Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
09/2008
09/24/2008EP1588374B1 Floating gate analog voltage feedback circuit
09/24/2008EP1500111B1 Flexible redundancy for memories
09/24/2008CN101273456A 形状记忆装置 Shape memory device
09/24/2008CN101273412A Memory access
09/24/2008CN101271960A Phase change layers and methods of forming the same, phase change memory devices and methods of manufacturing the same
09/24/2008CN101271959A Phase-change memory device
09/24/2008CN101271918A Phase change memory device
09/24/2008CN101271728A Ferro-electric storage memory array structure for restraining small signal interference
09/24/2008CN101271727A Magnetic memory cell writing method and magnetic memory array structure
09/24/2008CN100421276C On-chip electrically alterable resistor
09/24/2008CN100421254C Ferroelectric device and method of manufacturing such a device
09/24/2008CN100421185C Semiconductor storage device
09/24/2008CN100421179C Delay circuit, ferroelectric memory device and electronic equipment
09/24/2008CN100421178C Control device for controlling self refresh operation in synchronous semiconductor memory device
09/24/2008CN100421177C Integrated memory circuit with redundant circuit and method for substituting memory zone
09/24/2008CN100421176C Semiconductor integrated circuit device and method for testing the same
09/24/2008CN100421175C Defect unit address programing circuit and method for programing defect unit address
09/24/2008CN100421174C Stacked layered type semiconductor memory device
09/24/2008CN100421173C Storage circuit, semiconductor device, and electronic apparatus
09/24/2008CN100421172C Magnetic tunnel junction memory cell architecture
09/24/2008CN100421171C Non-volatile memory circuit, drive method thereof, semiconductor device using the memory circuit
09/23/2008US7428720 Standard cell for a CAD system
09/23/2008US7428687 Memory controller method and system compensating for memory cell data losses
09/23/2008US7428286 Duty cycle correction apparatus and method for use in a semiconductor memory device
09/23/2008US7428182 Electronic circuit system, and signal transmission method, to improve signal transmission efficiency and simplify signal transmission management
09/23/2008US7428181 Semiconductor device with self refresh test mode
09/23/2008US7428174 Semiconductor flash memory
09/23/2008US7428172 Concurrent programming and program verification of floating gate transistor
09/23/2008US7428171 Non-volatile memory and method with improved sensing
09/23/2008US7428168 Semiconductor memory device sharing a data line sense amplifier and a write driver in order to reduce a chip size
09/23/2008US7428167 Semiconductor integrated circuit and nonvolatile memory element
09/23/2008US7428166 Non-volatile memory device and method of preventing hot electron program disturb phenomenon
09/23/2008US7428164 Semiconductor memory device
09/23/2008US7428163 Method and memory circuit for operating a resistive memory cell
09/23/2008US7428162 Memory device including a plurality of capacitors
09/23/2008US7428161 Semiconductor memory device with MOS transistors each having floating gate and control gate
09/23/2008US7428160 Nonvolatile programmable logic circuit
09/23/2008US7427818 Relaxor ferroelectric solid-solution single crystal, device, and method of using device
09/23/2008US7427514 Passivated magneto-resistive bit structure and passivation method therefor
09/23/2008US7427031 Semiconductor memory device
09/23/2008CA2355082C A semiconductor memory card access apparatus, a computer-readable recording medium, an initialization method, and a semiconductor memory card
09/18/2008WO2008111058A2 Adaptive estimation of memory cell read thresholds
09/18/2008WO2008088710A3 Improved multi-level memory
09/18/2008WO2008016932A3 Method and apparatus for passive element memory array incorporating reversible polarity word line and bit line decoders
09/18/2008WO2007106635A3 Switch device and method
09/18/2008WO2007099579A8 Ram macro and timing generating circuit for same
09/18/2008US20080225618 Non-Volatile Semiconductor Memory
09/18/2008US20080225606 Data output circuit and method in ddr synchronous semiconductor device
09/18/2008US20080225600 Method of reading data in a non-volatile memory device
09/18/2008US20080225597 Method of detecting an under program cell in a non-volatile memory device and method of programming the under program cell using the same
09/18/2008US20080225595 Charge trap type non-volatile memory device and program method thereof
09/18/2008US20080225588 Capacitorless DRAM and method of manufacturing and operating the same
09/18/2008US20080225587 Integrated Circuits, Methods for Manufacturing Integrated Circuits, Integrated Memory Arrays
09/18/2008US20080225586 Low Magnetization Materials for High Performance Magnetic Memory Devices
09/18/2008US20080225585 Low Cost Multi-State Magnetic Memory
09/18/2008US20080225584 Magnetic storage element responsive to spin polarized current
09/18/2008US20080225583 Spin transfer MRAM device with novel magnetic free layer
09/18/2008US20080225582 Thin film magnetic memory device capable of conducting stable data read and write operations
09/18/2008US20080225581 Memory device and memory
09/18/2008US20080225580 Resistance variable memory with temperature tolerant materials
09/18/2008US20080225579 Memory architecture and method of manufacture and operation thereof
09/18/2008US20080225578 Structure for increasing effective transistor witdth in memory arrays with dual bitlines
09/18/2008US20080225577 Magnetic random access memory, and write method and manufacturing method of the same
09/18/2008US20080225576 Method of magnetic tunneling junction pattern layout for magnetic random access memory
09/18/2008US20080225575 Multi-state memory and multi-functional devices comprising magnetoplastic or magnetoelastic materials
09/18/2008US20080225574 Memory cell with independent-gate controlled access devices and memory using the cell
09/18/2008US20080225573 Static random access memory cell with improved stability
09/18/2008US20080225572 Circuit arrays having cells with combinations of transistors and nanotube switching elements
09/18/2008US20080225571 Complementary bit PCRAM sense amplifier and method of operation
09/18/2008US20080225570 Over-driven access method and device for ferroelectric memory
09/18/2008US20080225569 Ferroelectric capacitor and its manufacturing method
09/18/2008US20080225144 Multi-purpose image sensor circuits, imager, system and method of operation
09/18/2008US20080224178 Resistive memory and method
09/18/2008US20080224145 Semiconductor device formed on (111) surface of a Si crystal and fabrication process thereof
09/18/2008DE10252492B4 Schaltung und Verfahren zur Dateneingabe für ein synchrones Halbleiterspeicherbauelement Circuit and method for data input for a synchronous semiconductor memory device
09/18/2008DE10238494B4 Verfahren zur Detektion eines Logikzustands und zugehörige integrierte Halbleiterschaltung A method for detecting a logic state and related semiconductor integrated circuit
09/18/2008DE102008014310A1 Verfahren und System zum Austritt aus einer leistungssparenden Betriebsart eines Speichers Method and system for exit from a power-saving mode of a memory
09/18/2008DE102004033450B4 Halbleiterspeicherbaustein, Spannungsgenerator und Programmierunterstützungsverfahren Semiconductor memory device, and programming voltage generator support method
09/17/2008EP1970912A1 Semiconductor memory, memory controller, system, and operating method of semiconductor memory
09/17/2008EP1970911A1 Spin-polarised current driven magnetic memory device and memory
09/17/2008EP1639604B1 Method and apparatus for partial refreshing of drams
09/17/2008EP1454321B1 Asymmetric mram cell and bit design for improving bit yield
09/17/2008CN101268519A Programming non-volatile memory with self-adjusting maximum program loop
09/17/2008CN101267017A A tube phase change memory unit structure and its making method
09/17/2008CN101267016A Improved phase change memory unit component structure
09/17/2008CN101266981A Semiconductor memory device
09/17/2008CN101266834A Writing drive method and system for phase change memory
09/17/2008CN101266833A Semiconductor memory, memory controller, system, and operating method of semiconductor memory
09/17/2008CN101266832A A data reading and acceleration device and method for iron electric memory
09/17/2008CN101266831A Memory device and memory
09/17/2008CN100419914C Apparatus and method for a memory storage cell leakage cancellation scheme
09/17/2008CN100419913C Low power consumption static random memory with low level thread amplitude of oscillation
09/17/2008CN100419912C Digital delay locked loop and control method thereof
09/17/2008CN100419911C Power-up circuit in semiconductor memory device
09/17/2008CN100419910C Memory with memory component
09/17/2008CN100419909C Strong inductor memory and its action method and memory device
09/17/2008CN100419908C Semiconductor memory device, method for driving the same and portable electronic appararus
09/17/2008CN100419907C Ferroelectric memory device, electronic apparatus and driving method
09/17/2008CN100419906C Memory cell
09/17/2008CN100419905C Magnetic random access memory device having thermal agitation property and high write efficiency
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