Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
10/2008
10/02/2008US20080239818 Three dimensional nand memory
10/02/2008US20080239815 Semiconductor device and manufacturing method thereof
10/02/2008US20080239814 Non-volatile memory device and method for fabricating the same
10/02/2008US20080239813 Method of Compensating Variations along a Word Line in a Non-Volatile Memory
10/02/2008US20080239808 Flash Memory Refresh Techniques Triggered by Controlled Scrub Data Reads
10/02/2008US20080239804 Method for reading multiple-value memory cells
10/02/2008US20080239803 Memory cells, memory devices and integrated circuits incorporating the same
10/02/2008US20080239801 Load Management for Memory Device
10/02/2008US20080239800 Magnetic memory arrays
10/02/2008US20080239799 Nonvolatile semiconductor memory device and data erase/write method thereof
10/02/2008US20080239798 Compensation circuit and memory with the same
10/02/2008US20080239797 Information recording/reproducing device
10/02/2008US20080239796 Magnetic memory device and method of writing into the same
10/02/2008US20080239795 Nonvolatile memory device with write error suppressed in reading data
10/02/2008US20080239794 Magnetoresistive random access memory device with small-angle toggle write lines
10/02/2008US20080239793 Generalized Interlocked Register Cell (GICE)
10/02/2008US20080239792 Metal silicide alloy local interconnect
10/02/2008US20080239791 Nano-Electronic Memory Array
10/02/2008US20080239790 Method to form a memory cell comprising a carbon nanotube fabric element and a steering element
10/02/2008US20080239789 Semiconductor memory device
10/02/2008US20080239788 Integrated circuit having a resistively switching memory and method
10/02/2008US20080239787 Large array of upward pointing p-i-n diodes having large and uniform current
10/02/2008US20080239784 High density planar magnetic domain wall memory apparatus
10/02/2008US20080237673 Semiconductor device, charge pumping circuit, and semiconductor memory circuit
10/02/2008US20080235939 Manufacturing Method For Micro-SD Flash Memory Card
10/02/2008DE19732694B4 Nichtflüchtiges ferroelektrisches Speicherbauelement The non-volatile ferroelectric memory device
10/02/2008DE10335012B4 Halbleiterspeicherbauelement mit mehreren Speicherfeldern und zugehöriges Datenverarbeitungsverfahren A semiconductor memory device having a plurality of memory arrays and associated data processing method
10/02/2008DE102007017642A1 Prüfschaltungsanordnung Test circuit
10/01/2008EP1975942A1 Non-volatile semiconductor memory with large erase blocks storing cycle counts
10/01/2008EP1975941A1 Semiconductor memory, system, and operating method of semiconductor memory
10/01/2008CN101278354A Multiple independent serial link memory
10/01/2008CN101278353A 纳米线磁性随机存取存储器 Nanowires magnetic random access memory
10/01/2008CN101278352A Daisy chain cascading devices
10/01/2008CN101277897A Non-volatile memory device
10/01/2008CN101276880A Storing unit and manufacturing method thereof
10/01/2008CN101276879A Double freedom layer vertical ferromagnetism tunnel junction structure
10/01/2008CN101276878A Magneto-resistance effect element, and method for manufacturing the same
10/01/2008CN101276643A Write-in method and system of phase variation memory
10/01/2008CN101276642A Method and apparatus for controlling read latency of high-speed dram
10/01/2008CN101276641A Semiconductor memory device
10/01/2008CN101276640A Semiconductor memory, system, and operating method of semiconductor memory
10/01/2008CN101276639A Memorization body and operation method thereof
10/01/2008CN101276638A Semiconductor memory device using ferroelectric device and method for refresh thereof
10/01/2008CN100423421C Semiconductor integrated circuit device
10/01/2008CN100423313C Magnetoresistive device with exchange-coupled structure having half-metallic ferromagnetic heusler alloy in the pinned layer
10/01/2008CN100423272C Semiconductor storage device and its operating method,semiconductordevice and portable electronic device
10/01/2008CN100423268C Low voltage semiconductor memory device
10/01/2008CN100423233C Method of fabricating nano-scale resistance cross-point memory array and device
10/01/2008CN100423133C Integrated circuit containing SRAM memory and method of testing same
10/01/2008CN100423128C Semiconductor stroage device with storage unit of low unit ratio
10/01/2008CN100423127C Nonvolatile memory and driving method thereof
10/01/2008CN100423126C Cascode sense amp and column select circuit and method of operation
10/01/2008CN100422971C Signal transmitting device suited to fast signal transmission
10/01/2008CN100422908C Memory device having high bus efficiency of network, operating method of the same, and memory system including the same
10/01/2008CN100422599C Transmission control system
09/2008
09/30/2008US7430150 Method and system for providing sensing circuitry in a multi-bank memory device
09/30/2008US7430138 Erasing non-volatile memory utilizing changing word line conditions to compensate for slower erasing memory cells
09/30/2008US7430135 Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current density
09/30/2008US7430134 Memory cell structure of SRAM
09/30/2008US7430041 Semiconductor storage apparatus
09/30/2008US7430024 Active matrix substrate and display device
09/30/2008US7429883 Oscillator configured to complete an output pulse after inactivation
09/30/2008US7429879 Clock receiver circuit device, in particular for semi-conductor components
09/30/2008US7429762 Semiconductor device and method of fabricating the same
09/25/2008WO2008115874A1 Adjusting resistance of non-volatile memory using dummy memory cells
09/25/2008WO2008115832A1 Division-based sensing and partitioning of electronic memory
09/25/2008WO2008115625A2 Method and apparatus for operating storage controller system in elevated temperature environment
09/25/2008WO2008114716A1 Sram device
09/25/2008WO2008089160A3 Sense architecture
09/25/2008WO2007087097A3 Nonvolatile memory and method of program inhibition
09/25/2008WO2007082227A3 Multiple port memory having a plurality of parallel connected trench capacitors in a cell
09/25/2008US20080234997 Design Structure for Compensating for Variances of a Buried Resistor in an Integrated Circuit
09/25/2008US20080232173 Non-volatile memory having a row driving circuit with shared level shift circuits
09/25/2008US20080232172 Flash memory device and method of controlling program voltage
09/25/2008US20080232171 Phase change memory with program/verify function
09/25/2008US20080232169 Nand-like memory array employing high-density nor-like memory devices
09/25/2008US20080232168 Level shift circuit which improved the blake down voltage
09/25/2008US20080232164 Method for programming a multilevel memory
09/25/2008US20080232163 Memory storage technique for a bi-directionally programmable memory device
09/25/2008US20080232161 Resistance variable memory device and read method thereof
09/25/2008US20080232160 Rectifying element for a crosspoint based memory array architecture
09/25/2008US20080232159 PHASE-CHANGE TaN RESISTOR BASED TRIPLE-STATE/MULTI-STATE READ ONLY MEMORY
09/25/2008US20080232158 Optimized phase change write method
09/25/2008US20080232156 Method using a synthetic molecular spring device in a system for dynamically controlling a system property and a corresponding system thereof
09/25/2008US20080232155 Molecular battery memory device and data processing system using the same
09/25/2008US20080232154 Resistance memory element and method of manufacturing the same, and semiconductor memory device
09/25/2008US20080232153 Non-volatile memory device
09/25/2008US20080232149 Integrated circuit chip with improved array stability
09/25/2008US20080231392 Method of Generating Strong Spin Waves and Spin Devices for Ultra-High Speed Information Processing Using Spin Waves
09/25/2008US20080231323 Integrated circuit chip with improved array stability
09/25/2008US20080230851 Metal oxide semiconductor (mos) type semiconductor device and manufacturing method thereof
09/25/2008US20080230819 Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plan equilibrium magnetization
09/25/2008US20080230763 Metallic Nanospheres Embedded in Nanowires Initiated on Nanostructures and Methods for Synthesis Thereof
09/25/2008DE10322364B4 Datenpuffer und Halbleiterspeicher sowie zugehöriges Verfahren zur Verzögerungszeitsteuerung Data buffer and semiconductor memory and associated method for delay control
09/25/2008DE10309919B4 Pufferbaustein und Speichermodule Buffer chip and memory modules
09/25/2008DE10307912B4 Speichersteuerschaltung, Halbleiterspeicherschaltung und Halbleiterspeichersystem und zugehörige Speichersteuer- und Datenschreibverfahren Memory control circuit, semiconductor memory circuit and semiconductor memory system and associated memory control and data writing method
09/25/2008DE102007013314A1 Konzept zur Reduktion von Übersprechen Concept for reducing crosstalk
09/25/2008DE10104265B4 Verfahren zum Herstellen einer Halbleiterschaltungsanordnung A method for fabricating a semiconductor circuit arrangement
09/25/2008CA2668351A1 Electronic devices based on current induced magnetization dynamics in single magnetic layers
09/24/2008EP1973178A2 Magnetoresistance effect device and method of production of the same
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