Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
11/2008
11/11/2008USRE40567 Flash memory device of capable of sensing a threshold voltage of memory cells on a page mode of operation
11/11/2008US7451363 Semiconductor integrated circuit including memory macro
11/11/2008US7451053 On die thermal sensor of semiconductor memory device and method thereof
11/11/2008US7450464 Circuit and method for detecting synchronous mode in a semiconductor memory apparatus
11/11/2008US7450463 Address buffer and method for buffering address in semiconductor memory apparatus
11/11/2008US7450459 Multi-port memory device
11/11/2008US7450458 Dynamic random access memories and method for testing performance of the same
11/11/2008US7450455 Semiconductor memory device and driving method thereof
11/11/2008US7450452 Method to identify or screen VMIN drift on memory cells during burn-in or operation
11/11/2008US7450450 Circuitry for a programmable element
11/11/2008US7450444 High speed DRAM architecture with uniform access latency
11/11/2008US7450438 Crossbar apparatus for a forwarding table memory in a router
11/11/2008US7450435 Systems for comprehensive erase verification in non-volatile memory
11/11/2008US7450434 Semiconductor device and its control method
11/11/2008US7450433 Word line compensation in non-volatile memory erase operations
11/11/2008US7450428 Reading circuit and method for a nonvolatile memory device
11/11/2008US7450426 Systems utilizing variable program voltage increment values in non-volatile memory program operations
11/11/2008US7450425 Non-volatile memory cell read failure reduction
11/11/2008US7450424 Method for reading a memory array with a non-volatile memory structure
11/11/2008US7450423 Methods of operating non-volatile memory cells having an oxide/nitride multilayer insulating structure
11/11/2008US7450418 Non-volatile memory and operating method thereof
11/11/2008US7450417 Nonvolatile semiconductor memory device
11/11/2008US7450416 Utilization of memory-diode which may have each of a plurality of different memory states
11/11/2008US7450415 Phase-change memory device
11/11/2008US7450414 Method for using a mixed-use memory array
11/11/2008US7450413 Configurable SRAM system and method
11/11/2008US7450412 Logical operation circuit and logical operation method
11/11/2008US7450411 Phase change memory device and manufacturing method
11/11/2008US7450410 High speed data bus
11/11/2008US7450348 Electronic device, magnetoresistance effect element; magnetic head, recording/reproducing apparatus, memory element and manufacturing method for electronic device
11/11/2008US7449760 Magnetoresistive element, magnetic memory cell, and magnetic memory device
11/11/2008US7449747 Semiconductor memory device
11/11/2008US7449390 Methods of forming memory
11/11/2008US7449345 Capping structure for enhancing dR/R of the MTJ device
11/11/2008US7448728 Nozzle assembly having a sprung electromagnetically operated plunger
11/06/2008WO2008134691A1 Junction-fet-based dram-type storage cell, method of operation, and method of manufacture
11/06/2008WO2008134688A1 Content addressable memory cell including a junction field effect transistor
11/06/2008WO2008134253A1 Reducing power consumption during read operations in non-volatile storage
11/06/2008WO2008134075A1 Magnetic floating gate flash memory structures
11/06/2008WO2008132971A1 Semiconductor memory
11/06/2008WO2008112746A3 Apparatus and method for integrating nonvolatile memory capability within sram devices
11/06/2008WO2008100869A3 Non-volatile magnetic memory with low switching current and high thermal stablity
11/06/2008WO2007137055A3 High density magnetic memory cell layout for spin transfer torque magnetic memories utilizing donut shaped transistors
11/06/2008WO2007055727A3 Tuned pinned layers for magnetic tunnel junctions with multicomponent free layers
11/06/2008WO2004088620A3 Displays with all-metal electronics
11/06/2008US20080276205 Computer program product for designing memory circuits having single-ended memory cells with improved read stability
11/06/2008US20080276112 Semiconductor integrated circuit
11/06/2008US20080273413 Semiconductor device
11/06/2008US20080273404 Semiconductor integrated circuit device
11/06/2008US20080273398 Semiconductor device storage cell structure, method of operation, and method of manufacture
11/06/2008US20080273397 Switched bitline VTH sensing for non-volatile memories
11/06/2008US20080273395 Expanded programming window for non-volatile multilevel memory cells
11/06/2008US20080273394 Symmetric differential current sense amplifier
11/06/2008US20080273391 Regulator Bypass Start-Up in an Integrated Circuit Device
11/06/2008US20080273390 NAND flash memory cell array and method of fabricating the same
11/06/2008US20080273388 Adjusting resistance of non-volatile memory using dummy memory cells
11/06/2008US20080273385 NAND step up voltage switching method
11/06/2008US20080273384 Non-volatile multilevel memory cells with data read of reference cells
11/06/2008US20080273382 Pseudo 6T SRAM Cell
11/06/2008US20080273381 Method for Switching Random Access Memory Elements and Magnetic Element Structures
11/06/2008US20080273380 Method and system for providing field biased magnetic memory devices
11/06/2008US20080273379 Programming a normally single phase chalcogenide material for use as a memory of FPLA
11/06/2008US20080273378 Multi-level resistive memory cell using different crystallization speeds
11/06/2008US20080273377 Methods of writing data to magnetic random access memory devices with bit line and/or digit line magnetic layers
11/06/2008US20080273376 Intrusion Resistant Apparatus and Method
11/06/2008US20080273375 Integrated circuit having a magnetic device
11/06/2008US20080273374 Methods of operating and designing memory circuits having single-ended memory cells with improved read stability
11/06/2008US20080273373 Apparatus for improved sram device performance through double gate topology
11/06/2008US20080273372 Method of Programming Multi-Layer Chalcogenide Devices
11/06/2008US20080273371 Memory including write circuit for providing multiple reset pulses
11/06/2008US20080273370 Integrated Circuit, Method of Operating an Integrated Circuit, Memory Cell Array, and Memory Module
11/06/2008US20080273369 Integrated Circuit, Memory Module, Method of Operating an Integrated Circuit, and Computing System
11/06/2008US20080273368 Method and apparatus for reading data from a ferromagnetic memory cell
11/06/2008US20080273367 Multi-stack ferroelectric polymer memory device and method for manufacturing same
11/06/2008US20080273058 Ink Ejection Nozzle Arrangement for an Inkjet Printer
11/06/2008US20080272807 Thin film logic device and system
11/06/2008US20080272448 Integrated circuit having a magnetic tunnel junction device
11/06/2008US20080271778 Use of electromagnetic excitation or light-matter interactions to generate or exchange thermal, kinetic, electronic or photonic energy
11/06/2008DE19943174B4 SDRAM-Adreßübersetzer SDRAM address translator
11/06/2008DE102004008218B4 Wiedergewinnen von in einem integrierten Magnetspeicher gespeicherten Daten Retrieving data stored in an integrated magnetic memory data
11/05/2008EP1988555A1 Nanomagnet array and method of forming the same
11/05/2008EP1987581A2 Current driven memory cells having enhanced current and enhanced current symmetry
11/05/2008EP1987520A2 Multi-bit memory cell having electrically floating body transistor, and method of programming and reading same
11/05/2008EP1987519A2 Method and system for error correction in flash memory
11/05/2008CN101300678A Semiconductor memory device having cross-point structure
11/05/2008CN101300641A Dynamic random access memory device and method for self-refreshing memory cells
11/05/2008CN101300640A Methods of implementing magnetic tunnel junction current sensors
11/05/2008CN101299454A Method for preparing nano composite phase-changing material
11/05/2008CN101299453A Nano composite phase-changing material and preparation method thereof
11/05/2008CN101299348A Semiconductor device, static state memory unit and semiconductor memory circuit
11/05/2008CN101299347A Information storage device using movement of magnetic domain wall, and methods of manufacturing and operating the information storage device
11/05/2008CN100431267C Synchronous mirror delay (SMD) circuit and method including a ring oscillator for timing coarse and fine delay intervals
11/05/2008CN100431135C Chip of memory, chip-on-chip device of using same and its mfg. method
11/05/2008CN100431049C Semiconductor memory device
11/05/2008CN100431048C Semiconductor memory device for producing inner data readout time sequence in inner part
11/05/2008CN100431047C Random-access memory cell/four-transistor random-access memory cell and storing device
11/05/2008CN100431046C Memory device
11/05/2008CN100431045C Non-volatile semiconductor memory
11/05/2008CN100431044C Memory
11/05/2008CN100431043C Magnetic memory with write inhibit selection and the writing method for same
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