Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
10/2008
10/16/2008WO2008124704A1 Spin transfer torque magnetoresistive random access memory and design methods
10/16/2008WO2008123023A1 Spin relaxation/change method, spin current detection method, and spintronics device utilizing spin relaxation
10/16/2008WO2008083221A3 Programming non-volatile memory with reduced program disturb by using different pre-charge enable voltages
10/16/2008WO2007098044A3 Multi-bit memory cell having electrically floating body transistor, and method of programming and reading same
10/16/2008US20080253215 Semiconductor memory circuit
10/16/2008US20080253213 Semiconductor memory device and refresh method for the same
10/16/2008US20080253212 Semiconductor memory device
10/16/2008US20080253206 Metal programmable self-timed memories
10/16/2008US20080253197 Predictive Programming in Non-Volatile Memory
10/16/2008US20080253189 Memory unit
10/16/2008US20080253187 Multiple select gate architecture
10/16/2008US20080253184 Non volatile memory
10/16/2008US20080253180 Hardened Memory Cell
10/16/2008US20080253179 Semiconductor device, an electronic device and a method for operating the same
10/16/2008US20080253178 MRAM with enhanced programming margin
10/16/2008US20080253177 Write Operations for Phase-Change-Material Memory
10/16/2008US20080253176 Nonvolatile magnetic memory device and photomask
10/16/2008US20080253175 Nonvolatile magnetic memory device and photomask
10/16/2008US20080253174 Magnetoresistance effect element and magnetoresistive random access memory using the same
10/16/2008US20080253173 Magnetic random access memory
10/16/2008US20080253172 Semiconductor integrated circuit
10/16/2008US20080253171 Semiconductor integrated circuit
10/16/2008US20080253170 Semiconductor device
10/16/2008US20080253169 Semiconductor memory device and writing method thereof
10/16/2008US20080253168 Integrated circuit, resistivity changing memory device, memory module, and method of fabricating an integrated circuit
10/16/2008US20080253167 Integrated Circuit, Method of Operating an Integrated Circuit, Method of Manufacturing an Integrated Circuit, Active Element, Memory Module, and Computing System
10/16/2008US20080253166 Integrated Circuit, Method for Manufacturing an Integrated Circuit, Memory Cell Array, Memory Module, and Device
10/16/2008US20080253165 Method of Manufacturing a Memory Device, Memory Device, Cell, Integrated Circuit, Memory Module, and Computing System
10/16/2008US20080253164 Integrated Circuit, Resistivity Changing Memory Device, Memory Module and Method of Fabricating an Integrated Circuit
10/16/2008US20080253163 Ferroelectric random access memory circuits for guarding against operation with out-of-range voltages and methods of operating same
10/16/2008US20080252754 Card based image manipulation method with card skew correction
10/16/2008US20080252747 Vliw image processor
10/16/2008US20080252734 Card based image manipulation method for camera
10/16/2008US20080252733 Camera printer operation method with media pull sensing
10/16/2008US20080252732 Image manipulation method for camera
10/16/2008US20080252696 Inkjet Printer Having A Printhead With A Bi-Layer Thermal Actuator Coil
10/16/2008US20080252694 Ink jet printhead with glass nozzle chambers
10/16/2008US20080252691 Inkjet nozzle chamber holding two fluids
10/16/2008US20080251860 Semiconductor Memory Device
10/16/2008US20080251777 Field Effect Device with a Channel with a Switchable Conductivity
10/16/2008DE102006020179B4 Halbleiterwiderstandsspeicherbauelement und Herstellungsverfahren Resistance semiconductor memory device and manufacturing method
10/16/2008DE102004003357B4 Dynamische, in FeRAMS integrierte Referenzspannungskalibrierung Dynamic, integrated in FeRAMS reference voltage calibration
10/16/2008CA2680752A1 Spin transfer torque magnetoresistive random access memory and design methods
10/15/2008EP1979818A1 Reducing power consumption by disabling refresh of unused portions of dram during periods of device inactivity
10/15/2008EP1932158A4 Memory with output control
10/15/2008EP1932157A4 Multiple independent serial link memory
10/15/2008EP1929480A4 Daisy chain cascading devices
10/15/2008EP1924999A4 Storage element with clear operation and method thereof
10/15/2008EP1747560B1 Latched programming of memory and method
10/15/2008EP1640872B1 Data transfer method and system
10/15/2008CN101288186A A magnetoresistive tunnel junction magnetic device and its application to MRAM
10/15/2008CN101288169A Method for using a memory cell comprising switchable semiconductor memory element with trimmable resistance
10/15/2008CN101286547A Semiconductor structure and its manufacture method
10/15/2008CN101286522A Nonvolatile memory device and method of fabricating the same
10/15/2008CN101286365A Multibit ROM memory
10/15/2008CN101286364A Phase-change memorizer 1R1T structure and its driver circuit design method
10/15/2008CN101286363A Phase-change memorizer driver circuit
10/15/2008CN101286362A Embedded type dynamic random access memory
10/15/2008CN101286361A Semiconductor memory device
10/15/2008CN101286360A Semiconductor integrated circuit
10/15/2008CN100426509C Ultraviolet erasing semiconductor memory
10/15/2008CN100426418C Refresh controller with low peak current
10/15/2008CN100426417C 半导体存储装置 The semiconductor memory device
10/15/2008CN100426257C Semiconductor integrated circuit device
10/15/2008CN100426245C Storage medium reproducing apparatus, storage medium reproducing method for reading information from storage medium
10/14/2008US7437629 Method for checking the refresh function of an information memory
10/14/2008US7437592 Information processing device using variable operation frequency
10/14/2008US7437591 Method and apparatus for hardware timing optimizer
10/14/2008US7437498 Method and system for optimizing reliability and performance of programming data in non-volatile memory devices
10/14/2008US7437386 System and method for a multi-node environment with shared storage
10/14/2008US7436730 Method and device for controlling internal power voltage, and semiconductor memory device having the same
10/14/2008US7436728 Fast random access DRAM management method including a method of comparing the address and suspending and storing requests
10/14/2008US7436722 Semiconductor device
10/14/2008US7436717 Semiconductor device having mechanism capable of high-speed operation
10/14/2008US7436712 Nonvolatile memory device including circuit formed of thin film transistors
10/14/2008US7436711 Semiconductor memory device
10/14/2008US7436710 EEPROM memory device with cell having NMOS in a P pocket as a control gate, PMOS program/erase transistor, and PMOS access transistor in a common well
10/14/2008US7436708 NAND memory device column charging
10/14/2008US7436707 Flash memory cell structure and operating method thereof
10/14/2008US7436706 Method and apparatus for varying the programming duration and/or voltage of an electrically floating body transistor, and memory cell array implementing same
10/14/2008US7436705 Multiple level cell memory device with single bit per cell, re-mappable memory block
10/14/2008US7436704 Non-volatile memory devices and method thereof
10/14/2008US7436703 Active boosting to minimize capacitive coupling effect between adjacent gates of flash memory devices
10/14/2008US7436702 Integrated circuit with a data memory protected against UV erasure
10/14/2008US7436700 MRAM memory cell having a weak intrinsic anisotropic storage layer and method of producing the same
10/14/2008US7436699 Nonvolatile semiconductor memory device
10/14/2008US7436698 MRAM arrays and methods for writing and reading magnetic memory devices
10/14/2008US7436697 Memory cell, memory using the memory cell, memory cell manufacturing method, and memory recording/reading method
10/14/2008US7436696 Read-preferred SRAM cell design
10/14/2008US7436695 Resistive memory including bipolar transistor access devices
10/14/2008US7436694 Nonvolatile memory cell
10/14/2008US7436693 Phase-change semiconductor memory device and method of programming the same
10/14/2008US7436692 Phase change memory cell with junction selector and manufacturing method thereof
10/14/2008US7436691 Semiconductor storage device, operation method of the same and test method of the same
10/14/2008US7436247 Step-down circuit with stabilized output voltage
10/14/2008US7436230 Delay locked loop with improved jitter and clock delay compensating method thereof
10/14/2008US7434915 Inkjet printhead chip with a side-by-side nozzle arrangement layout
10/09/2008WO2008121973A1 Software programmable logic using spin transfer torque magnetoresistive devices
10/09/2008WO2008121577A1 Soft bit data transmission for error correction control in non-volatile memory
10/09/2008WO2008121535A1 Non-volatile memory and method for compensation for voltage drops along a word line
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