Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
12/2008
12/10/2008EP1803128A4 Thermomagnetically assisted spin-momentum-transfer switching memory
12/10/2008CN101320784A Write-Once Read-Many electric storage member and preparation method thereof
12/10/2008CN101320783A Phase variation memory
12/10/2008CN101320593A Predictive timing calibration for memory devices
12/10/2008CN100442566C Phase-change storage and its manufacturing method
12/10/2008CN100442521C Semiconductor memory device
12/10/2008CN100442518C Method for improving the read signal in a memory having passive memory elements
12/10/2008CN100442503C Semiconductor integrated circuit device
12/10/2008CN100442434C Semiconductor memory having segmented row repair
12/10/2008CN100442394C Semiconductor memory device and method for controlling semiconductor memory device
12/10/2008CN100442392C Output device of static RAM
12/10/2008CN100442391C Digit line precharging circuit of semiconductor storage device
12/10/2008CN100442390C Forming phase change memories
12/10/2008CN100442389C Method and system to store information
12/10/2008CN100442388C Using a MOS select gate for a phase change memory
12/10/2008CN100442387C Ferroelectric memory device and electronic apparatus
12/10/2008CN100442386C Semiconductor memory device
12/10/2008CN100442385C Magnetic random access memory element with unparalleled main magnetic resistance and reference resistance
12/10/2008CN100442384C Magnetic memory element for controlling nucleation position in data layer
12/09/2008US7464315 Semiconductor memory device
12/09/2008US7464131 Logical calculation circuit, logical calculation device, and logical calculation method
12/09/2008US7463540 Nonvolatile semiconductor memory
12/09/2008US7463533 Nonvolatile semiconductor storage device
12/09/2008US7463532 Comprehensive erase verification for non-volatile memory
12/09/2008US7463530 Operating method of non-volatile memory device
12/09/2008US7463529 Word line driving circuit putting word line into one of high level, low level and high impedance
12/09/2008US7463528 Temperature compensation of select gates in non-volatile memory
12/09/2008US7463526 Programming method for flash memory capable of compensating reduction of read margin between states due to high temperature stress
12/09/2008US7463524 Reading and writing method for non-volatile memory with multiple data states
12/09/2008US7463523 Semiconductor memory device and method of driving a semiconductor memory device
12/09/2008US7463521 Method for non-volatile memory with managed execution of cached data
12/09/2008US7463520 Memory device with variable trim settings
12/09/2008US7463517 Semiconductor integrated circuit and nonvolatile memory element
12/09/2008US7463516 Flash memories with adaptive reference voltages
12/09/2008US7463514 Multi-level cell serial-parallel sense scheme for non-volatile flash memory
12/09/2008US7463513 Micro-machinery memory device
12/09/2008US7463512 Memory element with reduced-current phase change element
12/09/2008US7463511 Phase change memory device using multiprogramming method
12/09/2008US7463510 High-bandwidth magnetoresistive random access memory devices
12/09/2008US7463509 Magneto-resistive RAM having multi-bit cell array structure
12/09/2008US7463508 SRAM test method and SRAM test arrangement to detect weak cells
12/09/2008US7463507 Memory device with a plurality of memory cells, in particular PCM memory cells, and method for operating such a memory cell device
12/09/2008US7463506 Memory device, memory circuit and semiconductor integrated circuit having variable resistance
12/09/2008US7463505 Semiconductor memory device and electronic apparatus
12/09/2008US7463504 Active float for the dummy bit lines in FeRAM
12/09/2008US7463502 Ultra low-cost solid-state memory
12/09/2008US7463058 Programmable array logic circuit employing non-volatile ferromagnetic memory cells
12/09/2008US7461931 Method and apparatus for protecting a print engine assembly from print media pulling
12/09/2008US7461924 Printhead having inkjet actuators with contractible chambers
12/09/2008US7461923 Inkjet printhead having inkjet nozzle arrangements incorporating dynamic and static nozzle parts
12/09/2008CA2578837C High speed otp sensing scheme
12/04/2008WO2008148065A1 Non-volatile memory with high reliability
12/04/2008WO2008147604A1 Bitcell with variable-conductance transfer gate and method thereof
12/04/2008WO2008147537A1 Sense transistor protection for memory programming
12/04/2008WO2008146610A1 Magnetic storage device
12/04/2008WO2008146553A1 Magnetic random access memory
12/04/2008WO2008145186A1 Floating-body dram cell capacitively coupled to an electrode in an sti region and fabrication method thereof
12/04/2008WO2008115291A3 Electronic devices based on current induced magnetization dynamics in single magnetic layers
12/04/2008WO2008088710B1 Improved multi-level memory
12/04/2008WO2008082591A3 High speed interface for multi-level memory
12/04/2008WO2008055099A3 Memory bus output driver of a multi-bank memory device and method therefor
12/04/2008WO2008027681A3 Non-volatile memory device and method having bit-state assignments selected to minimize signal coupling
12/04/2008WO2008010957A3 Method and system for using a pulsed field to assist spin transfer induced switching of magnetic memory elements
12/04/2008WO2007143393A3 Method and system for providing a magnetic memory structure utilizing spin transfer
12/04/2008WO2007100939A3 Non-volatile memory having a multiple block erase mode and method therefor
12/04/2008US20080299680 Methods of forming magnetic memory devices
12/04/2008US20080298135 Metal oxide semiconductor device and method for operating an array structure comprising the same devices
12/04/2008US20080298131 Integrated circuit featuring a non-volatile memory with charge/discharge ramp rate control and method therefor
12/04/2008US20080298129 Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell
12/04/2008US20080298125 Semiconductor device
12/04/2008US20080298124 Parallel programming of multiple-bit-per-cell memory cells by controlling program pulsewidth and programming voltage
12/04/2008US20080298123 Non-volatile memory cell healing
12/04/2008US20080298122 Biasing a phase change memory device
12/04/2008US20080298121 Method of operating phase-change memory
12/04/2008US20080298120 Peripheral Devices Using Phase-Change Memory
12/04/2008US20080298119 Magnetic memory cell with multiple-bit in stacked strucrute and magnetic memory device
12/04/2008US20080298118 Asymmetrical SRAM cell with 4 double-gate transistors
12/04/2008US20080298117 Semiconductor integrated circuit device
12/04/2008US20080298116 Deglitching circuits for a radiation-hardened static random access memory based programmable architecture
12/04/2008US20080298115 Memory cell array with low resistance common source and high current drivability
12/04/2008US20080298114 Phase change memory structure with multiple resistance states and methods of programming an sensing same
12/04/2008US20080298113 Resistive memory architectures with multiple memory cells per access device
12/04/2008US20080297236 Semiconductor storage device and semiconductor integrated circuit
12/04/2008US20080297191 Apparatus and method of error detection and correction in a radiation-hardened static random access memory field-programmable gate array
12/04/2008DE19964494B4 Verfahren zur Herstellung ferroelektrischer Speichereinrichtungen Process for the preparation of ferroelectric memory devices
12/04/2008DE19533754B4 Isolierschicht-Vorrichtung (IG-Vorrichtung) mit einem Aufbau mit einer Source mit engem Bandabstand, und Verfahren zu deren Herstellung Insulating means (IG) device having a structure having a source with a narrow band gap, and processes for their preparation
12/04/2008DE102008023557A1 Integrierte-Schaltung-Speicherbauelement, das auf einen Wortleitungs-/Bitleitungskurzschluss anspricht Integrated-circuit memory device responsive to a word-line / Bitleitungskurzschluss
12/04/2008DE102007024955A1 Register mit prozess-, versorgungsspannungs- und temperaturschwankungsunabhängigem Laufzeitverzögerungspfad Register with process, on voltage and temperature fluctuation independent propagation delay path
12/04/2008DE102006061720B4 Speichervorrichtung zum Lesen/Schreiben von Daten Storage device for reading / writing data
12/04/2008DE102004013055B4 Halbleiterspeicherbaustein mit Datenleitungsabtastverstärker Semiconductor memory device having Datenleitungsabtastverstärker
12/04/2008CA2591004A1 Process of erasing magnetic data
12/03/2008EP1661143B1 Method and system for providing a programmable current source for a magnetic memory
12/03/2008EP1573743B1 Mram architecture with electrically isolated read write circuitry
12/03/2008CN101317329A State retention within a data processing system
12/03/2008CN101317232A Semiconductor integrated circuit having low power consumption with self-refresh
12/03/2008CN101317231A Method and apparatus for programming/erasing a non-volatile memory
12/03/2008CN101315970A Storage medium material
12/03/2008CN101315969A Resistor memory with doping control layer
12/03/2008CN101315942A Resistive random access memory device
12/03/2008CN101315906A Once programmable memory structure and manufacturing method thereof
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