Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008) |
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08/05/2008 | US7408803 Method for writing to magnetoresistive memory cells and magnetoresistive memory which can be written to by the method |
08/05/2008 | US7408802 Nano-contacted magnetic memory device |
08/05/2008 | US7408801 Nonvolatile semiconductor memory device |
08/05/2008 | US7408800 Apparatus and method for improved SRAM device performance through double gate topology |
08/05/2008 | US7408799 RFID device having nonvolatile ferroelectric memory device |
08/05/2008 | US7408269 Multi-level power supply system for a complementary metal oxide semiconductor circuit |
08/05/2008 | US7408231 SRAM memory semiconductor integrated circuit device |
08/05/2008 | US7407857 Method of making a scalable flash EEPROM memory cell with notched floating gate and graded source region |
08/05/2008 | US7407856 Method of manufacturing a memory device |
08/05/2008 | US7407829 Electrically programmable memory element with improved contacts |
08/05/2008 | US7407819 Polymer memory having a ferroelectric polymer memory material with cell sizes that are asymmetric |
08/05/2008 | US7407261 Image processing apparatus for a printing mechanism of a wide format pagewidth inkjet printer |
07/31/2008 | WO2008092004A2 Depletion-mode mosfet circuits and applications |
07/31/2008 | WO2008091443A1 Memory system and method having volatile and non-volatile memory devices at same hierarchical level |
07/31/2008 | WO2008090696A1 Magnetoresistive element and magnetic storage device |
07/31/2008 | WO2008090305A1 Magnetic structure with multiple-bit storage capabilities |
07/31/2008 | WO2008075351A3 Soft decoding of hard and soft bits read from a flash memory |
07/31/2008 | WO2008063970A3 Operation nand non-volatile memory with boost electrodes |
07/31/2008 | WO2008060762A3 Magnetic tunnel junction structure and method |
07/31/2008 | WO2007134319A3 Multi-chip package for a flash memory |
07/31/2008 | US20080184096 Repair Techniques for Memory with Multiple Redundancy |
07/31/2008 | US20080181041 Semiconductor memory device and refresh control method |
07/31/2008 | US20080181040 N-port memory circuits allowing M memory addresses to be accessed concurrently and signal processing methods thereof |
07/31/2008 | US20080181031 Data strobe synchronization circuit and method for double data rate, multi-bit writes |
07/31/2008 | US20080181029 Techniques For Improving Write Stability Of Memory With Decoupled Read And Write Bit Lines |
07/31/2008 | US20080181014 Programming a non-volatile memory device |
07/31/2008 | US20080181008 Flash memory system capable of improving access performance and access method thereof |
07/31/2008 | US20080181005 Semiconductor storage device having page copying function |
07/31/2008 | US20080180998 Method of reading nand memory to compensate for coupling between storage elements |
07/31/2008 | US20080180995 Semiconductor Device With Electrically Floating Body |
07/31/2008 | US20080180994 Memory system, semiconductor memory device and method of driving same |
07/31/2008 | US20080180993 Intergrated Circuit with Magnetic Memory |
07/31/2008 | US20080180992 Storage element and memory |
07/31/2008 | US20080180991 Current-Confined Effect of Magnetic Nano-Current-Channel (NCC) for Magnetic Random Access Memory (MRAM) |
07/31/2008 | US20080180990 Method to tighten set distribution for pcram |
07/31/2008 | US20080180989 Memory devices including multi-bit memory cells having magnetic and resistive memory elements and related methods |
07/31/2008 | US20080180988 Direct writing method of magnetic memory cell and magetic memory cell structure |
07/31/2008 | US20080180987 Multi-State Latches From n-State Reversible Inverters |
07/31/2008 | US20080180986 Semiconductor device and method for manufacturing the same |
07/31/2008 | US20080180985 Ferroelectric media structure for ferroelectric hard disc drive and method of fabricating the same |
07/31/2008 | US20080180984 Semiconductor memory device |
07/31/2008 | US20080180982 Stacked 1T-nmemory cell structure |
07/31/2008 | US20080180981 Resistance semiconductor memory device having three-dimensional stack and word line decoding method thereof |
07/31/2008 | US20080180862 Method of production of a magnetoresistance effect device |
07/31/2008 | US20080179591 Phase Change Memory Cell Design with Adjusted Seam Location |
07/31/2008 | DE4326133B4 Schneller Strom-Leseverstärker Faster current sense amplifier |
07/31/2008 | DE102007062930A1 Speichervorrichtung mit mehreren Konfigurationen Storage device with multiple configurations |
07/31/2008 | DE102007058323A1 Speicher mit ersten und zweiten Empfängern Memory having first and second receivers |
07/31/2008 | DE102007002150A1 Konzept zur Reduktion von Leckströmen von integrierten Schaltungen mit wenigstens einem Transistor Concept for reducing leakage currents of integrated circuits with at least one transistor |
07/31/2008 | DE102005008392B4 FeRAM-Speicherzelle, FeRAM-Speicherschaltung und Verfahren zum Speichern eines Datumwertes in einer FeRAM-Speicherzelle FeRAM memory cell, FeRAM memory circuit and method for storing a date value in a FeRAM memory cell |
07/30/2008 | EP1949542A2 Bit line pre-settlement circuit and method for flash memory sensing scheme |
07/30/2008 | EP1949466A1 A magnetoresistive tunnel junction magnetic device and its application to mram |
07/30/2008 | EP1949382A2 Tuned pinned layers for magnetic tunnel junctions with multicomponent free layers |
07/30/2008 | CN101233578A Semiconductor memory |
07/30/2008 | CN101233577A System and method for programming cells in non-volatile integrated memory devices |
07/30/2008 | CN101233576A Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same |
07/30/2008 | CN101233575A Memory control method and memory system |
07/30/2008 | CN101232076A Method for eliminating CuxO resistance memory formation voltage |
07/30/2008 | CN101232075A Pillar phase change memory cell |
07/30/2008 | CN101232074A Semiconductor storage device and its making method |
07/30/2008 | CN101232073A Magnetoresistive element and magnetic memory |
07/30/2008 | CN101232038A Structure of high-density phase transition memory and process of preparation thereof |
07/30/2008 | CN101232037A Method for interconnecting multilayer phase transition memory array and lower layer peripheral circuit |
07/30/2008 | CN101232036A Phase change memory and manufacturing method thereofs |
07/30/2008 | CN101231884A Current compliant sensing architecture for multilevel phase change memory |
07/30/2008 | CN101231883A Method and apparatus for high-efficiency operation of a dynamic random access memory |
07/30/2008 | CN101231882A Semiconductor integrated circuit and method of operating the same |
07/30/2008 | CN101231881A Shared global word line magnetic random access memory |
07/30/2008 | CN100407577C 有源端接电路以及控制外部集成电路端子的阻抗的方法 The active termination circuit and method for controlling the impedance of the external terminals of the integrated circuit |
07/30/2008 | CN100407471C 集成电路装置及神经元 The integrated circuit device and neuronal |
07/30/2008 | CN100407470C 磁开关元件和磁存储器 A magnetic switching element and the magnetic memory |
07/30/2008 | CN100407427C Nrom存储器元件,存储器阵列,相关装置和方法 Nrom memory elements of the memory array, the relevant apparatus and method |
07/30/2008 | CN100407421C 层叠型半导体存储装置 The layered semiconductor memory device |
07/30/2008 | CN100407337C 管理闪存中的不良存储块的装置和方法 Management apparatus and method for flash memory of the bad memory block |
07/30/2008 | CN100407333C 非直角磁性随机存取存储器装置 Non-rectangular magnetic random access memory device |
07/30/2008 | CN100407332C 半导体存储装置的选择装置 The semiconductor memory device selection means |
07/30/2008 | CN100407181C 用于存储设备的预测定时校准 Prediction is used for storing timing alignment device |
07/30/2008 | CN100407109C 数据转换电路和半导体装置 Data conversion circuit and a semiconductor device |
07/30/2008 | CN100407018C 薄膜晶体管阵列面板 The thin film transistor array panel |
07/29/2008 | US7406021 Electroluminescent multilayer optical information storage medium with integrated readout and composition of matter for use therein |
07/29/2008 | US7405979 Nonvolatile memory system, semiconductor memory, and writing method |
07/29/2008 | US7405977 Flash memory device with improved read speed |
07/29/2008 | US7405973 Repair circuit of semiconductor memory device |
07/29/2008 | US7405972 Non-volatile memory array |
07/29/2008 | US7405971 Semiconductor device |
07/29/2008 | US7405970 Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell |
07/29/2008 | US7405969 Non-volatile memory cell and non-volatile memory devices |
07/29/2008 | US7405967 Microelectronic programmable device and methods of forming and programming the same |
07/29/2008 | US7405966 Magnetic tunneling junction antifuse device |
07/29/2008 | US7405965 Phase change memory device |
07/29/2008 | US7405964 Integrated circuit to identify read disturb condition in memory cell |
07/29/2008 | US7405963 Dynamic data restore in thyristor-based memory device |
07/29/2008 | US7405962 Magnetic random access memory |
07/29/2008 | US7405961 Magnetic storage device |
07/29/2008 | US7405960 Semiconductor memory device and method for biasing dummy line therefor |
07/29/2008 | US7405959 Ferroelectric memory device |
07/29/2008 | US7405958 Magnetic memory device having XP cell and Str cell in one chip |
07/29/2008 | US7405418 Memory device electrode with a surface structure |
07/29/2008 | US7404633 Inkjet cartridge with ink reservoir core and releasable housing |
07/29/2008 | US7404625 Ink jet nozzle arrangement having paddle forming a portion of a wall |