Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
08/2008
08/21/2008US20080198647 Method and apparatus for bitline and contact via integration in magnetic random access memory arrays
08/21/2008US20080198646 Nonvolatile memory device using resistance material
08/21/2008US20080198645 Nonvolatile memory device having memory and reference cells
08/21/2008US20080198644 Data Storage Device
08/21/2008US20080198640 Data Storage Device
08/21/2008US20080197434 Magnetic memory device
08/21/2008DE10323052B4 Ferroelektrisches Speicherbauelement A ferroelectric memory device
08/21/2008DE10260996B4 Speichersteuerchip,-steuerverfahren und -steuerschaltung Memory controller chip control method, and control circuit
08/21/2008DE102007007566A1 Halbleiter-Bauelement-Chip, sowie Halbleiter-Bauelement-System mit mehreren, gestapelten Halbleiter-Bauelement-Chips, und Verfahren zum Betreiben eines Halbleiter-Bauelement-Systems The semiconductor device chip, and the semiconductor device system comprising a plurality of stacked semiconductor device chip, and method of operating a semiconductor device system
08/21/2008DE102007007565A1 Halbleiter-Speicherbauelement mit umschaltbarem Substratpotential, und Verfahren zum Betrieb eines Halbleiter-Speicherbauelements A semiconductor memory device with switchable substrate potential, and method of operating a semiconductor memory device
08/20/2008EP1959453A1 Semiconductor memory device and electronic apparatus
08/20/2008EP1959452A1 Switchable SRAM power supply voltage sets with programmable standby voltage levels
08/20/2008EP1639653B1 Self-aligned conductive lines for fet-based magnetic random access memory devices and method of forming the same
08/20/2008EP1614126B1 Low switching field magnetic element
08/20/2008EP1595262A4 Composite tension rod terminal systems
08/20/2008EP1573744B1 Current re-routing scheme for serial-programmed mram
08/20/2008CN101246950A Memory element with reduced-current phase change element
08/20/2008CN101246949A Non-volatile memory and its production method
08/20/2008CN101246888A Integrated circuit, dual port sram cell and semiconductor structure
08/20/2008CN101246740A Ultra-low power consumption nonvolatile static random access memory cell and operation method thereof
08/20/2008CN101246734A Bias voltage generator and method generating bias voltage for semiconductor memory device
08/20/2008CN101246418A Heat insulation FIFO circuit based on CTGAL
08/20/2008CN100413075C Memory device
08/20/2008CN100412991C EEPROM level transforming circuit and method employing deep sub-micron CMOS standard process to realize
08/20/2008CN100412990C Nonvolatile semiconductor memory device
08/20/2008CN100412987C Semiconductor storage device with offset-compensation read-out system
08/20/2008CN100412986C Strong media memory and operation method thereof
08/20/2008CN100412985C Semiconductor memory device
08/20/2008CN100412984C Magnetic random access storage device
08/20/2008CN100412757C Backup Memory control unit for reducing current consumption
08/19/2008US7415590 Integrated circuit having a memory cell array capable of simultaneously performing a data read operation and a data write operation
08/19/2008US7415581 Semiconductor memory chip
08/19/2008US7415404 Method and apparatus for generating a sequence of clock signals
08/19/2008US7414914 Semiconductor memory device
08/19/2008US7414908 Magnetic memory device
08/19/2008US7414907 Semiconductor memory device
08/19/2008US7414895 NAND flash memory cell programming
08/19/2008US7414894 Methods for identifying non-volatile memory elements with poor subthreshold slope or weak transconductance
08/19/2008US7414893 EEPROM memory architecture
08/19/2008US7414892 Nonvolatile semiconductor memory device which stores multivalue data
08/19/2008US7414889 Structure and method of sub-gate and architectures employing bandgap engineered SONOS devices
08/19/2008US7414888 Program method and circuit of non-volatile memory
08/19/2008US7414887 Variable current sinking for coarse/fine programming of non-volatile memory
08/19/2008US7414885 Method and apparatus for reading data from a ferromagnetic memory cell
08/19/2008US7414883 Programming a normally single phase chalcogenide material for use as a memory or FPLA
08/19/2008US7414882 Magnetic memory devices having rotationally offset magnetic storage elements therein
08/19/2008US7414881 Magnetization direction control method and application thereof to MRAM
08/19/2008US7414880 Magnetoresistive effect element and magnetic memory
08/19/2008US7414879 Semiconductor memory device
08/19/2008US7414878 Method for implementing domino SRAM leakage current reduction
08/19/2008US7414877 Electronic device including a static-random-access memory cell and a process of forming the electronic device
08/19/2008US7414876 Nonvolatile ferroelectric memory device having power control function
08/19/2008US7414875 Apparatus and methods for a physical layout of simultaneously sub-accessible memory modules
08/19/2008US7414871 Program control circuit of flash memory device having MLC and method thereof
08/19/2008US7414295 Transistor and method of operating transistor
08/14/2008WO2008081426B1 Avoiding errors in a flash memory by using substitution transformations
08/14/2008WO2008019347A3 Solid state storage element and method
08/14/2008WO2007134277A3 Maintenance operations for multi-level data storage cells
08/14/2008US20080195815 Memory card using nand flash memory and its operating method
08/14/2008US20080194045 Ferroelectric register, and method for manufacturing capacitor of the same
08/14/2008US20080192546 Flash EEprom System With Simultaneous Multiple Data Sector Programming and Storage of Physical Block Characteristics in Other Designated Blocks
08/14/2008US20080192542 Memory System and Data Reading Method Thereof
08/14/2008US20080192539 Memory System Including MLC Flash Memory
08/14/2008US20080192535 Sense amplifiers and semiconductor devices including the same
08/14/2008US20080192534 Memory element with reduced-current phase change element
08/14/2008US20080192533 Method of addressing digital data
08/14/2008US20080192532 Hybrid circuit having nanotube memory cells
08/14/2008US20080192531 Method of writing into semiconductor memory device
08/14/2008US20080192530 Resistive memory element sensing using averaging
08/14/2008US20080192529 Integrated circuit having a resistive memory
08/14/2008US20080192528 Piezoelectric reading of ferroelectric data storage media
08/14/2008US20080192527 Semiconductor memory device and control method thereof
08/14/2008US20080191251 Non-Volatile Magnetic Memory with Low Switching Current and High Thermal Stability
08/14/2008DE10344818B4 Vorrichtung zum Kalibrieren der relativen Phase zweier Empfangssignale eines Speicherbausteins Apparatus for calibrating the relative phase of two received signals of a memory module
08/14/2008DE10235739B4 Register, das auf einem Speichermodul montiert ist sowie Verwendung eines Registers in einem Speichermodul Register, which is mounted on a memory module as well as using a register in a memory module
08/14/2008DE102008006525A1 Schaltungslayout für unterschiedliche Leistungsanforderungen und entsprechendes Verfahren Circuit layout for different performance requirements and corresponding method
08/14/2008DE10066334B4 Halbleitereinrichtung und Verfahren zur Herstellung der Halbleitereinrichtung A semiconductor device and method of manufacturing the semiconductor device
08/13/2008EP1956713A1 Apparatus and method of error detection and correction in a radiation-hardened static random access memory field-programmable gate array
08/13/2008EP1955333A1 Semiconductor integrated circuit having low power consumption with self-refresh
08/13/2008EP1875516A4 A hybrid bulk-soi 6t-sram cell for improved cell stability and performance
08/13/2008EP1658614B1 Magnetic memory element utilizing spin transfer switching and storing multiple bits
08/13/2008CN101243518A SRAM cell with separate read-write circuitry
08/13/2008CN101242179A Electronic system, semiconductor integrated circuit and terminal device
08/13/2008CN101241967A Adhesive layer material for phase change memory and its making method
08/13/2008CN101241966A Resistor random access memory cell device
08/13/2008CN101241926A Programmable phase change material structure and its forming method
08/13/2008CN101241925A Phase change memory device and its making method
08/13/2008CN101241757A Memory cell device and programming methods
08/13/2008CN101241756A Memory cell with separate read and program paths
08/13/2008CN101241755A Semiconductor device using magnetic domain wall moving and method for manufacturing the same
08/13/2008CN101241754A Magnetic domain information storage device and method of manufacturing the same
08/13/2008CN101241750A Memory system and data transmission method
08/13/2008CN101241669A Display driver IC having embedded DRAM
08/13/2008CN101241667A Display driver IC having embedded DRAM
08/13/2008CN100411149C Method and apparatus for operating a string of charge trapping memory cells
08/13/2008CN100411059C Method and system for manufacturing DRAMs with reduced self-refresh current requirements
08/13/2008CN100411058C Mram configuration having selection transistors with a large channel width
08/13/2008CN100410980C Display controller with display memory circuit
08/13/2008CN100410905C Data output circuit used for synchronous integrated circuit storage device
08/12/2008US7412616 Semiconductor integrated circuit
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