Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008) |
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07/10/2008 | US20080164503 Ferroelectric Memory Devices Having a Protruding Bottom Electrode and Methods of Forming the Same |
07/10/2008 | DE19641420B4 Schaltungen zum variablen Einstellen der Schwellenspannung für ein Halbleiterbauteil Circuitry for variably setting the threshold voltage for a semiconductor device |
07/10/2008 | DE10338729B4 Magnetspeichervorrichtung mit größerer Referenzzelle A magnetic memory device with a larger reference cell |
07/10/2008 | DE102008003180A1 Speicherauffrischsystem und -verfahren Memory refresh system and method |
07/10/2008 | DE102006060400A1 Speicherkondensator und Speichervorrichtung sowie Verfahren zum Herstellen derselben And storage capacitor memory device and methods for manufacturing the same |
07/10/2008 | DE102004033444B4 Integrierter Speicherschaltungsbaustein Integrated circuit memory block |
07/10/2008 | CA2669907A1 Memory storage devices comprising different ferromagnetic material layers, and methods of making and using the same |
07/09/2008 | EP1942527A1 Spin transistor using stray magnetic field |
07/09/2008 | EP1942504A1 Magnetic domain data storage devices and methods of manufacturing the same |
07/09/2008 | EP1941511A2 Current driven switched magnetic storage cells having improved read and write margins and magnetic memories using such cells |
07/09/2008 | EP1579459B1 Mram memories utilizing magnetic write lines |
07/09/2008 | CN101218650A Read operation for non-volatile storage that includes compensation for coupling |
07/09/2008 | CN101218649A Apparatus and method for improving dynamic refresh in a memory device |
07/09/2008 | CN101217181A Magnetic domain data storage devices and methods of manufacturing the same |
07/09/2008 | CN101217059A Self-timing SRAM access control circuit |
07/09/2008 | CN101217058A Semiconductor storage device and its method |
07/09/2008 | CN100401433C Preparation method and use of polycrystalline FeO thin-film materials |
07/09/2008 | CN100401424C Semiconductor storage device |
07/09/2008 | CN100401423C Magnetic resistance type random access internal storage circuit |
07/09/2008 | CN100401421C Integrated memory having a voltage generator circuit for generating a voltage supply for a read/write amplifier |
07/09/2008 | CN100401420C Fuse circuit |
07/08/2008 | US7398544 Configurable cableCARD |
07/08/2008 | US7398413 Memory device signaling system and method with independent timing calibration for parallel signal paths |
07/08/2008 | US7398406 Data processor |
07/08/2008 | US7397880 Synchronization circuit and synchronization method |
07/08/2008 | US7397714 Setting method of chip initial state |
07/08/2008 | US7397713 Flash EEprom system |
07/08/2008 | US7397711 Distributed write data drivers for burst access memories |
07/08/2008 | US7397710 Internal voltage level control circuit and semiconductor memory device as well as method of controlling the same |
07/08/2008 | US7397702 Read/verify circuit for multilevel memory cells with ramp read voltage, and read/verify method thereof |
07/08/2008 | US7397700 Non-volatile memory electronic device with NAND structure being monolithically integrated on semiconductor |
07/08/2008 | US7397699 Channel discharging after erasing flash memory devices |
07/08/2008 | US7397697 Multi-bit-per-cell flash EEPROM memory with refresh |
07/08/2008 | US7397696 Current sensing architecture for high bitline voltage, rail to rail output swing and Vcc noise cancellation |
07/08/2008 | US7397694 Magnetic memory arrays |
07/08/2008 | US7397693 Semiconductor memory device with memory cells operated by boosted voltage |
07/08/2008 | US7397692 High performance single event upset hardened SRAM cell |
07/08/2008 | US7397691 Static random access memory cell with improved stability |
07/08/2008 | US7397690 Multi-valued digital information retaining elements and memory devices |
07/08/2008 | US7397689 Resistive memory device |
07/08/2008 | US7397688 Nonvolatile variable resistor, memory device, and scaling method of nonvolatile variable resistor |
07/08/2008 | US7397687 Ferroelectric memory device having ferroelectric capacitor |
07/08/2008 | US7397686 Memory system combining flash EEPROM and FeRAM |
07/08/2008 | US7397685 Semiconductor memory device having error checking and correcting circuit |
07/08/2008 | US7397682 Associative memory having a mask function for use in network devices and network system |
07/08/2008 | US7397624 Transducers for ferroelectric storage medium |
07/08/2008 | US7397123 Semiconductor integrated circuit device and process for manufacturing the same |
07/08/2008 | US7397099 Method of forming nano-sized MTJ cell without contact hole |
07/08/2008 | US7397098 Using sense lines to thermally control the state of an MRAM |
07/08/2008 | US7397077 Magnetic memory devices having patterned heater layers therein that utilize thermally conductive sidewall materials to increase heat transfer when writing memory data |
07/08/2008 | US7396692 Method for increasing ferroelectric characteristics of polymer memory cells |
07/03/2008 | WO2007131226A3 Multi-valued logic/memory and methods thereof |
07/03/2008 | US20080159047 Internal voltage generation circuit |
07/03/2008 | US20080159042 Latch circuits and operation circuits having scalable nonvolatile nanotube switches as electronic fuse replacement elements |
07/03/2008 | US20080159008 Operating method of p-channel non-volatile memory |
07/03/2008 | US20080159006 Non-volatile memory device and method of programming the same |
07/03/2008 | US20080159001 Apparatus for controlling bitline bias voltage |
07/03/2008 | US20080158999 Methods, apparatus, and systems for flash memory bit line charging |
07/03/2008 | US20080158995 Flash EEPROM System |
07/03/2008 | US20080158994 Method for Erasing Data of NAND Flash Memory Device |
07/03/2008 | US20080158987 Non-volatile memory device and data read method and program verify method of non-volatile memory device |
07/03/2008 | US20080158980 Non-volatile storage system with initial programming voltage based on trial |
07/03/2008 | US20080158970 Biasing non-volatile storage to compensate for temperature variations |
07/03/2008 | US20080158965 Operating method of non-volatile memory |
07/03/2008 | US20080158964 Semiconductor memory device which includes stacked gate having charge accumulation layer and control gate |
07/03/2008 | US20080158954 Multi-level operation in dual element cells using a supplemental programming level |
07/03/2008 | US20080158953 Non-volatile memory device and method of programming a multi level cell in the same |
07/03/2008 | US20080158950 Apparatus, method, and system for flash memory |
07/03/2008 | US20080158945 Semiconductor memory device |
07/03/2008 | US20080158944 Nonvolatile memory device and method for fabricating the same |
07/03/2008 | US20080158943 Method of fabricating an integrated circuit having a memory including a low-k dielectric material |
07/03/2008 | US20080158942 Memory having storage locations within a common volume of phase change material |
07/03/2008 | US20080158941 Nonvolatile memory device using variable resistive elements |
07/03/2008 | US20080158940 Non-volatile memory device and method of operating the same |
07/03/2008 | US20080158939 Memory having improved power design |
07/03/2008 | US20080158938 Memory cells with lower power consumption during a write operation |
07/03/2008 | US20080158937 Memory device having a threshold voltage switching device and a method for storing information in the memory device |
07/03/2008 | US20080158936 Nonvolatile resistive memories having scalable two-terminal nanotube switches |
07/03/2008 | US20080158935 Resistance changing memory cell architecture |
07/03/2008 | US20080158934 Semiconductor Memory Device With Ferroelectric Device And Refresh Method Thereof |
07/03/2008 | US20080158930 Semiconductor memory device for sensing voltages of bit lines in high speed |
07/03/2008 | US20080158737 Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system |
07/03/2008 | US20080158306 Nozzle Arrangement With Expandable Actuator |
07/03/2008 | US20080158302 Nozzle arrangement with a magnetic field generator |
07/03/2008 | US20080158301 Ink Nozzle Unit Exploiting Magnetic Fields |
07/03/2008 | US20080157259 Semiconductor device, method of controlling the same, and method of manufacturing the same |
07/03/2008 | US20080157050 Phase-change memory and fabrication method thereof |
07/03/2008 | DE10350168B4 Speicheranordnung und Verfahren zum Betreiben einer solchen Memory device and method of operating such a |
07/03/2008 | DE10241928B4 Synchronisationseinrichtung für eine Halbleiterspeichereinrichtung und Halbleiterspeichereinrichtung Synchronisation device for a semiconductor memory device and semiconductor memory device |
07/03/2008 | DE102007060205A1 Verzögerte Leseverstärker-Multiplexer-Isolation Delayed sense amplifier-multiplexer insulation |
07/03/2008 | DE102007058322A1 Speicher mit Taktverteilungsoptionen Memory clock distribution options |
07/03/2008 | DE102007058321A1 Speicher mit Datentaktempfänger und Befehls-/Adresstaktempfänger Memory data clock receiver and command / address clock receiver |
07/03/2008 | DE102007026856A1 Non-volatile memory component has memory cell array for storing data , page buffer having bitline selection device, which is configured for selectively coupling bit lines on scanning node |
07/03/2008 | DE102004004091B4 Vorrichtung zur Verwendung bei der Synchronisation von Taktsignalen, sowie Taktsignal-Synchronisationsverfahren Apparatus for use in the synchronization of clock signals, and clock signal synchronization method |
07/02/2008 | EP1939889A1 Memory cell programming methods capable of reducing coupling effects |
07/02/2008 | EP1939888A1 Memory cell equipped with double-gate transistors, with independent and asymmetric gates |
07/02/2008 | EP1939887A1 DRAM with disabled refresh in test mode |
07/02/2008 | EP1939886A1 Storage element and memory |
07/02/2008 | EP1938343A1 Novel phase change magnetic material |
07/02/2008 | EP1938330A2 Non-volatile switching and memory devices using vertical nanotubes |