Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
08/2008
08/05/2008US7408803 Method for writing to magnetoresistive memory cells and magnetoresistive memory which can be written to by the method
08/05/2008US7408802 Nano-contacted magnetic memory device
08/05/2008US7408801 Nonvolatile semiconductor memory device
08/05/2008US7408800 Apparatus and method for improved SRAM device performance through double gate topology
08/05/2008US7408799 RFID device having nonvolatile ferroelectric memory device
08/05/2008US7408269 Multi-level power supply system for a complementary metal oxide semiconductor circuit
08/05/2008US7408231 SRAM memory semiconductor integrated circuit device
08/05/2008US7407857 Method of making a scalable flash EEPROM memory cell with notched floating gate and graded source region
08/05/2008US7407856 Method of manufacturing a memory device
08/05/2008US7407829 Electrically programmable memory element with improved contacts
08/05/2008US7407819 Polymer memory having a ferroelectric polymer memory material with cell sizes that are asymmetric
08/05/2008US7407261 Image processing apparatus for a printing mechanism of a wide format pagewidth inkjet printer
07/2008
07/31/2008WO2008092004A2 Depletion-mode mosfet circuits and applications
07/31/2008WO2008091443A1 Memory system and method having volatile and non-volatile memory devices at same hierarchical level
07/31/2008WO2008090696A1 Magnetoresistive element and magnetic storage device
07/31/2008WO2008090305A1 Magnetic structure with multiple-bit storage capabilities
07/31/2008WO2008075351A3 Soft decoding of hard and soft bits read from a flash memory
07/31/2008WO2008063970A3 Operation nand non-volatile memory with boost electrodes
07/31/2008WO2008060762A3 Magnetic tunnel junction structure and method
07/31/2008WO2007134319A3 Multi-chip package for a flash memory
07/31/2008US20080184096 Repair Techniques for Memory with Multiple Redundancy
07/31/2008US20080181041 Semiconductor memory device and refresh control method
07/31/2008US20080181040 N-port memory circuits allowing M memory addresses to be accessed concurrently and signal processing methods thereof
07/31/2008US20080181031 Data strobe synchronization circuit and method for double data rate, multi-bit writes
07/31/2008US20080181029 Techniques For Improving Write Stability Of Memory With Decoupled Read And Write Bit Lines
07/31/2008US20080181014 Programming a non-volatile memory device
07/31/2008US20080181008 Flash memory system capable of improving access performance and access method thereof
07/31/2008US20080181005 Semiconductor storage device having page copying function
07/31/2008US20080180998 Method of reading nand memory to compensate for coupling between storage elements
07/31/2008US20080180995 Semiconductor Device With Electrically Floating Body
07/31/2008US20080180994 Memory system, semiconductor memory device and method of driving same
07/31/2008US20080180993 Intergrated Circuit with Magnetic Memory
07/31/2008US20080180992 Storage element and memory
07/31/2008US20080180991 Current-Confined Effect of Magnetic Nano-Current-Channel (NCC) for Magnetic Random Access Memory (MRAM)
07/31/2008US20080180990 Method to tighten set distribution for pcram
07/31/2008US20080180989 Memory devices including multi-bit memory cells having magnetic and resistive memory elements and related methods
07/31/2008US20080180988 Direct writing method of magnetic memory cell and magetic memory cell structure
07/31/2008US20080180987 Multi-State Latches From n-State Reversible Inverters
07/31/2008US20080180986 Semiconductor device and method for manufacturing the same
07/31/2008US20080180985 Ferroelectric media structure for ferroelectric hard disc drive and method of fabricating the same
07/31/2008US20080180984 Semiconductor memory device
07/31/2008US20080180982 Stacked 1T-nmemory cell structure
07/31/2008US20080180981 Resistance semiconductor memory device having three-dimensional stack and word line decoding method thereof
07/31/2008US20080180862 Method of production of a magnetoresistance effect device
07/31/2008US20080179591 Phase Change Memory Cell Design with Adjusted Seam Location
07/31/2008DE4326133B4 Schneller Strom-Leseverstärker Faster current sense amplifier
07/31/2008DE102007062930A1 Speichervorrichtung mit mehreren Konfigurationen Storage device with multiple configurations
07/31/2008DE102007058323A1 Speicher mit ersten und zweiten Empfängern Memory having first and second receivers
07/31/2008DE102007002150A1 Konzept zur Reduktion von Leckströmen von integrierten Schaltungen mit wenigstens einem Transistor Concept for reducing leakage currents of integrated circuits with at least one transistor
07/31/2008DE102005008392B4 FeRAM-Speicherzelle, FeRAM-Speicherschaltung und Verfahren zum Speichern eines Datumwertes in einer FeRAM-Speicherzelle FeRAM memory cell, FeRAM memory circuit and method for storing a date value in a FeRAM memory cell
07/30/2008EP1949542A2 Bit line pre-settlement circuit and method for flash memory sensing scheme
07/30/2008EP1949466A1 A magnetoresistive tunnel junction magnetic device and its application to mram
07/30/2008EP1949382A2 Tuned pinned layers for magnetic tunnel junctions with multicomponent free layers
07/30/2008CN101233578A Semiconductor memory
07/30/2008CN101233577A System and method for programming cells in non-volatile integrated memory devices
07/30/2008CN101233576A Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same
07/30/2008CN101233575A Memory control method and memory system
07/30/2008CN101232076A Method for eliminating CuxO resistance memory formation voltage
07/30/2008CN101232075A Pillar phase change memory cell
07/30/2008CN101232074A Semiconductor storage device and its making method
07/30/2008CN101232073A Magnetoresistive element and magnetic memory
07/30/2008CN101232038A Structure of high-density phase transition memory and process of preparation thereof
07/30/2008CN101232037A Method for interconnecting multilayer phase transition memory array and lower layer peripheral circuit
07/30/2008CN101232036A Phase change memory and manufacturing method thereofs
07/30/2008CN101231884A Current compliant sensing architecture for multilevel phase change memory
07/30/2008CN101231883A Method and apparatus for high-efficiency operation of a dynamic random access memory
07/30/2008CN101231882A Semiconductor integrated circuit and method of operating the same
07/30/2008CN101231881A Shared global word line magnetic random access memory
07/30/2008CN100407577C 有源端接电路以及控制外部集成电路端子的阻抗的方法 The active termination circuit and method for controlling the impedance of the external terminals of the integrated circuit
07/30/2008CN100407471C 集成电路装置及神经元 The integrated circuit device and neuronal
07/30/2008CN100407470C 磁开关元件和磁存储器 A magnetic switching element and the magnetic memory
07/30/2008CN100407427C Nrom存储器元件,存储器阵列,相关装置和方法 Nrom memory elements of the memory array, the relevant apparatus and method
07/30/2008CN100407421C 层叠型半导体存储装置 The layered semiconductor memory device
07/30/2008CN100407337C 管理闪存中的不良存储块的装置和方法 Management apparatus and method for flash memory of the bad memory block
07/30/2008CN100407333C 非直角磁性随机存取存储器装置 Non-rectangular magnetic random access memory device
07/30/2008CN100407332C 半导体存储装置的选择装置 The semiconductor memory device selection means
07/30/2008CN100407181C 用于存储设备的预测定时校准 Prediction is used for storing timing alignment device
07/30/2008CN100407109C 数据转换电路和半导体装置 Data conversion circuit and a semiconductor device
07/30/2008CN100407018C 薄膜晶体管阵列面板 The thin film transistor array panel
07/29/2008US7406021 Electroluminescent multilayer optical information storage medium with integrated readout and composition of matter for use therein
07/29/2008US7405979 Nonvolatile memory system, semiconductor memory, and writing method
07/29/2008US7405977 Flash memory device with improved read speed
07/29/2008US7405973 Repair circuit of semiconductor memory device
07/29/2008US7405972 Non-volatile memory array
07/29/2008US7405971 Semiconductor device
07/29/2008US7405970 Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell
07/29/2008US7405969 Non-volatile memory cell and non-volatile memory devices
07/29/2008US7405967 Microelectronic programmable device and methods of forming and programming the same
07/29/2008US7405966 Magnetic tunneling junction antifuse device
07/29/2008US7405965 Phase change memory device
07/29/2008US7405964 Integrated circuit to identify read disturb condition in memory cell
07/29/2008US7405963 Dynamic data restore in thyristor-based memory device
07/29/2008US7405962 Magnetic random access memory
07/29/2008US7405961 Magnetic storage device
07/29/2008US7405960 Semiconductor memory device and method for biasing dummy line therefor
07/29/2008US7405959 Ferroelectric memory device
07/29/2008US7405958 Magnetic memory device having XP cell and Str cell in one chip
07/29/2008US7405418 Memory device electrode with a surface structure
07/29/2008US7404633 Inkjet cartridge with ink reservoir core and releasable housing
07/29/2008US7404625 Ink jet nozzle arrangement having paddle forming a portion of a wall