Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
08/2008
08/28/2008US20080205149 Method of programming non-volatile memory device
08/28/2008US20080205136 Read method of memory device
08/28/2008US20080205133 Capacitor-less volatile memory cell, device, system and method of making same
08/28/2008US20080205132 Memory Element and Semiconductor Device, and Method for Manufacturing the Same
08/28/2008US20080205131 Magnetic random access memory with selective toggle memory cells
08/28/2008US20080205130 Mram free layer synthetic antiferromagnet structure and methods
08/28/2008US20080205129 Non-volatile magnetic memory device
08/28/2008US20080205128 Phase change memory device
08/28/2008US20080205127 Phase change storage cells for memory devices
08/28/2008US20080205126 Magnetic random access memory
08/28/2008US20080205125 Magnetic random access memory and write method thereof
08/28/2008US20080205124 Semiconductor memory device and data write and read methods of the same
08/28/2008US20080205123 Magnetic random access memory and method of reducing critical current of the same
08/28/2008US20080205122 Mram memory conditioning
08/28/2008US20080205121 Current driven memory cells having enhanced current and enhanced current symmetry
08/28/2008US20080205120 Multiple layer random accessing memory
08/28/2008US20080205119 Non-volatile semiconductor memory device
08/28/2008US20080205118 Integrated circuit having a resistive switching device
08/28/2008US20080205117 Semiconductor integrated circuit device
08/28/2008US20080205116 Three-dimensional magnetic memory
08/28/2008US20080205114 Semiconductor memory device and method of operating same
08/28/2008US20080205111 Semiconductor memory device and defect remedying method thereof
08/28/2008US20080205110 Digital Magnetic Current Sensor and Logic
08/28/2008US20080204562 Camera system having serially connected camera devices to facilitate a cascade of imaging effects
08/28/2008US20080204519 Inkjet Printhead With Laterally Reciprocating Paddle
08/28/2008US20080204518 Inkjet Printer With Low Nozzle To Chamber Cross-Section Ratio
08/28/2008US20080204067 Synchronous semiconductor device, and inspection system and method for the same
08/28/2008US20080203554 Semiconductor integrated circuit device
08/28/2008US20080203437 Semiconductor integrated circuit device with reduced leakage current
08/28/2008US20080203403 Semiconductor integrated circuit
08/28/2008DE20023985U1 Barrierenschichten für ferroelektrische Speichervorrichtungen Barrier layers for ferroelectric memory devices
08/28/2008DE19964480B4 Verfahren zum Herstellen einer nichtflüchtigen ferroelektrischen Speicherzelle vom NAND-Typ A method of manufacturing a non-volatile ferroelectric memory cell of the NAND type
08/28/2008DE10244429B4 Halbleiterspeichervorrichtung mit adaptivem Ausgangstreiber Semiconductor memory device with adaptive output driver
08/28/2008DE102008008361A1 Magnetwiderstandseffektelement und magnetische Speichervorrichtung The magnetoresistance effect element, and magnetic memory device
08/28/2008DE102007019825A1 Integrierte Schaltung, Verfahren zum Lesen von Daten aus einer Speichervorrichtung einer integrierten Schaltung, Verfahren zum Schreiben von Daten in eine Speichervorrichtung einer integrierten Schaltung, Speichermodul sowie Computerprogramm Integrated circuit A method of reading data from a memory device of an integrated circuit, A method for writing data in a memory device of an integrated circuit, memory module and computer program
08/28/2008DE102006042727B4 Speicherelement zur Verbesserung der Zuverlässigkeit eines Speicherelements Storage element for improving the reliability of a storage element
08/28/2008DE102004024841B4 Halbleiterspeicherbaustein und zugehöriges Treiberverfahren Semiconductor memory device and associated drive method
08/27/2008EP1962290A1 SRAM with switchable power supply sets of voltages
08/27/2008EP1961011A1 Single level cell programming in a multiple level cell non-volatile memory device
08/27/2008EP1568036B1 Sdram address mapping optimized for two-dimensional access
08/27/2008EP1297533B1 Magnetic memory
08/27/2008CN101253572A Memory architecture with enhanced over-erase tolerant control gate scheme
08/27/2008CN101253571A Persistent volatile memory cell
08/27/2008CN101252170A Full epitaxial electric resistance changing to multi-layer films based on silicon substrate, method and application thereof
08/27/2008CN101252169A Phase change memory device and method of fabricating the same
08/27/2008CN101252168A Phase change memory cell with heater and method for fabricating the same
08/27/2008CN101252167A Programmable resistive memory cell with self-forming gap
08/27/2008CN101252166A Magnetoresistive device, magnetic head, magnetic storage apparatus, and magnetic memory
08/27/2008CN101252144A 存储器件和存储器 And a memory storage device
08/27/2008CN101252143A Method and apparatus for bitline and contact via integration in magnetic random access memory arrays
08/27/2008CN101252018A Ferro-electricity programming information memory cell using new type sequential operation
08/27/2008CN101252016A Write-once optical disc, and method and apparatus for allocating spare area on write-once optical disc
08/27/2008CN100414839C Control circuit and reconfigurable logic block
08/27/2008CN100414707C Semiconductor memory device
08/27/2008CN100414645C Random-access memory devices comprising deoded buffer
08/27/2008CN100414644C Voltage generating circuit
08/27/2008CN100414643C Power supply start reset release device and method
08/27/2008CN100414642C Memory array with independent double nonvolatile memory and its making method
08/27/2008CN100414624C Improved electron emitting device for data storage application and its making method
08/26/2008US7418574 Configuring a portion of a pipeline accelerator to generate pipeline date without a program instruction
08/26/2008US7417914 Semiconductor memory device
08/26/2008US7417911 Semiconductor memory device having hierarchically structured data lines and precharging means
08/26/2008US7417899 Method of verifying flash memory device
08/26/2008US7417898 Non-volatile semiconductor memory device
08/26/2008US7417897 Method for reading a single-poly single-transistor non-volatile memory cell
08/26/2008US7417895 Nor flash memory and erase method thereof
08/26/2008US7417894 Single latch data circuit in a multiple level cell non-volatile memory device
08/26/2008US7417893 Integrated DRAM-NVRAM multi-level memory
08/26/2008US7417892 Electric device with readable storage data
08/26/2008US7417891 Phase change memory device having semiconductor laser unit
08/26/2008US7417890 Semiconductor memory device
08/26/2008US7417889 Independent-gate controlled asymmetrical memory cell and memory using the cell
08/26/2008US7417887 Phase change memory device and method of driving word line thereof
08/26/2008US7417886 Ferroelectric random access memory
08/26/2008US7417885 Data carrier system and data saving/restoring method thereof
08/26/2008US7417838 Semiconductor integrated circuit
08/26/2008US7416993 Patterned nanowire articles on a substrate and methods of making the same
08/26/2008US7416282 Printhead having common actuator for inkjet nozzles
08/26/2008US7416280 Inkjet printhead with hollow drop ejection chamber formed partly of actuator material
08/21/2008WO2008100873A2 A low cost multi-state magnetic memory
08/21/2008WO2008100872A2 An improved high capacity low cost multi-state magnetic memory
08/21/2008WO2008100871A2 Non-volatile magnetic memory element with graded layer
08/21/2008WO2008100869A2 Non-volatile magnetic memory with low switching current and high thermal stablity
08/21/2008WO2008100868A2 Non-uniform switching based non-volatile magnetic based memory
08/21/2008WO2008099348A2 Semiconductor device identifier generation
08/21/2008WO2008098367A1 Clock mode determination in a memory system
08/21/2008WO2008098349A1 Semiconductor device and method for selection and de-selection of memory devices interconnected in series
08/21/2008WO2007059402A3 Flash memory sensing scheme
08/21/2008WO2005124558A3 Method and system for optimizing the number of word line segments in a segmented mram array
08/21/2008US20080198669 Method of operating non-volatile memory
08/21/2008US20080198666 Semiconductor device including adjustable driver output impedances
08/21/2008US20080198665 Variable initial program voltage magnitude for non-volatile storage
08/21/2008US20080198664 Non-volatile storage apparatus with multiple pass write sequence
08/21/2008US20080198662 Dynamic verify based on threshold voltage distribution
08/21/2008US20080198661 Non-volatile storage apparatus with variable initial program voltage magnitude
08/21/2008US20080198660 Multiple pass write sequence for non-volatile storage
08/21/2008US20080198653 Circuit arrangement and method for operating a circuit arrangement
08/21/2008US20080198651 Non-volatile memory with dynamic multi-mode operation
08/21/2008US20080198649 Memory device and method of manufacturing a memory device
08/21/2008US20080198648 Writing method for magnetic memory cell and magnetic memory array structure
1 ... 223 224 225 226 227 228 229 230 231 232 233 234 235 236 237 238 239 240 241 242 243 ... 761