Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
07/2008
07/10/2008US20080164503 Ferroelectric Memory Devices Having a Protruding Bottom Electrode and Methods of Forming the Same
07/10/2008DE19641420B4 Schaltungen zum variablen Einstellen der Schwellenspannung für ein Halbleiterbauteil Circuitry for variably setting the threshold voltage for a semiconductor device
07/10/2008DE10338729B4 Magnetspeichervorrichtung mit größerer Referenzzelle A magnetic memory device with a larger reference cell
07/10/2008DE102008003180A1 Speicherauffrischsystem und -verfahren Memory refresh system and method
07/10/2008DE102006060400A1 Speicherkondensator und Speichervorrichtung sowie Verfahren zum Herstellen derselben And storage capacitor memory device and methods for manufacturing the same
07/10/2008DE102004033444B4 Integrierter Speicherschaltungsbaustein Integrated circuit memory block
07/10/2008CA2669907A1 Memory storage devices comprising different ferromagnetic material layers, and methods of making and using the same
07/09/2008EP1942527A1 Spin transistor using stray magnetic field
07/09/2008EP1942504A1 Magnetic domain data storage devices and methods of manufacturing the same
07/09/2008EP1941511A2 Current driven switched magnetic storage cells having improved read and write margins and magnetic memories using such cells
07/09/2008EP1579459B1 Mram memories utilizing magnetic write lines
07/09/2008CN101218650A Read operation for non-volatile storage that includes compensation for coupling
07/09/2008CN101218649A Apparatus and method for improving dynamic refresh in a memory device
07/09/2008CN101217181A Magnetic domain data storage devices and methods of manufacturing the same
07/09/2008CN101217059A Self-timing SRAM access control circuit
07/09/2008CN101217058A Semiconductor storage device and its method
07/09/2008CN100401433C Preparation method and use of polycrystalline FeO thin-film materials
07/09/2008CN100401424C Semiconductor storage device
07/09/2008CN100401423C Magnetic resistance type random access internal storage circuit
07/09/2008CN100401421C Integrated memory having a voltage generator circuit for generating a voltage supply for a read/write amplifier
07/09/2008CN100401420C Fuse circuit
07/08/2008US7398544 Configurable cableCARD
07/08/2008US7398413 Memory device signaling system and method with independent timing calibration for parallel signal paths
07/08/2008US7398406 Data processor
07/08/2008US7397880 Synchronization circuit and synchronization method
07/08/2008US7397714 Setting method of chip initial state
07/08/2008US7397713 Flash EEprom system
07/08/2008US7397711 Distributed write data drivers for burst access memories
07/08/2008US7397710 Internal voltage level control circuit and semiconductor memory device as well as method of controlling the same
07/08/2008US7397702 Read/verify circuit for multilevel memory cells with ramp read voltage, and read/verify method thereof
07/08/2008US7397700 Non-volatile memory electronic device with NAND structure being monolithically integrated on semiconductor
07/08/2008US7397699 Channel discharging after erasing flash memory devices
07/08/2008US7397697 Multi-bit-per-cell flash EEPROM memory with refresh
07/08/2008US7397696 Current sensing architecture for high bitline voltage, rail to rail output swing and Vcc noise cancellation
07/08/2008US7397694 Magnetic memory arrays
07/08/2008US7397693 Semiconductor memory device with memory cells operated by boosted voltage
07/08/2008US7397692 High performance single event upset hardened SRAM cell
07/08/2008US7397691 Static random access memory cell with improved stability
07/08/2008US7397690 Multi-valued digital information retaining elements and memory devices
07/08/2008US7397689 Resistive memory device
07/08/2008US7397688 Nonvolatile variable resistor, memory device, and scaling method of nonvolatile variable resistor
07/08/2008US7397687 Ferroelectric memory device having ferroelectric capacitor
07/08/2008US7397686 Memory system combining flash EEPROM and FeRAM
07/08/2008US7397685 Semiconductor memory device having error checking and correcting circuit
07/08/2008US7397682 Associative memory having a mask function for use in network devices and network system
07/08/2008US7397624 Transducers for ferroelectric storage medium
07/08/2008US7397123 Semiconductor integrated circuit device and process for manufacturing the same
07/08/2008US7397099 Method of forming nano-sized MTJ cell without contact hole
07/08/2008US7397098 Using sense lines to thermally control the state of an MRAM
07/08/2008US7397077 Magnetic memory devices having patterned heater layers therein that utilize thermally conductive sidewall materials to increase heat transfer when writing memory data
07/08/2008US7396692 Method for increasing ferroelectric characteristics of polymer memory cells
07/03/2008WO2007131226A3 Multi-valued logic/memory and methods thereof
07/03/2008US20080159047 Internal voltage generation circuit
07/03/2008US20080159042 Latch circuits and operation circuits having scalable nonvolatile nanotube switches as electronic fuse replacement elements
07/03/2008US20080159008 Operating method of p-channel non-volatile memory
07/03/2008US20080159006 Non-volatile memory device and method of programming the same
07/03/2008US20080159001 Apparatus for controlling bitline bias voltage
07/03/2008US20080158999 Methods, apparatus, and systems for flash memory bit line charging
07/03/2008US20080158995 Flash EEPROM System
07/03/2008US20080158994 Method for Erasing Data of NAND Flash Memory Device
07/03/2008US20080158987 Non-volatile memory device and data read method and program verify method of non-volatile memory device
07/03/2008US20080158980 Non-volatile storage system with initial programming voltage based on trial
07/03/2008US20080158970 Biasing non-volatile storage to compensate for temperature variations
07/03/2008US20080158965 Operating method of non-volatile memory
07/03/2008US20080158964 Semiconductor memory device which includes stacked gate having charge accumulation layer and control gate
07/03/2008US20080158954 Multi-level operation in dual element cells using a supplemental programming level
07/03/2008US20080158953 Non-volatile memory device and method of programming a multi level cell in the same
07/03/2008US20080158950 Apparatus, method, and system for flash memory
07/03/2008US20080158945 Semiconductor memory device
07/03/2008US20080158944 Nonvolatile memory device and method for fabricating the same
07/03/2008US20080158943 Method of fabricating an integrated circuit having a memory including a low-k dielectric material
07/03/2008US20080158942 Memory having storage locations within a common volume of phase change material
07/03/2008US20080158941 Nonvolatile memory device using variable resistive elements
07/03/2008US20080158940 Non-volatile memory device and method of operating the same
07/03/2008US20080158939 Memory having improved power design
07/03/2008US20080158938 Memory cells with lower power consumption during a write operation
07/03/2008US20080158937 Memory device having a threshold voltage switching device and a method for storing information in the memory device
07/03/2008US20080158936 Nonvolatile resistive memories having scalable two-terminal nanotube switches
07/03/2008US20080158935 Resistance changing memory cell architecture
07/03/2008US20080158934 Semiconductor Memory Device With Ferroelectric Device And Refresh Method Thereof
07/03/2008US20080158930 Semiconductor memory device for sensing voltages of bit lines in high speed
07/03/2008US20080158737 Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system
07/03/2008US20080158306 Nozzle Arrangement With Expandable Actuator
07/03/2008US20080158302 Nozzle arrangement with a magnetic field generator
07/03/2008US20080158301 Ink Nozzle Unit Exploiting Magnetic Fields
07/03/2008US20080157259 Semiconductor device, method of controlling the same, and method of manufacturing the same
07/03/2008US20080157050 Phase-change memory and fabrication method thereof
07/03/2008DE10350168B4 Speicheranordnung und Verfahren zum Betreiben einer solchen Memory device and method of operating such a
07/03/2008DE10241928B4 Synchronisationseinrichtung für eine Halbleiterspeichereinrichtung und Halbleiterspeichereinrichtung Synchronisation device for a semiconductor memory device and semiconductor memory device
07/03/2008DE102007060205A1 Verzögerte Leseverstärker-Multiplexer-Isolation Delayed sense amplifier-multiplexer insulation
07/03/2008DE102007058322A1 Speicher mit Taktverteilungsoptionen Memory clock distribution options
07/03/2008DE102007058321A1 Speicher mit Datentaktempfänger und Befehls-/Adresstaktempfänger Memory data clock receiver and command / address clock receiver
07/03/2008DE102007026856A1 Non-volatile memory component has memory cell array for storing data , page buffer having bitline selection device, which is configured for selectively coupling bit lines on scanning node
07/03/2008DE102004004091B4 Vorrichtung zur Verwendung bei der Synchronisation von Taktsignalen, sowie Taktsignal-Synchronisationsverfahren Apparatus for use in the synchronization of clock signals, and clock signal synchronization method
07/02/2008EP1939889A1 Memory cell programming methods capable of reducing coupling effects
07/02/2008EP1939888A1 Memory cell equipped with double-gate transistors, with independent and asymmetric gates
07/02/2008EP1939887A1 DRAM with disabled refresh in test mode
07/02/2008EP1939886A1 Storage element and memory
07/02/2008EP1938343A1 Novel phase change magnetic material
07/02/2008EP1938330A2 Non-volatile switching and memory devices using vertical nanotubes