Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
01/2009
01/01/2009US20090003036 Method of making 3D R/W cell with reduced reverse leakage
01/01/2009US20090003035 Conditioning operations for memory cells
01/01/2009US20090003034 Multiple write configurations for a memory cell
01/01/2009US20090003033 Quasi-differential read operation
01/01/2009US20090003032 Integrated circuit including resistivity changing material having a planarized surface
01/01/2009US20090003031 Computation Processing Circuit Using Ferroelectric Capacitor
01/01/2009US20090003030 Methods for ferroelectric domain reading
01/01/2009US20090002025 Memory utilizing oxide nanolaminates
01/01/2009US20090001348 Semiconductor device
01/01/2009US20090001342 Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
12/2008
12/31/2008WO2009003060A1 Magnetic shielding in magnetic multilayer structures
12/31/2008WO2009002940A2 Systems and methods of reading nonvolatile memory
12/31/2008WO2009002477A1 High forward current diodes for reverse write 3d cell and method of making thereof
12/31/2008WO2009002476A2 Nonvolatile memory device containing a carbon- or nitrogen-doped diode and methods of making andoperating the same
12/31/2008WO2009001426A1 Semiconductor device
12/31/2008WO2008140643A3 Apparatus for hardening a static random access memory cell from single event upsets
12/31/2008WO2008136813A3 Semiconductor memory having both volatile and non-volatile functionality and method of operating
12/31/2008WO2008108822A3 Electrically actuated switch
12/31/2008WO2008057822A3 Nonvolatile memory with variable read threshold
12/31/2008EP2009644A1 Memory device, memory controller and memory system
12/31/2008EP2008282A2 Programmable cell
12/31/2008EP1770711B1 Semiconductor storage device
12/31/2008EP1634301B1 Apparatus for measuring current in sensing a memory cell
12/31/2008CN101335330A Resistance memory with tungsten compound and manufacturing
12/31/2008CN101335329A Construction for enhancing reliability of phase-change memory storage unit and manufacturing method thereof
12/31/2008CN101335328A Phase-change memory device unit construction and manufacturing method thereof
12/31/2008CN101335327A Method for controlling phase-change material or phase-change memory unit volume change and corresponding construction
12/31/2008CN101335288A Magnetic random access memory and manufacturing method therefor
12/31/2008CN101335046A Phase-change memory
12/31/2008CN101335045A Write circuit of phase-change memory
12/31/2008CN100448015C Systems and methods for a magnetic memory device that includes two word line transistors
12/31/2008CN100447900C Overerase protection of memory cells for nonvolatile memory
12/31/2008CN100447898C High density memory read amplifier
12/31/2008CN100447897C Semiconductor storage and its testing method
12/31/2008CN100447896C Semiconductor memory device
12/31/2008CN100447895C Variable capacitances for memory cells within a cell group
12/31/2008CN100447894C MRAM having memory cell array in which cross-point memory cells are arranged by hierarchical bit line scheme and data read method thereof
12/31/2008CN100447893C Magnetic random access memory
12/31/2008CN100447892C Magnetic storage device with soft reference layer
12/31/2008CN100447891C Low Power MRAM memory array
12/30/2008US7472302 Method and apparatus for reducing leakage power in a cache memory using adaptive time-based decay
12/30/2008US7471588 Dual port random-access-memory circuitry
12/30/2008US7471585 Semiconductor memory
12/30/2008US7471581 Wide dynamic range and high speed voltage mode sensing for a multilevel digital non-volatile memory
12/30/2008US7471579 Semiconductor memory and test method for the same
12/30/2008US7471576 Method of transferring data in an electrically programmable memory
12/30/2008US7471572 System and method for enhancing erase performance in a CMOS compatible EEPROM device
12/30/2008US7471571 Method for programming a memory device suitable to minimize the lateral coupling effects between memory cells
12/30/2008US7471570 Embedded EEPROM array techniques for higher density
12/30/2008US7471569 Memory having parity error correction
12/30/2008US7471566 Self-boosting system for flash memory cells
12/30/2008US7471564 Trapping storage flash memory cell structure with inversion source and drain regions
12/30/2008US7471563 Semiconductor memory device
12/30/2008US7471562 Method and apparatus for accessing nonvolatile memory with read error by changing read reference
12/30/2008US7471561 Method for preventing memory from generating leakage current and memory thereof
12/30/2008US7471560 Electronic device including a memory array and conductive lines
12/30/2008US7471559 Semiconductor memory device for storing multilevel data
12/30/2008US7471558 Semiconductor storage device
12/30/2008US7471557 Reading phase change memories to reduce read disturbs
12/30/2008US7471556 Local bank write buffers for accelerating a phase-change memory
12/30/2008US7471555 Thermally insulated phase change memory device
12/30/2008US7471554 Phase change memory latch
12/30/2008US7471553 Phase change memory device and program method thereof
12/30/2008US7471552 Analog phase change memory
12/30/2008US7471551 Magnetic memory
12/30/2008US7471550 Magnetic memory
12/30/2008US7471549 Semiconductor memory device
12/30/2008US7471548 Structure of static random access memory with stress engineering for stability
12/30/2008US7471547 Memory cell array
12/30/2008US7471546 Hierarchical six-transistor SRAM
12/30/2008US7471545 Semiconductor memory device
12/30/2008US7471544 Method and apparatus for avoiding cell data destruction caused by SRAM cell instability
12/30/2008US7471543 Storage device and semiconductor device
12/30/2008US7471542 Information storage apparatus storing and reading information by irradiating a storage medium with electron beam
12/30/2008US7471539 High current interconnect structure for IC memory device programming
12/30/2008US7471286 Circuits and methods for driving flat panel displays
12/30/2008US7470963 Magnetoresistive element and magnetic memory
12/30/2008US7470552 Method for production of MRAM elements
12/30/2008US7470352 Sensor arrangement
12/30/2008US7470003 Ink jet printhead with active and passive nozzle chamber structures arrayed on a substrate
12/25/2008US20080316837 Semiconductor memory device capable of controlling potential level of power supply line and/or ground line
12/25/2008US20080316833 Intelligent control of program pulse duration
12/25/2008US20080316831 Nonvolatile semiconductor device, system including the same, and associated methods
12/25/2008US20080316828 Memory in logic cell
12/25/2008US20080316827 Non-volatile storage with individually controllable shield plates between storage elements
12/25/2008US20080316826 Semiconductor device having transistor and capacitor of SOI structure and storing data in nonvolatile manner
12/25/2008US20080316823 Storage device and circuit element switching method thereof
12/25/2008US20080316820 Method of programming memory device
12/25/2008US20080316817 Method and system for programming non-volatile memory cells based on programming of proximate memory cells
12/25/2008US20080316815 Methods of programming multilevel cell nonvolatile memory
12/25/2008US20080316814 Program-verify sensing for a multi-level cell (mlc) flash memory device
12/25/2008US20080316813 Multi-level cell serial-parallel sense scheme for non-volatile flash memory
12/25/2008US20080316812 Programming a memory with varying bits per cell
12/25/2008US20080316811 Method for operating non-volatile storage with individually controllable shield plates between storage elements
12/25/2008US20080316810 Memory unit
12/25/2008US20080316809 High forward current diodes for reverse write 3D cell
12/25/2008US20080316808 Nonvolatile memory device containing carbon or nitrogen doped diode
12/25/2008US20080316807 Semiconductor memory device having metal-insulator transition film resistor
12/25/2008US20080316806 Phase change memory device
12/25/2008US20080316805 Electronic Circuit With a Memory Matrix
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