| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 02/01/2012 | CN202131392U 单晶炉腔体排气系统 Crystal furnace chamber exhaust system |
| 02/01/2012 | CN202131391U 一种太阳能硅单晶炉传热装置 A solar monocrystalline silicon furnace heat transfer device |
| 02/01/2012 | CN202131390U 多晶铸锭生产循环冷却水节能装置 Polycrystalline ingot production cycle cooling water saving devices |
| 02/01/2012 | CN1795141B 金属纳米棒的制造方法及其用途 The method for producing metal nano-rods and use thereof |
| 02/01/2012 | CN102341893A Method for manufacturing silicon carbide semiconductor device |
| 02/01/2012 | CN102341355A Method for calculating temperature distribution in crucible |
| 02/01/2012 | CN102337703A Method for preparing modified calcium sulfate crystal whisker papermaking filler |
| 02/01/2012 | CN102337593A Nonlinear optical crystal 1-ethyl-3-methylimidazol lead tribromide and growing method thereof |
| 02/01/2012 | CN102337592A Sic crystal growth furnace temperature measuring window |
| 02/01/2012 | CN102337591A Ytterbium-doped potassium triyttrium borate laser crystal, and growing method and application thereof |
| 02/01/2012 | CN102337590A Novel medium-wave infrared laser crystal of erbium-activated gadolinium-calcium aluminate |
| 02/01/2012 | CN102337589A Silicon rod workpiece of multi-wire cutting machine |
| 02/01/2012 | CN102337588A Preparation method of polycrystalline mercuric iodide thick film with high orientation |
| 02/01/2012 | CN102337587A Method of growing SiC single crystal and SiC single crystal grown by same |
| 02/01/2012 | CN102337585A Vitreous silica crucible and method of manufacturing silicon ingot |
| 02/01/2012 | CN102337583A System and method for controlling pressure in crystalline silicon ingot furnace |
| 02/01/2012 | CN102337582A Method for manufacturing silicon crystal ingot |
| 02/01/2012 | CN102337581A Method for preparing zinc oxide crystal whisker by using recyclable solvent in low-temperature hydrothermal way |
| 02/01/2012 | CN102148332B Preparation method of semiconductor nano-wire-based organic/inorganic composite solar cell |
| 02/01/2012 | CN101967680B 一种在氧化镁衬底上制备单斜晶型氧化镓单晶薄膜的方法 A magnesium substrate prepared monoclinic gallium oxide single crystal thin film method |
| 02/01/2012 | CN101899708B 一种四角状氧化锌/铁氧体薄膜材料及其制备方法 A quadrangular shaped zinc oxide / ferrite film material and preparation method |
| 02/01/2012 | CN101837978B 由硅矿产出单晶硅或多晶硅连续纯化反应处理装置及方法 Mineral out from a silicon single-crystal silicon or polycrystalline silicon continuous processing apparatus and method for purifying the reaction |
| 02/01/2012 | CN101665245B 一种用于单晶生长的硒化锌多晶材料的制备方法 A method of preparing a single crystal grown ZnSe polycrystalline materials used |
| 02/01/2012 | CN101580964B 一种用于生长高质量碳化硅晶体的籽晶托 A seed tray for the growth of high-quality silicon carbide crystals |
| 02/01/2012 | CN101571351B 坩埚保持部件及其制造方法 The crucible holding member and a method of manufacturing |
| 02/01/2012 | CN101440519B 多晶硅还原炉用硅芯电极 Polysilicon reduction furnace electrode with silicon core |
| 02/01/2012 | CN101410557B 半导体衬底、电子器件、光学器件及其制造方法 A semiconductor substrate, an electronic device, optical device and its manufacturing method |
| 02/01/2012 | CN101405437B 应用混合芯构件制备高纯硅棒的装置和方法 Hybrid core member preparation of high purity silicon rod apparatus and method |
| 02/01/2012 | CN101319373B 有序排列的锰氧化物的制备方法 Ordered the preparation of manganese oxide |
| 02/01/2012 | CN101311357B 一种氧化铟单晶外延薄膜的制备方法 A method for preparing a single crystal epitaxial thin film of indium oxide |
| 01/31/2012 | US8107507 Group III nitride semiconductor element and epitaxial wafer |
| 01/31/2012 | US8105921 Gallium nitride materials and methods |
| 01/31/2012 | US8105553 Apparatus for operating microfluidic device comprising platen having face with fluid ports therein, fluid ports spatially corresponding to inlets on surface of microfluidic device, platform for holding microfluidic device relative to platen, actuator for urging platen against device to change pressure |
| 01/31/2012 | US8105434 Si ribbon, SiO2 ribbon and ultra pure ribbons of other substances |
| 01/31/2012 | US8104464 Brazed diamond tools and methods for making the same |
| 01/26/2012 | WO2012012457A2 Polycrystalline silicon production |
| 01/26/2012 | WO2012011523A1 Polycrystalline silicon ingot manufacturing apparatus, polycrystalline silicon ingot manufacturing method, and polycrystalline silicon ingot |
| 01/26/2012 | WO2012011373A1 Fluorite production method |
| 01/26/2012 | WO2012011372A1 Fluorite |
| 01/26/2012 | WO2012009945A1 Barium fluoroborate, nonlinear optical crystal of barium fluoroborate, the production methods and uses thereof |
| 01/26/2012 | WO2012009900A1 Heat field structure of single crystal furnace for removing the deposition of volatile components on the exterior of heat shield |
| 01/26/2012 | US20120021591 Method of Manufacturing Nitride Substrate for Semiconductors |
| 01/25/2012 | EP2410580A1 Group iii nitride semiconductor device, epitaxial substrate, and method for manufacturing group iii nitride semiconductor device |
| 01/25/2012 | EP2410082A1 Apparatus for manufacturing aluminum nitride single crystal, method for manufacturing aluminum nitride single crystal, and aluminum nitride single crystal |
| 01/25/2012 | EP2410081A1 Silica glass crucible and method for manufacturing same |
| 01/25/2012 | EP2409342A1 Pyroelectric material - radiation sensor - method of making a radiation sensor - use of lithium tantalate and lithium niobate |
| 01/25/2012 | EP2408952A1 Mocvd reactor having a ceiling panel coupled locally differently to a heat dissipation member |
| 01/25/2012 | CN202126151U Polycrystalline material baking oven |
| 01/25/2012 | CN102333909A Methods and pulling assemblies for pulling a multicrystalline silicon ingot from a silicon melt |
| 01/25/2012 | CN102333726A Method for the production of solar grade silicon |
| 01/25/2012 | CN102332510A Method for growing high-antistatic LED (light-emitting diode) by adopting metal organic compound vapor phase epitaxy technology |
| 01/25/2012 | CN102332497A Manufacturing method of silicon epitaxial wafer for MMW (millimeter wave) avalanche diode |
| 01/25/2012 | CN102330155A Monocrystalline silicon wafer etching auxiliary, as well as preparation and using method thereof |
| 01/25/2012 | CN102330153A L-tartaric acid ceric sulfate ferroelectric functional material and preparation method thereof |
| 01/25/2012 | CN102330152A Continuous technological process for producing calcium sulfate whiskers on a large scale |
| 01/25/2012 | CN102330151A Iii nitride crystal substrate, and light-emitting device and method of its manufacture |
| 01/25/2012 | CN102330150A Transition metal salt doped ZnO nano-crystalline prepared by solid phase thermal decomposition method and preparation method of nano-crystalline |
| 01/25/2012 | CN102330149A Preparation method of dendritic gold nano single crystal |
| 01/25/2012 | CN102330148A Polysilicon ingot casting method with low defect and high output and thermal field structure thereof |
| 01/25/2012 | CN102330147A Novel epitaxial device for producing silicon chips and system thereof |
| 01/25/2012 | CN102330144A Preparation method and equipment of finished product large area seed crystal and rectangle large area seed crystal |
| 01/25/2012 | CN102330143A Manufacturing process of monocrystalline silicon ingot and thermal field structure of ingot furnace |
| 01/25/2012 | CN102330058A Method for preparing multi-grade antimonytelluride nano wire harness array by adopting physical vapour deposition |
| 01/25/2012 | CN102328095A Preparation method of metal silver nanowires with adjustable length and diameter |
| 01/25/2012 | CN101935866B Method for preparing flaky calcite calcium carbonate crystal |
| 01/25/2012 | CN101717999B Method for preparing calcium sulfate whisker by crystal seed alcohol heating method |
| 01/25/2012 | CN101665982B Growth method of scorched yttrium silicate scintillation single crystal by means of floating zone |
| 01/25/2012 | CN101619488B Preparation method of single-crystal tungsten oxide with high specific surface area |
| 01/25/2012 | CN101555627B Laser peeling method of gallium nitride-based epitaxial film |
| 01/25/2012 | CN101550598B Tin-doped lithium niobate crystal |
| 01/25/2012 | CN101550592B Method for preparing iron silicide nano wires |
| 01/25/2012 | CN101473074B Method of manufacturing a silicon carbide single crystal |
| 01/25/2012 | CN101469453B Alloy nanotube and manufacturing method thereof |
| 01/25/2012 | CN101319358B 单晶金刚石 Single crystal diamond |
| 01/24/2012 | US8101150 Control of carbon nanotube diameter using CVD or PECVD growth |
| 01/19/2012 | WO2012008545A1 Method for producing aluminum nitride crystals |
| 01/19/2012 | WO2012008208A1 Process for producing single-crystal sapphire, and single-crystal sapphire substrate |
| 01/19/2012 | WO2011116273A3 System and method for polycrystalline silicon deposition |
| 01/19/2012 | US20120015799 Method for producing sapphire single crystal, and sapphire single crystal obtained by the method |
| 01/18/2012 | EP2406414A1 Prevention of crack propagation in brittle materials |
| 01/18/2012 | EP2406413A1 Methods and apparati for making thin semiconductor bodies from molten material |
| 01/18/2012 | EP2406411A1 Mocvd reactor having cylindrical gas inlet element |
| 01/18/2012 | CN202121520U Heating power supply device for high precision power controlling growth of sapphire |
| 01/18/2012 | CN202116693U Crystal growing furnace and furnace cover thereof |
| 01/18/2012 | CN202116692U Rotary lifting mechanism of composite cylindrical cam of thermal switch of polysilicon ingot furnace |
| 01/18/2012 | CN202116689U Quartz crucible with composite layer |
| 01/18/2012 | CN202116688U Interlayer quartz crucible |
| 01/18/2012 | CN202116686U Soot exhausting pipeline of single crystal furnace |
| 01/18/2012 | CN102326228A III-nitride semiconductor growth substrate, III-nitride semiconductor epitaxial substrate, III-nitride semiconductor element, III-nitride semiconductor freestanding substrate, and method for fabricating these |
| 01/18/2012 | CN102325929A Production method of n-type sic single crystal, n-type sic single crystal obtained thereby and application of same |
| 01/18/2012 | CN102325928A Silica glass crucible |
| 01/18/2012 | CN102325927A Silica glass crucible |
| 01/18/2012 | CN102325921A Mocvd reactor having cylindrical gas inlet element |
| 01/18/2012 | CN102321919A Method for preparing monocrystal cuboid carbon nitride film |
| 01/18/2012 | CN102321918A Double-doped lithium niobate crystal and preparation method thereof |
| 01/18/2012 | CN102321917A Preparation method for Si-doped alpha-Fe2O3 super-lattice nanostructure |
| 01/18/2012 | CN102321916A Polysilicon production method and apparatus thereof |
| 01/18/2012 | CN102321915A Preparation method of Mn-doped AlN monocrystalline nano-rod |
| 01/18/2012 | CN102321914A Water cooled electrode of kyropoulos sapphire crystal growing furnace |
| 01/18/2012 | CN102321911A System and method for controlling zone melting furnace for producing silicon single crystal by using abnormity polycrystalline material |