013WO2013147937A1 Selected word line dependent select game voltage during program
10/03/2013WO2013147936A1 Selected word line dependent select gate diffusion region voltage during programnming
10/03/2013WO2013147913A1 Delay-compensated error indication signal
10/03/2013WO2013147886A1 Virtual device sparing
10/03/2013WO2013147848A1 Memory cell with improved write margin
10/03/2013WO2013147844A1 Built-in self-test for stacked memory architecture
10/03/2013WO2013147840A1 On chip redundancy repair for memory devices
10/03/2013WO2013147831A1 Spin transfer torque based memory elements for programmable device arrays
10/03/2013WO2013147781A1 Magnetic state element and circuits
10/03/2013WO2013147746A1 Reduction of power consumption in memory devices during refresh modes
10/03/2013WO2013147733A1 Timing optimization for memory devices employing error detection coded transactions
10/03/2013WO2013147728A1 Methods and systems to read a magnetic tunnel junction (mtj) based memory cell based on a pulsed read current
10/03/2013WO2013146563A1 Semiconductor memory device
10/03/2013WO2013146039A1 Semiconductor storage device
10/03/2013US20130262743 Encoding program bits to decouple adjacent wordlines in a memory device
10/03/2013US20130258763 High capaciy low cost multi-state magnetic memory
10/03/2013US20130258762 Reference cell configuration for sensing resistance states of mram bit cells
10/03/2013US20130258761 Dual-port sram with bit line clamping
10/03/2013US20130258760 Handling of write operations within a memory device
10/03/2013US20130258759 Methods and Apparatus for SRAM Cell Structure
10/03/2013US20130258758 Single Cycle Data Copy for Two-Port SRAM
10/03/2013US20130258757 Methods And Apparatus For Synthesizing Multi-Port Memory Circuits
10/03/2013US20130258756 Vertical transistor, memory cell, device, system and method of forming same
10/03/2013US20130258755 Integrated circuit device having programmable input capacitance
10/03/2013US20130258752 Stack memory apparatus
10/03/2013US20130258751 Fram compiler and layout
10/03/2013US20130258750 Dual-cell mtj structure with individual access and logical combination ability
10/03/2013US20130258747 Method and apparatus for read assist to compensate for weak bit
10/02/2013EP2643835A1 Method and apparatus for sharing internal power supplies in integrated circuit devices
10/02/2013EP2643761A1 Dynamically configurable embedded flash memory for electronic devices
10/02/2013DE102013102720A1 Halbleitervorrichtung und Verfahren zum Herstellen derselben A semiconductor device and method of manufacturing the same
10/02/2013CN1941179B 半导体存储装置 The semiconductor memory device
10/02/2013CN103339679A Mapping data to non-volatile memory
10/02/2013CN103337253A Cascade system and method of RRAM logic device
10/02/2013CN103337252A Static random access memory (SRAM) with redundant structure
10/02/2013CN103337251A Dynamic random access memory and access method thereof
10/02/2013CN103337250A Nonvolatile variable resistive random access memory
10/02/2013CN102347066B Integrated circuit and integrated circuit method
10/02/2013CN101393965B Phase change memory device and methods of fabricating the same
10/02/2013CN101278353B 纳米线磁性随机存取存储器 Nanowires magnetic random access memory
10/01/2013US8547776 Multi-port memory based on DRAM core
10/01/2013US8547767 Chip, multi-chip system in a method for performing a refresh of a memory array
10/01/2013US8547763 Memory cell, methods of manufacturing memory cell, and memory device having the same
10/01/2013US8547753 Semiconductor device
10/01/2013US8547752 Method of reading data in non-volatile memory device, and device thereof
10/01/2013US8547751 Non-volatile storage device
10/01/2013US8547750 Methods and devices for memory reads with precharged data lines
10/01/2013US8547749 Multi-pass programming in a memory device
10/01/2013US8547746 Voltage generation and adjustment in a memory device
10/01/2013US8547745 Host-managed logical mass storage device using magnetic random access memory (MRAM)
10/01/2013US8547740 Adaptive estimation of memory cell read thresholds
10/01/2013US8547739 Methods, devices, and systems relating to a memory cell having a floating body
10/01/2013US8547738 Techniques for providing a semiconductor memory device
10/01/2013US8547737 Magnetoresistive element and magnetic memory
10/01/2013US8547736 Generating a non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junction
10/01/2013US8547735 Memory element and memory device
10/01/2013US8547734 Method of reading from and writing to magnetic random access memory (MRAM)
10/01/2013US8547733 Magnetic random access memory
10/01/2013US8547732 Hybrid superconducting-magnetic memory cell and array
10/01/2013US8547731 Memory device having a magnetic layer with a perpendicular direction of magnetization relative to a direction of magnetization of a fixed magnetization layer
10/01/2013US8547730 Method and system for providing a spin tunneling magnetic element having a crystalline barrier layer
10/01/2013US8547729 DRAM and memory array
10/01/2013US8547728 Non-volatile memory device and methods for manufacturing the same
10/01/2013US8547727 Memristive device
10/01/2013US8547726 Semiconductor memory device and controlling method thereof
10/01/2013US8547725 Method of programming a nonvolatile memory cell by reverse biasing a diode steering element to set a storage element
10/01/2013US8547721 Resistive memory device
10/01/2013US8546898 Optoelectronic light exposure memory
10/01/2013US8546897 Magnetic memory element
10/01/2013US8546867 Non-volatile memory semiconductor device
10/01/2013US8546865 Nonvolatile memory device having stacked semiconductor layers and common source line adjacent to bit line plug
10/01/2013US8546864 Three dimensional memory and methods of forming the same
10/01/2013US8546196 Non-volatile memory device and manufacturing method thereof
10/01/2013CA2677920C Word line transistor strength control for read and write in spin transfer torque magnetoresistive random access memory
09/2013
09/26/2013WO2013142713A1 Memory cells, semiconductor device structures, systems including such cells, and methods of fabrication
09/26/2013WO2013141921A1 High capacity memory systems
09/26/2013WO2013112336A3 Adaptive programming and erasure schemes for analog memory cells
09/26/2013US20130254475 Memory refresh method and devices
09/26/2013US20130250711 Memory and method of refreshing a memory
09/26/2013US20130250706 Memory module
09/26/2013US20130250678 Page buffer, memory device comprising page buffer, and related method of operation
09/26/2013US20130250674 Refreshing data of memory cells with electrically floating body transistors
09/26/2013US20130250673 Shared Bit Line SMT MRAM Array with Shunting Transistors Between Bit Lines
09/26/2013US20130250672 Shared bit line smt mram array with shunting transistors between bit lines
09/26/2013US20130250671 Thermally assisted magnetic writing device
09/26/2013US20130250670 Magnetoresistive element and writing method of magnetic memory
09/26/2013US20130250669 Scalable Magnetic Memory Cell With Reduced Write Current
09/26/2013US20130250668 Magnetic memory element, magnetic memory, and magnetic memory device
09/26/2013US20130250667 Method of reading from and writing to magnetic random access memory (mram)
09/26/2013US20130250666 Magnetic memory
09/26/2013US20130250665 Magnetic memory
09/26/2013US20130250664 Semiconductor memory device and driving method of the same
09/26/2013US20130250663 Anti-tampering devices and techniques for magnetoresistive random access memory
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