Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
11/2008
11/26/2008CN100437833C Calibrating method and memory system
11/26/2008CN100437827C Using multiple status bits per cell for handling power failures during write operations
11/26/2008CN100437826C Control device and method for double speed dynamic random access storage with asynchronous buffer
11/26/2008CN100437825C Digital signal processor
11/26/2008CN100437824C Data pass control device for masking write ringing in ddr sdram and method thereof
11/26/2008CN100437823C Semiconductor memory
11/26/2008CN100437822C Semiconductor storing device
11/26/2008CN100437821C Method for controlling current during read and program operations of programmable diode
11/26/2008CN100437820C Data erasing method, and memory apparatus having data erasing circuit using such method
11/26/2008CN100437819C Ferroelectric memory and method for reading data from the ferroelectric memory
11/26/2008CN100437818C MRAM architecture with electrically isolated read and write circuitry
11/26/2008CN100437817C Magnetic random access storage based on circular magnetic multilayer film and its control method
11/26/2008CN100437816C Magnetoresistive memory devices and assemblies, and methods of storing and retrieving information
11/26/2008CN100437815C Device for generating a bit line selection signal of a memory device
11/26/2008CN100437814C Memory element with built-in error connecting function
11/26/2008CN100437725C Impulsive driving liquid crystal display and driving method thereof
11/26/2008CN100437527C Memory device with built-in test function and method for controlling the same
11/25/2008US7458004 Semiconductor storage device
11/25/2008US7458002 Processor having electronic fuses for storing secret data
11/25/2008US7457997 Apparatus and method for detecting over-programming condition in multistate memory device
11/25/2008US7457996 Semiconductor integrated circuit capable of testing with small scale circuit configuration
11/25/2008US7457908 Integrated memory device with multi-sector selection commands
11/25/2008US7457392 Delay locked loop
11/25/2008US7457192 Semiconductor memory device and module for high frequency operation
11/25/2008US7457189 Integrated circuit memory devices that support selective mode register set commands and related methods
11/25/2008US7457184 Dielectric relaxation memory
11/25/2008US7457182 Semiconductor memory including self-timing circuit
11/25/2008US7457172 Memory device and method having data path with multiple prefetch I/O configurations
11/25/2008US7457168 Non-volatile memory device and associated method of erasure
11/25/2008US7457167 Method for preventing over-erasing of unused column redundant memory cells in a flash memory having single-transistor memory cells
11/25/2008US7457166 Erase voltage manipulation in non-volatile memory for controlled shifts in threshold voltage
11/25/2008US7457164 Semiconductor memory device and electronic apparatus
11/25/2008US7457162 Multi-state memory
11/25/2008US7457161 Nonvolatile memory apparatus
11/25/2008US7457160 Methods of applying read voltages in NAND flash memory arrays
11/25/2008US7457159 Integrated DRAM-NVRAM multi-level memory
11/25/2008US7457156 NAND flash depletion cell structure
11/25/2008US7457154 High density memory array system
11/25/2008US7457152 Non-volatile memory devices and systems including phase-change one-time-programmable (OTP) memory cells and related methods
11/25/2008US7457151 Phase change random access memory (PRAM) device having variable drive voltages
11/25/2008US7457150 Semiconductor memory
11/25/2008US7457149 Methods and apparatus for thermally assisted programming of a magnetic memory device
11/25/2008US7457148 Compact and highly efficient DRAM cell
11/25/2008US7457147 Two terminal memory array having reference cells
11/25/2008US7457146 Memory cell programmed using a temperature controlled set pulse
11/25/2008US7457145 Write/delete process for resistive switching memory components
11/25/2008US7456861 Digital camera that incorporates an authentication arrangement for application to consumable print rolls
11/25/2008US7456778 Method and apparatus for calibrating a multi-level current mode driver having a plurality of source calibration signals
11/25/2008US7456680 Internal voltage generating circuit and semiconductor integrated circuit device
11/25/2008US7456666 Frequency-doubling delay locked loop
11/25/2008US7456486 Semiconductor integrated circuit device and process for manufacturing the same
11/25/2008US7456054 Gated lateral thyristor-based random access memory cell (GLTRAM)
11/25/2008US7455795 Polythiophenes; semiconductors
11/20/2008WO2008140689A2 Biorprocess data management
11/20/2008WO2008138193A1 Recordable electrical memory
11/20/2008WO2008048280A3 Reconfigurable logic structures
11/20/2008WO2008013619A3 Method and apparatus for programming phase change devices
11/20/2008US20080288836 Semiconductor integrated circuit capable of testing with small scale circuit configuration
11/20/2008US20080285428 System and Method for Forming Nanodisks Used in Imprint Lithography and Nanodisk and Memory Disk Formed Thereby
11/20/2008US20080285375 Semiconductor device, module including the semiconductor device, and system including the module
11/20/2008US20080285372 Multi- port memory device for buffering between hosts and non-volatile memory devices
11/20/2008US20080285370 Semiconductor memory and system
11/20/2008US20080285362 Semiconductor memory device
11/20/2008US20080285360 Semiconductor Memory Device and Method of Reading Data Therefrom
11/20/2008US20080285354 Self reference sensing system and method
11/20/2008US20080285350 Circuit and method for a three dimensional non-volatile memory
11/20/2008US20080285349 Nonvolatile memory with backplate
11/20/2008US20080285344 Integrated Circuits; Methods for Manufacturing an Integrated Circuit; Memory Modules; Computing Systems
11/20/2008US20080285342 Method of Programming a Nonvolatile Memory Cell and Related Memory Array
11/20/2008US20080285339 Voltage reference generator using big flash cell
11/20/2008US20080285338 Determining history state of data in data retaining device based on state of partially depleted silicon-on-insulator
11/20/2008US20080285337 Recordable electrical memory
11/20/2008US20080285336 Semiconductor device
11/20/2008US20080285335 Programmable fuse/non-volatile memory structures using externally heated phase change material
11/20/2008US20080285334 Local bank write buffers for accelerating a phase-change memory
11/20/2008US20080285333 Electric Device Comprising Phase Change Material
11/20/2008US20080285332 Bit-Alterable, Non-Volatile Memory Management
11/20/2008US20080285331 Scalable nonvolatile memory
11/20/2008US20080285330 Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states
11/20/2008US20080285329 Recordable electrical memory
11/20/2008US20080285328 Phase Change Memory
11/20/2008US20080285327 Ferroelectric Memory and Semiconductor Memory
11/20/2008US20080285323 Method and Arrangement for Associative Memory Device Based on Ferrofluid
11/20/2008US20080285322 Junction field effect dynamic random access memory cell and content addressable memory cell
11/20/2008US20080285185 Semiconductor integrated circuit
11/20/2008US20080283901 Nonvolatile memory with multiple bits per cell
11/20/2008US20080283888 Spin transistor, programmable logic circuit, and magnetic memory
11/20/2008US20080283814 Phase-change memory element
11/20/2008US20080283616 Memory Device and Semiconductor Device
11/20/2008DE102008018955A1 Auf Strombereich abgestimmte Messarchitektur für Multipegel-Phasenänderungsspeicher Tailored to current range measurement architecture for multi-level phase change memory
11/20/2008DE102007023024A1 Component e.g. dynamic RAM, for memory component module of electronic system, has precharging/homogenizing circuit with N channel MOSFET, whose diffusion area is separated from diffusion area of two N channel MOSFETs
11/19/2008EP1993101A2 Measuring threshold voltage distribution in memory using an aggregate characteristic
11/19/2008EP1993100A2 Memory device, memory controller and memory system
11/19/2008EP1993099A2 Memory device, memory controller and memory system
11/19/2008EP1993098A1 MRAM cell with multiple storage elements
11/19/2008EP1384232A4 Dynamic data restore in thyristor-based memory device
11/19/2008EP1319231A4 Programmable molecular device
11/19/2008CN101310343A Memory diagnosis device
11/19/2008CN101308903A Phase-change memory element
11/19/2008CN101308902A Phase changeable storage device and manufacture method thereof
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