Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
08/2008
08/12/2008US7411860 Multiport semiconductor memory device
08/12/2008US7411859 Multi-port memory device for buffering between hosts
08/12/2008US7411856 Semiconductor device with improved power supply arrangement
08/12/2008US7411855 Semiconductor device with improved power supply arrangement
08/12/2008US7411841 Memory having storage means
08/12/2008US7411837 Method for operating an electrical writable and erasable memory cell and a memory device for electrical memories
08/12/2008US7411835 Discharge circuit for a capacitive load
08/12/2008US7411833 Nitride trapping memory device and method for reading the same
08/12/2008US7411832 Programming a non-volatile memory device
08/12/2008US7411830 Nonvolatile memory cell having current compensated for temperature dependency and data read method thereof
08/12/2008US7411829 Method and apparatus for programming single-poly pFET-based nonvolatile memory cells
08/12/2008US7411828 Method and apparatus for programming single-poly pFET-based nonvolatile memory cells
08/12/2008US7411827 Boosting to control programming of non-volatile memory
08/12/2008US7411823 In-service reconfigurable DRAM and flash memory device
08/12/2008US7411822 Nonvolatile memory cell arrangement
08/12/2008US7411821 Method and apparatus to protect nonvolatile memory from viruses
08/12/2008US7411820 Three-level nonvolatile semiconductor memory device and associated method of operation
08/12/2008US7411819 Semiconductor integrated circuit device
08/12/2008US7411818 Programmable fuse/non-volatile memory structures using externally heated phase change material
08/12/2008US7411817 Magnetic memory with a magnetic tunnel junction written in a thermally assisted manner, and method for writing the same
08/12/2008US7411816 Enhanced MRAM reference bit programming structure
08/12/2008US7411815 Memory write circuit
08/12/2008US7411814 Programmable magnetic memory device FP-MRAM
08/12/2008US7411813 Semiconductor device
08/12/2008US7411812 Memory architecture and method of manufacture and operation thereof
08/12/2008US7411811 Semiconductor storage device
08/12/2008US7411810 One-time programmable memory
08/12/2008US7411809 Ferroelectric memory to be tested by applying disturbance voltage to a plurality of ferroelectric capacitors at once in direction to weaken polarization, and method of testing the same
08/12/2008US7411808 Method for reading ROM cell
08/12/2008US7411806 Memory module and memory system
08/12/2008US7411805 Semiconductor integrated circuit device
08/12/2008US7411803 Resistive coupled hall effect sensor
08/12/2008US7411263 Magnetic memory device
08/12/2008US7411262 Self-aligned, low-resistance, efficient memory array
08/12/2008US7411256 Semiconductor integrated circuit device capacitive node interconnect
08/12/2008US7411238 Semiconductor integrated circuit device and a method of manufacturing the same
08/12/2008US7411235 Spin transistor, programmable logic circuit, and magnetic memory
08/12/2008US7410250 Inkjet nozzle with supply duct dimensioned for viscous damping
08/12/2008US7410243 Inkjet nozzle with resiliently biased ejection actuator
08/07/2008WO2008093807A1 Monitor burn-in test device and monitor burn-in test method
08/07/2008WO2008093415A1 Semiconductor storage device
08/07/2008WO2008045966A3 Dynamic word line drivers and decoders for memory arrays
08/07/2008US20080189472 Semiconductor storage device and method of controlling the same
08/07/2008US20080186779 Semiconductor device and memory and method of operating thereof
08/07/2008US20080186777 Relaxed metal pitch memory architectures
08/07/2008US20080186772 Non-volatile memory devices having floating-gates fets with different source-gate and drain-gate border lengths
08/07/2008US20080186769 Method for metal bit line arrangement
08/07/2008US20080186763 Twin MONOS array for high speed application
08/07/2008US20080186762 Phase-change memory element
08/07/2008US20080186761 Memory Cell with Separate Read and Program Paths
08/07/2008US20080186760 Programmable fuse/non-volatile memory structures using externally heated phase change material
08/07/2008US20080186759 Magnetic random access memory and write method of the same
08/07/2008US20080186758 Magnetic memory device
08/07/2008US20080186757 Advanced MRAM design
08/07/2008US20080186756 Nanotube-Based Switching Elements with Multiple Controls
08/07/2008US20080186755 Memory cell device and programming methods
08/07/2008US20080186754 Ferroelectric semiconductor storage device
08/07/2008US20080186752 Memory cell with independent-gate controlled access devices and memory using the cell
08/07/2008DE10312262B4 Rekonfigurieren von Speicherungsmodi in einem Speicher Reconfiguring Speicherungsmodi in a memory
08/07/2008DE102008006737A1 Speicher, der auf einem gemeinsamen Substrat konfiguriert ist Memory that is configured on a common substrate
08/07/2008DE102007005543A1 Circuit for detection of electrical no-load operation, has bidirectional rectifier configured such that it receives differential input signals and amplifier is so configured that it receives input signal on basis of detected output signal
08/06/2008EP1953762A1 Memory device with reduced standby power consumption and method for operating same
08/06/2008EP1714290B1 Efficient verification for coarse/fine programming of non-volatile memory
08/06/2008EP1605468B1 Semiconductor memory
08/06/2008CN101238523A Method for multilevel programming of phase change memory cells using a percolation algorithm
08/06/2008CN101238522A Method and apparatus for varying the programming duration and/or voltage of an electrically floating body transistor, and memory cell array implementing same
08/06/2008CN101238521A 3D inductor and transformer devices in MRAM embedded integrated circuits
08/06/2008CN101238520A MRAM embedded smart power integrated circuits
08/06/2008CN101237026A Memory cell having a side electrode
08/06/2008CN101237025A Nonvolatile memory devices and methods of fabricating the same
08/06/2008CN101237024A Memory cell and its making method
08/06/2008CN101237023A Tunnel magnetoresistance effect film and magnetic device
08/06/2008CN101236985A Memory cell device with coplanar electrode surface and method
08/06/2008CN101236984A Integrated circuit with magnetic memory
08/06/2008CN101236969A Static RAM component
08/06/2008CN101236780A Circuit design standard and implementation method for 3-D solid structure phase change memory chip
08/06/2008CN101236779A Storage device and its programming method
08/06/2008CN101236778A A crossed iron electric memory array structure
08/06/2008CN101236096A Tunnel junction non-contact type displacement measurement method and displacement sensor
08/06/2008CN100409442C Storage system and data transmission method
08/06/2008CN100409428C Non-volatile memory, its production method and operation method
08/06/2008CN100409425C Fabrication process and using method for three dimensional structure memory
08/06/2008CN100409382C Method for homogeneously magnetizing an exchange-coupled layer system of a digital magnetic memory location device
08/06/2008CN100409368C Programmed single unit switching device and integrate circuit
08/06/2008CN100409366C Storage circuit with redundant structure
08/06/2008CN100409365C Pseudo-static DASD and its data refresh method
08/06/2008CN100409364C Semiconductor storage equipment with storage unit array which is divided into block
08/06/2008CN100409363C Data storage device and manufacturing method thereof
08/06/2008CN100409362C Memory device, method for amplifying its bit line, and control device for sensing margin time
08/06/2008CN100409315C Method and apparatus for providing a magnetic tunnel transistor with a self-pinned emitter
08/05/2008US7409489 Scheduling of reclaim operations in non-volatile memory
08/05/2008US7408820 Nonvolatile semiconductor memory with virtual ground array
08/05/2008US7408818 Semiconductor device undergoing defect detection test
08/05/2008US7408813 Block erase for volatile memory
08/05/2008US7408812 Low-voltage single-layer polysilicon EEPROM memory cell
08/05/2008US7408809 Method and apparatus for programming single-poly pFET-based nonvolatile memory cells
08/05/2008US7408808 User configurable commands for flash memory
08/05/2008US7408806 Memory array architecture for a memory device and method of operating the memory array architecture
08/05/2008US7408805 Reducing delays in word line selection
08/05/2008US7408804 Systems for soft programming non-volatile memory utilizing individual verification and additional soft programming of subsets of memory cells
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