Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
08/2011
08/09/2011US7995394 Program voltage compensation with word line bias change to suppress charge trapping in memory
08/09/2011US7995392 Semiconductor memory device capable of shortening erase time
08/09/2011US7995387 System and method to read data subject to a disturb condition
08/09/2011US7995384 Electrically isolated gated diode nonvolatile memory
08/09/2011US7995383 Magnetic tunnel junction cell adapted to store multiple digital values
08/09/2011US7995382 Information recording and reproducing apparatus
08/09/2011US7995381 Method of programming resistivity changing memory
08/09/2011US7995380 Negative differential resistance pull up element for DRAM
08/09/2011US7995379 Semiconductor memory device
08/09/2011US7995378 MRAM device with shared source line
08/09/2011US7995377 Semiconductor memory device
08/09/2011US7995376 Semiconductor storage device and manufacturing method thereof
08/09/2011US7995375 Volatile memory elements with elevated power supply levels for programmable logic device integrated circuits
08/09/2011US7995374 Semiconductor memory device, method of manufacturing the same, and method of screening the same
08/09/2011US7995373 Semiconductor memory device and information processing system
08/09/2011US7995372 Resistance change memory device with stabilizing circuit coupled in series with selected resistance change memory cell
08/09/2011US7995371 Threshold device for a memory array
08/09/2011US7995370 Semiconductor memory device and electronic apparatus
08/09/2011US7995366 Homogenous cell array
08/09/2011US7994597 MRAM with coupling valve switching
08/09/2011US7994596 Magnetic tunneling junction film structure with process determined in-plane magnetic anisotropy
08/09/2011US7993957 Phase change memory cell and manufacturing method thereof using minitrenches
08/09/2011US7992968 Fluid ejection device with overlapping firing chamber and drive FET
08/04/2011WO2011094437A2 Memory access methods and apparatus
08/04/2011WO2011094419A1 Multibit programming method in a non-volatile memory allowing a number of data state - fails and data recovery method in case of programming fail
08/04/2011WO2011094417A1 Non-volatile memory with fast binary programming and reduced power consumption
08/04/2011WO2011093363A1 Storage cell and storage method
08/04/2011WO2011093003A1 Semiconductor memory device
08/04/2011WO2011092526A1 A driver for ddr2/3 memory interfaces
08/04/2011US20110188329 Semiconductor integrated circuit
08/04/2011US20110188306 Increased Magnetic Damping for Toggle MRAM
08/04/2011US20110188305 Read disturb free SMT MRAM reference cell circuit
08/04/2011US20110188304 Multiple level cell phase-change memory devices having pre-reading operation resistance drift recovery, memory systems employing such devices and methods of reading memory devices
08/04/2011US20110188303 Phase change memory device generating program current and mehtod thereof
08/04/2011US20110188302 Method of driving phase change memory device capable of reducing heat disturbance
08/04/2011US20110188301 Shared bit line and source line resistive sense memory structure
08/04/2011US20110188300 Non-volatile memory with stray magnetic field compensation
08/04/2011US20110188299 Data storage device
08/04/2011US20110188298 Magnetoresistance element, mram, and initialization method for magnetoresistance element
08/04/2011US20110188297 Magnetic memory element, driving method for same, and nonvolatile storage device
08/04/2011US20110188296 Semiconductor Memory Device and Semiconductor Device
08/04/2011US20110188295 High Performance eDRAM Sense Amplifier
08/04/2011US20110188294 Multiplexer/de-multiplexer Memristive Device
08/04/2011US20110188293 Non-Volatile Memory Cell With Non-Ohmic Selection Layer
08/04/2011US20110188292 Variable resistance memory, operating method and system
08/04/2011US20110188291 Preservation circuit and methods to maintain values representing data in one or more layers of memory
08/04/2011US20110188290 Semiconductor devices including variable resistance materials and methods of operating the same
08/04/2011US20110188289 Access signal adjustment circuits and methods for memory cells in a cross-point array
08/04/2011US20110188288 Semiconductor memory device and driving method therefor
08/04/2011US20110188287 High speed FRAM including a deselect circuit
08/04/2011US20110188284 Circuits and techniques to compensate memory access signals for variations of parameters in multiple layers of memory
08/04/2011US20110188283 Circuits and techniques to compensate data signals for variations of parameters affecting memory cells in cross-point arrays
08/04/2011US20110188281 Local bit lines and methods of selecting the same to access memory elements in cross-point arrays
08/04/2011US20110187410 Nonvolatile latch circuit and logic circuit, and semiconductor device using the same
08/04/2011US20110186803 Multi-resistive state memory device with conductive oxide electrodes
08/03/2011EP2351081A2 Oc dram cell with increased sense margin
08/03/2011EP2351080A2 Generating and exploiting an asymmetric capacitance hysteresis of ferroelectric mim capacitors
08/03/2011EP2351044A1 Data transfer and programming in a memory device
08/03/2011EP2351041A1 Programming non-volatile memory with high resolution variable initial programming pulse
08/03/2011EP2351039A1 Data path for multi-level cell memory, methods for storing and methods for utilizing a memory array
08/03/2011EP2351038A2 Common memory device for variable device width and scalable pre-fetch and page size
08/03/2011EP2351037A1 Mesochronous signaling system with core-clock synchronization
08/03/2011EP2351036A1 A bridging device having a configurable virtual page size
08/03/2011EP2351033A1 Read assist for memory circuits
08/03/2011CN201918172U 适用于fpga电路的非对称结构配置sram Asymmetric structure is suitable for fpga circuit configuration sram
08/03/2011CN1929049B Method for changing magnetism of ferromagnet CrO2 film using laser induction effect
08/03/2011CN1734672B Isolation control circuit and method for a memory device
08/03/2011CN1574089B Current mode output driver and method for controlling output current of the driver
08/03/2011CN102142277A Memory and memory read-write control method and system
08/03/2011CN102142276A Semiconductor apparatus and control method thereof
08/03/2011CN102142275A Static random access memory and implementation method thereof
08/03/2011CN102142274A Semiconductor device
08/03/2011CN102142273A Semiconductor integrated circuit
08/03/2011CN102142272A 半导体器件 Semiconductor devices
08/03/2011CN101625891B Sub-threshold storing unit circuit with high density and high robustness
08/03/2011CN101621115B Binary oxide resistance random access memory (RRAM) storage unit of electric pulse induced resistance conversion characteristics
08/03/2011CN101364434B Phase change memory device with reference cell array
08/02/2011US7992061 Method for testing reliability of solid-state storage medium
08/02/2011US7991954 Memory module, memory system, and information device
08/02/2011US7990776 Semiconductor memory device with optimum refresh cycle according to temperature variation
08/02/2011US7990773 Sub volt flash memory system
08/02/2011US7990772 Memory device having improved programming operation
08/02/2011US7990766 Multi-bit-per-cell flash memory device with non-bijective mapping
08/02/2011US7990764 Post-facto correction for cross coupling in a flash memory
08/02/2011US7990762 Integrated circuits to control access to multiple layers of memory
08/02/2011US7990761 Immunity of phase change material to disturb in the amorphous phase
08/02/2011US7990760 Semiconductor SRAM with alternatively arranged P-well and N-well regions
08/02/2011US7990759 Hardened memory cell
08/02/2011US7990758 Power saving semiconductor memory
08/02/2011US7990756 Semiconductor memory device and method for manufacturing same
08/02/2011US7990755 DRAM including pseudo negative word line
08/02/2011US7990754 Resistance variable memory apparatus
08/02/2011US7990753 Semiconductor memory device
08/02/2011US7990752 Semiconductor memory
08/02/2011US7990751 Drive method of nanogap switching element and storage apparatus equipped with nanogap switching element
08/02/2011US7990750 Ferroelectric memory
08/02/2011US7990749 Variable impedance circuit controlled by a ferroelectric capacitor
08/02/2011US7990748 Information holding method
08/02/2011US7990208 Voltage supply with low power and leakage current
08/02/2011US7989864 Methods for enhancing capacitors having roughened features to increase charge-storage capacity