Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
11/2008
11/19/2008CN101308901A Magnetoresistance effect element and magnetoresistive random access memory using the same
11/19/2008CN100435374C Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom
11/19/2008CN100435373C Semiconductor memory device and method of fabricating the same
11/19/2008CN100435340C Semiconductor memory device
11/19/2008CN100435240C Semiconductor device
11/19/2008CN100435239C Fuse circuit
11/19/2008CN100435238C System for controlling mode changes in a voltage down-converter
11/19/2008CN100435116C Non-volatile memory and method with memory planes alignment
11/19/2008CN100435115C Non-volatile memory and method with non-sequential update block management
11/18/2008US7454672 Semiconductor memory device testable with a single data rate and/or dual data rate pattern in a merged data input/output pin test mode
11/18/2008US7454663 Method and circuitry for debugging/updating ROM
11/18/2008US7454617 Apparatus for validating the presence of an authorized accessory
11/18/2008US7454555 Apparatus and method including a memory device having multiple sets of memory banks with duplicated data emulating a fast access time, fixed latency memory device
11/18/2008US7453754 Semiconductor memory device changing refresh interval depending on temperature
11/18/2008US7453752 Method for hiding a refresh in a pseudo-static memory with plural DRAM sub-arrays and an on-board address decoder
11/18/2008US7453747 Active compensation for operating point drift in MRAM write operation
11/18/2008US7453743 Static random access memory device having reduced leakage current during active mode and a method of operating thereof
11/18/2008US7453738 Semiconductor device
11/18/2008US7453737 Program method with optimized voltage level for flash memory
11/18/2008US7453736 Methods of erasing and designing electrically erasable charge trap nonvolatile memory cells having erase threshold voltage that is higher than an initial threshold voltage
11/18/2008US7453735 Non-volatile memory and control with improved partial page program capability
11/18/2008US7453733 Nonvolatile semiconductor memory device and a method of word lines thereof
11/18/2008US7453732 Method for programming memory cells including transconductance degradation detection
11/18/2008US7453730 Charge packet metering for coarse/fine programming of non-volatile memory
11/18/2008US7453729 Bit line setup and discharge circuit for programming non-volatile memory
11/18/2008US7453728 Data storage system with enhanced reliability with respect to data destruction caused by reading-out of the data
11/18/2008US7453726 Non-volatile memory cell with improved programming technique and density
11/18/2008US7453725 Apparatus for eliminating leakage current of a low Vt device in a column latch
11/18/2008US7453724 Flash memory device having improved program rate
11/18/2008US7453722 Phase change memory device and memory cell array thereof
11/18/2008US7453721 Magnetic memory
11/18/2008US7453720 Magnetic random access memory with stacked toggle memory cells having oppositely-directed easy-axis biasing
11/18/2008US7453719 Magnetic random access memory with improved data reading method
11/18/2008US7453718 Digital data apparatuses and digital data operational methods
11/18/2008US7453717 Three-state memory cell
11/18/2008US7453716 Semiconductor memory device with stacked control transistors
11/18/2008US7453715 Reading a phase change memory
11/18/2008US7453714 Over-driven access method and device for ferroelectric memory
11/18/2008US7453672 Spin valve magnetoresistive device with conductive-magnetic material bridges in a dielectric or semiconducting layer alternatively of magnetic material
11/18/2008US7453083 Negative differential resistance field effect transistor for implementing a pull up element in a memory cell
11/18/2008CA2458732C A keyboard
11/13/2008WO2008137999A1 Programmable magnetic read only memory (mrom)
11/13/2008WO2008137070A1 Tungsten digitlines and methods of forming and operating the same
11/13/2008WO2008136911A1 Expanded programming window for non-volatile multilevel memory cells
11/13/2008WO2008136907A1 Non-volatile multilevel memory cells with data read of reference cells
11/13/2008WO2008135694A1 Magnetic memory with magnetic tunnel junction
11/13/2008WO2008134858A1 Multi-level cell access buffer with dual function
11/13/2008WO2007109423A3 Non-volatile memory with controlled program/erase
11/13/2008US20080282076 Information processing device
11/13/2008US20080279028 Flash/dynamic random access memory field programmable gate array
11/13/2008US20080279027 Thermally Stable Reference Voltage Generator for Mram
11/13/2008US20080279025 Electronic Circuit with Memory for Which a Threshold Level is Selected
11/13/2008US20080279022 Semiconductor device with self refresh test mode
11/13/2008US20080279014 Multi-phase wordline erasing for flash memory
11/13/2008US20080279010 Flash memory device and program method thereof
11/13/2008US20080279008 Non-volatile storage with boosting using channel isolation switching
11/13/2008US20080279007 Boosting for non-volatile storage using channel isolation switching
11/13/2008US20080279005 Managing flash memory program and erase cycles in the time domain
11/13/2008US20080278998 Data Storage Device and Method
11/13/2008US20080278997 Semiconductor memory device and write control method thereof
11/13/2008US20080278996 Programmable magnetic read only memory (mrom)
11/13/2008US20080278995 Magnetic memory and memory cell thereof and method of manufacturing the memory cell
11/13/2008US20080278994 MRAM Cell with Multiple Storage Elements
11/13/2008US20080278993 Static random acess memory device
11/13/2008US20080278992 Independent-gate controlled asymmetrical memory cell and memory using the cell
11/13/2008US20080278991 Semiconductor memory device
11/13/2008US20080278990 Resistive-switching nonvolatile memory elements
11/13/2008US20080278989 Resistive memory device and method of manufacturing the same
11/13/2008US20080278988 Resistive switching element
11/13/2008US20080277739 Finfet Transistors
11/13/2008US20080277703 Magnetoresistive random access memory and method of manufacturing the same
11/13/2008DE102008021409A1 Verwendung von mehreren spannungsgesteuerten Verzögerungsleitungen für die präzise Ausrichtung und Arbeitszyklussteuerung der Datenausgabe einer DDR-Speichereinrichtung Using a plurality of voltage-controlled delay lines for the precise alignment and duty cycle control of the data output of a DDR memory device
11/13/2008DE102008021391A1 System und Verfahren zum Überwachen von Temperatur in einem Mehrfachhalbleiterstück-Gehäuse System and method for monitoring temperature in a multi-semiconductor-piece housing
11/12/2008EP1990836A1 Method manufacturing of semiconductor device, and semiconductor memory device
11/12/2008EP1990805A1 Ram macro and timing generating circuit for same
11/12/2008EP1990804A1 Memory device, memory controller and memory system
11/12/2008EP1949542A4 Bit line pre-settlement circuit and method for flash memory sensing scheme
11/12/2008EP1661140B1 Mram array with segmented magnetic write lines
11/12/2008EP1429341B1 Magnetic memory device and its recording control method
11/12/2008CN101304039A Advanced mram design
11/12/2008CN101304038A Magnetic memory and memory cell thereof and method of manufacturing the memory cell
11/12/2008CN101303891A Memory system, program method thereof, and computing system including the same
11/12/2008CN101303888A Sram with switchable power supply sets of voltages
11/12/2008CN101303887A Perfect alignment and duty ratio control of data output of memory device
11/12/2008CN100433333C Fin field effect transistor memory cell, fin field effect transistor memory cell arrangement, and method for the production of a fin field effect transistor memory cell
11/12/2008CN100433332C Memory gain cells and method for producing the same
11/12/2008CN100433193C Charge injection
11/12/2008CN100433192C System and method for using dynamic random access memory and flash memory
11/12/2008CN100433191C Low voltage operation of static random access memory
11/12/2008CN100433190C Semiconductor memory device capable of controlling potential level of power supply line and/or ground line
11/12/2008CN100433189C Data exchange circuit and method for synchronous DRAM
11/12/2008CN100433188C Multiple word-line accessing and accessor
11/12/2008CN100433187C Memory cells using gated diodes and methods of use thereof
11/12/2008CN100433186C Semiconductor memory device
11/12/2008CN100433185C Self refresh oscillator
11/12/2008CN100433184C Bank based self refresh control apparatus in semiconductor memory device and its method
11/12/2008CN100433183C Ferroelectric memory and operating method therefor
11/12/2008CN100433182C Magneto-resistive element
11/12/2008CN100433181C Magnetic memory device and method of writing the same
11/12/2008CN100433178C Memory circuit element application apparatus
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